JP2021108345A - 増倍型イメージセンサ - Google Patents
増倍型イメージセンサ Download PDFInfo
- Publication number
- JP2021108345A JP2021108345A JP2019239493A JP2019239493A JP2021108345A JP 2021108345 A JP2021108345 A JP 2021108345A JP 2019239493 A JP2019239493 A JP 2019239493A JP 2019239493 A JP2019239493 A JP 2019239493A JP 2021108345 A JP2021108345 A JP 2021108345A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- region
- type
- image sensor
- photomultiplier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 217
- 230000015556 catabolic process Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
[第1実施形態]
[第2実施形態]
[第3実施形態]
[変形例]
Claims (7)
- 第1表面、及び前記第1表面とは反対側の第2表面を有し、前記第1表面に沿うように配置された複数の画素を含む半導体層と、
前記第2表面に設けられた配線層と、を備え、
前記複数の画素のそれぞれは、
第1導電型の第1半導体領域と、
前記第1半導体領域の少なくとも一部分に対して前記第2表面側に形成され、前記複数の画素のそれぞれごとに分割された第2導電型の第2半導体領域と、
前記第1半導体領域から分離されるように前記第2半導体領域内に形成され、画素回路の一部分を構成する第1導電型のウェル領域と、を有し、
前記第1半導体領域の少なくとも一部分、及び前記第2半導体領域の少なくとも一部分は、アバランシェ増倍領域を形成している、増倍型イメージセンサ。 - 前記第2半導体領域は、前記第1半導体領域における前記一部分以外の部分によって、前記複数の画素のそれぞれごとに分割されている、請求項1に記載の増倍型イメージセンサ。
- 前記第2半導体領域は、前記第2表面側に開口するように前記半導体層に形成されたトレンチによって、前記複数の画素のそれぞれごとに分割されている、請求項1に記載の増倍型イメージセンサ。
- 前記ウェル領域は、前記トレンチから離れるように前記第2半導体領域内に形成されている、請求項3に記載の増倍型イメージセンサ。
- 前記ウェル領域は、前記トレンチに接するように前記第2半導体領域内に形成されている、請求項3に記載の増倍型イメージセンサ。
- 前記第2半導体領域は、前記第1表面に垂直な方向から見た場合における前記第2半導体領域の中央部において、前記配線層と電気的に接続されている、請求項1〜5のいずれか一項に記載の増倍型イメージセンサ。
- 前記複数の画素のそれぞれは、前記ウェル領域として、前記第2半導体領域内において互いに分割された複数のウェル領域を有する、請求項1〜6のいずれか一項に記載の増倍型イメージセンサ。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019239493A JP7471817B2 (ja) | 2019-12-27 | 2019-12-27 | 増倍型イメージセンサ |
US17/787,981 US20230022384A1 (en) | 2019-12-27 | 2020-11-11 | Multiplying image sensor |
PCT/JP2020/042061 WO2021131372A1 (ja) | 2019-12-27 | 2020-11-11 | 増倍型イメージセンサ |
DE112020006386.0T DE112020006386T5 (de) | 2019-12-27 | 2020-11-11 | Multiplikationsbildsensor |
CN202080089971.1A CN114846607A (zh) | 2019-12-27 | 2020-11-11 | 倍增型图像传感器 |
KR1020227025228A KR20220119672A (ko) | 2019-12-27 | 2020-11-11 | 증배형 이미지 센서 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019239493A JP7471817B2 (ja) | 2019-12-27 | 2019-12-27 | 増倍型イメージセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021108345A true JP2021108345A (ja) | 2021-07-29 |
JP7471817B2 JP7471817B2 (ja) | 2024-04-22 |
Family
ID=76575294
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019239493A Active JP7471817B2 (ja) | 2019-12-27 | 2019-12-27 | 増倍型イメージセンサ |
Country Status (6)
Country | Link |
---|---|
US (1) | US20230022384A1 (ja) |
JP (1) | JP7471817B2 (ja) |
KR (1) | KR20220119672A (ja) |
CN (1) | CN114846607A (ja) |
DE (1) | DE112020006386T5 (ja) |
WO (1) | WO2021131372A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023002986A (ja) * | 2021-06-23 | 2023-01-11 | 浜松ホトニクス株式会社 | アバランシェフォトダイオードアレイ |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017043068A1 (ja) * | 2015-09-09 | 2017-03-16 | パナソニックIpマネジメント株式会社 | 固体撮像素子 |
JP2018157156A (ja) * | 2017-03-21 | 2018-10-04 | パナソニックIpマネジメント株式会社 | 固体撮像素子及びその製造方法 |
JP2019169643A (ja) * | 2018-03-23 | 2019-10-03 | パナソニックIpマネジメント株式会社 | 固体撮像素子 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102477964B1 (ko) | 2015-10-12 | 2022-12-16 | 삼성전자주식회사 | 미디어 전송 시스템에서 비디오 비트스트림의 임의 접근 및 재생을 가능하게 하는 기법 |
-
2019
- 2019-12-27 JP JP2019239493A patent/JP7471817B2/ja active Active
-
2020
- 2020-11-11 WO PCT/JP2020/042061 patent/WO2021131372A1/ja active Application Filing
- 2020-11-11 KR KR1020227025228A patent/KR20220119672A/ko unknown
- 2020-11-11 US US17/787,981 patent/US20230022384A1/en active Pending
- 2020-11-11 DE DE112020006386.0T patent/DE112020006386T5/de active Pending
- 2020-11-11 CN CN202080089971.1A patent/CN114846607A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017043068A1 (ja) * | 2015-09-09 | 2017-03-16 | パナソニックIpマネジメント株式会社 | 固体撮像素子 |
JP2018157156A (ja) * | 2017-03-21 | 2018-10-04 | パナソニックIpマネジメント株式会社 | 固体撮像素子及びその製造方法 |
JP2019169643A (ja) * | 2018-03-23 | 2019-10-03 | パナソニックIpマネジメント株式会社 | 固体撮像素子 |
Also Published As
Publication number | Publication date |
---|---|
CN114846607A (zh) | 2022-08-02 |
KR20220119672A (ko) | 2022-08-30 |
JP7471817B2 (ja) | 2024-04-22 |
WO2021131372A1 (ja) | 2021-07-01 |
US20230022384A1 (en) | 2023-01-26 |
DE112020006386T5 (de) | 2022-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4725095B2 (ja) | 裏面入射型固体撮像装置及びその製造方法 | |
JP6406585B2 (ja) | 撮像装置 | |
US11688748B2 (en) | Solid-state imaging apparatus | |
JP6198485B2 (ja) | 光電変換装置、及び撮像システム | |
US9466641B2 (en) | Solid-state imaging device | |
WO2016013227A1 (ja) | 光検出素子及び固体撮像装置 | |
JP5818238B2 (ja) | 半導体装置 | |
JP2019145619A (ja) | 撮像装置およびカメラ | |
KR101373905B1 (ko) | 고체 촬상 장치 | |
JP2018157156A (ja) | 固体撮像素子及びその製造方法 | |
JP6445799B2 (ja) | 光電変換装置 | |
JP6164951B2 (ja) | 光電変換装置の製造方法、光電変換装置、及び撮像システム | |
JP2004273640A (ja) | 固体撮像素子及びその製造方法 | |
WO2021131372A1 (ja) | 増倍型イメージセンサ | |
JP2016528732A (ja) | 表面荷電抑制を有するPiNダイオード構造 | |
JP2012164780A (ja) | 固体撮像素子の製造方法、固体撮像素子、撮像装置 | |
US9437648B2 (en) | Solid-state image pickup device | |
JPWO2015097771A1 (ja) | 撮像装置、撮像システム、および、撮像装置の製造方法 | |
JP6161454B2 (ja) | 光電変換装置、その製造方法及びカメラ | |
JP6913841B1 (ja) | 測距イメージセンサ | |
JP2006032385A (ja) | 固体撮像装置 | |
KR20240031244A (ko) | 수광 장치 및 x선 촬상 장치, 그리고 전자 기기 | |
JP2016051813A (ja) | 半導体装置の製造方法、半導体装置、撮像装置および撮像装置の製造方法 | |
JP2010182790A (ja) | 固体撮像素子、撮像装置、固体撮像素子の製造方法 | |
JPWO2019180898A1 (ja) | 固体撮像素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220713 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230905 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20231106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231227 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240326 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240410 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7471817 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |