JP2021102217A - レーザーリフロー装置、及び、レーザーリフロー方法 - Google Patents
レーザーリフロー装置、及び、レーザーリフロー方法 Download PDFInfo
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- JP2021102217A JP2021102217A JP2019234128A JP2019234128A JP2021102217A JP 2021102217 A JP2021102217 A JP 2021102217A JP 2019234128 A JP2019234128 A JP 2019234128A JP 2019234128 A JP2019234128 A JP 2019234128A JP 2021102217 A JP2021102217 A JP 2021102217A
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- laser
- laser beam
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- power density
- light source
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/005—Soldering by means of radiant energy
- B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K26/034—Observing the temperature of the workpiece
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract
Description
一側面にバンプを配した半導体チップを少なくとも1つ含む被加工物に対して、該半導体チップの他側面からレーザービームを照射して該被加工物の被照射範囲に含まれる該バンプをリフローさせるレーザーリフロー装置であって、
(A)
レーザー光源から出射されたレーザービームについて該被照射範囲内におけるレーザーパワー密度を局所的に設定可能とするレーザーパワー密度設定機能を有する空間光変調手段と、
該レーザー光源から出射されたレーザービームを該被加工物に結像し該被加工物の該被照射範囲に照射する結像機能を有する結像手段と、有する、
又は、
(B)
レーザー光源から出射されたレーザービームについて該被照射範囲内におけるレーザーパワー密度を局所的に設定可能とするレーザーパワー密度設定機能、及び、該レーザービームを該被加工物に結像し該被加工物の該被照射範囲に照射する結像機能と、を有する空間光変調手段を有する、
レーザーリフロー装置とする。
該被加工物上の被照射範囲の位置を変更可能な被照射範囲変更手段を更に備えた、
こととする。
該空間光変調手段は、該被照射範囲のうち該バンプが存在するバンプ領域に照射されるレーザービームのレーザーパワー密度を、該バンプが存在しない非バンプ領域に照射されるレーザービームのレーザーパワー密度よりも高くするよう設定される、
こととする。
該レーザー光源と該空間光変調手段の間に配設され、該レーザー光源から出射されたレーザービームのレーザーパワー密度を該空間光変調手段の入射面において均一化する、均一照射ユニットを更に備えた、
こととする。
該レーザー光源は、複数の光源からなる、
こととする。
被加工物の上面の温度を検出する温度検出器を更に備えた、
こととする。
該レーザービームを透過させる材質からなり、被加工物の上面を抑える押圧部材を更に備えた、
こととする。
上記記載のレーザーリフロー装置を用いたレーザーリフロー方法であって、
該被照射範囲内の各特定領域について照射されるレーザービームのレーザーパワー密度を個別に設定する、レーザーリフロー方法とする。
図2に示す例では、レーザー照射ユニット2は、順に、レーザー光源51と、均一照射ユニット52と、導光ユニット53と、空間光変調手段54と、結像手段55と、拡大レンズ56と、テレセントリックレンズ57、とを有して構成される。
図1に示すように、被加工物40が加工テーブル3にセットされるとともに、加工条件が入力装置200から入力される。ここで、加工条件は、例えば、図5(A)に示すように、「半導体チップ30が存在する各特定領域AのみにレーザービームLAを照射する」という加工条件である。別の例としては、図5(B)に示すように、「半導体チップ30が存在する各特定領域Aに照射されるレーザービームLAのレーザーパワー密度が、半導体チップ30が存在せずレーザービームが直接基板に照射される各特定領域Bに照射されるレーザービームLBのレーザーパワー密度よりも高い」という加工条件である。
図1に示すレーザーリフロー装置1では、加工テーブル3をXY方向に移動させることにより、図6(B)に示す被照射範囲H1を被照射範囲H2に変更することが可能となる。このように、加工テーブル3を被照射範囲変更手段とすることで、被照射範囲H1,被照射範囲H2を順次遷移させることにより、被加工物40の全範囲についてレーザーリフローを実施することができる。
以上のようにしてレーザーリフローを行う際には、図10に示すように、押圧部材60を半導体チップ30の上面に対向させ、半導体チップ30を上側から押さえて反りの発生を防止することが好ましい。このように反りの発生を機械的に抑制することで、バンプ接続不良の発生をより確実に抑えることができる。
レーザービームを照射してレーザーリフローを実施する際には、図1に示すように、温度検出器72により、リアルタイムで温度を計測し、所定の温度でリフローが実施されているかをモニタリングし、必要であれば、レーザービームを追加的に照射することや、レーザービームのレーザーパワー密度を変更することや、所定の温度に到達した際にレーザービームの照射を停止して過度の加熱を防止するなど、フィードバック制御をすることが好ましい。
即ち、図1及び図2に示すように、
一側面にバンプを配した半導体チップ30を少なくとも1つ含む被加工物40に対して、半導体チップ30の他側面からレーザービームを照射して被加工物40の被照射範囲に含まれるバンプをリフローさせるレーザーリフロー装置1であって、
(A)
レーザー光源51から出射されたレーザービームについて被照射範囲内におけるレーザーパワー密度を局所的に設定可能とするレーザーパワー密度設定機能を有する空間光変調手段54と、
レーザー光源51から出射されたレーザービームを被加工物40に結像し被加工物40の被照射範囲に照射する結像機能を有する結像手段55と、有する、
又は、
(B)
レーザー光源51から出射されたレーザービームについて被照射範囲内におけるレーザーパワー密度を局所的に設定可能とするレーザーパワー密度設定機能、及び、レーザービームを被加工物に結像し被加工物40の被照射範囲に照射する結像機能と、を有する空間光変調手段54を有する、
レーザーリフロー装置とするものである。
2 レーザー照射ユニット
3 加工テーブル
4 基台
7 加工ヘッド
20 基板
30 半導体チップ
32 バンプ
40 被加工物
51 レーザー光源
52 均一照射ユニット
53 導光ユニット
54 空間光変調手段
55 結像レンズ
56 拡大レンズ
56 拡大結像レンズ
57 テレセントリックレンズ
60 押圧部材
H 被照射範囲
H1 被照射範囲
H2 被照射範囲
Claims (8)
- 一側面にバンプを配した半導体チップを少なくとも1つ含む被加工物に対して、該半導体チップの他側面からレーザービームを照射して該被加工物の被照射範囲に含まれる該バンプをリフローさせるレーザーリフロー装置であって、
(A)
レーザー光源から出射されたレーザービームについて該被照射範囲内におけるレーザーパワー密度を局所的に設定可能とするレーザーパワー密度設定機能を有する空間光変調手段と、
該レーザー光源から出射されたレーザービームを該被加工物に結像し該被加工物の該被照射範囲に照射する結像機能を有する結像手段と、有する、
又は、
(B)
レーザー光源から出射されたレーザービームについて該被照射範囲内におけるレーザーパワー密度を局所的に設定可能とするレーザーパワー密度設定機能、及び、該レーザービームを該被加工物に結像し該被加工物の該被照射範囲に照射する結像機能と、を有する空間光変調手段を有する、
レーザーリフロー装置。 - 該被加工物上の被照射範囲の位置を変更可能な被照射範囲変更手段を更に備えた、
ことを特徴とする請求項1に記載のレーザーリフロー装置。 - 該空間光変調手段は、該被照射範囲のうち該バンプが存在するバンプ領域に照射されるレーザービームのレーザーパワー密度を、該バンプが存在しない非バンプ領域に照射されるレーザービームのレーザーパワー密度よりも高くするよう設定される、
ことを特徴とする請求項1又は請求項2に記載のレーザーリフロー装置。 - 該レーザー光源と該空間光変調手段の間に配設され、該レーザー光源から出射されたレーザービームのレーザーパワー密度を該空間光変調手段の入射面において均一化する、均一照射ユニットを更に備えた、
ことを特徴とする請求項1乃至請求項3のいずれか一項に記載のレーザーリフロー装置。 - 該レーザー光源は、複数の光源からなる、
ことを特徴とする請求項1乃至請求項4のいずれか一項に記載のレーザーリフロー装置。 - 被加工物の上面の温度を検出する温度検出器を更に備えた、
ことを特徴とする請求項1乃至請求項5のいずれか一項に記載のレーザーリフロー装置。 - 該レーザービームを透過させる材質からなり、被加工物の上面を抑える押圧部材を更に備えた、
ことを特徴とする請求項1乃至請求項6のいずれか一項に記載のレーザーリフロー装置。 - 請求項1乃至請求項7のいずれか一項に記載のレーザーリフロー装置を用いたレーザーリフロー方法であって、
該被照射範囲内の各特定領域について照射されるレーザービームのレーザーパワー密度を個別に設定する、レーザーリフロー方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2019234128A JP7406911B2 (ja) | 2019-12-25 | 2019-12-25 | レーザーリフロー装置、及び、レーザーリフロー方法 |
KR1020200164090A KR20210082350A (ko) | 2019-12-25 | 2020-11-30 | 레이저 리플로 장치, 및, 레이저 리플로 방법 |
CN202011484105.0A CN113020738A (zh) | 2019-12-25 | 2020-12-16 | 激光回流装置和激光回流方法 |
US17/123,318 US11935863B2 (en) | 2019-12-25 | 2020-12-16 | Laser reflow apparatus and laser reflow method |
TW109145905A TW202126136A (zh) | 2019-12-25 | 2020-12-24 | 雷射迴焊裝置、及雷射迴焊方法 |
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Cited By (7)
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KR20230116684A (ko) | 2022-01-28 | 2023-08-04 | 가부시기가이샤 디스코 | 레이저광 조사 장치 |
KR20230123883A (ko) | 2022-02-17 | 2023-08-24 | 가부시기가이샤 디스코 | 레이저 리플로우 방법 |
KR20230131125A (ko) | 2022-03-04 | 2023-09-12 | 가부시기가이샤 디스코 | 레이저 리플로우 방법 |
KR20230131118A (ko) | 2022-03-04 | 2023-09-12 | 가부시기가이샤 디스코 | 레이저 광 조사 장치 |
KR20230142344A (ko) | 2022-04-01 | 2023-10-11 | 가부시기가이샤 디스코 | 검사 방법 |
KR20230145919A (ko) | 2022-04-11 | 2023-10-18 | 가부시기가이샤 디스코 | 레이저 광 조사 장치 |
KR20240052654A (ko) | 2022-10-14 | 2024-04-23 | 가부시기가이샤 디스코 | 레이저 리플로우 장치 |
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US11929334B2 (en) * | 2020-03-17 | 2024-03-12 | STATS ChipPAC Pte. Ltd. | Die-beam alignment for laser-assisted bonding |
CN113814509A (zh) * | 2021-09-16 | 2021-12-21 | 武汉普思立激光科技有限公司 | 一种预置锡的激光锡焊装置 |
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JP2008177240A (ja) | 2007-01-16 | 2008-07-31 | I-Pulse Co Ltd | レーザリフロー装置 |
JP2011216503A (ja) | 2008-08-11 | 2011-10-27 | Yamaha Motor Co Ltd | はんだ付け方法、実装基板の生産方法、およびはんだ付け装置 |
KR102465369B1 (ko) * | 2018-03-05 | 2022-11-10 | 삼성전자주식회사 | 패키지 온 패키지의 제조방법 및 그의 본딩 장치 |
KR102120722B1 (ko) | 2018-09-18 | 2020-06-09 | 레이저쎌 주식회사 | 마이크론급의 두께를 갖는 전자부품에 대한 레이저 리플로우 장치 |
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- 2020-12-16 US US17/123,318 patent/US11935863B2/en active Active
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20230116684A (ko) | 2022-01-28 | 2023-08-04 | 가부시기가이샤 디스코 | 레이저광 조사 장치 |
KR20230123883A (ko) | 2022-02-17 | 2023-08-24 | 가부시기가이샤 디스코 | 레이저 리플로우 방법 |
KR20230131125A (ko) | 2022-03-04 | 2023-09-12 | 가부시기가이샤 디스코 | 레이저 리플로우 방법 |
KR20230131118A (ko) | 2022-03-04 | 2023-09-12 | 가부시기가이샤 디스코 | 레이저 광 조사 장치 |
KR20230142344A (ko) | 2022-04-01 | 2023-10-11 | 가부시기가이샤 디스코 | 검사 방법 |
KR20230145919A (ko) | 2022-04-11 | 2023-10-18 | 가부시기가이샤 디스코 | 레이저 광 조사 장치 |
KR20240052654A (ko) | 2022-10-14 | 2024-04-23 | 가부시기가이샤 디스코 | 레이저 리플로우 장치 |
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KR20210082350A (ko) | 2021-07-05 |
US11935863B2 (en) | 2024-03-19 |
US20210202431A1 (en) | 2021-07-01 |
CN113020738A (zh) | 2021-06-25 |
JP7406911B2 (ja) | 2023-12-28 |
TW202126136A (zh) | 2021-07-01 |
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