TW202126136A - 雷射迴焊裝置、及雷射迴焊方法 - Google Patents

雷射迴焊裝置、及雷射迴焊方法 Download PDF

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Publication number
TW202126136A
TW202126136A TW109145905A TW109145905A TW202126136A TW 202126136 A TW202126136 A TW 202126136A TW 109145905 A TW109145905 A TW 109145905A TW 109145905 A TW109145905 A TW 109145905A TW 202126136 A TW202126136 A TW 202126136A
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Taiwan
Prior art keywords
laser
laser beam
irradiated
power density
workpiece
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TW109145905A
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English (en)
Inventor
小林賢史
金永奭
木村展之
一宮佑希
陳之文
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日商迪思科股份有限公司
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Publication of TW202126136A publication Critical patent/TW202126136A/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
    • B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/034—Observing the temperature of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/035—Aligning the laser beam
    • B23K26/037—Aligning the laser beam by pressing on the workpiece, e.g. pressing roller foot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0665—Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/08—Auxiliary devices therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0944—Diffractive optical elements, e.g. gratings, holograms
    • G—PHYSICS
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    • H05K3/00—Apparatus or processes for manufacturing printed circuits
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Abstract

[課題] 提案在進行半導體晶片的凸塊的迴焊的雷射迴焊製程中，可一邊抑制基板的翹曲，一邊減低凸塊連接不良的新穎技術。 [解決手段] 本發明之雷射迴焊裝置係對包含在一側面配設有凸塊的半導體晶片的被加工物，由半導體晶片側照射雷射光束而使被加工物的被照射範圍所包含的凸塊進行迴焊的雷射迴焊裝置，其係包含：具有針對由雷射光源被出射的雷射光束，可局部設定被照射範圍內的雷射功率密度的雷射功率密度設定功能的空間光調變手段、及具有將由雷射光源被出射的雷射光束成像在被加工物且照射在被加工物的該被照射範圍的成像功能的成像手段。

Description

雷射迴焊裝置、及雷射迴焊方法
本發明係關於對透過凸塊在基板連接有半導體晶片的構成的被加工物，由半導體晶片側照射雷射光束而使凸塊進行迴焊的雷射迴焊裝置、及雷射迴焊方法。
自以往以來已知將具有凸塊的半導體晶片，透過該凸塊而載置於基板上之後，將基板與晶片的全體加熱，藉此將凸塊熔化而連接於基板上的電極的覆晶構裝。
在覆晶構裝中，已知將基板全體加熱而接合的質量迴焊製程(Mass Reflow)。在該質量迴焊中，已知基於基板與配置複數在基板上的晶片的熱膨脹係數的不同，在加熱中，基板大幅翹曲，伴隨此，有發生晶片移動、斷線或短路等不良的可能性。
此外，亦已知藉由在各晶片實施加熱/加壓來進行接合的TCB製程(Thermo-Compression Bonding：熱壓接)。在該TCB製程中，已知在接合器頭的冷卻耗費時間、或生產性差。
以相對於以上所示之製程具優位性的製程而言，已知例如專利文獻1所揭示之雷射迴焊製程。在該雷射迴焊製程中，係在基板的構裝面的預定範圍中，由晶片的上側照射雷射光束而將凸塊熔化，且將晶片連接在基板上的電極者。
接著，在如上所示之雷射迴焊製程中，係具有藉由對複數晶片照射雷射光束，獲得比TCB製程為更高的生產性，且如質量迴焊製程般在基板不會發生較大翹曲的優點。 [先前技術文獻] [專利文獻]
[專利文獻1] 日本特開2008-177240號
(發明所欲解決之問題)
如上所述，雷射迴焊製程雖然有優點，但是因照射雷射光束而基板亦被加熱，因此依然殘留有基板翹曲問題，有更進一步改善的餘地。
在此，亦考慮藉由單純地抑制雷射的輸出，來抑制基板的溫度上昇，惟此時擔心凸塊未被充分熔解而發生連接不良。
此外，除了將半導體晶片構裝在基板的覆晶構裝之外，亦已知將分割成半導體晶片之前的晶圓進行積層，以晶圓的狀態進行凸塊接合的晶圓對晶圓(wafer on wafer)，在該應用中亦有晶圓翹曲的問題之虞。
因此，本發明之目的在提供可一邊抑制因熱所致之被加工物的翹曲，一邊減低凸塊連接不良的雷射迴焊裝置、及雷射迴焊方法。 (解決問題之技術手段)
藉由本發明之一態樣，提供一種雷射迴焊裝置，其係對包含在一側面配設有凸塊的半導體晶片的被加工物，由該半導體晶片的另一側面照射雷射光束而使該被加工物的被照射範圍所包含的該凸塊進行迴焊的雷射迴焊裝置，(A)包含：具有針對由雷射光源被出射的雷射光束，可局部設定該被照射範圍內的雷射功率密度的雷射功率密度設定功能的空間光調變手段、及具有將由該雷射光源被出射的雷射光束成像在該被加工物且照射在該被加工物的該被照射範圍的成像功能的成像手段、或(B)包含：具有針對由雷射光源被出射的雷射光束，可局部設定該被照射範圍內的雷射功率密度的雷射功率密度設定功能、及將該雷射光束成像在該被加工物且照射在該被加工物的該被照射範圍的成像功能的空間光調變手段。
較佳為另外包含：可變更該被加工物上的被照射範圍的位置的被照射範圍變更手段。
此外，較佳為該空間光調變手段係被設定為使被照射在該被照射範圍之中存在該凸塊的凸塊區域的雷射光束的雷射功率密度，比被照射在不存在該凸塊的非凸塊區域的雷射光束的雷射功率密度為更高。
此外，較佳為另外包含：均一照射單元，其係被配設在該雷射光源與該空間光調變手段之間，將由該雷射光源被出射的雷射光束的雷射功率密度在該空間光調變手段的入射面均一化。
此外，較佳為該雷射光源係由複數光源所成。
此外，較佳為另外包含：檢測被加工物的上表面的溫度的溫度檢測器。
此外，較佳為另外包含：由使該雷射光束透過的材質所成，且按住被加工物的上表面的按壓構件。
藉由本發明之其他一態樣，提供一種雷射迴焊方法，其係使用雷射迴焊裝置的雷射迴焊方法，個別設定針對該被照射範圍內的各特定區域所被照射的雷射光束的雷射功率密度。 (發明之效果)
藉由本發明之一態樣及其他一態樣，因雷射迴焊裝置具備空間光調變元件，可將雷射功率密度在被照射範圍內局部設定，例如，僅對凸塊區域照射雷射功率密度高的雷射光束，藉此不會有將不必要的部位無用地加熱的情形，可一邊抑制被加工物的翹曲，一邊將凸塊確實地熔化，可抑制凸塊連接不良的發生。
以下參照所附圖示，詳加說明本發明之實施形態之雷射迴焊裝置。如圖1所示，雷射迴焊裝置1係構成為具有：照射雷射光束的雷射照射單元2、及保持被加工物40的加工平台3，使加工平台3對雷射照射單元2相對移動，藉此對被加工物40施行雷射加工。
被加工物40係例如在將半導體晶片30的表面朝下的狀態下配列在矩形的基板20上者，將配置在半導體晶片30的表側的凸塊以雷射光束進行迴焊，藉此預定半導體晶片30對基板20予以覆晶構裝者。基板20係例如PCB基板(Printed Circuit Board，印刷電路板)、或被分割為晶片之前的元件晶圓等。
其中，以被加工物40而言，考慮如圖5(A)所示，透過凸塊32而在基板20配列有半導體晶片30者、或如圖5(C)所示，積層半導體晶片30A、30B、30C，且在各半導體晶片30間存在凸塊32者等。此外，在積層複數個元件晶圓而進行凸塊接合的晶圓對晶圓(wafer on wafer)的應用中亦可適用本發明，此時係以積層複數晶圓者成為被加工物。
如圖1所示，雷射迴焊裝置1係具備：基台4、及由基台4的後端部立設在上方的縱壁部5。在縱壁部5的前表面5a係設置朝前方突出的臂部6，且在臂部6的前端側係設有雷射照射單元2的加工頭7。加工頭7係詳如後述用以將由雷射光源被照射的雷射光束聚光，且對被保持在加工平台3上的被加工物40照射雷射光束者。
在本實施例中，加工平台3係構成為可藉由未圖示的旋轉機構以θ方向(繞著Z軸)旋轉，惟亦可為不旋轉的構成。其中，若被加工物40對加工頭7斜向載置時，以具備旋轉機構為有效。
在基台4的上表面係設有：朝Y軸方向延伸存在的一對導軌8、可對一對導軌8滑動地予以支持的Y軸平台9、馬達17、及藉由馬達17予以旋轉驅動的滾珠螺桿15。Y軸平台9係透過螺帽構件而連結在滾珠螺桿15，藉由馬達17的驅動，Y軸平台9朝Y軸方向移動。
在Y軸平台9的上表面係設有：朝X軸方向延伸存在的一對導軌10、可對一對導軌10滑動地予以支持的X軸平台11、馬達18、及藉由馬達18予以旋轉驅動的滾珠螺桿16。X軸平台11係透過螺帽構件而與滾珠螺桿16相連結，藉由馬達18的驅動，X軸平台11朝X軸方向移動。
在臂部6中，在加工頭7的側方係配置有：使用在用以將被加工物40的位置與加工頭7的位置進行對準的攝像攝影機71；及用以檢測被加工物40的溫度的溫度檢測器72。例如，攝像攝影機71係可由CCD攝影機所構成，溫度檢測器72係可由紅外線攝影機所構成。
在臂部6中，在加工頭7的下方係以與半導體晶片30的上表面相對向的方式設有按壓構件60。按壓構件60係當因熱變形而在基板20欲發生翹曲時，用以由上側按住半導體晶片30而防止翹曲的發生或偏移者。按壓構件60係由使被照射在被加工物40的雷射光束透過的材質所構成，在本實施例中，係構成為可藉由以平板構件所構成而被設在臂部6的側面的昇降機構62以上下方向移動。
在半導體晶片30的上表面，若雷射光束的一部分作反射，且該所反射的雷射光束到達按壓構件60的上表面時，其一部分在按壓構件60的上表面再次反射而朝向半導體晶片30行進，且在半導體晶片30被吸收。如上所示，按壓構件60亦以使雷射光束發生多重反射，且使加工效率提升為目的而設。
在雷射迴焊裝置1係設有用以控制雷射照射單元2的動作、加工平台3的XY移動、攝像攝影機71或溫度檢測器72的控制等藉由雷射迴焊裝置1所實現的各功能的控制裝置100。
此外，在雷射迴焊裝置1係設有用以對控制裝置100輸入被加工物40的加工條件或屬性資訊等的輸入裝置200。輸入裝置200係可由觸控面板等所構成。
接著，說明雷射照射單元的光學系的一實施形態。 在圖2所示之例中，雷射照射單元2係依序具有：雷射光源51、均一照射單元52、導光單元53、空間光調變手段54、成像手段55、放大成像透鏡56、及遠心透鏡57。
雷射光源51係可由例如光纖雷射、具有單一雷射二極體(LD)的單一光源、或配置複數雷射二極體(LD)而成的多光源所構成。
由雷射光源51被出射的雷射光束係對被加工物(半導體晶片)具吸收性的波長的連續波(CW)的雷射光束。若半導體晶片30(圖1)為矽，係使用例如400nm~1100nm的波長的雷射光束，惟亦可採用更為短波長者。若為短波長，在半導體晶片表面的反射會增加，若為長波長，雖抑制在半導體晶片表面的反射，但是對矽的透過性會增加。因此，考慮尤佳為採用900nm~1000nm的波長，藉此，可抑制在半導體晶片表面的反射，並且可確保在半導體晶片的吸收。
均一照射單元52係用以藉由從均一照射單元52被出射的雷射光束，對空間光調變手段54形成均一照射面者。在該均一照射面中，雷射光束的雷射功率密度成為均一。
若雷射光源51為多光源，以特別設有該均一照射單元52為佳。均一照射單元52係在單一光源的情形下、或在呈高斯分布的光源的情形下，係以設為用以形成為完全的高帽(top hat)分布為佳，此外，在呈高帽分布的光源的情形下，亦以設為用以形成為完全的高帽分布為佳。
均一照射單元52係可利用例如：如圖3(A)所示，藉由準直透鏡R1與非球面透鏡R2的組合形成均一照射面K者；如圖3(B)所示，藉由準直透鏡R3、DOE (Diffractive Optical Element：繞射光學元件)R4、聚光透鏡R5的組合形成均一照射面K者；如圖3(C)所示，藉由柱狀透鏡R6(柱狀透鏡係由玻璃所成的筒狀構件)與導光單元R7(中繼透鏡或光纖)的組合形成均一照射面K者；如圖3 (D)所示，藉由準直透鏡R8與第一/第二透鏡陣列R9/R10 (將複數柱狀透鏡束捆形成為陣列狀者、或將透鏡進行面加工為陣列狀者)與聚光透鏡R11的組合形成均一照射面K者。其中，在圖3(C)的構成中，亦可形成為使用光導管(以鏡包圍的中空的筒狀構件，亦稱為柱型光學均勻器(homogenizer rod))，來取代柱狀透鏡R6。
此外，在圖3(C)所示之柱狀透鏡R6(或光導管)的構成中，除了使用如圖3(C)所示，相較於入射側，出射側的直徑為較小者之外，亦可形成為使用形成為同徑者、或入射側比出射側的直徑為較小者。
圖2所示之導光單元53係用以將藉由均一照射單元所形成的均一照射面的光(或來自光源的直接的光)轉印至空間光調變手段54的單元，可藉由例如光纖或中繼透鏡(耦合透鏡)所構成。其中，若利用耦合透鏡，與光纖相比較，可將導光單元53與空間光調變手段54之間的距離設置較寬，因此裝置設計的自由度提高。
圖2所示之空間光調變手段54係由可控制所被出射的雷射光束的強度(雷射功率密度)的空間密度分布的空間光調變元件所構成，且被稱為SLM(Spatial Light Modulator)。空間光調變手段54係可由例如選自周知的反射型液晶LCOS(Liquid-Crystal on Silicon)、透過型液晶LCP(Liquid Crystal Panel)、Deformable Mirror、DMD (Digital Micro-mirror Device)等周知的SLM元件者所構成。
此外，較佳為以空間光調變手段54的雷射被照射面(入射面)、與被加工物40的雷射被照射面成為非共軛的方式，利用相位調變型的空間光調變手段54。藉此，可提高由光源被出射的雷射光束的利用效率。
其中，亦可利用空間光調變手段54的雷射被照射面(入射面)、與被加工物的雷射被照射面成為共軛的振幅調變型的空間光調變手段54。例如，可在上述之SLM元件之中採用振幅調變型者、或遮罩等作為空間光調變手段54。但是，在振幅調變型的SLM元件、或遮罩、DMD中，係會發生未被照射至被加工物40的光的損失。
圖2所示之成像手段55係可由以單一透鏡、或耦合透鏡所成的成像透鏡所構成。在圖2之例中，係將兩凸透鏡與兩凹透鏡依序配置而構成。
其中，若採用相位調變型的空間光調變手段54(例如，反射型LCOS或Deformable Mirror等)，可使構成空間光調變手段54的空間光調變元件具有成像手段55(成像透鏡)的功能，此時亦可省略成像手段55(成像透鏡)。
圖2所示之放大成像透鏡56係將在成像透鏡所成像的像(共軛像)放大而成像在被加工物40的雷射被照射面。放大成像透鏡56係可省略。
圖2所示之遠心透鏡57係對被加工物40的雷射被照射面，使雷射光束垂直入射，亦即為用以與光軸呈平行地入射者。例如，如圖4所示，藉由遠心透鏡57，將雷射光束LB形成為平行入射光，且透過鄰接的半導體晶片30的狹窄間隙，避開半導體晶片30而照射在基板20時，以利用遠心透鏡57尤其有效。其中，亦可以遠心透鏡來構成圖2所示之成像手段55，此外，亦可省略遠心透鏡57來構成光學系。
此外，若使用遠心透鏡57來構成光學系，亦有關於在雷射被照射面的對焦，不需要高精度的Z方向的定位的優點。此外，如圖4所示，雷射光束LB相對被加工物40的雷射被照射面呈垂直地入射，因此即使在相鄰的半導體晶片30的間隔為較窄的情形下、或半導體晶片30為較厚的情形下，亦可防止雷射光束LB被照射在半導體晶片30的表面。
接著，說明實施雷射迴焊之例。 如圖1所示，被加工物40被安置在加工平台3，並且由輸入裝置200輸入加工條件。在此，加工條件係例如，如圖5(A)所示，所謂「僅對半導體晶片30所存在的各特定區域A照射雷射光束LA」的加工條件。以其他例而言，如圖5(B)所示，為所謂「被照射在半導體晶片30所存在的各特定區域A的雷射光束LA的雷射功率密度，比被照射在不存在半導體晶片30而雷射光束直接照射在基板的各特定區域B的雷射光束LB的雷射功率密度為更高」的加工條件。
如以上所示之針對被照射範圍內的特定區域，局部照射雷射光束、或設定雷射功率密度的分布，係可藉由利用空間光調變手段54來進行。其中，雷射功率密度係指平均單位面積的雷射功率，其單位為W/cm2 ，在本實施形態中的雷射迴焊中，係假設10W/cm2 ~300W/cm2 。
在此，雷射功率密度係依被加工物40的材質、或雷射光束所透過的半導體晶片30或被加工物40的厚度予以設定，例如10W/cm2 ~300W/cm2 ，為了縮短照射時間(迴焊所需時間)，以形成為80W/cm2 ~300W/cm2 為更佳。依半導體晶片或被加工物的厚度，亦可利用比300W/cm2 為更高的密度的雷射光束，惟由於使元件損傷的風險高，因此考慮該情形來作適當設定。
控制裝置100係執行以攝像攝影機71對加工表面攝像，且由被照射範圍之中確定特定區域的步驟。接著，針對各特定區域，個別設定雷射功率密度。若為圖5(B)之例，由被照射範圍之中確定特定區域A、B，且針對特定區域A，將雷射功率密度設定為較高，且針對特定區域B，將雷射功率密度設定為較低。
此外，亦可在加工前進行特定區域的確定與雷射功率密度的設定。例如，在加工前根據被加工物40的各種尺寸確定特定區域，分別設定各特定區域的雷射功率密度，且將特定區域與各雷射功率密度作為加工條件而登錄在加工裝置。同時將被加工物40的特徵點的攝像畫像登錄作為標的，並且將標的與各特定區域的位置關係登錄在裝置。接著，藉此，在迴焊時，將被加工物40以攝像攝影機71進行攝像來檢測特徵點，檢測特定區域，而以先登錄的各雷射功率密度照射雷射光束。
接著，根據攝像畫像，使加工平台3移動而將加工頭7的位置與被加工物40的位置適當對位。
對位完成後，控制裝置100係對應上述加工條件來照射雷射光束，且將凸塊32熔化來進行半導體晶片30與基板20的電性連接。
其中，如圖5(C)所示，即使在積層半導體晶片30A、30B、30C，且在各半導體晶片30A、30B、30C間存在凸塊32的構成中，亦可適當實施本案的構成。
以雷射迴焊的加工條件而言，除了圖5(A)、圖5(B)所示者之外，亦可設定例如：如圖6(A)所示形成為僅一個半導體晶片30的區域A1被照射雷射光束的特定區域、如圖6(B)所示形成為僅複數半導體晶片30的區域A1~A6被照射雷射光束的特定區域、如圖6(C)所示形成為複數半導體晶片30中僅配置凸塊32的凸塊區域M1~M6被照射雷射光束的特定區域、如圖6(D)所示形成為針對複數半導體晶片30中配置凸塊32的凸塊區域M1~M6，提高雷射功率密度，且降低未配置凸塊的非凸塊區域N1~N6的雷射功率密度等條件。
此外，以加工條件而言，亦可設定如圖7(A)所示形成為雷射光束僅被照射在基板20不存在半導體晶片30而露出的露出區域R1(基板表面)的特定區域、如圖7(B)所示針對露出區域R1提高雷射功率密度、且降低半導體晶片30的區域A1~A6的雷射功率密度、或相反地，針對露出區域R1降低雷射功率密度，且提高半導體晶片30的區域A1~A6的雷射功率密度等條件。
此外，如圖5(C)所示，若積層複數半導體晶片30A、30B、30C，而欲抑制半導體晶片的損傷時等，亦有硬將照射在半導體晶片的雷射光束的雷射功率密度設定為較低為有效的情形。此外，亦可藉由硬將照射在基板20的雷射光束的雷射功率密度提高、或僅對基板20照射雷射光束，利用基板20側的溫度上昇而容易將凸塊熔化。
例如，在圖5(C)所示之構成中，若均等照射雷射光束，最下層的半導體晶片30C的凸塊熔化之前，最上層的半導體晶片30A被過於加熱，有半導體晶片30A的元件損傷的可能性。因此，降低存在晶片的區域的雷射功率密度，並且對基板20A(Si中介層)照射高雷射功率密度的雷射光束而將基板20A積極地加熱，藉由來自基板20A的熱傳導，使最下層的半導體晶片30C熔融。如上所示，利用基板20A作為熱源，藉此使各半導體晶片30A、30B、30C的凸塊均一熔融，可防止元件損傷。
此外，若被加工物40大而被照射範圍大，亦可反覆局部的雷射光束照射，階段性地照射雷射光束。例如，在圖6(B)中，將包含特定區域A1~A6的範圍設定為被照射範圍H1，針對被照射範圍H1所包含的特定區域A1~A6照射雷射光束。接著，亦可將包含剩餘的特定區域A7~A12的範圍設定為被照射範圍H2，針對被照射範圍H2所包含的特定區域A7~A12照射雷射光束。
接著，說明階段式地進行雷射光束的照射時所使用的被照射範圍變更手段。在圖1所示之雷射迴焊裝置1中，係使加工平台3以XY方向移動，藉此可將圖6(B)所示之被照射範圍H1變更為被照射範圍H2。如上所示，藉由使加工平台3以XY方向移動，可使被照射範圍H1、被照射範圍H2依序遷移，且針對被加工物40的全範圍實施雷射迴焊。此時，被照射範圍變更手段係如圖1所示，以使加工平台3移動的構成來實現。
被照射範圍變更手段係除了以使加工平台3移動的構成來實現之外，亦可藉由圖8、圖9所示之光學系來實現。圖8所示之光學系係依序配置雷射光源/均一照射單元81、中繼透鏡82、空間光調變元件83(空間光調變手段)、成像透鏡84(成像手段)、中繼透鏡85、第一檢流掃描器86、第二檢流掃描器87、中繼透鏡88而構成。第一檢流掃描器86係具備：第一反射鏡86a、致動器86b，第二檢流掃描器87係具備：第二反射鏡87a、致動器87b。
第一檢流掃描器86的第一反射鏡86a將由雷射光源/均一照射單元81被出射而通過空間光調變元件83的雷射光束以Y方向偏向，且第二檢流掃描器87的第二反射鏡87a將雷射光束以X方向偏向，藉此可使被照射範圍H移動至所希望的位置。
此外，圖9所示之光學系係依序配置雷射光源91、均一照射單元92、中繼透鏡93、空間光調變元件94(空間光調變手段)、成像透鏡95(成像手段)、中繼透鏡96、2軸MEMS反射鏡97(Micro Electro Mechanical Systems)、中繼透鏡98而構成。
2軸MEMS反射鏡97係形成為藉由以X方向伸長的第一旋轉軸以圖9的箭號Rx方向旋轉，藉此將雷射光束以Y方向偏向，並且藉由以Y方向伸長的第二旋轉軸以圖9的箭號Ry方向旋轉，藉此將雷射光束以X方向偏向的構成。藉此，藉由2軸MEMS反射鏡97，將雷射光束以X方向、Y方向偏向，藉此可使被照射範圍H移動至所希望的位置。
接著，說明抑制基板發生翹曲的按壓構件。 進行如以上所示之雷射迴焊時，較佳為如圖10所示，使按壓構件60與半導體晶片30的上表面相對向，由上側按壓半導體晶片30來防止翹曲發生。如上所示機械式抑制翹曲發生，藉此可更確實地抑制凸塊連接不良的發生。
亦可使按壓構件60抵接於半導體晶片30的上表面來抑制翹曲發生，或者，亦可在按壓構件60與半導體晶片30的上表面之間設置些微間隙，且在基板20發生翹曲時，抑制翹曲進展。
按壓構件60係可由例如使400nm~1000nm的波長的雷射光束LA透過的石英玻璃板所構成。此外，如圖1所示，可採用在加工平台3的上方配置按壓構件60，以昇降機構62使其作昇降，藉此可適當調整上下位置的構成。
接著，說明迴焊時的被加工物40的溫度的監視器。 照射雷射光束而實施雷射迴焊時，如圖1所示，藉由溫度檢測器72，即時計測溫度，且監測是否以預定的溫度實施迴焊，若為必要，較佳為進行追加照射雷射光束、變更雷射光束的雷射功率密度、到達預定的溫度時停止雷射光束的照射來防止過度的加熱等反饋控制。
藉此，可更加確實地防止因凸塊熔解不良等所致之電性連接不良的發生。
如以上所示可實現本發明。
如上所示，因雷射迴焊裝置具備空間光調變手段，可將雷射功率密度在被照射範圍內局部設定，例如，僅在凸塊區域照射雷射功率密度高的雷射光束，藉此不會有將不必要的部位無用地加熱的情形，可一邊抑制被加工物的翹曲，一邊將凸塊確實熔化，可抑制凸塊連接不良的發生。
此外，如圖6(B)所示，藉由另外具備可變更被加工物40上的被照射範圍H1、H2的位置的被照射範圍變更手段，不需要在光學系中為較大的成像透鏡，可使關於光學系的裝置構成較為精簡。
其中，在圖1之例中，係以加工平台3構成被照射範圍變更手段，在圖8之例中，係藉由第一檢流掃描器86、第二檢流掃描器87，構成被照射範圍變更手段，在圖9之例中，係可以2軸MEMS反射鏡97構成被照射範圍變更手段。
此外，如圖6(D)所示，空間光調變手段係藉由設定為使被照射在被照射範圍之中存在凸塊的凸塊區域M1~M6的雷射光束的雷射功率密度，比被照射在不存在凸塊的非凸塊區域N1~N6的雷射光束的雷射功率密度為更高，可將凸塊區域重點地加熱，因此不會無用地將基板加熱，而抑制基板翹曲。
尤其如圖5(C)所示，若在積層複數半導體晶片的狀態下進行加熱，若在將基板側的半導體晶片的凸塊迴焊時進行充分加熱，可能使上側的半導體晶片的元件損傷，因此以限定於凸塊區域來照射雷射光束較為有效。其中，如圖7(A)所示，藉由僅將基板加熱、或降低半導體晶片的部位的雷射功率密度等，亦有可防止元件損傷的情形，因此以將各區域中的雷射功率密度的設計適當最適化為佳。
此外，如圖2所示，另外具備：被配設在雷射光源51與空間光調變手段54之間，且將由雷射光源51被出射的雷射光束的雷射功率密度在空間光調變手段54的入射面均一化的均一照射單元52，藉此並非使來自雷射光源的雷射光束的能量分布照原樣反映在被加工物的被照射面，而可使在被照射面的能量分布成為均一，可實現能量不均受到抑制的均一迴焊。
此外，若雷射光源51由複數光源所成，可廉價地構成例如實現高輸出的雷射光源51。
此外，如圖1所示，藉由另外具備檢測被加工物40的上表面的溫度的溫度檢測器72，可監測溫度。
藉此，若為必要，可進行追加照射雷射光束、變更雷射光束的雷射功率密度、到達預定的溫度時停止照射雷射光束而防止過度的加熱等反饋控制，可更確實地防止因凸塊熔解不良等所致之電性連接不良的發生。
此外，如圖10所示，另外具備：由使雷射光束透過的材質所成，且按住被加工物40的上表面的按壓構件60，藉此可機械式抑制基板發生翹曲，且可更加確實地抑制凸塊連接不良的發生。
此外，如圖5至圖7所示，藉由在被照射範圍內確定複數特定區域且個別設定針對各特定區域被照射的雷射光束的雷射功率密度的雷射迴焊方法，例如，僅對凸塊區域照射雷射功率密度高的雷射光束，藉此不會無用地將基板加熱，而可一邊抑制基板翹曲一邊將凸塊確實熔化，可抑制凸塊連接不良的發生。
1:雷射迴焊裝置 2:雷射照射單元 3:加工平台 4:基台 5:縱壁部 5a:前表面 6:臂部 7:加工頭 8:導軌 9:Y軸平台 10:導軌 11:X軸平台 15:滾珠螺桿 16:滾珠螺桿 17:馬達 18:馬達 20,20A:基板 30,30A,30B,30C:半導體晶片 32:凸塊 40:被加工物 51:雷射光源 52:均一照射單元 53:導光單元 54:空間光調變手段 55:成像透鏡 56:放大成像透鏡 57:遠心透鏡 60:按壓構件 62:昇降機構 71:攝像攝影機 72:溫度檢測器 81:雷射光源/均一照射單元 82:中繼透鏡 83:空間光調變元件(空間光調變手段) 84:成像透鏡(成像手段) 85:中繼透鏡 86:第一檢流掃描器 86a:第一反射鏡 86b:致動器 87:第二檢流掃描器 87a:第二反射鏡 87b:致動器 88:中繼透鏡 91:雷射光源 92:均一照射單元 93:中繼透鏡 94:空間光調變元件(空間光調變手段) 95:成像透鏡(成像手段) 96:中繼透鏡 97:2軸MEMS反射鏡 98:中繼透鏡 100:控制裝置 200:輸入裝置 A,A1~A12:特定區域 H:被照射範圍 H1:被照射範圍 H2:被照射範圍 K:均一照射面 LA,LB:雷射光束 M1~M6:凸塊區域 N1~N6:非凸塊區域 R1:準直透鏡 R2:非球面透鏡 R3:準直透鏡 R4:DOE(Diffractive Optical Element:繞射光學元件) R5:聚光透鏡 R6:柱狀透鏡 R7:導光單元 R8:準直透鏡 R9:第一透鏡陣列 R10:第二透鏡陣列 R11:聚光透鏡
[圖1]係示出雷射迴焊裝置的一構成例的圖。 [圖2]係說明光學系的一構成例的圖。 [圖3](A)係藉由準直透鏡與非球面透鏡所得之均一照射單元的圖，(B)係藉由準直透鏡與DOE所得之均一照射單元的圖，(C)係藉由柱狀透鏡與導光單元所得之均一照射單元的圖，(D)係藉由準直透鏡與透鏡陣列與聚光透鏡所得之均一照射單元的圖。 [圖4]係說明在遠心透鏡所形成的平行入射光的圖。 [圖5](A)係示出僅在半導體晶片的區域照射雷射光束之例的圖，(B)係示出設定依區域而異的雷射功率密度之例的圖，(C)係示出針對積層半導體晶片者實施雷射迴焊之例的圖。 [圖6](A)係說明雷射光束被照射在一個半導體晶片的區域之例的圖。(B)係說明雷射光束被照射在複數半導體晶片的區域之例的圖。(C)係說明雷射光束被照射在配置凸塊的區域之例的圖。(D)係示出設定依區域而異的雷射功率密度的樣子的圖。 [圖7](A)係說明僅對基板表面照射雷射光束之例的圖。(B)係示出設定依區域而異的雷射功率密度的樣子的圖。 [圖8]係說明光學系的其他實施例的圖。 [圖9]係說明光學系的其他實施例的圖。 [圖10]係說明因按壓構件所致之基板的翹曲的抑制的圖。
3:加工平台
40:被加工物
51:雷射光源
52:均一照射單元
53:導光單元
54:空間光調變手段
55:成像透鏡
56:放大成像透鏡
57:遠心透鏡

Claims (8)

  1. 一種雷射迴焊裝置，其係對包含在一側面配設有凸塊的半導體晶片的被加工物，由該半導體晶片的另一側面照射雷射光束而使該被加工物的被照射範圍所包含的該凸塊進行迴焊的雷射迴焊裝置， 包含：具有針對由雷射光源被出射的雷射光束，可局部設定該被照射範圍內的雷射功率密度的雷射功率密度設定功能的空間光調變手段、及具有將由該雷射光源被出射的雷射光束成像在該被加工物且照射在該被加工物的該被照射範圍的成像功能的成像手段、 或包含：具有針對由雷射光源被出射的雷射光束，可局部設定該被照射範圍內的雷射功率密度的雷射功率密度設定功能、及將該雷射光束成像在該被加工物且照射在該被加工物的該被照射範圍的成像功能的空間光調變手段。
  2. 如請求項1之雷射迴焊裝置，其中，另外包含：可變更該被加工物上的被照射範圍的位置的被照射範圍變更手段。
  3. 如請求項1或2之雷射迴焊裝置，其中，該空間光調變手段係被設定為使被照射在該被照射範圍之中存在該凸塊的凸塊區域的雷射光束的雷射功率密度，比被照射在不存在該凸塊的非凸塊區域的雷射光束的雷射功率密度為更高。
  4. 如請求項1或2之雷射迴焊裝置，其中，另外包含：均一照射單元，其係被配設在該雷射光源與該空間光調變手段之間，將由該雷射光源被出射的雷射光束的雷射功率密度在該空間光調變手段的入射面均一化。
  5. 如請求項1或2之雷射迴焊裝置，其中，該雷射光源係由複數光源所成。
  6. 如請求項1或2之雷射迴焊裝置，其中，另外包含：檢測被加工物的上表面的溫度的溫度檢測器。
  7. 如請求項1或2之雷射迴焊裝置，其中，另外包含：由使該雷射光束透過的材質所成，且按住被加工物的上表面的按壓構件。
  8. 一種雷射迴焊方法，其係使用如請求項1或2之雷射迴焊裝置的雷射迴焊方法， 個別設定針對該被照射範圍內的各特定區域所被照射的雷射光束的雷射功率密度。
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