JP2021096363A - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP2021096363A JP2021096363A JP2019227527A JP2019227527A JP2021096363A JP 2021096363 A JP2021096363 A JP 2021096363A JP 2019227527 A JP2019227527 A JP 2019227527A JP 2019227527 A JP2019227527 A JP 2019227527A JP 2021096363 A JP2021096363 A JP 2021096363A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 239000010410 layer Substances 0.000 description 131
- 239000010408 film Substances 0.000 description 25
- 230000002093 peripheral effect Effects 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000002243 precursor Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229920000178 Acrylic resin Polymers 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004986 Cholesteric liquid crystals (ChLC) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
1a 一方主面
1b 他方主面
2 第2基板
2a 一方主面
2b 他方主面
3 ゲート信号線
31 ゲート信号線駆動回路
4 ソース信号線
41 ソース信号線駆動回路
5 画素
6 副画素
7 液晶表示部
8 絶縁層
9 第1絶縁層
9a 第1面
10 湾曲部
10a 外周縁
11 第2絶縁層
11a 第2面
111 第3絶縁層
112 第4絶縁層
113 第5絶縁層
12 凹部
12a 底面
12b 内周面
13 カラーフィルタ
14 遮光膜
15 薄膜トランジスタ
151 半導体膜
152 ゲート電極
153 ソース電極
154 ドレイン電極
16,161,162 配向膜
17 スペーサ
71 液晶層
72 共通電極
73 画素電極
74,75 層間絶縁層
80 単位表示部
100 液晶表示装置
Claims (7)
- 第1基板と、
前記第1基板に対向する第2基板と、
前記第1基板と前記第2基板間に挟持された液晶層と、
前記第1基板と前記第2基板との間に位置する画素と、を備え、
前記画素は、前記第1基板上に配置された絶縁層と、前記絶縁層上に配置された画素電極を含む単位表示部と、を備えており、
前記絶縁層は、前記画素電極の側の第1面に、平面視において前記単位表示部と同じ大きさまたは前記単位表示部を含む大きさを有するとともに、前記第1基板の側に向かって湾曲する、湾曲部を有している液晶表示装置。 - 前記絶縁層は、前記画素電極の屈折率よりも低い屈折率を有している請求項1に記載の液晶表示装置。
- 前記絶縁層は、前記第1面を含む第1絶縁層、および前記第1絶縁層と前記第1基板との間に位置し、前記第1絶縁層よりも低屈折率の第2絶縁層を有し、
前記第2絶縁層は、前記第1絶縁層に接する第2面に前記第1基板の側に向かって窪んだ凹部を有する、請求項1または2に記載の液晶表示装置。 - 前記凹部は、底面が前記第1基板の側に向かって湾曲している、請求項3に記載の液晶表示装置。
- 前記凹部は、前記第1基板の主面に平行な断面における開口の面積が前記第2基板の側に向かうにつれて大きくなっている、請求項3または4に記載の液晶表示装置。
- 前記画素は、前記第2基板と前記液晶層との間に位置するカラーフィルタおよび環状の遮光膜をさらに有し、
前記遮光膜は、平面視で前記カラーフィルタを取り囲んでいる、請求項1〜5のいずれか1項に記載の液晶表示装置。 - 前記遮光膜は、平面視で前記湾曲部を取り囲んでいる、請求項6に記載の液晶表示装置。
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JP2019227527A JP7407585B2 (ja) | 2019-12-17 | 2019-12-17 | 液晶表示装置 |
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JP2019227527A JP7407585B2 (ja) | 2019-12-17 | 2019-12-17 | 液晶表示装置 |
Publications (2)
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JP2021096363A true JP2021096363A (ja) | 2021-06-24 |
JP7407585B2 JP7407585B2 (ja) | 2024-01-04 |
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JP2019227527A Active JP7407585B2 (ja) | 2019-12-17 | 2019-12-17 | 液晶表示装置 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0553102A (ja) * | 1991-08-23 | 1993-03-05 | Sony Corp | 液晶表示装置 |
JP2001004988A (ja) * | 1999-06-24 | 2001-01-12 | Hitachi Ltd | 液晶表示装置 |
JP2002091339A (ja) * | 2000-09-13 | 2002-03-27 | Seiko Epson Corp | 電気光学装置、それを用いた投射型液晶表示装置並びに電子機器、および電気光学装置の製造方法 |
JP2003177396A (ja) * | 2001-12-11 | 2003-06-27 | Seiko Epson Corp | 半透過・反射型電気光学装置、電子機器、および半透過・反射型電気光学装置の製造方法 |
JP2006154577A (ja) * | 2004-11-30 | 2006-06-15 | Sanyo Electric Co Ltd | 液晶表示装置 |
JP2010085537A (ja) * | 2008-09-30 | 2010-04-15 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
JP2010101946A (ja) * | 2008-10-21 | 2010-05-06 | Hitachi Displays Ltd | 液晶表示装置 |
CN106200173A (zh) * | 2016-07-18 | 2016-12-07 | 武汉华星光电技术有限公司 | 阵列基板及其制作方法 |
-
2019
- 2019-12-17 JP JP2019227527A patent/JP7407585B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0553102A (ja) * | 1991-08-23 | 1993-03-05 | Sony Corp | 液晶表示装置 |
JP2001004988A (ja) * | 1999-06-24 | 2001-01-12 | Hitachi Ltd | 液晶表示装置 |
JP2002091339A (ja) * | 2000-09-13 | 2002-03-27 | Seiko Epson Corp | 電気光学装置、それを用いた投射型液晶表示装置並びに電子機器、および電気光学装置の製造方法 |
JP2003177396A (ja) * | 2001-12-11 | 2003-06-27 | Seiko Epson Corp | 半透過・反射型電気光学装置、電子機器、および半透過・反射型電気光学装置の製造方法 |
JP2006154577A (ja) * | 2004-11-30 | 2006-06-15 | Sanyo Electric Co Ltd | 液晶表示装置 |
JP2010085537A (ja) * | 2008-09-30 | 2010-04-15 | Seiko Epson Corp | 電気光学装置及びその製造方法並びに電子機器 |
JP2010101946A (ja) * | 2008-10-21 | 2010-05-06 | Hitachi Displays Ltd | 液晶表示装置 |
CN106200173A (zh) * | 2016-07-18 | 2016-12-07 | 武汉华星光电技术有限公司 | 阵列基板及其制作方法 |
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