JP2021093399A - 対象物を加熱及び冷却するためのステージ - Google Patents
対象物を加熱及び冷却するためのステージ Download PDFInfo
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- JP2021093399A JP2021093399A JP2019221514A JP2019221514A JP2021093399A JP 2021093399 A JP2021093399 A JP 2021093399A JP 2019221514 A JP2019221514 A JP 2019221514A JP 2019221514 A JP2019221514 A JP 2019221514A JP 2021093399 A JP2021093399 A JP 2021093399A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 46
- 238000001816 cooling Methods 0.000 title claims abstract description 44
- 239000007789 gas Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 239000004519 grease Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 239000000835 fiber Substances 0.000 claims description 4
- 229910052756 noble gas Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 11
- 238000010586 diagram Methods 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000012530 fluid Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Chemical & Material Sciences (AREA)
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- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Solid Materials (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
チャンバの例は,真空チャンバである。対象物の例は,半導体集積回路,フラットディスプレイパネル,及び太陽光発電用パネルであるか,又はそれらを製造する途中の基板である。このステージ1は,対象物を搭載する搭載表面を有するステージ本体5,6と,搭載表面を加熱するための加熱部7と,搭載表面を冷却するための冷却部8と,を有する。冷却部8は,搭載表面に搭載された対象物を冷却するものであってもよいし,加熱部7より低温で対象物を加熱するために用いられてもよい。加熱部7及び冷却部8は,例えば,ステージを均一に加熱又は冷却できるように,渦を巻くように設置されてもよい。例えば,流体をステージ中央の下方から加熱部7及び冷却部8内を循環させる場合,加熱部7及び冷却部8は,ステージを巡るように設計されることが好ましい。
ガラス基板を温度制御するためのサセプタの製造
ガラス基板の温度制御のためサセプタが用いられる。サセプタの温度制御時間によってプロセスの時間に影響が出る。温度制御の時間短縮やスループット向上のため温度制御機能を有するサセプタが望まれた。
材質A6061のアルミの板に流路を加工し,そこにヒーターや熱伝導媒体を流すことで温度制御を行うこととした。図8は,流路を有するアルミ板の設計図である。ステージ(サセプタ)は,本来真空装置に内において用いられるものの,ここでは温度変化を測定するため,大気中にて温度変化を測定した。
それらを挿入することで熱伝導効率を向上することができる。
図10は,ステージの各部位における温度変化を示す図面に代わるグラフである。図10は,実験例2(図10(a)),実験例3(図10(b)),実験例4(図10(c))における温度変化を示す。縦軸は温度,横軸は経過時間を示す。シリコングリス,銀ペーストの熱抵抗は,熱伝導媒体無しの場合と比較し約1/2となっており,熱伝導効率向上することが分かった。また,ヘリウムガスの熱抵抗が最も低く,1/2未満となるので,熱伝導効率向上することが推測される。
2 プロセスチャンバ
3 基板
4 プロセスガス
5 上面テーブル
6 下面テーブル
7 加熱部
8 冷却部
9 テーブルサポート
10 溝
11 塑性変形部位
12 塑性変形部位
13 熱伝導媒体
14 シール板
15 シール部
Claims (8)
- チャンバ内に設置され,対象物を加熱及び冷却するためのステージであって,
前記ステージは,
対象物を搭載する搭載表面を有するステージ本体と,
前記搭載表面を加熱するための加熱部と,
前記搭載表面を冷却するための冷却部と,
を有する,ステージ。 - 請求項1に記載のステージであって,
前記ステージ本体は,前記加熱部が挿入される第1の溝と,
前記冷却部が挿入される第2の溝をさらに有し,
第1の溝と前記加熱部の隙間,及び第2の溝と前記冷却部の隙間に,熱伝導媒体を有する,
ステージ。 - 請求項2に記載のステージであって,前記熱伝導媒体は,銀,グリース,金属繊維,又はガスである,ステージ。
- 請求項2に記載のステージであって,前記熱伝導媒体は,希ガスである,ステージ。
- 請求項4に記載のステージであって,前記希ガスは,圧力が1気圧以上100気圧以下のヘリウムガスである,ステージ。
- 請求項1〜5のいずれかに記載のステージをサセプタとして有する真空装置。
- 請求項6に記載の真空装置であって,半導体集積回路,フラットディスプレイパネル,又は太陽電池パネルを製造するために用いられる真空装置。
- 請求項6に記載の真空装置を用いる,半導体集積回路,フラットディスプレイパネル,又は太陽電池パネルを製造する方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019221514A JP7401279B2 (ja) | 2019-12-06 | 2019-12-06 | 対象物を加熱及び冷却するためのステージ |
EP20895154.1A EP4071429A4 (en) | 2019-12-06 | 2020-10-23 | OBJECT HEATING AND COOLING STAGE |
CN202080091534.3A CN114902395A (zh) | 2019-12-06 | 2020-10-23 | 用来加热以及冷却对象物的工作台 |
US17/782,929 US20230002904A1 (en) | 2019-12-06 | 2020-10-23 | Stage for heating and cooling object |
PCT/JP2020/039995 WO2021111760A1 (ja) | 2019-12-06 | 2020-10-23 | 対象物を加熱及び冷却するためのステージ |
TW109142685A TW202123367A (zh) | 2019-12-06 | 2020-12-03 | 用來加熱以及冷卻對象物之工作台 |
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JP2019221514A JP7401279B2 (ja) | 2019-12-06 | 2019-12-06 | 対象物を加熱及び冷却するためのステージ |
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JP2021093399A true JP2021093399A (ja) | 2021-06-17 |
JP7401279B2 JP7401279B2 (ja) | 2023-12-19 |
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US (1) | US20230002904A1 (ja) |
EP (1) | EP4071429A4 (ja) |
JP (1) | JP7401279B2 (ja) |
CN (1) | CN114902395A (ja) |
TW (1) | TW202123367A (ja) |
WO (1) | WO2021111760A1 (ja) |
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JPH06260430A (ja) * | 1993-03-08 | 1994-09-16 | Eiko:Kk | プレートヒータ及びその製法 |
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JP2000021890A (ja) * | 1997-07-31 | 2000-01-21 | Toshiba Ceramics Co Ltd | カーボンヒータ |
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KR20100137795A (ko) * | 2009-06-23 | 2010-12-31 | (주)티티에스 | 서셉터 및 이의 제조 방법 및 이를 갖는 기판 처리 장치 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS519589B1 (ja) | 1970-12-28 | 1976-03-27 | ||
JPS57210706A (en) | 1981-06-19 | 1982-12-24 | Arupain Kk | Electronic volume control |
JP3064993B2 (ja) | 1997-10-30 | 2000-07-12 | 日本電気株式会社 | 半導体集積回路の製造方法 |
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- 2020-10-23 US US17/782,929 patent/US20230002904A1/en active Pending
- 2020-10-23 EP EP20895154.1A patent/EP4071429A4/en active Pending
- 2020-10-23 CN CN202080091534.3A patent/CN114902395A/zh active Pending
- 2020-10-23 WO PCT/JP2020/039995 patent/WO2021111760A1/ja unknown
- 2020-12-03 TW TW109142685A patent/TW202123367A/zh unknown
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US20230002904A1 (en) | 2023-01-05 |
TW202123367A (zh) | 2021-06-16 |
CN114902395A (zh) | 2022-08-12 |
WO2021111760A1 (ja) | 2021-06-10 |
JP7401279B2 (ja) | 2023-12-19 |
EP4071429A4 (en) | 2023-12-20 |
EP4071429A1 (en) | 2022-10-12 |
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