JP2021048157A - シリコン酸化膜をエッチングする方法及びプラズマ処理装置 - Google Patents
シリコン酸化膜をエッチングする方法及びプラズマ処理装置 Download PDFInfo
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- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 238000005530 etching Methods 0.000 title claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 182
- 239000000758 substrate Substances 0.000 claims abstract description 101
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 24
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 12
- 239000011737 fluorine Substances 0.000 claims abstract description 12
- 238000009832 plasma treatment Methods 0.000 claims description 44
- 239000000126 substance Substances 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000013626 chemical specie Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
Description
Claims (7)
- 基板のシリコン酸化膜をエッチングする方法であって、前記基板は、前記シリコン酸化膜及び該シリコン酸化膜上に設けられたマスクを有し、該方法は、
フルオロカーボンガス、フッ素を含有せず炭素を含有するガス、及び酸素含有ガスを含む第1の処理ガスから形成される第1のプラズマを用いて前記基板に対して第1のプラズマ処理を実行する工程であり、該第1のプラズマ処理の実行中に前記基板の温度は第1の温度に設定され、該第1のプラズマ処理は前記マスク上に炭素含有物質を堆積させ、且つ、前記シリコン酸化膜をエッチングする、該工程と、
第1のプラズマ処理を実行する前記工程の後に、フルオロカーボンガスを含む第2の処理ガスから形成される第2のプラズマを用いて前記基板に第2のプラズマ処理を実行する工程であり、該第2のプラズマ処理の実行中に前記基板の温度は第2の温度に設定され、該第2のプラズマ処理は前記シリコン酸化膜をエッチングする、該工程と、
を含み、
前記第1の温度は前記第2の温度よりも低い、方法。 - 第1の処理ガスと第2の処理ガスが同じ処理ガスである、請求項1に記載の方法。
- 第1のプラズマ処理を実行する前記工程及び第2のプラズマ処理を実行する前記工程は、プラズマ処理装置を用いて実行され、
第1のプラズマ処理を実行する前記工程において前記第1のプラズマを生成するために前記プラズマ処理装置で用いられる高周波電力は、第2のプラズマ処理を実行する前記工程において前記第2のプラズマを生成するために前記プラズマ処理装置で用いられる高周波電力よりも小さい、請求項1又は2に記載の方法。 - 前記第1の温度が前記第2の温度よりも低くなるように、第1のプラズマ処理を実行する前記工程及び第2のプラズマ処理を実行する前記工程において、前記基板を支持する基板支持器内のヒータの電力量が調整される、請求項1〜3の何れか一項に記載の方法。
- 前記第1の処理ガスにおいて、フッ素を含有せず炭素を含有する前記ガスは、COガスであり、前記酸素含有ガスは、O2ガスである、請求項1〜4の何れか一項に記載の方法。
- 前記マスクは、有機材料から形成されたマスクである、請求項1〜5の何れか一項に記載の方法。
- チャンバと、
前記チャンバ内に設けられた基板支持器と、
フルオロカーボンガス、フッ素を含有せず炭素を含有するガス、及び酸素含有ガスを含む第1の処理ガス並びにフルオロカーボンガスを含む第2の処理ガスを前記チャンバ内に供給するように構成されたガス供給部と、
前記チャンバ内でガスからプラズマを生成するために高周波電力を発生するように構成された高周波電源と、
前記ガス供給部及び前記高周波電源を制御するように構成された制御部と、
を備え、
前記制御部は、
基板のシリコン酸化膜をエッチングし、且つ、該シリコン酸化膜上に設けられた該基板のマスク上に炭素含有堆積物を形成するために、前記チャンバ内に前記第1の処理ガスを供給するよう前記ガス供給部を制御し、前記チャンバ内で前記第1の処理ガスから第1のプラズマを生成するよう前記高周波電源を制御する第1の制御を実行し、
前記シリコン酸化膜を更にエッチングするために、前記チャンバ内に前記第2の処理ガスを供給するよう前記ガス供給部を制御し、前記チャンバ内で前記第2の処理ガスから第2のプラズマを生成するよう前記高周波電源を制御する第2の制御を実行し、
前記第1の制御において前記基板の温度を、前記第2の制御において設定する前記基板の温度よりも低い温度に設定する、
プラズマ処理装置。
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JP2019168083A JP7308110B2 (ja) | 2019-09-17 | 2019-09-17 | シリコン酸化膜をエッチングする方法及びプラズマ処理装置 |
US17/010,983 US20210082712A1 (en) | 2019-09-17 | 2020-09-03 | Method of etching silicon oxide film and plasma processing apparatus |
KR1020200112679A KR20210032904A (ko) | 2019-09-17 | 2020-09-03 | 실리콘 산화막을 에칭하는 방법 및 플라즈마 처리 장치 |
CN202010919630.4A CN112530799A (zh) | 2019-09-17 | 2020-09-04 | 蚀刻氧化硅膜的方法及等离子体处理装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2004319972A (ja) * | 2003-03-31 | 2004-11-11 | Tokyo Electron Ltd | エッチング方法及びエッチング装置 |
JP2006128245A (ja) * | 2004-10-27 | 2006-05-18 | Sony Corp | 絶縁膜の加工方法 |
JP2011023766A (ja) * | 2004-06-23 | 2011-02-03 | Hitachi High-Technologies Corp | ドライエッチング方法およびその装置 |
JP2018120924A (ja) * | 2017-01-24 | 2018-08-02 | 東京エレクトロン株式会社 | プラズマ処理装置のチャンバ本体の内部のクリーニングを含むプラズマ処理方法 |
JP2019087626A (ja) * | 2017-11-07 | 2019-06-06 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004319972A (ja) * | 2003-03-31 | 2004-11-11 | Tokyo Electron Ltd | エッチング方法及びエッチング装置 |
JP2011023766A (ja) * | 2004-06-23 | 2011-02-03 | Hitachi High-Technologies Corp | ドライエッチング方法およびその装置 |
JP2006128245A (ja) * | 2004-10-27 | 2006-05-18 | Sony Corp | 絶縁膜の加工方法 |
JP2018120924A (ja) * | 2017-01-24 | 2018-08-02 | 東京エレクトロン株式会社 | プラズマ処理装置のチャンバ本体の内部のクリーニングを含むプラズマ処理方法 |
JP2019087626A (ja) * | 2017-11-07 | 2019-06-06 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
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CN112530799A (zh) | 2021-03-19 |
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