JP2020537823A - Ledエミッタ関連出願の説明のためのナノフォトニクス反射器 - Google Patents
Ledエミッタ関連出願の説明のためのナノフォトニクス反射器 Download PDFInfo
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- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
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- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
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- G02B5/00—Optical elements other than lenses
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- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
- G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
- G02B5/3041—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid comprising multiple thin layers, e.g. multilayer stacks
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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Abstract
Description
本出願は、2017年10月17日に出願された米国仮特許出願第62/573,382号、及び2018年10月15日に出願された「NANO-PHOTONICS REFLECTOR FOR LED EMITTERS」と題する米国特許出願第16/160,713号、及び2018年1月23日に出願された欧州特許出願第18152921.5号の利益を主張するものであり、これらの出願は、いずれも、引用により、あたかも完全に記載されているかのように本明細書に組み込まれている。
本発明は、発光ダイオード(LED)エミッタ用のナノフォトニクス反射器、より詳細には、入射光を完全に遮断するために分布ブラッグ反射器(DBR)の制限された反射率を改善する反射器構造に関する。
を有する。
ブルースター角(100%透過)は、
Claims (20)
- 発光ダイオード(LED)のための反射器として使用するためのデバイスであって、
LEDによって放出される横電界(TE)放射を反射するように設計された第1層と、
LEDから放出される横磁界(TM)放射を遮断するように設計された第2層と、
を有する、デバイス。 - 透明伝導性酸化物層として作動するように設計された複数のITO層をさらに有する、
請求項1記載のデバイス。 - 前記ITO層はIZO層である、
請求項2記載のデバイス。 - 前記第1層は一次元(1D)分布ブラッグ反射(DBR)層である、
請求項1記載のデバイス。 - 前記第2層は二次元(2D)フォトニック結晶(PhC)である、
請求項1記載のデバイス。 - 前記第2PhCは水平シリンダーバーを含む、
請求項5記載のデバイス。 - 前記第2層は材料対を含む、
請求項1記載のデバイス。 - 前記材料対はSiO2とTiO2とを含む、
請求項7記載のデバイス。 - 前記第2層は三次元(3D)PhCである、
請求項1記載のデバイス。 - 前記3DPhCは垂直シリンダーバーを含む、
請求項9記載のデバイス。 - 前記3DPhCは球体を含む、
請求項9記載のデバイス。 - 前記3DPhCは木材パイルを含む、
請求項9記載のデバイス。 - 前記第2層は双曲線メタ材料(HMM)である、
請求項1記載のデバイス。 - 前記第2層はサブ波長厚さの金属/誘電層を交互に配置することによって形成されている、
請求項1記載のデバイス。 - 底部金属反射器をさらに有する、
請求項1記載のデバイス。 - 前記底部金属反射器は有利Agである、
請求項15記載のデバイス。 - 前記底部金属反射器は結合層として作用する、
請求項15記載のデバイス。 - 前記第1層及び前記第2層は略同じ厚さである、
請求項1記載のデバイス。 - LED用の反射器を含む発光ダイオードデバイス(LED)であって、
III/V直接バンドギャップ半導体として形成され、放射を生成する半導体層と、
前記半導体層によって放出される横電界(TE)放射を反射するように設計された一次元(1D)分布ブラッグ反射(DBR)層と、
前記半導体層によって放出される横磁界(TM)放射を遮断するように設計された第2層であって、前記第2層は、二次元(2D)フォトニック結晶(PhC)及び三次元(3D)PhCのうちの1つである、第2層と、
透明伝導性酸化物層として動作し、表面反射を最小にするように設計された複数のITO層と、
異なる方向に放射を反射する、Agフリーの底部金属反射器であって、前記底部金属反射器は結合層として作用する、底部金属反射器と、
を有する、発光ダイオードデバイス。 - LED用の反射器を含む発光ダイオードデバイス(LED)内の光を反射する方法であって、
III/V直接バンドギャップ半導体として形成された半導体層を介して放射を生成するステップと、
一次元(1D)分布ブラッグ反射(DBR)層を有する半導体層によって放出される横電界(TE)放射を反射するステップと、
第2層を有する前記半導体層によって放出される横磁界(TM)放射を遮断するステップであって、前記第2層は、二次元(2D)フォトニック結晶(PhC)及び三次元(3D)PhCのうちの一つである、ステップと、
を含む、方法。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
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US201762573382P | 2017-10-17 | 2017-10-17 | |
US62/573,382 | 2017-10-17 | ||
EP18152921 | 2018-01-23 | ||
EP18152921.5 | 2018-01-23 | ||
US16/160,713 US11024767B2 (en) | 2017-10-17 | 2018-10-15 | Nano-photonics reflector for LED emitters |
US16/160,713 | 2018-10-15 | ||
PCT/US2018/056062 WO2019079282A1 (en) | 2017-10-17 | 2018-10-16 | NANOPHOTONIC REFLECTOR FOR LED TRANSMITTERS |
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JP2020537823A true JP2020537823A (ja) | 2020-12-24 |
JP7479279B2 JP7479279B2 (ja) | 2024-05-08 |
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US (3) | US11024767B2 (ja) |
EP (1) | EP3698414B1 (ja) |
JP (1) | JP7479279B2 (ja) |
KR (1) | KR102357225B1 (ja) |
CN (1) | CN111466035B (ja) |
TW (1) | TWI808104B (ja) |
WO (1) | WO2019079282A1 (ja) |
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US11024767B2 (en) | 2017-10-17 | 2021-06-01 | Lumileds Llc | Nano-photonics reflector for LED emitters |
CN111969085A (zh) * | 2020-09-14 | 2020-11-20 | 南京邮电大学 | 一种基于图形化衬底的led及其制备方法 |
US20230361534A1 (en) | 2022-05-06 | 2023-11-09 | Nexus Photonics, Inc. | Heterogeneous gan lasers and active components |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030235229A1 (en) * | 2002-06-19 | 2003-12-25 | Hongyu Deng | Vertical cavity surface emitting laser using photonic crystals |
JP2005197650A (ja) * | 2004-01-08 | 2005-07-21 | Kankin Kigyo Yugenkoshi | 発光素子 |
JP2006196658A (ja) * | 2005-01-13 | 2006-07-27 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
JP2006343407A (ja) * | 2005-06-07 | 2006-12-21 | National Institute Of Information & Communication Technology | 2枚の基板間の位置合わせ方法と、それを用いたフォトニッククリスタルの製造方法 |
JP2010123921A (ja) * | 2008-10-22 | 2010-06-03 | Nichia Corp | 窒化物半導体発光素子の製造方法及び窒化物半導体発光素子 |
JP2016146407A (ja) * | 2015-02-06 | 2016-08-12 | 豊田合成株式会社 | 光学多層膜および発光素子 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6943377B2 (en) * | 2002-11-21 | 2005-09-13 | Sensor Electronic Technology, Inc. | Light emitting heterostructure |
US7829905B2 (en) * | 2006-09-07 | 2010-11-09 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Semiconductor light emitting device |
US8017963B2 (en) * | 2008-12-08 | 2011-09-13 | Cree, Inc. | Light emitting diode with a dielectric mirror having a lateral configuration |
JP2010147359A (ja) * | 2008-12-22 | 2010-07-01 | Hitachi Ltd | 光モジュール |
US9362460B2 (en) | 2010-07-19 | 2016-06-07 | Rensselaer Polytechnic Institute | Integrated polarized light emitting diode with a built-in rotator |
TWI429110B (zh) * | 2011-01-07 | 2014-03-01 | Nat Univ Tsing Hua | 具有自我複製式光子晶體之發光元件與其製造方法 |
JP2012186414A (ja) * | 2011-03-08 | 2012-09-27 | Toshiba Corp | 発光装置 |
JP2013161965A (ja) * | 2012-02-06 | 2013-08-19 | Kyoto Univ | 半導体発光素子 |
US20140008660A1 (en) * | 2012-03-14 | 2014-01-09 | Lightwave Photonics, Inc. | Materials, structures, and methods for optical and electrical iii-nitride semiconductor devices |
CN102820398B (zh) * | 2012-08-31 | 2015-05-27 | 厦门大学 | 分布式布拉格反射与小面积金属接触复合三维电极 |
CN108389946B (zh) * | 2013-10-11 | 2022-04-08 | 世迈克琉明有限公司 | 半导体发光元件 |
JP6595801B2 (ja) * | 2014-05-30 | 2019-10-23 | エルジー イノテック カンパニー リミテッド | 発光素子 |
WO2016105481A2 (en) * | 2014-12-24 | 2016-06-30 | The Trustees Of Columbia University In The City Of New York | Light emission from electrically biased graphene |
JP5999800B1 (ja) * | 2015-01-16 | 2016-09-28 | 丸文株式会社 | 深紫外led及びその製造方法 |
KR20170005317A (ko) * | 2015-07-03 | 2017-01-12 | 삼성전자주식회사 | 반도체 발광소자 |
US10263144B2 (en) * | 2015-10-16 | 2019-04-16 | Robbie J. Jorgenson | System and method for light-emitting devices on lattice-matched metal substrates |
US11024767B2 (en) | 2017-10-17 | 2021-06-01 | Lumileds Llc | Nano-photonics reflector for LED emitters |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030235229A1 (en) * | 2002-06-19 | 2003-12-25 | Hongyu Deng | Vertical cavity surface emitting laser using photonic crystals |
JP2005197650A (ja) * | 2004-01-08 | 2005-07-21 | Kankin Kigyo Yugenkoshi | 発光素子 |
JP2006196658A (ja) * | 2005-01-13 | 2006-07-27 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
JP2006343407A (ja) * | 2005-06-07 | 2006-12-21 | National Institute Of Information & Communication Technology | 2枚の基板間の位置合わせ方法と、それを用いたフォトニッククリスタルの製造方法 |
JP2010123921A (ja) * | 2008-10-22 | 2010-06-03 | Nichia Corp | 窒化物半導体発光素子の製造方法及び窒化物半導体発光素子 |
JP2016146407A (ja) * | 2015-02-06 | 2016-08-12 | 豊田合成株式会社 | 光学多層膜および発光素子 |
Non-Patent Citations (1)
Title |
---|
青木 画奈: "マイクロマニピュレーション技術と3次元フォトニック結晶への応用", 電子情報通信学会論文誌 C, vol. 86, no. 6, JPN7022005663, June 2003 (2003-06-01), pages 582 - 590, ISSN: 0004933828 * |
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US20230197894A1 (en) | 2023-06-22 |
CN111466035B (zh) | 2024-02-06 |
KR20200065072A (ko) | 2020-06-08 |
US11024767B2 (en) | 2021-06-01 |
EP3698414A1 (en) | 2020-08-26 |
TWI808104B (zh) | 2023-07-11 |
WO2019079282A1 (en) | 2019-04-25 |
CN111466035A (zh) | 2020-07-28 |
EP3698414B1 (en) | 2021-12-22 |
US20210328101A1 (en) | 2021-10-21 |
US20190115496A1 (en) | 2019-04-18 |
JP7479279B2 (ja) | 2024-05-08 |
KR102357225B1 (ko) | 2022-02-08 |
US11532766B2 (en) | 2022-12-20 |
TW201926739A (zh) | 2019-07-01 |
US11949041B2 (en) | 2024-04-02 |
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