JP2020535657A - 金属酸化物の原子層エッチング - Google Patents
金属酸化物の原子層エッチング Download PDFInfo
- Publication number
- JP2020535657A JP2020535657A JP2020517569A JP2020517569A JP2020535657A JP 2020535657 A JP2020535657 A JP 2020535657A JP 2020517569 A JP2020517569 A JP 2020517569A JP 2020517569 A JP2020517569 A JP 2020517569A JP 2020535657 A JP2020535657 A JP 2020535657A
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- Prior art keywords
- layer
- etching
- metal oxide
- metal hydride
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005530 etching Methods 0.000 title claims abstract description 76
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 44
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 229910052987 metal hydride Inorganic materials 0.000 claims abstract description 44
- 150000004681 metal hydrides Chemical class 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000007789 gas Substances 0.000 claims abstract description 40
- 239000001257 hydrogen Substances 0.000 claims abstract description 40
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 40
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 238000000859 sublimation Methods 0.000 claims abstract description 18
- 230000008022 sublimation Effects 0.000 claims abstract description 18
- 238000001816 cooling Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000012545 processing Methods 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000004891 communication Methods 0.000 description 9
- 150000004678 hydrides Chemical class 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- SPRIOUNJHPCKPV-UHFFFAOYSA-N hydridoaluminium Chemical compound [AlH] SPRIOUNJHPCKPV-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
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- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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Abstract
Description
本出願は、全ての目的のために参照として本明細書に援用される、2017年9月27日付けの米国出願第15/717,076号の優先権の利益を主張する。
例では、構造物を有する基板が処理チャンバに設置される(工程104)。図2Aは、金属酸化物層212の下の中間層208の下に半導体基板204を有する積層などの構造物200の概略断面図である。この例では、金属酸化物層は、酸化アルミニウムである。金属酸化物層212の上に、パターニングされた開口部220を有するパターニングされたマスク216が形成される。構造物200は、処理チャンバ内に設置される。
Claims (16)
- 複数のサイクルを提供することを含む、半導体基板上の金属酸化物層をエッチングするための方法であって、
各サイクルは、
前記金属酸化物層を反応性水素含有ガスまたはプラズマに曝露して、前記金属酸化物層の少なくとも一部を金属水素化物層に変換することと、
前記反応性水素含有ガスまたはプラズマへの前記金属酸化物層の前記曝露を停止することと、
前記金属水素化物層を少なくとも昇華温度まで加熱して前記金属水素化物層を昇華させることと、
前記金属酸化物層を前記昇華温度より低い温度まで冷却することと、
を含む、方法。 - 請求項1に記載の方法であって、
前記反応性水素含有ガスまたはプラズマは、無ハロゲンおよび無酸素である、方法。 - 請求項1に記載の方法であって、
前記複数のサイクルの各サイクルは、無ハロゲンのプロセスである、方法。 - 請求項1に記載の方法であって、
前記金属酸化物層の金属酸化物は、酸化アルミニウム、酸化チタン、酸化マグネシウム、および酸化ハフニウムのうちの少なくとも1つである、方法。 - 請求項1に記載の方法であって、
前記金属水素化物層の前記加熱は、前記金属水素化物層を100℃より高い温度まで加熱し、前記金属酸化物層の前記冷却は、前記金属酸化物層を80℃より低い温度まで冷却する、方法。 - 請求項5に記載の方法であって、
前記金属水素化物層の前記加熱は、前記金属水素化物層を500℃以下の温度まで加熱する、方法。 - 請求項1に記載の方法であって、
前記金属水素化物層の厚さは、0.1nm未満である、方法。 - 請求項1に記載の方法であって、
前記金属水素化物層の前記加熱および前記金属酸化物層の前記冷却は、同じ反応チャンバで実施される、方法。 - 請求項1に記載の方法であって、
前記金属水素化物層の前記加熱は、第1の基板ステーションで実施され、前記金属酸化物層の前記冷却は、第2の基板ステーションで実施される、方法。 - 請求項1に記載の方法であって、
前記金属酸化物層の前記エッチングは、化学的除去工程なしで実施され、前記金属水素化物層の前記昇華は、化学的除去工程なしで実施される、方法。 - 半導体基板上の金属酸化物のエッチング層をエッチングするための装置であって、
反応性水素含有ガスまたはプラズマを前記エッチング層に提供するための反応性水素含有ガス源またはプラズマ源と、
前記エッチング層を加熱するためのエッチング層加熱器と、
前記エッチング層を冷却するためのエッチング層冷却器と、
前記反応性水素含有ガス源またはプラズマ源、前記エッチング層加熱器、および前記エッチング層冷却器に制御可能に接続されたコントローラであって、
少なくとも1つのプロセッサと、
複数のサイクルを提供するためのコンピュータ可読コードを含むコンピュータ可読媒体であって、各サイクルは、
前記エッチング層を前記反応性水素含有ガス源または前記プラズマ源からの反応性水素含有ガスまたはプラズマに曝露して、前記エッチング層の少なくとも一部を金属水素化物層に変換することと、
前記反応性水素含有ガスまたはプラズマへの前記エッチング層の前記曝露を停止することと、
前記金属水素化物層を少なくとも昇華温度まで加熱して前記金属水素化物層を昇華させることと、
前記エッチング層を前記昇華温度より低い温度まで冷却することと、を含む、コンピュータ可読媒体と、を備えるコントローラと、
を備える、装置。 - 請求項11に記載の装置であって、
前記エッチング層加熱器および前記エッチング層冷却器は、各々、前記エッチング層の温度を少なくとも3秒以内に少なくとも30℃ずつ変化させることができる、装置。 - 請求項11に記載の装置であって、
前記エッチング層加熱器は、前記エッチング層を500℃以下の温度まで加熱する、装置。 - 請求項11に記載の装置であって、
前記エッチング層加熱器および前記エッチング層冷却器は、同じ反応チャンバに設置される、装置。 - 請求項11に記載の装置であって、
前記エッチング層加熱器および前記エッチング層冷却器は、異なる基板ステーションに設置される、装置。 - 請求項11に記載の装置であって、
前記エッチング層加熱器および前記エッチング層冷却器は、ペルチェ加熱器およびペルチェ冷却器を含む、装置。
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PCT/US2018/044439 WO2019067080A1 (en) | 2017-09-27 | 2018-07-30 | ATOMIC LAYER BURNING OF METAL OXIDE |
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