JP2020533807A5 - - Google Patents

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Publication number
JP2020533807A5
JP2020533807A5 JP2020515236A JP2020515236A JP2020533807A5 JP 2020533807 A5 JP2020533807 A5 JP 2020533807A5 JP 2020515236 A JP2020515236 A JP 2020515236A JP 2020515236 A JP2020515236 A JP 2020515236A JP 2020533807 A5 JP2020533807 A5 JP 2020533807A5
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JP
Japan
Prior art keywords
target material
target
radiation beam
additional layer
layer
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JP2020515236A
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English (en)
Japanese (ja)
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JP2020533807A (ja
JP7360172B2 (ja
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Priority claimed from GB1714802.4A external-priority patent/GB2566477A/en
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Publication of JP2020533807A5 publication Critical patent/JP2020533807A5/ja
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JP2020515236A 2017-09-14 2018-09-12 ターゲット材料を処理する方法 Active JP7360172B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1714802.4A GB2566477A (en) 2017-09-14 2017-09-14 Method of processing a target material
GB1714802.4 2017-09-14
PCT/EP2018/074649 WO2019053082A1 (en) 2017-09-14 2018-09-12 METHOD OF PROCESSING TARGET MATERIAL

Publications (3)

Publication Number Publication Date
JP2020533807A JP2020533807A (ja) 2020-11-19
JP2020533807A5 true JP2020533807A5 (https=) 2021-09-16
JP7360172B2 JP7360172B2 (ja) 2023-10-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020515236A Active JP7360172B2 (ja) 2017-09-14 2018-09-12 ターゲット材料を処理する方法

Country Status (8)

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US (1) US11107679B2 (https=)
EP (1) EP3682463A1 (https=)
JP (1) JP7360172B2 (https=)
KR (1) KR102566382B1 (https=)
CN (1) CN111095482B (https=)
GB (1) GB2566477A (https=)
TW (1) TWI801418B (https=)
WO (1) WO2019053082A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7571073B2 (ja) * 2022-03-24 2024-10-22 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、プログラム、及び基板処理装置
CN116532808A (zh) * 2023-05-17 2023-08-04 泰兰特激光技术(武汉)有限公司 一种局域改变无机非金属材料表面载流子浓度的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI316736B (en) * 2003-05-02 2009-11-01 Au Optronics Corp Method of fabricating polysilicon film by excimer laser crystallization process
JP4769491B2 (ja) * 2004-06-04 2011-09-07 株式会社 液晶先端技術開発センター 結晶化方法、薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置
KR100646937B1 (ko) * 2005-08-22 2006-11-23 삼성에스디아이 주식회사 다결정 실리콘 박막트랜지스터 및 그 제조방법
TW200713460A (en) * 2005-09-22 2007-04-01 Adv Lcd Tech Dev Ct Co Ltd Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method
TWI280292B (en) * 2005-12-12 2007-05-01 Ind Tech Res Inst Method of fabricating a poly-silicon thin film
KR101375834B1 (ko) * 2007-11-20 2014-03-18 삼성전자주식회사 다결정 실리콘 박막 및 이를 적용하는 박막 트랜지스터의제조방법
CN101919058B (zh) * 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
WO2009068756A1 (fr) * 2007-11-28 2009-06-04 Commissariat A L'energie Atomique Procede de cristallisation
US8569155B2 (en) * 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
JP5342898B2 (ja) * 2009-02-26 2013-11-13 三菱電機株式会社 逆スタガ構造の薄膜トランジスタ及びその製造方法
JP2011003666A (ja) * 2009-06-17 2011-01-06 Sony Corp 照射装置および半導体素子の製造方法
CN107039532B (zh) * 2012-03-30 2020-08-25 帝人株式会社 掺杂剂注入层、其形成方法及半导体装置的制造方法
US9368347B2 (en) * 2012-09-20 2016-06-14 Thomas Christ Dimitriadis Apparatus and method for irradiating
JP2014090045A (ja) * 2012-10-30 2014-05-15 Sanken Electric Co Ltd イオン導入層の活性化方法、および、半導体装置の製造方法
TWI593024B (zh) * 2015-07-24 2017-07-21 友達光電股份有限公司 薄膜電晶體的製造方法
KR102781391B1 (ko) * 2015-09-09 2025-03-17 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 작업물들을 레이저 가공하기 위한 레이저 가공 장치, 방법들 및 관련된 배열들

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