GB2566477A - Method of processing a target material - Google Patents

Method of processing a target material Download PDF

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Publication number
GB2566477A
GB2566477A GB1714802.4A GB201714802A GB2566477A GB 2566477 A GB2566477 A GB 2566477A GB 201714802 A GB201714802 A GB 201714802A GB 2566477 A GB2566477 A GB 2566477A
Authority
GB
United Kingdom
Prior art keywords
target material
target
layer
additional layer
radiation beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB1714802.4A
Other languages
English (en)
Other versions
GB201714802D0 (en
Inventor
O'connor Gerard
Farid Nazar
Das Gupta Pinaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National University of Ireland Galway NUI
Original Assignee
National University of Ireland Galway NUI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National University of Ireland Galway NUI filed Critical National University of Ireland Galway NUI
Priority to GB1714802.4A priority Critical patent/GB2566477A/en
Publication of GB201714802D0 publication Critical patent/GB201714802D0/en
Priority to CN201880059897.1A priority patent/CN111095482B/zh
Priority to JP2020515236A priority patent/JP7360172B2/ja
Priority to KR1020207008416A priority patent/KR102566382B1/ko
Priority to PCT/EP2018/074649 priority patent/WO2019053082A1/en
Priority to EP18768889.0A priority patent/EP3682463A1/en
Priority to TW107132502A priority patent/TWI801418B/zh
Publication of GB2566477A publication Critical patent/GB2566477A/en
Priority to US16/782,894 priority patent/US11107679B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electromagnetism (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
GB1714802.4A 2017-09-14 2017-09-14 Method of processing a target material Withdrawn GB2566477A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GB1714802.4A GB2566477A (en) 2017-09-14 2017-09-14 Method of processing a target material
CN201880059897.1A CN111095482B (zh) 2017-09-14 2018-09-12 处理靶材料的方法
JP2020515236A JP7360172B2 (ja) 2017-09-14 2018-09-12 ターゲット材料を処理する方法
KR1020207008416A KR102566382B1 (ko) 2017-09-14 2018-09-12 표적 재료의 가공 방법
PCT/EP2018/074649 WO2019053082A1 (en) 2017-09-14 2018-09-12 METHOD OF PROCESSING TARGET MATERIAL
EP18768889.0A EP3682463A1 (en) 2017-09-14 2018-09-12 Method of processing a target material
TW107132502A TWI801418B (zh) 2017-09-14 2018-09-14 處理目標材料之方法
US16/782,894 US11107679B2 (en) 2017-09-14 2020-02-05 Method of processing a target material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1714802.4A GB2566477A (en) 2017-09-14 2017-09-14 Method of processing a target material

Publications (2)

Publication Number Publication Date
GB201714802D0 GB201714802D0 (en) 2017-11-01
GB2566477A true GB2566477A (en) 2019-03-20

Family

ID=60159472

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1714802.4A Withdrawn GB2566477A (en) 2017-09-14 2017-09-14 Method of processing a target material

Country Status (8)

Country Link
US (1) US11107679B2 (https=)
EP (1) EP3682463A1 (https=)
JP (1) JP7360172B2 (https=)
KR (1) KR102566382B1 (https=)
CN (1) CN111095482B (https=)
GB (1) GB2566477A (https=)
TW (1) TWI801418B (https=)
WO (1) WO2019053082A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7571073B2 (ja) * 2022-03-24 2024-10-22 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、プログラム、及び基板処理装置
CN116532808A (zh) * 2023-05-17 2023-08-04 泰兰特激光技术(武汉)有限公司 一种局域改变无机非金属材料表面载流子浓度的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040235276A1 (en) * 2003-05-02 2004-11-25 Kun-Chih Lin Method of fabricating polysilicon film by excimer laser crystallization process
EP1758155A1 (en) * 2005-08-22 2007-02-28 Samsung SDI Co., Ltd. Polysilicon thin film transistor and method of fabricating the same
US20070063184A1 (en) * 2005-09-22 2007-03-22 Hiroyuki Ogawa Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method
US20070134892A1 (en) * 2005-12-12 2007-06-14 Yu-Cheng Chen Method of fabricating a poly-silicon thin film
JP2014090045A (ja) * 2012-10-30 2014-05-15 Sanken Electric Co Ltd イオン導入層の活性化方法、および、半導体装置の製造方法
EP2833391A1 (en) * 2012-03-30 2015-02-04 Teijin Limited Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4769491B2 (ja) * 2004-06-04 2011-09-07 株式会社 液晶先端技術開発センター 結晶化方法、薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置
KR101375834B1 (ko) * 2007-11-20 2014-03-18 삼성전자주식회사 다결정 실리콘 박막 및 이를 적용하는 박막 트랜지스터의제조방법
CN101919058B (zh) * 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
WO2009068756A1 (fr) * 2007-11-28 2009-06-04 Commissariat A L'energie Atomique Procede de cristallisation
US8569155B2 (en) * 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
JP5342898B2 (ja) * 2009-02-26 2013-11-13 三菱電機株式会社 逆スタガ構造の薄膜トランジスタ及びその製造方法
JP2011003666A (ja) * 2009-06-17 2011-01-06 Sony Corp 照射装置および半導体素子の製造方法
US9368347B2 (en) * 2012-09-20 2016-06-14 Thomas Christ Dimitriadis Apparatus and method for irradiating
TWI593024B (zh) * 2015-07-24 2017-07-21 友達光電股份有限公司 薄膜電晶體的製造方法
KR102781391B1 (ko) * 2015-09-09 2025-03-17 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 작업물들을 레이저 가공하기 위한 레이저 가공 장치, 방법들 및 관련된 배열들

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040235276A1 (en) * 2003-05-02 2004-11-25 Kun-Chih Lin Method of fabricating polysilicon film by excimer laser crystallization process
EP1758155A1 (en) * 2005-08-22 2007-02-28 Samsung SDI Co., Ltd. Polysilicon thin film transistor and method of fabricating the same
US20070063184A1 (en) * 2005-09-22 2007-03-22 Hiroyuki Ogawa Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method
US20070134892A1 (en) * 2005-12-12 2007-06-14 Yu-Cheng Chen Method of fabricating a poly-silicon thin film
EP2833391A1 (en) * 2012-03-30 2015-02-04 Teijin Limited Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer
JP2014090045A (ja) * 2012-10-30 2014-05-15 Sanken Electric Co Ltd イオン導入層の活性化方法、および、半導体装置の製造方法

Also Published As

Publication number Publication date
CN111095482B (zh) 2024-06-28
JP2020533807A (ja) 2020-11-19
US20200211844A1 (en) 2020-07-02
KR20200051657A (ko) 2020-05-13
US11107679B2 (en) 2021-08-31
WO2019053082A1 (en) 2019-03-21
KR102566382B1 (ko) 2023-08-11
TWI801418B (zh) 2023-05-11
CN111095482A (zh) 2020-05-01
TW201923824A (zh) 2019-06-16
JP7360172B2 (ja) 2023-10-12
GB201714802D0 (en) 2017-11-01
EP3682463A1 (en) 2020-07-22

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WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)