KR102566382B1 - 표적 재료의 가공 방법 - Google Patents

표적 재료의 가공 방법 Download PDF

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Publication number
KR102566382B1
KR102566382B1 KR1020207008416A KR20207008416A KR102566382B1 KR 102566382 B1 KR102566382 B1 KR 102566382B1 KR 1020207008416 A KR1020207008416 A KR 1020207008416A KR 20207008416 A KR20207008416 A KR 20207008416A KR 102566382 B1 KR102566382 B1 KR 102566382B1
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layer
target
target material
additional layer
radiation beam
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Korean (ko)
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KR20200051657A (ko
Inventor
제라드 오코너
나자르 파리드
굽타 피나키 다스
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내셔널 유니버시티 오브 아일랜드, 갈웨이
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    • H01L21/02686—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H01L21/02532—
    • H01L21/02565—
    • H01L21/268—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electromagnetism (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
KR1020207008416A 2017-09-14 2018-09-12 표적 재료의 가공 방법 Active KR102566382B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1714802.4A GB2566477A (en) 2017-09-14 2017-09-14 Method of processing a target material
GB1714802.4 2017-09-14
PCT/EP2018/074649 WO2019053082A1 (en) 2017-09-14 2018-09-12 METHOD OF PROCESSING TARGET MATERIAL

Publications (2)

Publication Number Publication Date
KR20200051657A KR20200051657A (ko) 2020-05-13
KR102566382B1 true KR102566382B1 (ko) 2023-08-11

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KR1020207008416A Active KR102566382B1 (ko) 2017-09-14 2018-09-12 표적 재료의 가공 방법

Country Status (8)

Country Link
US (1) US11107679B2 (https=)
EP (1) EP3682463A1 (https=)
JP (1) JP7360172B2 (https=)
KR (1) KR102566382B1 (https=)
CN (1) CN111095482B (https=)
GB (1) GB2566477A (https=)
TW (1) TWI801418B (https=)
WO (1) WO2019053082A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7571073B2 (ja) * 2022-03-24 2024-10-22 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、プログラム、及び基板処理装置
CN116532808A (zh) * 2023-05-17 2023-08-04 泰兰特激光技术(武汉)有限公司 一种局域改变无机非金属材料表面载流子浓度的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170025541A1 (en) * 2015-07-24 2017-01-26 Au Optronics Corporation Method of fabricating thin film transistor

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI316736B (en) * 2003-05-02 2009-11-01 Au Optronics Corp Method of fabricating polysilicon film by excimer laser crystallization process
JP4769491B2 (ja) * 2004-06-04 2011-09-07 株式会社 液晶先端技術開発センター 結晶化方法、薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置
KR100646937B1 (ko) * 2005-08-22 2006-11-23 삼성에스디아이 주식회사 다결정 실리콘 박막트랜지스터 및 그 제조방법
TW200713460A (en) * 2005-09-22 2007-04-01 Adv Lcd Tech Dev Ct Co Ltd Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method
TWI280292B (en) * 2005-12-12 2007-05-01 Ind Tech Res Inst Method of fabricating a poly-silicon thin film
KR101375834B1 (ko) * 2007-11-20 2014-03-18 삼성전자주식회사 다결정 실리콘 박막 및 이를 적용하는 박막 트랜지스터의제조방법
CN101919058B (zh) * 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
WO2009068756A1 (fr) * 2007-11-28 2009-06-04 Commissariat A L'energie Atomique Procede de cristallisation
US8569155B2 (en) * 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
JP5342898B2 (ja) * 2009-02-26 2013-11-13 三菱電機株式会社 逆スタガ構造の薄膜トランジスタ及びその製造方法
JP2011003666A (ja) * 2009-06-17 2011-01-06 Sony Corp 照射装置および半導体素子の製造方法
CN107039532B (zh) * 2012-03-30 2020-08-25 帝人株式会社 掺杂剂注入层、其形成方法及半导体装置的制造方法
US9368347B2 (en) * 2012-09-20 2016-06-14 Thomas Christ Dimitriadis Apparatus and method for irradiating
JP2014090045A (ja) * 2012-10-30 2014-05-15 Sanken Electric Co Ltd イオン導入層の活性化方法、および、半導体装置の製造方法
KR102781391B1 (ko) * 2015-09-09 2025-03-17 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 작업물들을 레이저 가공하기 위한 레이저 가공 장치, 방법들 및 관련된 배열들

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170025541A1 (en) * 2015-07-24 2017-01-26 Au Optronics Corporation Method of fabricating thin film transistor

Also Published As

Publication number Publication date
CN111095482B (zh) 2024-06-28
JP2020533807A (ja) 2020-11-19
US20200211844A1 (en) 2020-07-02
KR20200051657A (ko) 2020-05-13
US11107679B2 (en) 2021-08-31
WO2019053082A1 (en) 2019-03-21
TWI801418B (zh) 2023-05-11
CN111095482A (zh) 2020-05-01
TW201923824A (zh) 2019-06-16
JP7360172B2 (ja) 2023-10-12
GB201714802D0 (en) 2017-11-01
EP3682463A1 (en) 2020-07-22
GB2566477A (en) 2019-03-20

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