JP2020533807A5 - - Google Patents
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- Publication number
- JP2020533807A5 JP2020533807A5 JP2020515236A JP2020515236A JP2020533807A5 JP 2020533807 A5 JP2020533807 A5 JP 2020533807A5 JP 2020515236 A JP2020515236 A JP 2020515236A JP 2020515236 A JP2020515236 A JP 2020515236A JP 2020533807 A5 JP2020533807 A5 JP 2020533807A5
- Authority
- JP
- Japan
- Prior art keywords
- target material
- target
- radiation beam
- additional layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 18
- 239000013077 target material Substances 0.000 claims 15
- 230000005855 radiation Effects 0.000 claims 12
- 239000013078 crystal Substances 0.000 claims 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 claims 1
- 229910001195 gallium oxide Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1714802.4 | 2017-09-14 | ||
| GB1714802.4A GB2566477A (en) | 2017-09-14 | 2017-09-14 | Method of processing a target material |
| PCT/EP2018/074649 WO2019053082A1 (en) | 2017-09-14 | 2018-09-12 | METHOD OF PROCESSING TARGET MATERIAL |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020533807A JP2020533807A (ja) | 2020-11-19 |
| JP2020533807A5 true JP2020533807A5 (enExample) | 2021-09-16 |
| JP7360172B2 JP7360172B2 (ja) | 2023-10-12 |
Family
ID=60159472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020515236A Active JP7360172B2 (ja) | 2017-09-14 | 2018-09-12 | ターゲット材料を処理する方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11107679B2 (enExample) |
| EP (1) | EP3682463A1 (enExample) |
| JP (1) | JP7360172B2 (enExample) |
| KR (1) | KR102566382B1 (enExample) |
| CN (1) | CN111095482B (enExample) |
| GB (1) | GB2566477A (enExample) |
| TW (1) | TWI801418B (enExample) |
| WO (1) | WO2019053082A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7571073B2 (ja) * | 2022-03-24 | 2024-10-22 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、プログラム、及び基板処理装置 |
| CN116532808A (zh) * | 2023-05-17 | 2023-08-04 | 泰兰特激光技术(武汉)有限公司 | 一种局域改变无机非金属材料表面载流子浓度的方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI316736B (en) * | 2003-05-02 | 2009-11-01 | Au Optronics Corp | Method of fabricating polysilicon film by excimer laser crystallization process |
| JP4769491B2 (ja) * | 2004-06-04 | 2011-09-07 | 株式会社 液晶先端技術開発センター | 結晶化方法、薄膜トランジスタの製造方法、薄膜トランジスタおよび表示装置 |
| KR100646937B1 (ko) * | 2005-08-22 | 2006-11-23 | 삼성에스디아이 주식회사 | 다결정 실리콘 박막트랜지스터 및 그 제조방법 |
| TW200713460A (en) * | 2005-09-22 | 2007-04-01 | Adv Lcd Tech Dev Ct Co Ltd | Phase modulation device, phase modulation device fabrication method, crystallization apparatus, and crystallization method |
| TWI280292B (en) * | 2005-12-12 | 2007-05-01 | Ind Tech Res Inst | Method of fabricating a poly-silicon thin film |
| KR101375834B1 (ko) * | 2007-11-20 | 2014-03-18 | 삼성전자주식회사 | 다결정 실리콘 박막 및 이를 적용하는 박막 트랜지스터의제조방법 |
| EP2212913A4 (en) * | 2007-11-21 | 2013-10-30 | Univ Columbia | SYSTEMS AND METHOD FOR PRODUCING EPITACTIC STRUCTURED THICK FILMS |
| WO2009068756A1 (fr) * | 2007-11-28 | 2009-06-04 | Commissariat A L'energie Atomique | Procede de cristallisation |
| US8569155B2 (en) * | 2008-02-29 | 2013-10-29 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
| JP5342898B2 (ja) * | 2009-02-26 | 2013-11-13 | 三菱電機株式会社 | 逆スタガ構造の薄膜トランジスタ及びその製造方法 |
| JP2011003666A (ja) * | 2009-06-17 | 2011-01-06 | Sony Corp | 照射装置および半導体素子の製造方法 |
| EP2833391A4 (en) * | 2012-03-30 | 2015-04-22 | Teijin Ltd | SEMICONDUCTOR LAMINATE AND METHOD FOR THE PRODUCTION THEREOF, METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR COMPONENT, SEMICONDUCTOR ELEMENT, DOTING COMPOSITION, DOPING INJECTION LAYER AND METHOD FOR FORMING A DOPED LAYER |
| CN104797980A (zh) * | 2012-09-20 | 2015-07-22 | 英特斯特公司 | 照射装置及照射方法 |
| JP2014090045A (ja) * | 2012-10-30 | 2014-05-15 | Sanken Electric Co Ltd | イオン導入層の活性化方法、および、半導体装置の製造方法 |
| TWI593024B (zh) * | 2015-07-24 | 2017-07-21 | 友達光電股份有限公司 | 薄膜電晶體的製造方法 |
| KR102781391B1 (ko) * | 2015-09-09 | 2025-03-17 | 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 | 작업물들을 레이저 가공하기 위한 레이저 가공 장치, 방법들 및 관련된 배열들 |
-
2017
- 2017-09-14 GB GB1714802.4A patent/GB2566477A/en not_active Withdrawn
-
2018
- 2018-09-12 EP EP18768889.0A patent/EP3682463A1/en active Pending
- 2018-09-12 WO PCT/EP2018/074649 patent/WO2019053082A1/en not_active Ceased
- 2018-09-12 KR KR1020207008416A patent/KR102566382B1/ko active Active
- 2018-09-12 JP JP2020515236A patent/JP7360172B2/ja active Active
- 2018-09-12 CN CN201880059897.1A patent/CN111095482B/zh active Active
- 2018-09-14 TW TW107132502A patent/TWI801418B/zh active
-
2020
- 2020-02-05 US US16/782,894 patent/US11107679B2/en active Active
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