JP2020526021A - 超伝導体−半導体製造 - Google Patents
超伝導体−半導体製造 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 133
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000002887 superconductor Substances 0.000 claims abstract description 122
- 239000000463 material Substances 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 230000000873 masking effect Effects 0.000 claims abstract description 5
- 239000002070 nanowire Substances 0.000 claims description 129
- 238000000034 method Methods 0.000 claims description 38
- 239000003989 dielectric material Substances 0.000 claims description 7
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 7
- 241000121629 Majorana Species 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 13
- 238000000059 patterning Methods 0.000 description 13
- 238000011065 in-situ storage Methods 0.000 description 12
- 238000013459 approach Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004871 chemical beam epitaxy Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 230000002194 synthesizing effect Effects 0.000 description 1
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Abstract
Description
しかしながら、言及しておくことには、この材料プラットフォームは量子コンピューティングに関連するものであるが、それが提供するゲート可能な超伝導エレクトロニクスは、特に低エネルギー消費が要求される状況において、量子コンピューティングには属さない又は量子コンピューティングに直接的には関係しない他の用途をも有し得るものである。
第1段階P1(マスキング段階)にて、絶縁基板104の上に、パターニングされた誘電体材料102の層(誘電体マスク)が形成される。図1の左側に、誘電体マスク102を備えた基板104の側面図及び上面図が示されている。基板104は、例えばInP(インジウム燐)などの任意の好適な基板材料で形成されることができ、記載される例では絶縁基板である。記載される例では、誘電体材料102は酸化物であるが、誘電体材料102は、この製造方法の第2段階P2(以下参照)におけるSAGを容易にする任意の誘電体材料とし得る。
第2段階P2すなわちSAG段階にて、基板104の露出部分の上で、所望の領域106内に、半導体材料108が選択的に成長される。一例を図1の右上に示しており、そこに基板104の側面図が示されている。酸化物層102のパターニングにより、選択的に成長された半導体108は、面内(インプレーン)ナノワイヤ(すなわち、基板104の面内に位置するナノワイヤ)を形成する。
第3段階P3(超伝導体成長段階)にて、粒子ビーム110を用いて超伝導材料の層112が成長される。ここでは、超伝導材料は、少なくとも特定の条件下で超伝導特性を示す材料を意味する。そのような材料の一例はアルミニウム(Al)である。以下の例において、超伝導体は段階P3でエピタキシャルに成長され、超伝導体成長段階P3は、この文脈で、エピタキシャル成長段階として参照され得る。しかしながら、この技術は、これに関して限定されるものではなく、段階P3で非エピタキシャルな超伝導体成長によって、意図した結果を達成することが可能であり得る。
ゲート可能な超伝導体ネットワークの基礎としてSAGを用いることは、望ましくは、絶縁された基板を伴い、選択的エリア成長された材料が、誘起される超伝導を担持することができる。
図6及び7は、図1の方法の拡張の一例を概略的に示しており、ここでは、その場パターニングを行うために、超伝導体成長段階P3における角度付きビーム110と共に、突出誘電体構造102Pが使用される。突出誘電体構造102Pが、角度付きビームを選択的に遮って、SU材料112の堆積が上述の種類の特定のシャドー領域で起こるのを防止するという点で、原理は、突出したSE材料108によって提供されるその場パターニングと同様である。
図11は、“[100]”SE/SUナノワイヤ及び“[110]”SE/SUナノワイヤという、特定の種類の量子回路に見出され得る2つの結晶ナノワイヤ構造を示している。ここで、[100]及び[110]はミラー指数であり、これは、この文脈において、ナノワイヤの配向自体に対するナノワイヤの結晶構造の向きを指す。理解されるように、異なるミラー指数は、SAG段階P2において異なる形状のナノワイヤの成長をもたらす。特に、ワイヤの幅を横切って断面をとるときに、SAG[100]ワイヤは基本的に三角形のプロファイルを持つのに対し、SAG[110]ワイヤは、その頂部に、より平坦な部分を持つ。これら異なるプロファイルのため、エピタキシャル成長段階P3において、粒子ビーム110の角度が、(1つ以上の)SAGナノワイヤのミラー指数に応じて好ましく選定される。[100]ナノワイヤでは、z軸に対して少なくとも45度の角度が好適であり得るのに対し、[110]ナノワイヤでは、少なくとも35度の角度が好適であり得る。
Claims (20)
- 混合半導体−超伝導体プラットフォームを製造する方法であって、
マスキング段階にて、基板上に誘電体マスクを、該誘電体マスクが前記基板の1つ以上の領域を露出させたままにするように形成し、
選択的エリア成長段階にて、前記露出させた1つ以上の領域内で前記基板上に半導体材料を選択的に成長させ、
超伝導体成長段階にて、超伝導材料の層を形成し、該層の少なくとも一部が、前記選択的に成長させた半導体材料と直に接触する、
ことを有し、
前記混合半導体−超伝導体プラットフォームは、前記選択的に成長させた半導体材料と、前記選択的に成長させた半導体材料と直に接触した前記超伝導材料とを有する、
方法。 - 前記露出させた1つ以上の領域内の前記半導体材料は、面内ナノワイヤのネットワークを形成する、請求項1に記載の方法。
- 前記超伝導体成長段階において前記超伝導材料の層はエピタキシャル成長される、請求項1又は2に記載の方法。
- 前記超伝導材料は、分子線エピタキシ(MBE)を用いてエピタキシャル成長される、請求項3に記載の方法。
- 前記超伝導体成長段階において、前記超伝導材料の層はビームを用いて形成される、請求項4に記載の方法。
- 前記ビームは、前記基板の面の法線に対して非ゼロの入射角を有する、請求項5に記載の方法。
- 前記基板の前記面の外側に突出する構造の一方側に前記ビームが入射し、それにより、前記突出する構造の他方側のシャドー領域が前記超伝導材料で覆われるのを防止するように、粒子の前記ビームが前記基板に対して角度付けられる、請求項6に記載の方法。
- 前記突出する構造は、前記半導体材料の突出部であり、前記シャドー領域が、前記半導体材料を、ゲート領域に堆積される前記超伝導材料の部分から分離する、請求項7に記載の方法。
- 前記ゲート領域から半導体材料を除去し、
前記ゲート領域内に、ゲート材料からゲートを形成する、
ことを有する請求項8に記載の方法。 - 前記突出する構造は誘電体材料で形成される、請求項7に記載の方法。
- 前記突出する構造は、前記半導体材料によって形成されるナノワイヤに隣接し、前記シャドー領域は、前記ナノワイヤの幅にわたって延在し、その結果、前記ナノワイヤの一セクションが、その全幅にわたって、前記超伝導材料によって覆われず、それにより、双方とも前記超伝導材料によって少なくとも部分的に覆われる前記ナノワイヤの2つの更なるセクションの間にジャンクションを形成する、請求項7に記載の方法。
- 前記選択的エリア成長段階及び前記超伝導体成長段階は、真空チャンバ内で、これらの段階全体を通して及びこれらの段階の間に前記基板が前記真空チャンバ内にあるまま実行される、請求項1に記載の方法。
- 選択エリア成長(SAG)半導体領域と、
超伝導領域と、
を有する量子回路。 - 前記SAG半導体領域は、導電性の面内ナノワイヤを有する、請求項13に記載の量子回路。
- 前記面内ナノワイヤは調節可能である、請求項14に記載の量子回路。
- 前記面内ナノワイヤは、サイドゲート、トップゲート、又はボトムゲートを介して調節可能である、請求項15に記載の量子回路。
- 前記超伝導領域は、前記SAG半導体領域の半導体材料と直に接触した超伝導体材料を有する、請求項13に記載の量子回路。
- 当該量子回路は、上に前記SAG半導体領域が成長された絶縁基板と、該絶縁基板上に形成された誘電体マスクとを有し、前記超伝導領域は、前記誘電体マスクによって覆われていない前記基板の1つ以上の領域上に選択的に成長された超伝導体材料で形成されている、請求項13に記載の量子回路。
- 選択エリア成長(SAG)ナノワイヤのネットワークと、
前記SAGナノワイヤ上に形成された超伝導体材料の層と、
を有し、
前記SAGナノワイヤのネットワークと前記超伝導体材料とが、量子コンピューティングを実行するのに使用されるマヨラナモードを提供するように結合されている、
トポロジカル量子コンピュータ。 - 前記マヨラナモードを操作するように構成された少なくとも1つのゲート、を有する請求項19に記載のトポロジカル量子コンピュータ。
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WO2019001753A1 (en) | 2019-01-03 |
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CN110741486B (zh) | 2024-02-23 |
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GB201718897D0 (en) | 2017-12-27 |
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WO2019099171A2 (en) | 2019-05-23 |
WO2019099171A3 (en) | 2019-10-17 |
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AU2018367378B9 (en) | 2023-05-04 |
AU2018367378A1 (en) | 2020-05-14 |
US20230247918A1 (en) | 2023-08-03 |
US20220102425A1 (en) | 2022-03-31 |
AU2018367378B2 (en) | 2023-04-06 |
US11974509B2 (en) | 2024-04-30 |
CN110741486A (zh) | 2020-01-31 |
JP7203055B2 (ja) | 2023-01-12 |
US20200027919A1 (en) | 2020-01-23 |
KR20200019247A (ko) | 2020-02-21 |
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