JP2010283206A - 超伝導体の微細パターンの作製方法 - Google Patents
超伝導体の微細パターンの作製方法 Download PDFInfo
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- JP2010283206A JP2010283206A JP2009136211A JP2009136211A JP2010283206A JP 2010283206 A JP2010283206 A JP 2010283206A JP 2009136211 A JP2009136211 A JP 2009136211A JP 2009136211 A JP2009136211 A JP 2009136211A JP 2010283206 A JP2010283206 A JP 2010283206A
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- magnesium boride
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- 239000002887 superconductor Substances 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 33
- PZKRHHZKOQZHIO-UHFFFAOYSA-N [B].[B].[Mg] Chemical compound [B].[B].[Mg] PZKRHHZKOQZHIO-UHFFFAOYSA-N 0.000 claims abstract description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 28
- 238000010894 electron beam technology Methods 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 238000007740 vapor deposition Methods 0.000 abstract description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002365 hybrid physical--chemical vapour deposition Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/5805—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides
- C04B35/58057—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on borides based on magnesium boride, e.g. MgB2
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/95—Products characterised by their size, e.g. microceramics
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Electrodes Of Semiconductors (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】結晶基板101の上に、電子線レジストからなる微細パターン102を形成する(図1(a))。次に、微細パターン102の上に、室温においてアモルファス状炭素103及びアモルファス状珪素104を蒸着する(図1(b))。その後、電子線レジストの微細パターン102をリフトオフして、炭素および珪素からなる微細パターン106を形成する(図1(c))。次に、微細パターン106を設けた基板101の上にホウ化マグネシウム105を蒸着する(図1(e))。ここで、蒸着時の基板温度は280℃であることが好ましい。最後に、ホウ化マグネシウム105が形成された基板101の超音波洗浄を行うことにより微細パターン106をリフトオフして、ホウ化マグネシウム105の微細パターンを得る(図1(f))。
【選択図】図1
Description
102 電子線レジストからなる微細パターン
103 アモルファスまたは多結晶状の炭素
104 アモルファスまたは多結晶状の珪素
105 ホウ化マグネシウム
106 炭素および珪素からなる微細パターン
107 逆テイパーの付いた微細パターン
Claims (6)
- 基板の上にホウ化マグネシウム超伝導体の微細パターンを作製する方法であって、
基板の上に、炭素および第2の材料からなる微細パターンを形成するステップと、
前記基板と前記炭素および第2の材料からなる微細パターンの上に、ホウ化マグネシウム超伝導体を基板温度200℃以上900℃以下にした状態で形成するステップと、
前記炭素および第2の材料からなる微細パターンをリフトオフして、前記ホウ化マグネシウム超伝導体の微細パターンを前記基板上に残すステップと
を含むことを特徴とする方法。 - 前記リフトオフは、有機溶媒中の超音波洗浄によって行うことを特徴とする請求項1に記載の方法。
- 前記リフトオフは、酸素プラズマ照射により前記炭素を焼失させることによってリフトオフすることを特徴とする請求項1に記載の方法。
- 前記第2の材料は、珪素、チタン、ニッケル、アルミニウム、酸化アルミニウム、および酸化ケイ素のうちのいずれかであることを特徴とする請求項1に記載の方法。
- 前記炭素および第2の材料からなる微細パターンを形成するステップは、
前記基板の上に、電子線レジストからなる微細パターンを形成するステップと、
前記基板と前記電子線レジストからなる微細パターンの上に、前記炭素の層を形成し、ついで、前記第2の材料の層を形成するステップと、
前記電子線レジストからなる微細パターンをリフトオフして、前記炭素および第2の材料からなる微細パターンを前記基板上に残すステップと
を含むことを特徴とする請求項1に記載の方法。 - 前記炭素および第2の材料からなる微細パターンを形成するステップは、前記炭素および第2の材料からなる微細パターンの前記炭素の層をエッチングして、逆テイパーを設けるステップをさらに含むことを特徴とする請求項5に記載の方法。
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JP2009136211A JP5363201B2 (ja) | 2009-06-05 | 2009-06-05 | 超伝導体の微細パターンの作製方法 |
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JP2009136211A JP5363201B2 (ja) | 2009-06-05 | 2009-06-05 | 超伝導体の微細パターンの作製方法 |
Publications (2)
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JP2010283206A true JP2010283206A (ja) | 2010-12-16 |
JP5363201B2 JP5363201B2 (ja) | 2013-12-11 |
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JP2009136211A Expired - Fee Related JP5363201B2 (ja) | 2009-06-05 | 2009-06-05 | 超伝導体の微細パターンの作製方法 |
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JP (1) | JP5363201B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012248377A (ja) * | 2011-05-27 | 2012-12-13 | Hitachi Ltd | 超電導線材の製造方法、および超電導線材 |
JP2013016664A (ja) * | 2011-07-05 | 2013-01-24 | Hitachi Ltd | 超電導スイッチ,超電導磁石、およびmri |
CN110534429A (zh) * | 2019-09-10 | 2019-12-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种超导薄膜及其制备方法 |
JP2020526021A (ja) * | 2017-06-30 | 2020-08-27 | マイクロソフト テクノロジー ライセンシング,エルエルシー | 超伝導体−半導体製造 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0837233A (ja) * | 1994-07-22 | 1996-02-06 | Rohm Co Ltd | 半導体装置の製造方法 |
JP2004534216A (ja) * | 2001-04-28 | 2004-11-11 | キネティック リミテッド | ミリ波地表撮像装置 |
JP2005286245A (ja) * | 2004-03-30 | 2005-10-13 | Japan Science & Technology Agency | 超伝導素子、それを用いた中性子検出装置及び超伝導素子の製造方法 |
JP2007088205A (ja) * | 2005-09-22 | 2007-04-05 | Tokyo Univ Of Agriculture & Technology | 金属材料層の製造方法及び電子デバイスの製造方法 |
JP2008078631A (ja) * | 2006-08-25 | 2008-04-03 | Fujifilm Corp | 無機材料膜のパターン形成方法及び構造物 |
-
2009
- 2009-06-05 JP JP2009136211A patent/JP5363201B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0837233A (ja) * | 1994-07-22 | 1996-02-06 | Rohm Co Ltd | 半導体装置の製造方法 |
JP2004534216A (ja) * | 2001-04-28 | 2004-11-11 | キネティック リミテッド | ミリ波地表撮像装置 |
JP2005286245A (ja) * | 2004-03-30 | 2005-10-13 | Japan Science & Technology Agency | 超伝導素子、それを用いた中性子検出装置及び超伝導素子の製造方法 |
JP2007088205A (ja) * | 2005-09-22 | 2007-04-05 | Tokyo Univ Of Agriculture & Technology | 金属材料層の製造方法及び電子デバイスの製造方法 |
JP2008078631A (ja) * | 2006-08-25 | 2008-04-03 | Fujifilm Corp | 無機材料膜のパターン形成方法及び構造物 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012248377A (ja) * | 2011-05-27 | 2012-12-13 | Hitachi Ltd | 超電導線材の製造方法、および超電導線材 |
JP2013016664A (ja) * | 2011-07-05 | 2013-01-24 | Hitachi Ltd | 超電導スイッチ,超電導磁石、およびmri |
JP2020526021A (ja) * | 2017-06-30 | 2020-08-27 | マイクロソフト テクノロジー ライセンシング,エルエルシー | 超伝導体−半導体製造 |
JP7203055B2 (ja) | 2017-06-30 | 2023-01-12 | マイクロソフト テクノロジー ライセンシング,エルエルシー | 超伝導体-半導体製造 |
US11711986B2 (en) | 2017-06-30 | 2023-07-25 | Microsoft Technology Licensing Llc | Superconductor-semiconductor fabrication |
US11296145B2 (en) | 2017-11-15 | 2022-04-05 | Microsoft Technology Licensing, Llc | Fabrication methods |
CN110534429A (zh) * | 2019-09-10 | 2019-12-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种超导薄膜及其制备方法 |
CN110534429B (zh) * | 2019-09-10 | 2022-06-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种超导薄膜及其制备方法 |
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