DK4029059T3 - Fremstillingsfremgangsmåde - Google Patents
Fremstillingsfremgangsmåde Download PDFInfo
- Publication number
- DK4029059T3 DK4029059T3 DK19769096.9T DK19769096T DK4029059T3 DK 4029059 T3 DK4029059 T3 DK 4029059T3 DK 19769096 T DK19769096 T DK 19769096T DK 4029059 T3 DK4029059 T3 DK 4029059T3
- Authority
- DK
- Denmark
- Prior art keywords
- manufacturing process
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Artificial Intelligence (AREA)
- Mathematical Analysis (AREA)
- Pure & Applied Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Mathematical Optimization (AREA)
- Evolutionary Computation (AREA)
- Data Mining & Analysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computational Mathematics (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2019/074049 WO2021047754A1 (en) | 2019-09-10 | 2019-09-10 | Fabrication method |
Publications (1)
Publication Number | Publication Date |
---|---|
DK4029059T3 true DK4029059T3 (da) | 2023-11-27 |
Family
ID=67956749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK19769096.9T DK4029059T3 (da) | 2019-09-10 | 2019-09-10 | Fremstillingsfremgangsmåde |
Country Status (5)
Country | Link |
---|---|
US (1) | US20240107897A1 (da) |
EP (1) | EP4029059B1 (da) |
CN (1) | CN114365290A (da) |
DK (1) | DK4029059T3 (da) |
WO (1) | WO2021047754A1 (da) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023079561A1 (en) * | 2021-11-07 | 2023-05-11 | Yeda Research And Development Co. Ltd. | Tapered nanowire device for quantum computing |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8030108B1 (en) * | 2008-06-30 | 2011-10-04 | Stc.Unm | Epitaxial growth of in-plane nanowires and nanowire devices |
WO2016207415A1 (en) * | 2015-06-26 | 2016-12-29 | University Of Copenhagen | Network of nanostructures as grown on a substrate |
GB201718897D0 (en) * | 2017-11-15 | 2017-12-27 | Microsoft Technology Licensing Llc | Superconductor-semiconductor fabrication |
US11707000B2 (en) * | 2017-10-15 | 2023-07-18 | Microsoft Technology Licensing, Llc | Side-gating in selective-area-grown topological qubits |
-
2019
- 2019-09-10 DK DK19769096.9T patent/DK4029059T3/da active
- 2019-09-10 WO PCT/EP2019/074049 patent/WO2021047754A1/en active Application Filing
- 2019-09-10 US US17/753,581 patent/US20240107897A1/en active Pending
- 2019-09-10 EP EP19769096.9A patent/EP4029059B1/en active Active
- 2019-09-10 CN CN201980100172.7A patent/CN114365290A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN114365290A (zh) | 2022-04-15 |
EP4029059B1 (en) | 2023-10-25 |
US20240107897A1 (en) | 2024-03-28 |
EP4029059A1 (en) | 2022-07-20 |
WO2021047754A1 (en) | 2021-03-18 |
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