JP2020524839A5 - - Google Patents

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Publication number
JP2020524839A5
JP2020524839A5 JP2019566261A JP2019566261A JP2020524839A5 JP 2020524839 A5 JP2020524839 A5 JP 2020524839A5 JP 2019566261 A JP2019566261 A JP 2019566261A JP 2019566261 A JP2019566261 A JP 2019566261A JP 2020524839 A5 JP2020524839 A5 JP 2020524839A5
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JP
Japan
Prior art keywords
chip
nand flash
future
writing
write
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JP2019566261A
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English (en)
Japanese (ja)
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JP7234144B2 (ja
JP2020524839A (ja
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Priority claimed from US15/816,447 external-priority patent/US10606484B2/en
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Publication of JP2020524839A5 publication Critical patent/JP2020524839A5/ja
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Publication of JP7234144B2 publication Critical patent/JP7234144B2/ja
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JP2019566261A 2017-06-23 2018-03-15 Nandバッファを有するnandフラッシュストレージデバイス Active JP7234144B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762524016P 2017-06-23 2017-06-23
US62/524,016 2017-06-23
US15/816,447 US10606484B2 (en) 2017-06-23 2017-11-17 NAND flash storage device with NAND buffer
US15/816,447 2017-11-17
PCT/US2018/022683 WO2018236440A1 (en) 2017-06-23 2018-03-15 Nand flash storage device with nand buffer

Publications (3)

Publication Number Publication Date
JP2020524839A JP2020524839A (ja) 2020-08-20
JP2020524839A5 true JP2020524839A5 (https=) 2020-10-01
JP7234144B2 JP7234144B2 (ja) 2023-03-07

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JP2019566261A Active JP7234144B2 (ja) 2017-06-23 2018-03-15 Nandバッファを有するnandフラッシュストレージデバイス

Country Status (9)

Country Link
US (1) US10606484B2 (https=)
EP (1) EP3418897B1 (https=)
JP (1) JP7234144B2 (https=)
KR (1) KR102276350B1 (https=)
CN (1) CN109117085B (https=)
DE (2) DE102018109929A1 (https=)
GB (1) GB2563713B (https=)
TW (1) TWI727160B (https=)
WO (1) WO2018236440A1 (https=)

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US10481834B2 (en) * 2018-01-24 2019-11-19 Samsung Electronics Co., Ltd. Erasure code data protection across multiple NVME over fabrics storage devices
US11048430B2 (en) 2019-04-12 2021-06-29 Netapp, Inc. Object store mirroring where during resync of two storage bucket, objects are transmitted to each of the two storage bucket
KR102743222B1 (ko) 2019-06-12 2024-12-17 삼성전자 주식회사 전자 장치 및 그의 저장 공간 이용 방법
JP2021043908A (ja) * 2019-09-13 2021-03-18 キオクシア株式会社 メモリシステムおよび制御方法
US11269779B2 (en) 2020-05-27 2022-03-08 Microsoft Technology Licensing, Llc Memory system with a predictable read latency from media with a long write latency
CN118093449A (zh) * 2022-11-25 2024-05-28 长江存储科技有限责任公司 一种存储器系统及其垃圾回收方法、电子设备
FR3150883B1 (fr) * 2023-07-07 2025-10-17 St Microelectronics Int Nv Configuration d’une mémoire
CN120877821A (zh) * 2024-04-29 2025-10-31 长江存储科技有限责任公司 一种存储器装置及其操作方法、存储器系统

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US5930167A (en) 1997-07-30 1999-07-27 Sandisk Corporation Multi-state non-volatile flash memory capable of being its own two state write cache
US20110258362A1 (en) * 2008-12-19 2011-10-20 Mclaren Moray Redundant data storage for uniform read latency
US8380909B2 (en) * 2009-04-08 2013-02-19 Google Inc. Multiple command queues having separate interrupts
US8285946B2 (en) * 2009-12-15 2012-10-09 International Business Machines Corporation Reducing access contention in flash-based memory systems
US9417821B2 (en) 2011-09-30 2016-08-16 Intel Corporation Presentation of direct accessed storage under a logical drive model
CN106021147B (zh) * 2011-09-30 2020-04-28 英特尔公司 在逻辑驱动器模型下呈现直接存取的存储设备
JP2013109404A (ja) 2011-11-17 2013-06-06 Toshiba Corp 情報処理装置
US8301832B1 (en) 2012-03-23 2012-10-30 DSSD, Inc. Storage system with guaranteed read latency
KR102039537B1 (ko) * 2013-03-15 2019-11-01 삼성전자주식회사 불휘발성 저장 장치 및 그것의 운영체제 이미지 프로그램 방법
US20140304452A1 (en) 2013-04-03 2014-10-09 Violin Memory Inc. Method for increasing storage media performance
US9213634B2 (en) * 2013-11-22 2015-12-15 Apple Inc. Efficient reuse of segments in nonoverwrite storage systems
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US10318175B2 (en) * 2017-03-07 2019-06-11 Samsung Electronics Co., Ltd. SSD with heterogeneous NVM types

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