JP2020524791A - 電磁放射の高速検出器 - Google Patents
電磁放射の高速検出器 Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
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- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
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Abstract
Description
V(t)∝sin(2α)・(S‖−S⊥)・ΔT(t)
ここで、αは基板平面の法線方向に対する活性層2の粒子傾斜角度、S‖は活性層2の傾いた粒子の基板表面10上への投射と平行な方向のゼーベック係数、S⊥は基板表面10に垂直な方向のゼーベック係数、ΔTは膜の横断方向の温度勾配である。
2 配向多結晶層
3 バッファ層
4 パッシベーション層
6 第1電極
7 第2電極
8 吸収層
10 上面
100 ストリップ
101〜10n ストリップ
201〜20n ストリップ
301〜30n ストリップ
RL 電磁放射
S1 第1端部
S2 第2端部
Claims (18)
- 基板(1)と、
前記基板の上面(10)に堆積された熱電材料の配向多結晶層(2)と、
互いに離間し、前記配向多結晶層と電気的に接触している第1電極(6)及び第2電極(7)と
を備えた電磁放射(RL)の検出器において、
前記基板が、少なくとも1つのセラミック層を備え、前記配向多結晶層が、前記基板の前記上面の法線に対して、30度から55度の間に含まれる角度の結晶方位を有することを特徴とする検出器。 - 前記基板がセラミック層であることを特徴とする、請求項1に記載の検出器。
- 前記基板が、セラミック層によって事前に電気的に不動態化された金属層を備えることを特徴とする、請求項1に記載の検出器。
- 前記基板が、前記多結晶層の結晶方位とは異なる結晶方位を有することを特徴とする、請求項1に記載の検出器。
- 前記第1電極と前記第2電極との間に延在する前記配向多結晶層によって形成された、少なくとも1つのストリップ(100)を備えることを特徴とする、請求項1〜4のいずれか一項に記載の検出器。
- 複数のストリップ(100)を備え、
各ストリップが前記配向多結晶層によって形成され、
前記複数のストリップの各ストリップが互いに離間して互いに平行に配置され、前記複数のストリップが前記第1電極と前記第2電極との間に延在する
ことを特徴とする、請求項5に記載の検出器。 - 複数のストリップ(101...10n−1,10n)を備え、
各ストリップが前記配向多結晶層によって形成され、
前記複数のストリップの各ストリップが互いに離間して互いに平行に配置され、前記複数のストリップの各ストリップが、第1ストリップ(101)からn番目のストリップ(10n)まで連続して配置され、前記複数のストリップの各ストリップが第1端部(S1)及び第2端部(S2)を有し、前記第1電極(6)が、前記複数のストリップの前記第1ストリップ(101)の第1端部(S1)に接続され、前記第2電極(7)が、前記複数のストリップの前記n番目のストリップ(10n)の前記第2端部(S2)に接続され、前記複数のストリップの各ストリップの前記第2端部が、前記複数のストリップの次のストリップの前記第1端部に電気的に接触している
ことを特徴とする、請求項1〜4のいずれか一項に記載の検出器。 - 複数のストリップ(201,301...20n,30n)を備え、
各ストリップが前記配向多結晶層によって形成され、
前記隣接するストリップ(201,301;202,302...20n,30n)の前記配向多結晶層が、反対の粒子配向を有し、
前記複数のストリップの各ストリップが互いに離間して互いに平行に配置され、前記複数のストリップの各ストリップが、第1ストリップ(201)からn番目のストリップ(30n)まで連続して配置され、前記複数のストリップの各ストリップが第1端部(S1)及び第2端部(S2)を有し、前記第1電極(6)が、前記複数のストリップの前記第1ストリップ(201)の第1端部(S1)に接続され、前記第2電極が、前記複数のストリップの前記n番目のストリップ(30n)の前記第2端部に接続され、前記複数のストリップの各ストリップの前記第2端部が、前記複数のストリップの次のストリップの前記第1端部に電気的に接触している
ことを特徴とする、請求項1〜4のいずれか一項に記載の検出器。 - 前記基板の前記上面が、2μm未満の粗さを示すことを特徴とする、請求項1〜8のいずれか一項に記載の検出器。
- 前記配向多結晶層に重なるパッシベーション層(4)を備えることを特徴とする、請求項1〜9のいずれか一項に記載の検出器。
- 前記配向多結晶層と前記パッシベーション層との間に配置されたバッファ層(3)を備えることを特徴とする、請求項10に記載の検出器。
- 前記パッシベーション層の上に配置された吸収層(8)を備えることを特徴とする、請求項10に記載の検出器。
- 前記基板の前記上面に、隣接する複数のV字型溝を前記配向多結晶層の傾斜粒子の投射と同じ方向に形成するテクスチャ加工がされていることを特徴とする、請求項1〜12のいずれか一項に記載の検出器。
- 前記基板の前記少なくとも1つのセラミック層が、焼結された窒化アルミニウム(AlN)、窒化ケイ素(Si3N4)、炭化ケイ素(SiC)、窒化ホウ素(BN)、炭化ホウ素(B4C)、アルミナ(Al2O3)、及び酸化ベリリウム(BeO)を含む材料の群から選択された材料によって形成されていることを特徴とする、請求項1〜13のいずれか一項に記載の検出器。
- 前記配向多結晶層が、ビスマス(Bi)、テルル化ビスマス(Bi2Te3)、アルミニウムドープ酸化亜鉛(Al:ZnO)、及びアンチモン(Sb)を含む材料の群から選択された材料によって形成されていることを特徴とする、請求項1〜14のいずれか一項に記載の検出器。
- 前記基板が焼結セラミック層であることを特徴とする、請求項1に記載の検出器。
- 前記多結晶層(2)が、斜め蒸着法(GLAD)によって堆積されていることを特徴とする、請求項1に記載の検出器。
- 前記第1電極(6)及び前記第2電極(7)が、熱電材料の前記配向多結晶層(2)と同じ材料で作成されていることを特徴とする、請求項1に記載の検出器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT102017000070601 | 2017-06-23 | ||
IT102017000070601A IT201700070601A1 (it) | 2017-06-23 | 2017-06-23 | Rilevatore veloce di radiazione elettromagnetica. |
PCT/EP2018/066474 WO2018234406A2 (en) | 2017-06-23 | 2018-06-20 | FAST DETECTOR OF ELECTROMAGNETIC RADIATION |
Publications (2)
Publication Number | Publication Date |
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JP2020524791A true JP2020524791A (ja) | 2020-08-20 |
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WO2018234406A2 (en) | 2018-12-27 |
EP3642574A2 (en) | 2020-04-29 |
EP3642574B1 (en) | 2023-02-15 |
CN110770549A (zh) | 2020-02-07 |
IT201700070601A1 (it) | 2018-12-23 |
EP3642574B8 (en) | 2023-03-08 |
CN110770549B (zh) | 2023-04-14 |
KR20200018692A (ko) | 2020-02-19 |
JP7249963B2 (ja) | 2023-03-31 |
KR102632141B1 (ko) | 2024-01-31 |
LT3642574T (lt) | 2023-05-10 |
WO2018234406A3 (en) | 2019-02-21 |
CA3066538A1 (en) | 2018-12-27 |
ES2941513T3 (es) | 2023-05-23 |
US11067434B2 (en) | 2021-07-20 |
US20210156737A1 (en) | 2021-05-27 |
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