JP2020523739A5 - - Google Patents
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- JP2020523739A5 JP2020523739A5 JP2019567599A JP2019567599A JP2020523739A5 JP 2020523739 A5 JP2020523739 A5 JP 2020523739A5 JP 2019567599 A JP2019567599 A JP 2019567599A JP 2019567599 A JP2019567599 A JP 2019567599A JP 2020523739 A5 JP2020523739 A5 JP 2020523739A5
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- Japan
- Prior art keywords
- frequency
- processing system
- substrate processing
- duty cycle
- amplitude
- Prior art date
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/617,366 | 2017-06-08 | ||
| US15/617,366 US10734195B2 (en) | 2017-06-08 | 2017-06-08 | Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching |
| PCT/US2018/035026 WO2018226468A1 (en) | 2017-06-08 | 2018-05-30 | Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020523739A JP2020523739A (ja) | 2020-08-06 |
| JP2020523739A5 true JP2020523739A5 (enExample) | 2023-03-14 |
| JP7536451B2 JP7536451B2 (ja) | 2024-08-20 |
Family
ID=64563707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019567599A Active JP7536451B2 (ja) | 2017-06-08 | 2018-05-30 | トランス結合容量性同調切り替えを用いたトランス結合プラズマパルス化のためのシステムおよび方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10734195B2 (enExample) |
| JP (1) | JP7536451B2 (enExample) |
| KR (1) | KR102621966B1 (enExample) |
| CN (1) | CN110709961B (enExample) |
| TW (1) | TWI787276B (enExample) |
| WO (1) | WO2018226468A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6976279B2 (ja) * | 2019-03-25 | 2021-12-08 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
| US11114279B2 (en) | 2019-06-28 | 2021-09-07 | COMET Technologies USA, Inc. | Arc suppression device for plasma processing equipment |
| CN112509899B (zh) * | 2019-09-16 | 2024-02-09 | 中微半导体设备(上海)股份有限公司 | 电感耦合等离子体处理装置及其点火控制方法 |
| TWI899187B (zh) * | 2020-03-19 | 2025-10-01 | 美商蘭姆研究公司 | 基板處理系統 |
| CN115917703A (zh) * | 2020-06-12 | 2023-04-04 | 朗姆研究公司 | 用于离子损坏减轻和蚀刻均匀度改善的脉冲化远程等离子体 |
| JP2023530125A (ja) * | 2020-06-15 | 2023-07-13 | ラム リサーチ コーポレーション | Ｒｆ信号のパラメータのパルス化周波数およびデューティサイクルの制御 |
| CN112016676B (zh) * | 2020-08-18 | 2021-07-02 | 武汉大学 | 一种神经网络模型预测的半导体薄膜工艺参数优化系统 |
| KR102852822B1 (ko) * | 2021-05-20 | 2025-09-02 | 인투코어테크놀로지 주식회사 | 반도체 공정에서 바이어스 전원을 제공하는 주파수 발생 장치 |
| US11923175B2 (en) * | 2021-07-28 | 2024-03-05 | COMET Technologies USA, Inc. | Systems and methods for variable gain tuning of matching networks |
| US11715624B2 (en) * | 2021-08-09 | 2023-08-01 | Mks Instruments, Inc. | Adaptive pulse shaping with post match sensor |
| US11621587B1 (en) | 2022-07-18 | 2023-04-04 | Caps Medical Ltd. | Configurable plasma generating system |
| CN119816331A (zh) * | 2022-07-18 | 2025-04-11 | 卡普斯医疗有限公司 | 可配置的等离子体生成系统 |
| US12389521B2 (en) | 2022-07-18 | 2025-08-12 | Caps Medical Ltd. | Plasma generating system |
| US20250006478A1 (en) * | 2023-06-28 | 2025-01-02 | Mks Instruments, Inc. | Pulse-Shaping Using A Sub-Region Tuning Apparatus And Method |
| US20250285840A1 (en) * | 2024-03-05 | 2025-09-11 | Applied Materials, Inc. | Rf power splitting and control |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6351683B1 (en) * | 1997-09-17 | 2002-02-26 | Tokyo Electron Limited | System and method for monitoring and controlling gas plasma processes |
| JP3310608B2 (ja) * | 1998-01-22 | 2002-08-05 | アプライド マテリアルズ インコーポレイテッド | スパッタリング装置 |
| EP1269512B1 (en) * | 2000-03-31 | 2007-10-03 | Lam Research Corporation | Inductively coupled plasma etching apparatus with active control of RF peak-to-peak voltage |
| US6818562B2 (en) * | 2002-04-19 | 2004-11-16 | Applied Materials Inc | Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system |
| CA2529794A1 (en) * | 2003-06-19 | 2004-12-29 | Plasma Control Systems Llc | Plasma production device and method and rf driver circuit with adjustable duty cycle |
| US7666464B2 (en) * | 2004-10-23 | 2010-02-23 | Applied Materials, Inc. | RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor |
| US20080179948A1 (en) | 2005-10-31 | 2008-07-31 | Mks Instruments, Inc. | Radio frequency power delivery system |
| JP2009539270A (ja) * | 2006-05-31 | 2009-11-12 | ティーガル コーポレイション | 半導体加工のためのシステム及び方法 |
| US8337661B2 (en) * | 2008-05-29 | 2012-12-25 | Applied Materials, Inc. | Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator |
| JP2010238881A (ja) | 2009-03-31 | 2010-10-21 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
| JP5632626B2 (ja) * | 2010-03-04 | 2014-11-26 | 東京エレクトロン株式会社 | 自動整合装置及びプラズマ処理装置 |
| US20120000888A1 (en) | 2010-06-30 | 2012-01-05 | Applied Materials, Inc. | Methods and apparatus for radio frequency (rf) plasma processing |
| US20120000887A1 (en) * | 2010-06-30 | 2012-01-05 | Kabushiki Kaisha Toshiba | Plasma treatment apparatus and plasma treatment method |
| US9293353B2 (en) | 2011-04-28 | 2016-03-22 | Lam Research Corporation | Faraday shield having plasma density decoupling structure between TCP coil zones |
| US9059678B2 (en) * | 2011-04-28 | 2015-06-16 | Lam Research Corporation | TCCT match circuit for plasma etch chambers |
| US9966236B2 (en) * | 2011-06-15 | 2018-05-08 | Lam Research Corporation | Powered grid for plasma chamber |
| US8692467B2 (en) | 2011-07-06 | 2014-04-08 | Lam Research Corporation | Synchronized and shortened master-slave RF pulsing in a plasma processing chamber |
| US20130119018A1 (en) * | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
| US9502216B2 (en) * | 2013-01-31 | 2016-11-22 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
| US9337000B2 (en) * | 2013-10-01 | 2016-05-10 | Lam Research Corporation | Control of impedance of RF return path |
| TWI647735B (zh) * | 2013-03-15 | 2019-01-11 | Lam Research Corporation | 使用模型化以建立與電漿系統相關的離子能量 |
| US9053908B2 (en) * | 2013-09-19 | 2015-06-09 | Lam Research Corporation | Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching |
| JP6424024B2 (ja) | 2014-06-24 | 2018-11-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
| KR101677748B1 (ko) | 2014-10-29 | 2016-11-29 | 삼성전자 주식회사 | 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법 |
| US10332725B2 (en) | 2015-03-30 | 2019-06-25 | Lam Research Corporation | Systems and methods for reversing RF current polarity at one output of a multiple output RF matching network |
| US9761459B2 (en) | 2015-08-05 | 2017-09-12 | Lam Research Corporation | Systems and methods for reverse pulsing |
| US9515633B1 (en) | 2016-01-11 | 2016-12-06 | Lam Research Corporation | Transformer coupled capacitive tuning circuit with fast impedance switching for plasma etch chambers |
-
2017
- 2017-06-08 US US15/617,366 patent/US10734195B2/en active Active
-
2018
- 2018-05-30 WO PCT/US2018/035026 patent/WO2018226468A1/en not_active Ceased
- 2018-05-30 CN CN201880038055.8A patent/CN110709961B/zh active Active
- 2018-05-30 JP JP2019567599A patent/JP7536451B2/ja active Active
- 2018-05-30 KR KR1020207000501A patent/KR102621966B1/ko active Active
- 2018-06-04 TW TW107119094A patent/TWI787276B/zh active
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