JP2020522124A5 - - Google Patents

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JP2020522124A5
JP2020522124A5 JP2019563050A JP2019563050A JP2020522124A5 JP 2020522124 A5 JP2020522124 A5 JP 2020522124A5 JP 2019563050 A JP2019563050 A JP 2019563050A JP 2019563050 A JP2019563050 A JP 2019563050A JP 2020522124 A5 JP2020522124 A5 JP 2020522124A5
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Japan
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phase shift
intensity value
target
intensity
incident beam
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JP2019563050A
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English (en)
Japanese (ja)
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JP2020522124A (ja
JP7169299B2 (ja
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Priority claimed from US15/882,951 external-priority patent/US11131629B2/en
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Publication of JP2020522124A5 publication Critical patent/JP2020522124A5/ja
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JP2019563050A 2017-05-26 2018-05-25 層を介し光の位相及び振幅を計測する装置及び方法 Active JP7169299B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762511444P 2017-05-26 2017-05-26
US62/511,444 2017-05-26
US15/882,951 US11131629B2 (en) 2017-05-26 2018-01-29 Apparatus and methods for measuring phase and amplitude of light through a layer
US15/882,951 2018-01-29
PCT/US2018/034521 WO2018218092A1 (en) 2017-05-26 2018-05-25 Apparatus and methods for measuring phase and amplitude of light through a layer

Publications (3)

Publication Number Publication Date
JP2020522124A JP2020522124A (ja) 2020-07-27
JP2020522124A5 true JP2020522124A5 (cg-RX-API-DMAC7.html) 2021-07-26
JP7169299B2 JP7169299B2 (ja) 2022-11-10

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JP2019563050A Active JP7169299B2 (ja) 2017-05-26 2018-05-25 層を介し光の位相及び振幅を計測する装置及び方法

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US (1) US11131629B2 (cg-RX-API-DMAC7.html)
EP (1) EP3593209A4 (cg-RX-API-DMAC7.html)
JP (1) JP7169299B2 (cg-RX-API-DMAC7.html)
KR (1) KR102622710B1 (cg-RX-API-DMAC7.html)
TW (1) TWI803496B (cg-RX-API-DMAC7.html)
WO (1) WO2018218092A1 (cg-RX-API-DMAC7.html)

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DE102019215972A1 (de) * 2019-10-17 2021-04-22 Carl Zeiss Smt Gmbh Verfahren zur Messung einer Reflektivität eines Objekts für Messlicht sowie Metrologiesystem zur Durchführung des Verfahrens
CN111356897B (zh) 2020-02-24 2021-02-19 长江存储科技有限责任公司 用于半导体芯片表面形貌计量的系统和方法
CN111356896B (zh) 2020-02-24 2021-01-12 长江存储科技有限责任公司 用于半导体芯片表面形貌计量的系统和方法
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WO2021168612A1 (en) 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
US11828705B2 (en) * 2022-03-31 2023-11-28 Sparrow Detect, Inc. Apparatus and method for spectroscopically detecting a sample

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