JP2020502827A - Memsマイクロホン - Google Patents
Memsマイクロホン Download PDFInfo
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- JP2020502827A JP2020502827A JP2018502717A JP2018502717A JP2020502827A JP 2020502827 A JP2020502827 A JP 2020502827A JP 2018502717 A JP2018502717 A JP 2018502717A JP 2018502717 A JP2018502717 A JP 2018502717A JP 2020502827 A JP2020502827 A JP 2020502827A
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- back electrode
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- 230000000149 penetrating effect Effects 0.000 claims abstract description 7
- 239000003990 capacitor Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 3
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- HRYZWHHZPQKTII-UHFFFAOYSA-N chloroethane Chemical compound CCCl HRYZWHHZPQKTII-UHFFFAOYSA-N 0.000 claims description 3
- 229960003750 ethyl chloride Drugs 0.000 claims description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 3
- 239000001282 iso-butane Substances 0.000 claims description 3
- 239000001294 propane Substances 0.000 claims description 3
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 claims description 3
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 3
- -1 H 2 Chemical compound 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 18
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R7/00—Diaphragms for electromechanical transducers; Cones
- H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
- H04R1/04—Structural association of microphone with electric circuitry therefor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
- H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only
- H04R1/28—Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Health & Medical Sciences (AREA)
- Otolaryngology (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
Abstract
Description
Claims (15)
- MEMSマイクロホンにおいて、
基板と、
第1の振動板と、
第2の振動板と、
前記第1の振動板と前記第2の振動板との間に形成される密封室と、
前記密封室内に位置し且つ前記第1の振動板及び前記第2の振動板とコンデンサ構造を構成する背極ユニットと、
前記背極ユニットの両側を貫通する複数の貫通孔と、を含み、
前記密封室内に粘性係数が空気より小さい気体が充填されていることを特徴とするMEMSマイクロホン。 - 前記気体は、イソブタン、プロパン、プロピレン、H2、エタン、アンモニア、アセチレン、クロロエタン、エチレン、CH3Cl、メタン、SO2、H2S、塩素ガス、CO2、N2O、N2のうちの少なくとも1種であることを特徴とする請求項1に記載のMEMSマイクロホン。
- 前記密封室は外部環境の圧力と一致することを特徴とする請求項1または請求項2に記載のMEMSマイクロホン。
- 前記密封室の圧力は標準気圧であることを特徴とする請求項1〜3のいずれか1項に記載のMEMSマイクロホン。
- 前記密封室と外部環境の圧力差は0.5atm未満であることを特徴とする請求項1または請求項2または請求項4に記載のMEMSマイクロホン。
- 前記密封室と外部環境の圧力差は0.1atm未満であることを特徴とする請求項5に記載のMEMSマイクロホン。
- 前記第1の振動板及び前記第2の振動板それぞれの前記背極ユニットとの間の隙間は0.5〜3μmであることを特徴とする請求項1〜6のいずれか1項に記載のMEMSマイクロホン。
- 前記第1の振動板と前記第2の振動板の間に支持柱がさらに設置され、
前記支持柱は前記背極ユニットにおける前記貫通孔を貫通し且つその両端のそれぞれが前記第1の振動板及び前記第2の振動板に接続されることを特徴とする請求項1〜7のいずれか1項に記載のMEMSマイクロホン。 - 前記支持柱の材料は前記第1の振動板および/または前記第2の振動板の材料と同じであることを特徴とする請求項8に記載のMEMSマイクロホン。
- 前記支持柱は絶縁材料で形成されることを特徴とする請求項8に記載のMEMSマイクロホン。
- 前記背極ユニットは背極板であり、前記背極板と前記第1の振動板及び第2の振動板それぞれとでコンデンサ構造を構成することを特徴とする請求項1〜10のいずれか1項に記載のMEMSマイクロホン。
- 前記背極ユニットは、前記第1の振動板とコンデンサ構造を構成するための第1の背極板、および前記第2の振動板とコンデンサ構造を構成するための第2の背極板を含み、前記第1の背極板と前記第2の背極板の間に絶縁層が設置されていることを特徴とする請求項1〜10のいずれか1項に記載のMEMSマイクロホン。
- 前記密封室は、常温および常圧環境で密封されることを特徴とする請求項1〜12のいずれか1項に記載のMEMSマイクロホン。
- 前記第1の振動板及び前記第2の振動板を貫通する放圧孔をさらに含み、
前記放圧孔の孔壁と前記第1の振動板及び前記第2の振動板とが前記密封室を囲んで形成することを特徴とする請求項1〜13のいずれか1項に記載のMEMSマイクロホン。 - 前記放圧孔は1つ設置されており、前記第1の振動板及び前記第2の振動板の中部位置に位置する、または、前記放圧孔は複数設置されていることを特徴とする請求項14に記載のMEMSマイクロホン。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711192077.3A CN107835477B (zh) | 2017-11-24 | 2017-11-24 | 一种mems麦克风 |
CN201711192077.3 | 2017-11-24 | ||
PCT/CN2017/113952 WO2019100432A1 (zh) | 2017-11-24 | 2017-11-30 | 一种mems麦克风 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020502827A true JP2020502827A (ja) | 2020-01-23 |
JP6703089B2 JP6703089B2 (ja) | 2020-06-03 |
Family
ID=61652602
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018502717A Active JP6703089B2 (ja) | 2017-11-24 | 2017-11-30 | Memsマイクロホン |
Country Status (6)
Country | Link |
---|---|
US (1) | US20200204925A1 (ja) |
EP (1) | EP3518558B1 (ja) |
JP (1) | JP6703089B2 (ja) |
KR (1) | KR102128668B1 (ja) |
CN (1) | CN107835477B (ja) |
WO (1) | WO2019100432A1 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108584863A (zh) * | 2018-04-20 | 2018-09-28 | 杭州士兰集成电路有限公司 | Mems器件及其制造方法 |
CN108419190B (zh) * | 2018-05-22 | 2024-03-08 | 上饶市经纬自动化科技有限公司 | 一种防御声学攻击的mems惯性传感器及其制作方法 |
US10771891B2 (en) * | 2018-08-19 | 2020-09-08 | xMEMS Labs, Inc. | Method for manufacturing air pulse generating element |
US11051109B2 (en) | 2018-09-27 | 2021-06-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual back-plate and diaphragm microphone |
DE112019005007T5 (de) * | 2018-10-05 | 2021-07-15 | Knowles Electronics, Llc | Akustikwandler mit einer Niederdruckzone und Membranen, die eine erhöhte Nachgiebigkeit aufweisen |
DE112019004979T5 (de) | 2018-10-05 | 2021-06-17 | Knowles Electronics, Llc | Verfahren zur Herstellung von MEMS-Membranen, die Wellungen umfassen |
US11206494B2 (en) | 2018-10-05 | 2021-12-21 | Knowles Electronics, Llc | Microphone device with ingress protection |
CN109246566B (zh) * | 2018-10-09 | 2020-05-12 | 歌尔股份有限公司 | Mems传感器 |
CN109714690A (zh) * | 2018-12-31 | 2019-05-03 | 瑞声声学科技(深圳)有限公司 | Mems麦克风 |
CN110012410A (zh) * | 2018-12-31 | 2019-07-12 | 瑞声科技(新加坡)有限公司 | Mems麦克风制造方法 |
CN209897224U (zh) | 2018-12-31 | 2020-01-03 | 瑞声科技(新加坡)有限公司 | 一种mems麦克风 |
CN109831730B (zh) * | 2018-12-31 | 2021-07-09 | 瑞声科技(新加坡)有限公司 | Mems麦克风制造方法 |
CN209897223U (zh) * | 2018-12-31 | 2020-01-03 | 瑞声科技(新加坡)有限公司 | Mems麦克风 |
CN110572762B (zh) * | 2019-09-29 | 2020-11-24 | 潍坊歌尔微电子有限公司 | 一种mems芯片以及电子设备 |
CN110708649B (zh) * | 2019-09-29 | 2020-12-18 | 潍坊歌尔微电子有限公司 | 一种mems芯片以及电子设备 |
CN211792034U (zh) * | 2019-12-27 | 2020-10-27 | 歌尔微电子有限公司 | 一种mems芯片 |
CN111818434B (zh) * | 2020-06-30 | 2022-03-25 | 歌尔微电子有限公司 | Mems传感器和电子设备 |
CN113949976B (zh) * | 2020-07-17 | 2022-11-15 | 通用微(深圳)科技有限公司 | 声音采集装置、声音处理设备及方法、装置、存储介质 |
CN213694144U (zh) * | 2020-12-25 | 2021-07-13 | 歌尔微电子有限公司 | Mems传感器芯片、麦克风和电子设备 |
CN112887895B (zh) * | 2021-01-26 | 2022-06-07 | 苏州工业园区纳米产业技术研究院有限公司 | 一种调整mems麦克风吸合电压的工艺方法 |
CN215935099U (zh) * | 2021-10-15 | 2022-03-01 | 苏州敏芯微电子技术股份有限公司 | 微机电结构及其mems麦克风 |
CN114598979B (zh) * | 2022-05-10 | 2022-08-16 | 迈感微电子(上海)有限公司 | 一种双振膜mems麦克风及其制造方法 |
CN115159439A (zh) * | 2022-05-26 | 2022-10-11 | 歌尔微电子股份有限公司 | Mems装置和电子设备 |
CN115065920A (zh) * | 2022-05-26 | 2022-09-16 | 歌尔微电子股份有限公司 | Mems装置和电子设备 |
CN117319907A (zh) * | 2022-06-21 | 2023-12-29 | 歌尔微电子股份有限公司 | Mems麦克风及麦克风加工工艺 |
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2017
- 2017-11-24 CN CN201711192077.3A patent/CN107835477B/zh active Active
- 2017-11-30 KR KR1020187001523A patent/KR102128668B1/ko active IP Right Grant
- 2017-11-30 EP EP17832031.3A patent/EP3518558B1/en active Active
- 2017-11-30 JP JP2018502717A patent/JP6703089B2/ja active Active
- 2017-11-30 WO PCT/CN2017/113952 patent/WO2019100432A1/zh unknown
- 2017-11-30 US US15/751,191 patent/US20200204925A1/en not_active Abandoned
Patent Citations (5)
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JP2014023002A (ja) * | 2012-07-19 | 2014-02-03 | Shun Hosaka | センサ・デバイスおよびその製造方法 |
US20150125984A1 (en) * | 2013-03-12 | 2015-05-07 | Invensense, Inc. | Low Frequency Response Microphone Diaphragm Structures And Methods For Producing The Same |
US20150001647A1 (en) * | 2013-06-28 | 2015-01-01 | Infineon Technologies Ag | MEMS Microphone with Low Pressure Region Between Diaphragm and Counter Electrode |
US20150256913A1 (en) * | 2014-03-06 | 2015-09-10 | Infineon Technologies Ag | Mems sensor structure for sensing pressure waves and a change in ambient pressure |
US20170260040A1 (en) * | 2016-03-10 | 2017-09-14 | Infineon Technologies Ag | MEMS Device and MEMS Vacuum Microphone |
Also Published As
Publication number | Publication date |
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JP6703089B2 (ja) | 2020-06-03 |
EP3518558A4 (en) | 2019-07-31 |
WO2019100432A1 (zh) | 2019-05-31 |
EP3518558B1 (en) | 2020-11-04 |
KR20190073309A (ko) | 2019-06-26 |
CN107835477A (zh) | 2018-03-23 |
EP3518558A1 (en) | 2019-07-31 |
US20200204925A1 (en) | 2020-06-25 |
KR102128668B1 (ko) | 2020-06-30 |
CN107835477B (zh) | 2020-03-17 |
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