JP5309353B2 - マイクロエレクトロマシンコンデンサマイクロホン及び製造方法 - Google Patents
マイクロエレクトロマシンコンデンサマイクロホン及び製造方法 Download PDFInfo
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- JP5309353B2 JP5309353B2 JP2011106244A JP2011106244A JP5309353B2 JP 5309353 B2 JP5309353 B2 JP 5309353B2 JP 2011106244 A JP2011106244 A JP 2011106244A JP 2011106244 A JP2011106244 A JP 2011106244A JP 5309353 B2 JP5309353 B2 JP 5309353B2
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- back electrode
- microelectromechanical
- condenser microphone
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- 238000004519 manufacturing process Methods 0.000 title description 15
- 239000012528 membrane Substances 0.000 claims description 55
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 230000009471 action Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 230000003014 reinforcing effect Effects 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 description 50
- 230000035882 stress Effects 0.000 description 20
- 230000008859 change Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 230000037303 wrinkles Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005236 sound signal Effects 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 230000002277 temperature effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R7/00—Diaphragms for electromechanical transducers; Cones
- H04R7/16—Mounting or tensioning of diaphragms or cones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0307—Anchors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Description
該ベースに背面チャンバが設置され、該背面電極は該ベースに設置され並びに複数の放音孔が開孔され、且つこれら放音孔は該背面チャンバに連通する。該弾性部品は該ベースに設置される。該剛性振動膜において該背面電極に平行に且つ該背面電極に対応する位置に該弾性部品が設置される。これにより音波が該剛性振動膜に作用する時、該剛性振動膜は該弾性部品の弾性作用により該背面電極の方向に平行に移動する。
21 ベース
22 振動膜
221 固定端
222 自由端
23 固定部品
24 背面電
25 放音孔
26 背面チャンバ
27 支持部
28 絶縁部品
30 マイクロエレクトロマシンコンデンサマイクロホン
31 ベース
32 剛性振動膜
33 弾性部品
34 背面電極
35 放音孔
37 支持部品
38 絶縁部品
39 構造強化部
Claims (6)
- マイクロエレクトロマシンコンデンサマイクロホン(30)において、
背面チャンバ(36)が設置されたベース(31)と、
該ベース(31)に設置され、該背面チャンバ(36)に連通する複数の放音孔(35)が開孔された背面電極(34)と、
該ベース(31)に設置された弾性部品(33)と、
剛性振動膜(32)であって、該背面電極(34)に平行し、該背面チャンバ(36)に背向する一側に設置され、並びに支持部品(37)を介して該背面チャンバ(36)の方向に向けて該弾性部品(33)に接続された、上記剛性振動膜(32)と、
を包含し、音波が該剛性振動膜(32)に作用する時、該剛性振動膜(32)は該弾性部品(33)の弾性作用により、該背面電極(34)の法線方向に平行に移動することを特徴とする、マイクロエレクトロマシンコンデンサマイクロホン。 - 請求項1記載のマイクロエレクトロマシンコンデンサマイクロホン(30)において、該支持部品(37)は該弾性部品(33)と該剛性振動膜(32)の間に設置され、これにより該剛性振動膜(32)が該弾性部品(33)の上方に支持されることを特徴とする、マイクロエレクトロマシンコンデンサマイクロホン。
- 請求項2記載のマイクロエレクトロマシンコンデンサマイクロホン(30)において、 該剛性振動膜(32)は円形状とされ、且つ該支持部品(37)は該剛性振動膜(32)の円の中心を支持することを特徴とする、マイクロエレクトロマシンコンデンサマイクロホン。
- 請求項1記載のマイクロエレクトロマシンコンデンサマイクロホン(30)において、 該剛性振動膜(32)及び該背面電極(34)は複数の構造強化部(39)を包含し、それぞれ該剛性振動膜(32)と該背面電極(34)の一側に設置されたことを特徴とする、マイクロエレクトロマシンコンデンサマイクロホン。
- 請求項1記載のマイクロエレクトロマシンコンデンサマイクロホン(30)において、 該ベース(31)の材料はシリコンとされ、該剛性振動膜(32)と該背面電極(34)の材料はポリシリコンとされることを特徴とする、マイクロエレクトロマシンコンデンサマイクロホン。
- 請求項1記載のマイクロエレクトロマシンコンデンサマイクロホン(30)において、 少なくとも一つの絶縁部品(38)をさらに包含し、該絶縁部品(38)は該剛性振動膜(32)と該背面電極(34)の間に設置されて、該剛性振動膜(32)が該背面電極(34)に電気的に接触するのを防止し、該絶縁部品(38)の材料は窒化シリコンとされることを特徴とする、マイクロエレクトロマシンコンデンサマイクロホン。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW099115380A TW201141246A (en) | 2010-05-14 | 2010-05-14 | Microelectromechanical capacitive microphone |
TW099115379A TWI448164B (zh) | 2010-05-14 | 2010-05-14 | Micro electromechanical condenser microphones |
TW099115379 | 2010-05-14 | ||
TW099115380 | 2010-05-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011244448A JP2011244448A (ja) | 2011-12-01 |
JP5309353B2 true JP5309353B2 (ja) | 2013-10-09 |
Family
ID=44859859
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011106244A Active JP5309353B2 (ja) | 2010-05-14 | 2011-05-11 | マイクロエレクトロマシンコンデンサマイクロホン及び製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5309353B2 (ja) |
DE (1) | DE102011050040B4 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BR112014029547A2 (pt) * | 2012-05-31 | 2017-06-27 | Koninklijke Philips Nv | placa sendo subdividida e separavel em uma pluralidade de matrizes, método de fabricação de uma placa e método de fabricação de uma matriz |
CN107786929B (zh) * | 2016-08-26 | 2023-12-26 | 华景科技无锡有限公司 | 硅麦克风 |
CN112702684B (zh) * | 2020-12-29 | 2022-08-19 | 瑞声声学科技(深圳)有限公司 | 硅基麦克风及其制造方法 |
CN113613151B (zh) * | 2021-07-30 | 2023-08-04 | 歌尔微电子股份有限公司 | 微机电系统麦克风、麦克风单体及电子设备 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5490220A (en) | 1992-03-18 | 1996-02-06 | Knowles Electronics, Inc. | Solid state condenser and microphone devices |
US5870482A (en) | 1997-02-25 | 1999-02-09 | Knowles Electronics, Inc. | Miniature silicon condenser microphone |
JP2000013891A (ja) * | 1998-06-19 | 2000-01-14 | Victor Co Of Japan Ltd | 静電型電気音響変換器 |
US7023066B2 (en) | 2001-11-20 | 2006-04-04 | Knowles Electronics, Llc. | Silicon microphone |
JP2005057645A (ja) * | 2003-08-07 | 2005-03-03 | Matsushita Electric Ind Co Ltd | エレクトレットコンデンサマイクロホン |
JP4101785B2 (ja) * | 2003-09-11 | 2008-06-18 | アオイ電子株式会社 | コンデンサーマイクロフォン及びその作製方法 |
JP4211060B2 (ja) * | 2005-08-29 | 2009-01-21 | ヤマハ株式会社 | コンデンサマイクロホン及びコンデンサマイクロホンの製造方法 |
JP4797829B2 (ja) * | 2006-06-26 | 2011-10-19 | ヤマハ株式会社 | コンデンサマイクロホン及びコンデンサマイクロホンの製造方法 |
JP5412031B2 (ja) * | 2007-07-24 | 2014-02-12 | ローム株式会社 | Memsセンサ |
JP5006364B2 (ja) * | 2008-07-28 | 2012-08-22 | アオイ電子株式会社 | 指向性マイクロフォン |
-
2011
- 2011-05-02 DE DE102011050040.5A patent/DE102011050040B4/de active Active
- 2011-05-11 JP JP2011106244A patent/JP5309353B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2011244448A (ja) | 2011-12-01 |
DE102011050040B4 (de) | 2016-10-06 |
DE102011050040A1 (de) | 2011-11-17 |
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