WO2019100432A1 - 一种mems麦克风 - Google Patents

一种mems麦克风 Download PDF

Info

Publication number
WO2019100432A1
WO2019100432A1 PCT/CN2017/113952 CN2017113952W WO2019100432A1 WO 2019100432 A1 WO2019100432 A1 WO 2019100432A1 CN 2017113952 W CN2017113952 W CN 2017113952W WO 2019100432 A1 WO2019100432 A1 WO 2019100432A1
Authority
WO
WIPO (PCT)
Prior art keywords
diaphragm
mems microphone
microphone according
sealed chamber
pressure
Prior art date
Application number
PCT/CN2017/113952
Other languages
English (en)
French (fr)
Chinese (zh)
Inventor
邹泉波
王喆
董永伟
Original Assignee
歌尔股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 歌尔股份有限公司 filed Critical 歌尔股份有限公司
Priority to US15/751,191 priority Critical patent/US20200204925A1/en
Priority to EP17832031.3A priority patent/EP3518558B1/en
Priority to JP2018502717A priority patent/JP6703089B2/ja
Priority to KR1020187001523A priority patent/KR102128668B1/ko
Publication of WO2019100432A1 publication Critical patent/WO2019100432A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04—Structural association of microphone with electric circuitry therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
    • H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only 
    • H04R1/28—Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • the present invention relates to the field of acoustic electricity, and more particularly to a microphone, and more particularly to a MEMS microphone.
  • MEMS Micro Electro Mechanical System
  • the diaphragm and the back pole are important components in the MEMS microphone.
  • the diaphragm and the back electrode form a capacitor integrated on the silicon wafer to realize the conversion of acoustic and electric power. .
  • a through hole is usually provided on the back pole.
  • the through hole forms a damping-like capillary sound absorbing structure which improves the acoustic resistance on the sound transmission path.
  • An increase in acoustic resistance means that the thermal noise of the air causes an increase in the noise floor, which ultimately reduces the SNR.
  • air damping is also generated in the gap between the diaphragm and the back plate, which is another important factor affecting the acoustic impedance of the microphone noise.
  • the above two air dampings are often the main contributors to microphone noise, which is the bottleneck for achieving high signal-to-noise ratio (SNR) microphones.
  • SNR signal-to-noise ratio
  • a dual-diaphragm microphone structure has appeared on the existing market.
  • the two diaphragms of the microphone structure enclose an air-tight sealed cavity, and a central back pole having a perforation is disposed between the two diaphragms.
  • the back pole is located in the sealed cavity of the two diaphragms and forms a differential capacitor structure with the two diaphragms.
  • a support column for supporting the central position of the two diaphragms is also provided.
  • Microphones of this construction are located in the sealed cavity, which has a higher acoustic impedance than conventional microphones and therefore higher noise.
  • the two diaphragms will bulge to the outside, and vice versa, the two diaphragms will deform toward the back pole.
  • This change in static ambient pressure can affect the performance of the microphone (eg, sensitivity) due to variations in the common mode gap. Especially when the temperature rises, the pressure difference between the surrounding environment and the sealed chamber is large.
  • the arrangement of the support column causes the rigidity of the diaphragm to be large, so that the diaphragm does not well characterize the state of the sound pressure, which reduces the sensitivity of the vibration of the diaphragm, thereby affecting the performance of the microphone to a first extent.
  • a MEMS microphone comprising:
  • first diaphragm a first diaphragm, a second diaphragm, and a sealed cavity formed between the first diaphragm and the second diaphragm;
  • the back pole unit is located in the sealed cavity and forms a capacitor structure with the first diaphragm and the second diaphragm, and the back pole unit is provided with a plurality of through holes penetrating the two sides thereof;
  • the sealed cavity is filled with a gas having a viscosity coefficient smaller than that of air.
  • the gas is isobutane, propane, propylene, H 2 , ethane, ammonia, acetylene, ethyl chloride, ethylene, CH 3 Cl, methane, SO 2 , H 2 S, chlorine, CO 2 , At least one of N 2 O and N 2 .
  • the sealed chamber is in accordance with the pressure of the external environment.
  • the pressure of the sealed chamber is one standard atmospheric pressure.
  • the pressure difference between the sealed chamber and the external environment is less than 0.5 atm.
  • the pressure difference between the sealed chamber and the external environment is less than 0.1 atm.
  • a gap between the first diaphragm and the second diaphragm and the back pole unit is 0.5-3 ⁇ m.
  • a support column is further disposed between the first diaphragm and the second diaphragm, the support column passes through a through hole in the back pole unit and has two ends respectively corresponding to the first diaphragm and the second The diaphragms are connected together.
  • the material of the support column is the same as the material of the first diaphragm and/or the second diaphragm.
  • the support column is made of an insulating material.
  • the back pole unit is a back plate, and the back plate and the first diaphragm and the second diaphragm respectively form a capacitor structure.
  • the back pole unit includes a first back plate for forming a capacitor structure with the first diaphragm, and a second back plate for forming a capacitor structure with the second diaphragm;
  • An insulating layer is disposed between the back plate and the second back plate.
  • the sealed chamber is sealed under normal temperature and atmospheric conditions.
  • a pressure relief hole penetrating the first diaphragm and the second diaphragm is further included, and the hole wall of the pressure relief hole and the first diaphragm and the second diaphragm enclose the sealed cavity.
  • the pressure relief hole is provided with one located at a middle position of the first diaphragm and the second diaphragm; or, the pressure relief hole is provided with a plurality of.
  • the MEMS microphone of the present invention can greatly reduce the acoustic resistance of the two diaphragms when moving relative to the back pole by filling a gas with a viscosity coefficient smaller than that of the air in the sealed chamber, thereby reducing the noise of the microphone.
  • the filling with a gas with a low viscosity coefficient makes it possible to make the pressure in the sealed chamber consistent with the pressure of the external environment, avoiding the deflection of the diaphragm caused by the pressure difference, and ensuring the performance of the microphone.
  • FIG. 1 is a schematic view showing the structure of a first embodiment of a microphone of the present invention.
  • FIG. 2 is a schematic view showing the structure of a second embodiment of the microphone of the present invention.
  • FIG 3 is a schematic structural view of a third embodiment of the microphone of the present invention.
  • a MEMS microphone provided by the present invention is a dual diaphragm microphone structure.
  • the substrate 1 and the first diaphragm 3, the second diaphragm 2, and the back pole unit formed on the substrate 1 are included.
  • the diaphragm and the back pole unit of the present invention can be formed on the substrate 1 by deposition or etching.
  • the substrate 1 can be made of a single crystal silicon material, and the diaphragm and the back pole unit can be made of single crystal silicon or polysilicon material. The selection of such materials and the process of deposition are well known to those skilled in the art and will not be specifically described herein.
  • a central portion of the substrate 1 is provided with a back cavity.
  • an insulating layer is provided at a position where the second diaphragm 2 and the substrate 1 are connected, and the insulating layer may be well known to those skilled in the art. Silica material.
  • the back pole unit of the present invention is a back plate 4, and a plurality of through holes 5 penetrating the both sides thereof are disposed on the back plate 4.
  • the back plate 4 can be supported and connected to the second diaphragm 2 through the first support portion 9 such that there is a certain gap between the back plate 4 and the second diaphragm 2, which constitute a capacitor structure.
  • the first diaphragm 3 can be supported and connected to the back plate 4 via the second support portion 8 such that there is a certain gap between the first diaphragm 3 and the back plate 4, which constitute a capacitor structure.
  • the first support portion 9 and the second support portion 8 are made of an insulating material, which can support the insulation between the two diaphragms and the back plate. This type of construction and selection of materials are well known to those skilled in the art and will not be described in detail herein.
  • the back plate 4 is disposed between the first diaphragm 3 and the second diaphragm 2, and the three constitute a sandwich-like structure.
  • the two capacitor structures formed above may constitute a differential capacitor structure to improve the accuracy of the microphone, which is a structural feature of the dual diaphragm microphone, and will not be specifically described herein.
  • the back plate 4 is disposed at a central position of the first diaphragm 3 and the second diaphragm 2. That is, the distance from the back plate 4 to the first diaphragm 3 is equal to the distance from the back plate 4 to the second diaphragm 2.
  • the distance between the back plate 4 and the two diaphragms may be respectively 0.5-3 ⁇ m, which will not be specifically described herein.
  • a sealed cavity a is formed between the first diaphragm 3 and the second diaphragm 2, with reference to FIG.
  • the upper and lower sides of the sealing cavity a are the first diaphragm 3 and the second diaphragm 2
  • the left and right sides are the first support portion 9 and the second support portion 8, which together form a sealed Seal cavity a.
  • deposition and etching may be performed by a conventional MEMS process, and then the inner sacrificial layer may be etched away by an etching hole provided on the first diaphragm 3 to release the first diaphragm 3, Two diaphragms 2. Finally, the etching hole on the first diaphragm 3 is sealed to form a sealed cavity a.
  • the etching hole may be disposed on the second diaphragm 2.
  • the etching holes may also be provided on the first support portion 9 and the second support portion 8 if the process permits.
  • the etching hole can be sealed to form a sealed sealed chamber a.
  • a clogging portion may be formed at an edge of the sealing chamber a to seal the corrosion hole provided at the edge of the sealing chamber a.
  • the sealed chambers a separated by the back plates 4 can communicate with each other through the through holes 5.
  • the sealed chamber a is filled with a gas having a viscosity coefficient smaller than that of air.
  • the viscous coefficient characterizes the internal friction generated by the interaction of gas molecules during stress, and the viscosity coefficient is usually related to temperature and pressure. Therefore, a gas having a viscosity coefficient smaller than air refers to a gas having a viscosity coefficient smaller than that under air under the same conditions.
  • the equivalent condition can be, for example, within the operating conditions of the microphone, such as -20 ° C to 100 ° C, etc. Of course, some microphones need to operate in extreme environments, depending on the field of microphone application.
  • the viscosity coefficient of air at 0 ° C ⁇ 0 ° C is about 1.73 ⁇ 10 -5 Pa ⁇ s
  • the viscosity coefficient of hydrogen at 0 ° C ⁇ hydrogen 0 ° C is about 0.84 ⁇ 10 -5 Pa ⁇ s is much smaller than the viscosity coefficient of air at 0 °C.
  • the air viscosity coefficient ⁇ air 20 ° C is about 1.82 ⁇ 10 -5 Pa ⁇ s
  • the hydrogen viscosity coefficient ⁇ hydrogen 20 ° C is about 0.88 ⁇ 10 -5 Pa ⁇ s, much smaller than the air Viscosity coefficient at 20 °C.
  • the sealed chamber a can be filled with hydrogen gas, so that the viscosity coefficient of the gas in the sealed chamber a is small, which is equivalent to reducing the acoustic resistance of the two diaphragms when moving relative to the back pole, thereby reducing the noise of the microphone.
  • the gas having a viscosity coefficient lower than that of air is many, and those which are smaller than the air viscosity coefficient under the working conditions of the microphone can be selected, and for example, isobutane, propane, propylene, H 2 , ethane can be selected. At least one of ammonia, acetylene, ethyl chloride, ethylene, CH 3 Cl, methane, SO 2 , H 2 S, chlorine, CO 2 , N 2 O, and N 2 .
  • the viscosity coefficient ⁇ of the gas is directly related to the acoustic resistance Ra of the microphone.
  • the acoustic resistance of the microphone mainly includes the acoustic resistance Ra.gap between the diaphragm and the back plate gap and the acoustic resistance Ra.hole of the position of the through hole on the back plate. among them:
  • Ra.gap 12 ⁇ /( ⁇ ng 3 S mem ) ⁇ (A/2-A 2 /8-lnA/4-3/8); wherein n is the pore density, g is the size of the gap, and S mem is Diaphragm area, A is the area ratio of the through hole to the back plate.
  • Ra.hole 8 ⁇ T / ( ⁇ r 4 N); where T is the thickness of the via, r is the via radius, and N is the total number of vias.
  • the viscosity coefficient ⁇ of the gas is proportional to the acoustic resistance Ra of the microphone, that is, the smaller the viscosity coefficient ⁇ of the gas in the sealed chamber a, the smaller the acoustic resistance Ra of the microphone is. .
  • the noise power spectral density PSD(f) of the microphone is proportional to 4KTRa, where f is the frequency, K is the Boltzmann constant, and T is the temperature (in Kelvin).
  • the noise N (amplitude) in the SNR calculation formula is the square root of the weighted integration of the PSD within the desired frequency bandwidth (eg, 20 Hz-20 kHz). Therefore, the noise N (amplitude) is proportional to the square root of the gas viscosity coefficient ⁇ .
  • Another advantage of using a low viscosity coefficient gas to fill the sealed chamber is that the pressure within the sealed chamber a can be kept consistent with the ambient pressure.
  • Sealing is performed in an atmosphere of hydrogen gas at ambient temperature (room temperature) and atmospheric pressure (or near atmospheric pressure) to compensate for external environmental stress. That is to say, the pressure difference between the sealed sealed chamber a and the external environment is zero, so that the first diaphragm 3 and the second diaphragm 2 can be kept flat during static operation, and the problem of bulging or snagging does not occur.
  • the pressure in the sealed chamber a after the packaging is fixed, but the pressure in the sealed chamber a is as close as possible to the external environmental pressure.
  • the pressure of the sealed chamber a can be selected as a standard. Atmospheric pressure. Therefore, the pressure difference between the sealed chamber a and the external environment can be minimized to reduce the degree of deflection of the diaphragm due to the pressure difference, thereby ensuring the performance (sensitivity) of the microphone.
  • the pressure in the sealed chamber a may be inaccurate with the pressure of the external environment, and the error is preferably less than 0.5 atm (standard atmospheric pressure), and further preferably less than 0.1 atm (standard atmospheric pressure).
  • the support column 6 may be disposed between the two diaphragms, with reference to FIG.
  • the support post 6 passes through the through hole 5 in the back plate 4, and its two ends are connected to the first diaphragm 3 and the second diaphragm 2, respectively.
  • the support column 6 may be provided in plurality, evenly distributed between the two diaphragms, so that when there is a pressure difference between the sealed chamber a and the external environment, the support column 6 connected between the two diaphragms can resist the diaphragm Deflection.
  • the pressure difference between the sealed chamber a and the external environment may be caused by the manufacturing process, the pressure difference caused by such a process error is not large. Or when the microphone is in use, the pressure of its external environment will also change, but this change will not be very large. Therefore, a small number of support columns 6 can be selected, or a support column 6 having a large aspect ratio, that is, an elongated support column 6 can be used for support. This can significantly improve the acoustic performance (sensitivity) of the microphone compared to a support column with a large number of support columns and a small aspect ratio.
  • the support column of the present invention may be selected from the same material as the first diaphragm 3 and/or the second diaphragm 2, for example, by depositing layer by layer, layer by layer etching in the first diaphragm 3,
  • the support column 6 is formed between the two diaphragms 2, and can be released by subsequent corrosion, which is common knowledge of those skilled in the art and will not be specifically described herein.
  • the first diaphragm 3 and the second diaphragm 2 serve as one of the plates of the capacitor, a conductive material is required.
  • the support column 6 is made of the same conductive material as the first diaphragm 3 and/or the second diaphragm 2, the first diaphragm 3 and the second diaphragm 2 are short-circuited.
  • the back pole unit needs to adopt a two-electrode structure.
  • the back pole unit includes a first back plate 11 for forming a capacitor structure with the first diaphragm 3, and a second back plate 12 for forming a capacitor structure with the second diaphragm 2;
  • An insulating layer 13 is disposed between the first back plate 11 and the second back plate 12.
  • the first back plate 11, the insulating layer 13, and the second back plate 12 may be stacked together to form a back pole unit, which improves the rigidity of the back pole unit.
  • the capacitor formed by the first diaphragm 3 and the first back plate 11 is denoted by C1
  • the capacitor composed of the second diaphragm 2 and the second back plate 12 is denoted by C2
  • the capacitor C1 and the capacitor C2 form a differential capacitor structure.
  • the support column 6 may be made of an insulating material to ensure insulation between the first diaphragm 3 and the second diaphragm 2, and a single sheet as shown in FIG. 2 may be used.
  • the structure of the back plate 4 is not specifically described herein.
  • the pressure relief hole 10 penetrating the first diaphragm 3 and the second diaphragm 2 is further included to reduce the acoustic resistance of the double diaphragm when vibrating with the external environment and the back cavity.
  • the sealing cavity a is formed between the first diaphragm 3 and the second diaphragm 2, in order to avoid the communication between the pressure relief hole 10 and the sealing cavity a, the hole wall of the pressure relief hole 10 is disposed.
  • the first diaphragm 3 and the second diaphragm 2 enclose the above-described sealed cavity a, with reference to Figs. 1 and 2 .
  • the pressure relief hole 10 may be provided with one located at a central position of the first diaphragm 3 and the second diaphragm 2. It is also possible that the pressure relief holes 10 are provided in plurality, distributed in the horizontal direction of the first diaphragm 3 and the second diaphragm 2. Each of the pressure relief holes 10 needs to occupy the volume of the sealed chamber a to separate the pressure relief holes 10 from the sealed chamber a, which will not be specifically described herein.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Otolaryngology (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)
PCT/CN2017/113952 2017-11-24 2017-11-30 一种mems麦克风 WO2019100432A1 (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US15/751,191 US20200204925A1 (en) 2017-11-24 2017-11-30 Mems microphone
EP17832031.3A EP3518558B1 (en) 2017-11-24 2017-11-30 Mems microphone
JP2018502717A JP6703089B2 (ja) 2017-11-24 2017-11-30 Ｍｅｍｓマイクロホン
KR1020187001523A KR102128668B1 (ko) 2017-11-24 2017-11-30 Mems마이크

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711192077.3 2017-11-24
CN201711192077.3A CN107835477B (zh) 2017-11-24 2017-11-24 一种mems麦克风

Publications (1)

Publication Number Publication Date
WO2019100432A1 true WO2019100432A1 (zh) 2019-05-31

Family

ID=61652602

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/113952 WO2019100432A1 (zh) 2017-11-24 2017-11-30 一种mems麦克风

Country Status (6)

Country Link
US (1) US20200204925A1 (ja)
EP (1) EP3518558B1 (ja)
JP (1) JP6703089B2 (ja)
KR (1) KR102128668B1 (ja)
CN (1) CN107835477B (ja)
WO (1) WO2019100432A1 (ja)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108584863B (zh) * 2018-04-20 2024-07-19 杭州士兰集成电路有限公司 Mems器件及其制造方法
CN108419190B (zh) * 2018-05-22 2024-03-08 上饶市经纬自动化科技有限公司 一种防御声学攻击的mems惯性传感器及其制作方法
US10771891B2 (en) * 2018-08-19 2020-09-08 xMEMS Labs, Inc. Method for manufacturing air pulse generating element
US11051109B2 (en) 2018-09-27 2021-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Dual back-plate and diaphragm microphone
DE112019004979T5 (de) 2018-10-05 2021-06-17 Knowles Electronics, Llc Verfahren zur Herstellung von MEMS-Membranen, die Wellungen umfassen
WO2020072920A1 (en) 2018-10-05 2020-04-09 Knowles Electronics, Llc Microphone device with ingress protection
CN112840676B (zh) * 2018-10-05 2022-05-03 美商楼氏电子有限公司 响应于声学信号来生成电信号的声学换能器和麦克风组件
CN109246566B (zh) * 2018-10-09 2020-05-12 歌尔股份有限公司 Mems传感器
CN209897224U (zh) 2018-12-31 2020-01-03 瑞声科技(新加坡)有限公司 一种mems麦克风
CN110012410A (zh) * 2018-12-31 2019-07-12 瑞声科技(新加坡)有限公司 Mems麦克风制造方法
CN109831730B (zh) * 2018-12-31 2021-07-09 瑞声科技(新加坡)有限公司 Mems麦克风制造方法
CN109714690A (zh) * 2018-12-31 2019-05-03 瑞声声学科技(深圳)有限公司 Mems麦克风
CN209897223U (zh) * 2018-12-31 2020-01-03 瑞声科技(新加坡)有限公司 Mems麦克风
CN110572762B (zh) * 2019-09-29 2020-11-24 潍坊歌尔微电子有限公司 一种mems芯片以及电子设备
CN110708649B (zh) * 2019-09-29 2020-12-18 潍坊歌尔微电子有限公司 一种mems芯片以及电子设备
CN211792034U (zh) * 2019-12-27 2020-10-27 歌尔微电子有限公司 一种mems芯片
CN111818434B (zh) * 2020-06-30 2022-03-25 歌尔微电子有限公司 Mems传感器和电子设备
CN113949976B (zh) * 2020-07-17 2022-11-15 通用微(深圳)科技有限公司 声音采集装置、声音处理设备及方法、装置、存储介质
CN213694144U (zh) * 2020-12-25 2021-07-13 歌尔微电子有限公司 Mems传感器芯片、麦克风和电子设备
CN112887895B (zh) * 2021-01-26 2022-06-07 苏州工业园区纳米产业技术研究院有限公司 一种调整mems麦克风吸合电压的工艺方法
CN215935099U (zh) * 2021-10-15 2022-03-01 苏州敏芯微电子技术股份有限公司 微机电结构及其mems麦克风
CN114598979B (zh) * 2022-05-10 2022-08-16 迈感微电子(上海)有限公司 一种双振膜mems麦克风及其制造方法
CN115159439A (zh) * 2022-05-26 2022-10-11 歌尔微电子股份有限公司 Mems装置和电子设备
CN115065920A (zh) * 2022-05-26 2022-09-16 歌尔微电子股份有限公司 Mems装置和电子设备
CN117319907A (zh) * 2022-06-21 2023-12-29 歌尔微电子股份有限公司 Mems麦克风及麦克风加工工艺

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080267431A1 (en) * 2005-02-24 2008-10-30 Epcos Ag Mems Microphone
CN103402160A (zh) * 2013-07-10 2013-11-20 瑞声声学科技(深圳)有限公司 Mems麦克风及其工作控制方法
CN103561374A (zh) * 2013-11-01 2014-02-05 恩沛音响设备(上海)有限公司 驻极体音头壳体入声孔结构及其传声方法
CN104254046A (zh) * 2013-06-28 2014-12-31 英飞凌科技股份有限公司 具有在振膜与对电极之间的低压区的mems麦克风
CN104902400A (zh) * 2014-03-06 2015-09-09 英飞凌科技股份有限公司 用于感测压力波以及环境压力的变化的mems传感器结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223333Y2 (ja) * 1972-06-17 1977-05-27
DE102005016243B3 (de) * 2005-04-08 2006-09-28 Austriamicrosystems Ag Mikromechanisches Bauelement, Verfahren zur Herstellung und Verwendung
US8796790B2 (en) * 2008-06-25 2014-08-05 MCube Inc. Method and structure of monolithetically integrated micromachined microphone using IC foundry-compatiable processes
JP6286636B2 (ja) * 2012-07-19 2018-03-07 俊 保坂 センサ・デバイスおよびその製造方法
US8946831B2 (en) * 2013-03-12 2015-02-03 Invensense, Inc. Low frequency response microphone diaphragm structures and methods for producing the same
GB2533410B (en) * 2014-12-19 2017-03-01 Cirrus Logic Int Semiconductor Ltd MEMS devices and processes
US9828237B2 (en) * 2016-03-10 2017-11-28 Infineon Technologies Ag MEMS device and MEMS vacuum microphone

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080267431A1 (en) * 2005-02-24 2008-10-30 Epcos Ag Mems Microphone
CN104254046A (zh) * 2013-06-28 2014-12-31 英飞凌科技股份有限公司 具有在振膜与对电极之间的低压区的mems麦克风
CN103402160A (zh) * 2013-07-10 2013-11-20 瑞声声学科技(深圳)有限公司 Mems麦克风及其工作控制方法
CN103561374A (zh) * 2013-11-01 2014-02-05 恩沛音响设备(上海)有限公司 驻极体音头壳体入声孔结构及其传声方法
CN104902400A (zh) * 2014-03-06 2015-09-09 英飞凌科技股份有限公司 用于感测压力波以及环境压力的变化的mems传感器结构

Also Published As

Publication number Publication date
KR102128668B1 (ko) 2020-06-30
JP6703089B2 (ja) 2020-06-03
CN107835477B (zh) 2020-03-17
US20200204925A1 (en) 2020-06-25
KR20190073309A (ko) 2019-06-26
JP2020502827A (ja) 2020-01-23
EP3518558A1 (en) 2019-07-31
EP3518558B1 (en) 2020-11-04
EP3518558A4 (en) 2019-07-31
CN107835477A (zh) 2018-03-23

Similar Documents

Publication Publication Date Title
WO2019100432A1 (zh) 一种mems麦克风
US9505614B2 (en) Low frequency response microphone diaphragm structures and methods for producing the same
CN207652676U (zh) 一种mems麦克风
KR101096544B1 (ko) 멤스 마이크로폰 패키지 및 패키징 방법
US20090309173A1 (en) Mems sensor
WO2019033854A1 (zh) 具有双振膜的差分电容式麦克风
CN109511067A (zh) 电容式麦克风
CN101611636A (zh) 小型不定向传声器
US11496820B2 (en) MEMS device with quadrilateral trench and insert
CN109714690A (zh) Mems麦克风
TWI724558B (zh) 麥克風及其製造方法
WO2023202418A1 (zh) 一种麦克风组件及电子设备
CN105492373A (zh) 具有高深厚比褶皱振膜的硅麦克风和有该硅麦克风的封装
WO2023130914A1 (zh) 电子设备及声学换能器
CN115119120A (zh) Mems管芯和基于mems的传感器
WO2021056606A1 (zh) 一种mems芯片以及电子设备
US10966030B2 (en) MEMS microphone, method of manufacturing the same and MEMS microphone package including the same
CN208429863U (zh) Mems器件
TWI747102B (zh) 微機電系統麥克風的結構
WO2022006999A1 (zh) 一种mems麦克风
KR101089828B1 (ko) 지향성 마이크로폰 및 그 제조 방법
US10524060B2 (en) MEMS device having novel air flow restrictor
US20220388836A1 (en) Mems chip and electric device
JP2011244448A (ja) マイクロエレクトロマシンコンデンサマイクロホン
US11405731B1 (en) Microelectromechanical system

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 20187001523

Country of ref document: KR

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 2018502717

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17832031

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE