JP2020502808A - 露光後処理装置 - Google Patents
露光後処理装置 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 176
- 238000000034 method Methods 0.000 claims abstract description 153
- 230000008569 process Effects 0.000 claims abstract description 148
- 238000009428 plumbing Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 109
- 239000012530 fluid Substances 0.000 claims description 86
- 238000012805 post-processing Methods 0.000 claims description 53
- 238000004140 cleaning Methods 0.000 claims description 21
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 18
- 239000012636 effector Substances 0.000 claims description 13
- 238000004891 communication Methods 0.000 claims description 7
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- -1 polytetrafluoroethylene Polymers 0.000 claims description 2
- 238000001816 cooling Methods 0.000 abstract description 16
- 238000010586 diagram Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 10
- 238000011161 development Methods 0.000 description 8
- 230000018109 developmental process Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000003466 anti-cipated effect Effects 0.000 description 5
- 230000005670 electromagnetic radiation Effects 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 239000006260 foam Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000012809 cooling fluid Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010511 deprotection reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013536 elastomeric material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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Abstract
Description
Claims (15)
- ファクトリインターフェースと、
配管モジュールと、
前記ファクトリインターフェースと前記配管モジュールとの間に配置されたプロセスモジュールと、
を備えるプラットフォーム装置であって、前記プロセスモジュールが、
ロボットが配置されている中央領域と、
前記中央領域の周囲に配置された複数のプロセスステーションであって、各プロセスステーションが積み重ね配置で処理チャンバと後処理チャンバとを含む、複数のプロセスステーションと、
を備える、プラットフォーム装置。 - 前記処理チャンバが、
処理空間を画定するチャンバ本体であって、前記処理空間の長軸が垂直に配向され、前記処理空間の短軸が水平に配向されている、チャンバ本体と、
前記チャンバ本体に結合された可動ドアと、
前記ドアに結合された第1の電極であって、その上に基板を支持するように構成された第1の電極と、
前記チャンバ本体に結合された第2の電極であって、前記処理空間を少なくとも部分的に画定する第2の電極と、
前記処理空間に隣接して前記チャンバ本体の側壁に形成された第1の複数の流体ポートと、
前記第1の複数の流体ポートとは反対側で前記処理空間に隣接して前記チャンバ本体の前記側壁に形成された第2の複数の流体ポートと、
を備える、請求項1に記載の装置。 - 前記第1の電極と前記ドアとの間に配置されたバッキングプレートを、さらに備える、請求項2に記載の装置。
- 第1の複数のチャネルおよび前記第1の複数の流体ポートを介して前記処理空間と流体連通しているプロセス流体源を、さらに備える、請求項2に記載の装置。
- 第2の複数のチャネルおよび前記第2の複数の流体ポートを介して前記処理空間と流体連通している流体出口を、さらに備える、請求項4に記載の装置。
- 前記第1の電極が、その上に基板を真空チャックするように構成されている、請求項2に記載の装置。
- 前記チャンバ本体が、ポリテトラフルオロエチレンから形成されている、請求項2に記載の装置。
- 前記後処理チャンバが、
処理空間を画定するチャンバ本体と、
前記処理空間内に配置された回転可能なペデスタルと、
前記処理空間に洗浄流体を供給するように構成された流体供給アームと、
モータによって昇降可能なシールドであって、前記回転可能なペデスタルの直径よりも大きい内径を有し、前記回転可能なペデスタルの半径方向外側に配置されたシールドと、
を備える、請求項1に記載の装置。 - ファクトリインターフェースと、
配管モジュールと、
前記ファクトリインターフェースと前記配管モジュールとの間に配置されたプロセスモジュールと、
を備えるプラットフォーム装置であって、前記プロセスモジュールが、
ロボットが配置されている中央領域であって、前記ロボットが複数のエンドエフェクタを備え、前記エンドエフェクタが3つの軸で可動である、中央領域と、
前記中央領域の周囲に配置された複数のプロセスステーションであって、各プロセスステーションが積み重ね配置で処理チャンバと後処理チャンバとを含む、複数のプロセスステーションと、
を備える、プラットフォーム装置。 - 前記処理チャンバが、
処理空間を画定するチャンバ本体であって、前記処理空間の長軸が垂直に配向され、前記処理空間の短軸が水平に配向されている、チャンバ本体と、
前記チャンバ本体に結合された可動ドアと、
前記ドアに結合された第1の電極であって、その上に基板を支持するように構成された第1の電極と、
前記チャンバ本体に結合された第2の電極であって、前記処理空間を少なくとも部分的に画定する第2の電極と、
前記処理空間に隣接して前記チャンバ本体の側壁に形成された第1の複数の流体ポートと、
前記第1の複数の流体ポートとは反対側で前記処理空間に隣接して前記チャンバ本体の前記側壁に形成された第2の複数の流体ポートと、
を備える、請求項9に記載の装置。 - 前記後処理チャンバが、
処理空間を画定するチャンバ本体と、
前記処理空間内に配置された回転可能なペデスタルと、
前記処理空間に洗浄流体を供給するように構成された流体供給アームと、
モータによって昇降可能なシールドであって、前記回転可能なペデスタルの直径よりも大きい内径を有し、前記回転可能なペデスタルの半径方向外側に配置されたシールドと、
を備える、請求項9に記載の装置。 - ファクトリインターフェースと、
前記ファクトリインターフェースに隣接して配置された中間モジュールであって、バッファステーションが前記中間モジュール内に配置されている、中間モジュールと、
前記中間モジュールに隣接して配置されたサポートモジュールであって、複数の洗浄ステーションがその中に配置されているサポートモジュールと、
前記サポートモジュールに隣接して配置されたプロセスモジュールと、
を備えるプラットフォーム装置であって、前記プロセスモジュールが、
複数のプロセスステーションであって、各プロセスステーションが積み重ね配置で処理チャンバと後処理チャンバとを含む、複数のプロセスステーションと、
各プロセスステーション専用の配管モジュールと、
を備える、プラットフォーム装置。 - 前記処理チャンバが、
処理空間を画定するチャンバ本体であって、前記処理空間の長軸が垂直に配向され、前記処理空間の短軸が水平に配向されている、チャンバ本体と、
前記チャンバ本体に結合された可動ドアと、
前記ドアに結合された第1の電極であって、その上に基板を支持するように構成された第1の電極と、
前記チャンバ本体に結合された第2の電極であって、前記処理空間を少なくとも部分的に画定する第2の電極と、
前記処理空間に隣接して前記チャンバ本体の側壁に形成された第1の複数の流体ポートと、
前記第1の複数の流体ポートとは反対側で前記処理空間に隣接して前記チャンバ本体の前記側壁に形成された第2の複数の流体ポートと、
を備える、請求項12に記載の装置。 - 前記後処理チャンバが、
処理空間を画定するチャンバ本体と、
前記処理空間内に配置された回転可能なペデスタルと、
前記処理空間に洗浄流体を供給するように構成された流体供給アームと、
モータによって昇降可能なシールドであって、前記回転可能なペデスタルの直径よりも大きい内径を有し、前記回転可能なペデスタルの半径方向外側に配置されたシールドと、
を備える、請求項12に記載の装置。 - 前記サポートモジュールの前記洗浄ステーションのそれぞれが、専用の配管モジュールを有する、請求項12に記載の装置。
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