JP2020198569A - Piezoelectric thin film resonator, filter, and multiplexer - Google Patents

Piezoelectric thin film resonator, filter, and multiplexer Download PDF

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JP2020198569A
JP2020198569A JP2019104420A JP2019104420A JP2020198569A JP 2020198569 A JP2020198569 A JP 2020198569A JP 2019104420 A JP2019104420 A JP 2019104420A JP 2019104420 A JP2019104420 A JP 2019104420A JP 2020198569 A JP2020198569 A JP 2020198569A
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青木　達也
Tatsuya Aoki
達也 青木
眞司 谷口
Shinji Taniguchi
眞司 谷口
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Taiyo Yuden Co Ltd
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Abstract

To make it highly power resistant.SOLUTION: A piezoelectric thin film resonator includes a substrate 10, a lower electrode 12 provided on the substrate, a piezoelectric film 14 provided on the lower electrode, an upper electrode 16 provided on the piezoelectric film, sandwiching at least a part of the piezoelectric film, and forming a resonance region 50 defined by a region overlapping the lower electrode in a plan view, and a suppression vibration layer 28 that is inserted into the piezoelectric film of a central region 52 in a region defined by a region 56 surrounded by the outer circumference of the resonance region, is not provided in a peripheral region 54 in the region 56, and suppresses vibration in the piezoelectric film.SELECTED DRAWING: Figure 2

Description

本発明は、圧電薄膜共振器、フィルタおよびマルチプレクサに関し、例えば振動抑制層を有する圧電薄膜共振器を有する圧電薄膜共振器、フィルタおよびマルチプレクサに関する。 The present invention relates to piezoelectric thin film resonators, filters and multiplexers, for example, piezoelectric thin film resonators having piezoelectric thin film resonators having a vibration suppression layer, filters and multiplexers.

圧電薄膜共振器は、例えば携帯電話等の無線機器のフィルタおよびマルチプレクサとして用いられている。圧電薄膜共振器は、圧電膜を挟み下部電極と上部電極が対向する構造を有している（特許文献１、２）。 Piezoelectric thin film resonators are used, for example, as filters and multiplexers for wireless devices such as mobile phones. The piezoelectric thin film resonator has a structure in which the lower electrode and the upper electrode face each other with the piezoelectric film interposed therebetween (Patent Documents 1 and 2).

特開２０１３−１６８７４８号公報Japanese Unexamined Patent Publication No. 2013-168748 特開２００６−２０３３０４号公報JP-A-2006-203304

圧電薄膜共振器に大電力の高周波信号が加わると、下部電極、圧電膜および上部電極を含む積層膜が損傷する。これにより耐電力が低下する。 When a high-power high-frequency signal is applied to the piezoelectric thin film resonator, the laminated film including the lower electrode, the piezoelectric film, and the upper electrode is damaged. This reduces the withstand power.

本発明は上記課題に鑑みなされたものであり、高耐電力化することを目的とする。 The present invention has been made in view of the above problems, and an object of the present invention is to increase the power withstand.

本発明は、基板と、前記基板上に設けられた下部電極と、前記下部電極上に設けられた圧電膜と、前記圧電膜上に設けられ、前記圧電膜の少なくとも一部を挟み前記下部電極と平面視において重なる領域で規定される第１領域を形成するように設けられた上部電極と、前記第１領域の外周で囲われた領域で規定される第２領域内の中央領域の圧電膜に挿入され、前記第２領域内の周縁領域に設けられておらず、前記圧電膜内の振動を抑制する振動抑制層と、を備える圧電薄膜共振器である。 In the present invention, the substrate, the lower electrode provided on the substrate, the piezoelectric film provided on the lower electrode, and the lower electrode provided on the piezoelectric film and sandwiching at least a part of the piezoelectric film. An upper electrode provided so as to form a first region defined by a region overlapping the region in plan view, and a piezoelectric film in a central region within a second region defined by a region surrounded by the outer periphery of the first region. It is a piezoelectric thin film resonator provided with a vibration suppression layer that is inserted into the second region and is not provided in the peripheral region in the second region and suppresses vibration in the piezoelectric film.

上記構成において、前記第１領域と前記第２領域とは一致する構成とすることができる。 In the above configuration, the first region and the second region can be configured to match.

上記構成において、前記中央領域に前記上部電極は設けられていない構成とすることができる。 In the above configuration, the upper electrode may not be provided in the central region.

上記構成において、前記振動抑制層は前記第２領域の平面形状の重心を含む構成とすることができる。 In the above configuration, the vibration suppression layer can be configured to include the plane-shaped center of gravity of the second region.

上記構成において、前記第２領域の平面形状は略楕円形であり、前記振動抑制層は、前記略楕円形の中心および／または焦点を含む構成とすることができる。 In the above configuration, the planar shape of the second region is substantially elliptical, and the vibration suppression layer may be configured to include the center and / or focal point of the substantially elliptical shape.

上記構成において、前記振動抑制層は前記第２領域内に１個のみ設けられている構成とすることができる。 In the above configuration, only one vibration suppression layer may be provided in the second region.

上記構成において、前記振動抑制層の平面形状の面積は前記第２領域の面積の１／２以下である構成とすることができる。 In the above configuration, the area of the plane shape of the vibration suppression layer can be 1/2 or less of the area of the second region.

上記構成において、前記中央領域を囲む少なくとも一部の前記第１領域の外周を含む領域に前記振動抑制層から平面方向に離れて設けられ、前記圧電膜に挿入された挿入膜を備える構成とすることができる。 In the above configuration, an insertion film provided in a region including at least a part of the outer periphery of the first region surrounding the central region in the plane direction from the vibration suppression layer and inserted into the piezoelectric film is provided. be able to.

上記構成において、前記振動抑制層のヤング率は前記圧電膜のヤング率より小さい構成とすることができる。 In the above configuration, the Young's modulus of the vibration suppression layer can be smaller than the Young's modulus of the piezoelectric film.

上記構成において、平面視において、前記第２領域と重なり、前記第２領域より大きい空隙が前記基板と前記下部電極との間に設けられている構成とすることができる。 In the above configuration, in a plan view, a gap that overlaps with the second region and is larger than the second region may be provided between the substrate and the lower electrode.

本発明は、上記圧電薄膜共振器を含むフィルタである。 The present invention is a filter including the piezoelectric thin film resonator.

本発明は、上記フィルタを含むマルチプレクサである。 The present invention is a multiplexer including the above filter.

本発明によれば、高耐電力化することができる。 According to the present invention, the power resistance can be increased.

図１（ａ）は、実施例１に係る圧電薄膜共振器の平面図、図１（ｂ）は、図１（ａ）のＡ−Ａ断面図である。1 (a) is a plan view of the piezoelectric thin film resonator according to the first embodiment, and FIG. 1 (b) is a sectional view taken along the line AA of FIG. 1 (a). 図２（ａ）は、実施例１の変形例１に係る圧電薄膜共振器の平面図、図２（ｂ）は、図２（ａ）のＡ−Ａ断面図である。FIG. 2A is a plan view of the piezoelectric thin film resonator according to the first modification of the first embodiment, and FIG. 2B is a sectional view taken along the line AA of FIG. 2A. 図３（ａ）は、実施例１の変形例２に係る圧電薄膜共振器の平面図、図３（ｂ）は、図３（ａ）のＡ−Ａ断面図である。FIG. 3A is a plan view of the piezoelectric thin film resonator according to the second modification of the first embodiment, and FIG. 3B is a sectional view taken along the line AA of FIG. 3A. 図４（ａ）から図４（ｃ）は、それぞれ実施例１の変形例３から５に係る圧電薄膜共振器の断面図である。4 (a) to 4 (c) are cross-sectional views of the piezoelectric thin film resonator according to the modified examples 3 to 5 of the first embodiment, respectively. 図５は、実施例１の変形例６に係る圧電薄膜共振器の断面図である。FIG. 5 is a cross-sectional view of the piezoelectric thin film resonator according to the modified example 6 of the first embodiment. 図６は、実施例１の変形例７に係る圧電薄膜共振器の断面図である。FIG. 6 is a cross-sectional view of the piezoelectric thin film resonator according to the modified example 7 of the first embodiment. 図７は、実施例１の変形例８に係る圧電薄膜共振器の断面図である。FIG. 7 is a cross-sectional view of the piezoelectric thin film resonator according to the modified example 8 of the first embodiment. 図８（ａ）および図８（ｂ）は、それぞれ実施例１の変形例９および１０における圧電薄膜共振器の断面図である。8 (a) and 8 (b) are cross-sectional views of the piezoelectric thin film resonator in the modified examples 9 and 10 of the first embodiment, respectively. 図９（ａ）は、実施例２に係るフィルタの回路図、図９（ｂ）は、実施例２の変形例１に係るデュプレクサの回路図である。FIG. 9A is a circuit diagram of the filter according to the second embodiment, and FIG. 9B is a circuit diagram of the duplexer according to the first modification of the second embodiment.

以下、図面を参照し実施例について説明する。 Hereinafter, examples will be described with reference to the drawings.

図１（ａ）は、実施例１に係る圧電薄膜共振器の平面図、図１（ｂ）は、図１（ａ）のＡ−Ａ断面図である。図１（ａ）は、主に下部電極１２、上部電極１６および振動抑制層２８を図示している。 1 (a) is a plan view of the piezoelectric thin film resonator according to the first embodiment, and FIG. 1 (b) is a sectional view taken along the line AA of FIG. 1 (a). FIG. 1A mainly illustrates the lower electrode 12, the upper electrode 16, and the vibration suppression layer 28.

図１（ａ）および図１（ｂ）に示すように、基板１０および空隙３０上に、下部電極１２が設けられている。基板１０は例えばシリコン（Ｓｉ）基板であり、下部電極１２は例えばルテニウム（Ｒｕ）膜である。基板１０の平坦主面と下部電極１２との間にドーム状の膨らみを有する空隙３０（空気層）が形成されている。ドーム状の膨らみとは、例えば空隙３０の周辺では空隙３０の高さが小さく、空隙３０の内部ほど空隙３０の高さが大きくなるような形状の膨らみである。 As shown in FIGS. 1 (a) and 1 (b), the lower electrode 12 is provided on the substrate 10 and the gap 30. The substrate 10 is, for example, a silicon (Si) substrate, and the lower electrode 12 is, for example, a ruthenium (Ru) film. A gap 30 (air layer) having a dome-shaped bulge is formed between the flat main surface of the substrate 10 and the lower electrode 12. The dome-shaped bulge is, for example, a bulge having a shape in which the height of the void 30 is small around the void 30 and the height of the void 30 is increased toward the inside of the void 30.

下部電極１２上に、圧電膜１４が設けられている。圧電膜１４は例えばＣ軸方向を主軸とする窒化アルミニウム（ＡｌＮ）を主成分とする。圧電膜１４は下部圧電膜１４ａと下部圧電膜１４ａ上に設けられた上部圧電膜１４ｂとを備えている。圧電膜１４上に上部電極１６が設けられている。上部電極１６は例えばルテニウム膜である。積層膜１８は、下部電極１２、圧電膜１４および上部電極１６を含む。 A piezoelectric film 14 is provided on the lower electrode 12. The piezoelectric film 14 contains, for example, aluminum nitride (AlN) having a main axis in the C-axis direction as a main component. The piezoelectric film 14 includes a lower piezoelectric film 14a and an upper piezoelectric film 14b provided on the lower piezoelectric film 14a. The upper electrode 16 is provided on the piezoelectric film 14. The upper electrode 16 is, for example, a ruthenium film. The laminated film 18 includes a lower electrode 12, a piezoelectric film 14, and an upper electrode 16.

共振領域５０は、圧電膜１４の少なくとも一部を挟み下部電極１２と上部電極１６が平面視において重なる領域で規定される。共振領域５０の平面形状は略楕円形である。共振領域５０の外周５１に囲まれた領域を領域５８とする。実施例１では、共振領域５０と領域５８とは一致する。領域５８の中心６０を含む中央領域５２の下部圧電膜１４ａと上部圧電膜１４ｂとの間に振動抑制層２８が設けられている。振動抑制層２８は共振領域５０の外周５１を含む周縁領域５４には設けられていない。すなわち、振動抑制層２８は、平面視において共振領域５０の外周５１から離れて設けられている。 The resonance region 50 is defined as a region in which at least a part of the piezoelectric film 14 is sandwiched between the lower electrode 12 and the upper electrode 16 in a plan view. The planar shape of the resonance region 50 is substantially elliptical. The region surrounded by the outer circumference 51 of the resonance region 50 is defined as the region 58. In the first embodiment, the resonance region 50 and the region 58 coincide with each other. A vibration suppression layer 28 is provided between the lower piezoelectric film 14a and the upper piezoelectric film 14b of the central region 52 including the center 60 of the region 58. The vibration suppression layer 28 is not provided in the peripheral region 54 including the outer peripheral 51 of the resonance region 50. That is, the vibration suppression layer 28 is provided apart from the outer circumference 51 of the resonance region 50 in a plan view.

共振領域５０は、厚み縦振動モードの弾性波が共振する領域である。振動抑制層２８が設けられた中央領域５２は、弾性波の振動が抑制される。例えば、中央領域５２の共振周波数は、周縁領域５４の共振周波数から大きく異なる。 The resonance region 50 is a region in which elastic waves in the thickness longitudinal vibration mode resonate. The central region 52 provided with the vibration suppression layer 28 suppresses the vibration of elastic waves. For example, the resonance frequency of the central region 52 is significantly different from the resonance frequency of the peripheral region 54.

基板１０としては、シリコン基板以外に、サファイア基板、スピネル基板、アルミナ基板、石英基板、ガラス基板、セラミック基板またはＧａＡｓ基板等を用いることができる。下部電極１２および上部電極１６としては、Ｒｕ以外にもクロム（Ｃｒ）、アルミニウム（Ａｌ）、チタン（Ｔｉ）、銅（Ｃｕ）、モリブデン（Ｍｏ）、タングステン（Ｗ）、タンタル（Ｔａ）、白金（Ｐｔ）、ロジウム（Ｒｈ）またはイリジウム（Ｉｒ）等の単層膜またはこれらの積層膜を用いることができる As the substrate 10, a sapphire substrate, a spinel substrate, an alumina substrate, a quartz substrate, a glass substrate, a ceramic substrate, a GaAs substrate, or the like can be used in addition to the silicon substrate. In addition to Ru, the lower electrode 12 and the upper electrode 16 include chromium (Cr), aluminum (Al), titanium (Ti), copper (Cu), molybdenum (Mo), tungsten (W), tantalum (Ta), and platinum. A monolayer film such as (Pt), rhodium (Rh) or iridium (Ir) or a laminated film thereof can be used.

圧電膜１４は、窒化アルミニウム以外にも、酸化亜鉛（ＺｎＯ）、チタン酸ジルコン酸鉛（ＰＺＴ）、チタン酸鉛（ＰｂＴｉＯ3）等を用いることができる。また、例えば、圧電膜１４は、窒化アルミニウムを主成分とし、共振特性の向上または圧電性の向上のため他の元素を含んでもよい。例えば、添加元素として、Ｓｃ（スカンジウム）、２族元素と４族元素との２つの元素、または２族元素と５族元素との２つの元素を用いることにより、圧電膜１４の圧電性が向上する。このため、圧電薄膜共振器の実効的電気機械結合係数を向上できる。２族元素は、例えばＣａ（カルシウム）、Ｍｇ（マグネシウム）、Ｓｒ（ストロンチウム）またはＺｎ（亜鉛）である。４族元素は、例えばＴｉ、Ｚｒ（ジルコニウム）またはＨｆ（ハフニウム）である。５族元素は、例えばＴａ、Ｎｂ（ニオブ）またはＶ（バナジウム）である。さらに、圧電膜１４は、窒化アルミニウムを主成分とし、Ｂ（ボロン）を含んでもよい。 In addition to aluminum nitride, zinc oxide (ZnO), lead zirconate titanate (PZT), lead titanate (PbTiO 3 ), and the like can be used as the piezoelectric film 14. Further, for example, the piezoelectric film 14 may contain aluminum nitride as a main component and may contain other elements in order to improve the resonance characteristics or the piezoelectricity. For example, the piezoelectricity of the piezoelectric film 14 is improved by using Sc (scandium), two elements of Group 2 and Group 4 elements, or two elements of Group 2 and Group 5 elements as additive elements. To do. Therefore, the effective electromechanical coupling coefficient of the piezoelectric thin film resonator can be improved. Group 2 elements are, for example, Ca (calcium), Mg (magnesium), Sr (strontium) or Zn (zinc). Group 4 elements are, for example, Ti, Zr (zirconium) or Hf (hafnium). Group 5 elements are, for example, Ta, Nb (niobium) or V (vanadium). Further, the piezoelectric film 14 contains aluminum nitride as a main component and may contain B (boron).

振動抑制層２８は、圧電膜１４のヤング率より小さいヤング率を有する。振動抑制層２８は、酸化シリコン以外に、アルミニウム（Ａｌ）、金（Ａｕ）、銅、チタン、白金、タンタルまたはクロム等の単層膜またはこれらの積層膜を用いることができる。 The vibration suppression layer 28 has a Young's modulus smaller than the Young's modulus of the piezoelectric film 14. As the vibration suppression layer 28, in addition to silicon oxide, a single layer film such as aluminum (Al), gold (Au), copper, titanium, platinum, tantalum or chromium, or a laminated film thereof can be used.

共振周波数が約２．５ＧＨｚの圧電薄膜共振器おける各層の材料および厚さについて例示する。下部電極１２、圧電膜１４および上部電極１６は例えば厚さが１８０ｎｍのルテニウム膜、厚さが１μｍの窒化アルミニウム膜および厚さが１６０ｎｍのルテニウム膜である。振動抑制層２８は例えば圧電膜１４の厚さ方向の中央に設けられた厚さが１００ｎｍの酸化シリコン膜である。共振領域５０の面積は５０００μｍ２から３００００μｍ２である。 The material and thickness of each layer in a piezoelectric thin film resonator having a resonance frequency of about 2.5 GHz will be illustrated. The lower electrode 12, the piezoelectric film 14, and the upper electrode 16 are, for example, a ruthenium film having a thickness of 180 nm, an aluminum nitride film having a thickness of 1 μm, and a ruthenium film having a thickness of 160 nm. The vibration suppression layer 28 is, for example, a silicon oxide film having a thickness of 100 nm provided at the center of the piezoelectric film 14 in the thickness direction. Area of the resonance region 50 is 30000Myuemu 2 from 5000 .mu.m 2.

ＨＰＵＥ（High Power User Equipment）の対応、およびＣＡ（Carrier Aggregation）の対応により、圧電薄膜共振器には高耐電力化が求められている。下部電極１２と上部電極１６との間に大電力の高周波信号が印加されると、共振領域５０内の中心６０付近の積層膜１８の温度が上昇する。特に、空隙３０が設けられていると共振領域５０内の積層膜１８の熱は外周５１を経由して放熱されるため、共振領域５０の中心６０付近の積層膜１８の温度が最も高くなる。これにより、共振領域５０の中心６０付近の積層膜１８が損傷しやすくなる。例えば下部電極１２および上部電極１６との界面の剥離、または下部電極１２および上部電極１６の損傷が生じ易くなる。 Due to the support of HPUE (High Power User Equipment) and the support of CA (Carrier Aggregation), the piezoelectric thin film resonator is required to have high power resistance. When a high-power high-frequency signal is applied between the lower electrode 12 and the upper electrode 16, the temperature of the laminated film 18 near the center 60 in the resonance region 50 rises. In particular, when the gap 30 is provided, the heat of the laminated film 18 in the resonance region 50 is dissipated via the outer circumference 51, so that the temperature of the laminated film 18 near the center 60 of the resonance region 50 becomes the highest. As a result, the laminated film 18 near the center 60 of the resonance region 50 is easily damaged. For example, peeling of the interface between the lower electrode 12 and the upper electrode 16 or damage to the lower electrode 12 and the upper electrode 16 is likely to occur.

実施例１では、共振領域５０の中心６０を含む中央領域５２に振動抑制層２８を設けることで、中央領域５２における発熱を抑制できる。よって、下部電極１２と上部電極１６との間に大電力の高周波信号が印加されても積層膜１８の損傷が抑制され、圧電薄膜共振器の高耐電力化が可能となる。 In the first embodiment, by providing the vibration suppression layer 28 in the central region 52 including the center 60 of the resonance region 50, heat generation in the central region 52 can be suppressed. Therefore, even if a high-power high-frequency signal is applied between the lower electrode 12 and the upper electrode 16, damage to the laminated film 18 is suppressed, and the power resistance of the piezoelectric thin film resonator can be increased.

共振領域５０の中心６０付近では、横モードの弾性波の定在波が干渉し強め合う。特に共振領域５０の外周５１が曲線の場合、中心６０付近の定在波が強くなる。これにより、積層膜１８が損傷しやすくなり耐電力が低下する。そこで、中心６０を含む中央領域５２に振動抑制層２８を設けることで、積層膜１８の損傷が抑制され、圧電薄膜共振器の高耐電力化が可能となる。また、定在波を弱めることでスプリアスを抑制できる。共振領域５０の平面形状が略楕円形の場合、楕円形の焦点６２付近に定在波が集中する。よって、中心６０および／または焦点６２を含む中央領域５２に振動抑制層２８を設けることが好ましい。 In the vicinity of the center 60 of the resonance region 50, standing waves of elastic waves in the transverse mode interfere with each other and strengthen each other. In particular, when the outer circumference 51 of the resonance region 50 is curved, the standing wave near the center 60 becomes stronger. As a result, the laminated film 18 is easily damaged and the withstand power is lowered. Therefore, by providing the vibration suppression layer 28 in the central region 52 including the center 60, damage to the laminated film 18 is suppressed, and the power resistance of the piezoelectric thin film resonator can be increased. In addition, spurious can be suppressed by weakening the standing wave. When the planar shape of the resonance region 50 is substantially elliptical, the standing wave is concentrated near the focal point 62 of the ellipse. Therefore, it is preferable to provide the vibration suppression layer 28 in the central region 52 including the center 60 and / or the focal point 62.

[実施例１の変形例１]
図２（ａ）は、実施例１の変形例１に係る圧電薄膜共振器の平面図、図２（ｂ）は、図２（ａ）のＡ−Ａ断面図である。図２（ａ）および図２（ｂ）に示すように、共振領域５０の外周５１を含み外周５１に沿った外周領域５６の下部圧電膜１４ａと上部圧電膜１４ｂとの間に挿入膜２６が設けられている。挿入膜２６は中央領域５２を囲むように設けられ、中央領域５２から平面方向に離れて設けられている。挿入膜２６の材料は振動抑制層２８に例示した材料と同じであり、挿入膜２６のヤング率は圧電膜１４のヤング率より小さい。 [Modification 1 of Example 1]
FIG. 2A is a plan view of the piezoelectric thin film resonator according to the first modification of the first embodiment, and FIG. 2B is a sectional view taken along the line AA of FIG. 2A. As shown in FIGS. 2A and 2B, an insertion film 26 is formed between the lower piezoelectric film 14a and the upper piezoelectric film 14b of the outer peripheral region 56 including the outer peripheral 51 of the resonance region 50 and along the outer peripheral region 51. It is provided. The insertion membrane 26 is provided so as to surround the central region 52, and is provided apart from the central region 52 in the plane direction. The material of the insertion film 26 is the same as the material exemplified for the vibration suppression layer 28, and the Young's modulus of the insertion film 26 is smaller than the Young's modulus of the piezoelectric film 14.

挿入膜２６を設けることで、平面方向に伝搬する弾性波が共振領域５０の外に漏洩することを抑制し、損失を抑制できる。挿入膜２６は、中央領域５２を囲む少なくとも一部の領域に設けられていればよい。 By providing the insertion film 26, it is possible to suppress leakage of elastic waves propagating in the plane direction to the outside of the resonance region 50 and suppress loss. The insertion membrane 26 may be provided in at least a part of the region surrounding the central region 52.

下部圧電膜１４ａと上部圧電膜１４ｂとの間に挿入膜２６を設けることで、振動抑制層２８と挿入膜２６とを同時に形成できる。これにより、製造工程を省略できる。この場合、振動抑制層２８の主成分と挿入膜２６の主成分とは同じとなり、振動抑制層２８の厚さと挿入膜２６の厚さとは略同じとなる。振動抑制層２８と挿入膜２６の材料は異なっていてもよい。 By providing the insertion film 26 between the lower piezoelectric film 14a and the upper piezoelectric film 14b, the vibration suppression layer 28 and the insertion film 26 can be formed at the same time. As a result, the manufacturing process can be omitted. In this case, the main component of the vibration suppression layer 28 and the main component of the insertion film 26 are the same, and the thickness of the vibration suppression layer 28 and the thickness of the insertion film 26 are substantially the same. The materials of the vibration suppression layer 28 and the insertion film 26 may be different.

［実施例１の変形例２］
図３（ａ）は、実施例１の変形例２に係る圧電薄膜共振器の平面図、図３（ｂ）は、図３（ａ）のＡ−Ａ断面図である。図３（ａ）および図３（ｂ）に示すように、実施例１の変形例２では、中央領域５２に上部電極１６は設けられておらず、凹部５３が形成されている。これにより、中央領域５２では弾性波の振動が抑制される。 [Modification 2 of Example 1]
FIG. 3A is a plan view of the piezoelectric thin film resonator according to the second modification of the first embodiment, and FIG. 3B is a sectional view taken along the line AA of FIG. 3A. As shown in FIGS. 3 (a) and 3 (b), in the modified example 2 of the first embodiment, the upper electrode 16 is not provided in the central region 52, and the recess 53 is formed. As a result, the vibration of elastic waves is suppressed in the central region 52.

共振領域５０は周縁領域５４を含み中央領域５２を含まない。よって、共振領域５０の外周５１に囲まれた領域５８と共振領域５０とは一致しない。領域５８の平面形状は略楕円形であり、中央領域５２は略楕円形の中心６０および焦点６２を含む。その他の構成は実施例１と同じであり説明を省略する。 The resonance region 50 includes the peripheral region 54 and does not include the central region 52. Therefore, the region 58 surrounded by the outer circumference 51 of the resonance region 50 and the resonance region 50 do not match. The planar shape of the region 58 is substantially elliptical, and the central region 52 includes a substantially elliptical center 60 and a focal point 62. Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.

［実施例１の変形例３］
図４（ａ）は、実施例１の変形例３に係る圧電薄膜共振器の断面図である。図４（ａ）に示すように、実施例１の変形例３では中央領域５２に上部電極１６および上部圧電膜１４ｂが設けられていない。これにより、中央領域５２に凹部５３が設けられている。その他の構成は実施例１の変形例２と同じであり説明を省略する。 [Modification 3 of Example 1]
FIG. 4A is a cross-sectional view of the piezoelectric thin film resonator according to the third modification of the first embodiment. As shown in FIG. 4A, in the modified example 3 of the first embodiment, the upper electrode 16 and the upper piezoelectric film 14b are not provided in the central region 52. As a result, the recess 53 is provided in the central region 52. Other configurations are the same as those of the second modification of the first embodiment, and the description thereof will be omitted.

実施例１の変形例２および３のように、領域５８の中心６０および／または焦点６２を含む中央領域５２には下部電極１２、圧電膜１４および上部電極１６のうち少なくとも１つが設けられていなくてもよい。これにより、中央領域５２は共振領域５０ではなくなり、弾性波が共振しない。よって、圧電薄膜共振器の高耐電力化が可能となる。また、中央領域５２は共振領域５０に含まれなくなるため圧電薄膜共振器の静電容量が小さくなり、電気機械結合係数を大きくできる。実施例１の変形例１のように、挿入膜２６が設けられている場合に、中央領域５２に下部電極１２、圧電膜１４および上部電極１６のうち少なくとも１つが設けられていなくてもよい。 As in the modifications 2 and 3 of the first embodiment, the central region 52 including the center 60 and / or the focal point 62 of the region 58 is not provided with at least one of the lower electrode 12, the piezoelectric film 14, and the upper electrode 16. You may. As a result, the central region 52 is no longer the resonance region 50, and the elastic wave does not resonate. Therefore, it is possible to increase the power resistance of the piezoelectric thin film resonator. Further, since the central region 52 is not included in the resonance region 50, the capacitance of the piezoelectric thin film resonator is reduced, and the electromechanical coupling coefficient can be increased. When the insertion film 26 is provided as in the first modification of the first embodiment, at least one of the lower electrode 12, the piezoelectric film 14, and the upper electrode 16 may not be provided in the central region 52.

［実施例１の変形例４］
図４（ｂ）は、実施例１の変形例４に係る圧電薄膜共振器の断面図である。図４（ｂ）に示すように、実施例１の変形例４では振動抑制層２８が圧電膜１４と上部電極１６との間に設けられている。その他の構成は実施例１と同じであり説明を省略する。 [Modification 4 of Example 1]
FIG. 4B is a cross-sectional view of the piezoelectric thin film resonator according to the modified example 4 of the first embodiment. As shown in FIG. 4B, in the modified example 4 of the first embodiment, the vibration suppression layer 28 is provided between the piezoelectric film 14 and the upper electrode 16. Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.

［実施例１の変形例５］
図４（ｃ）は、実施例１の変形例５に係る圧電薄膜共振器の断面図である。図４（ｃ）に示すように、実施例１の変形例５では振動抑制層２８が下部電極１２と圧電膜１４との間に設けられている。その他の構成は実施例１と同じであり説明を省略する。 [Modification 5 of Example 1]
FIG. 4C is a cross-sectional view of the piezoelectric thin film resonator according to the modified example 5 of the first embodiment. As shown in FIG. 4C, in the modified example 5 of the first embodiment, the vibration suppression layer 28 is provided between the lower electrode 12 and the piezoelectric film 14. Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.

実施例１の変形例４および５のように、振動抑制層２８は、圧電膜１４に挿入されていればよい。実施例１の変形例１から３においても振動抑制層２８は圧電膜１４に挿入されていればよい。弾性波の振動を抑制する観点からは実施例１のように、振動抑制層２８は下部圧電膜１４ａと上部圧電膜１４ｂとの間に設けられていることが好ましい。 The vibration suppression layer 28 may be inserted into the piezoelectric film 14 as in the modifications 4 and 5 of the first embodiment. Also in the modifications 1 to 3 of the first embodiment, the vibration suppression layer 28 may be inserted into the piezoelectric film 14. From the viewpoint of suppressing the vibration of elastic waves, it is preferable that the vibration suppression layer 28 is provided between the lower piezoelectric film 14a and the upper piezoelectric film 14b as in the first embodiment.

［実施例１の変形例６］
図５は、実施例１の変形例６に係る圧電薄膜共振器の断面図である。図５に示すように、実施例１の変形例６では、領域５８の平面形状は略楕円形である。領域５８が略楕円形の場合、略楕円形の中心６０付近は外周５１から遠く発熱しやすい。また、焦点６２には横モードの定在波が集中しやすい。よって、中心６０と２個の焦点６２のそれぞれに３個の振動抑制層２８を設ける。これにより、耐電力性を向上できる。複数の振動抑制層２８を設けることで、領域５８内の振動抑制層２８の割合を小さくでき、小型化が可能となる。その他の構成は実施例１と同じであり説明を省略する。 [Modified Example 6 of Example 1]
FIG. 5 is a cross-sectional view of the piezoelectric thin film resonator according to the modified example 6 of the first embodiment. As shown in FIG. 5, in the modified example 6 of the first embodiment, the planar shape of the region 58 is substantially elliptical. When the region 58 has a substantially elliptical shape, the vicinity of the center 60 of the substantially elliptical shape is far from the outer circumference 51 and tends to generate heat. Further, the standing wave in the transverse mode tends to concentrate on the focal point 62. Therefore, three vibration suppression layers 28 are provided at each of the center 60 and the two focal points 62. As a result, the power resistance can be improved. By providing the plurality of vibration suppression layers 28, the ratio of the vibration suppression layers 28 in the region 58 can be reduced, and the size can be reduced. Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.

［実施例１の変形例７］
図６は、実施例１の変形例７に係る圧電薄膜共振器の断面図である。図６に示すように、実施例１の変形例７では、領域５８の平面形状は略円形である。領域５８が略円形の場合、略円形の中心６０付近は外周５１から遠く発熱しやすい。また、中心６０には横モードの定在波が集中しやすい。よって、中心６０付近に振動抑制層２８を設けることで、耐電力性を向上できる。その他の構成は実施例１と同じであり説明を省略する。 [Modification 7 of Example 1]
FIG. 6 is a cross-sectional view of the piezoelectric thin film resonator according to the modified example 7 of the first embodiment. As shown in FIG. 6, in the modified example 7 of the first embodiment, the planar shape of the region 58 is substantially circular. When the region 58 is substantially circular, the vicinity of the center 60 of the substantially circular shape is far from the outer circumference 51 and tends to generate heat. Further, the standing wave in the transverse mode tends to concentrate on the center 60. Therefore, by providing the vibration suppression layer 28 near the center 60, the power resistance can be improved. Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.

［実施例１の変形例８］
図７は、実施例１の変形例８に係る圧電薄膜共振器の断面図である。図７に示すように、実施例１の変形例８では、領域５８の平面形状は略多角形である。領域５８の平面形状が略多角形の場合、略多角形の中心６０（重心）付近は外周５１から遠く発熱しやすい。また、中心６０には横モードの定在波が集中しやすい。よって、中心６０付近に振動抑制層２８を設けることで、耐電力性を向上できる。その他の構成は実施例１と同じであり説明を省略する。 [Modification 8 of Example 1]
FIG. 7 is a cross-sectional view of the piezoelectric thin film resonator according to the modified example 8 of the first embodiment. As shown in FIG. 7, in the modified example 8 of the first embodiment, the planar shape of the region 58 is substantially polygonal. When the plane shape of the region 58 is a substantially polygonal shape, the vicinity of the center 60 (center of gravity) of the substantially polygonal shape is far from the outer circumference 51 and easily generates heat. Further, the standing wave in the transverse mode tends to concentrate on the center 60. Therefore, by providing the vibration suppression layer 28 near the center 60, the power resistance can be improved. Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.

実施例１の変形例７および８のように、領域５８の平面形状は任意に設定できる。振動抑制層２８は領域５８の重心に設けることが好ましい。実施例１の変形例１から６においても領域５８の平面形状を任意にできる。振動抑制層２８は領域５８の平面形状の重心に設けることが好ましい。 As in the modified examples 7 and 8 of the first embodiment, the planar shape of the region 58 can be arbitrarily set. The vibration suppression layer 28 is preferably provided at the center of gravity of the region 58. Also in the modifications 1 to 6 of the first embodiment, the planar shape of the region 58 can be arbitrarily formed. The vibration suppression layer 28 is preferably provided at the center of gravity of the planar shape of the region 58.

［実施例１の変形例９］
図８（ａ）は、実施例１の変形例９における圧電薄膜共振器の断面図である。図８（ａ）に示すように、基板１０の上面に窪みが形成されている。下部電極１２は、基板１０上に平坦に形成されている。これにより、空隙３０が、基板１０の窪みに形成されている。空隙３０は共振領域５０を含むように形成されている。その他の構成は、実施例１と同じであり説明を省略する。空隙３０は、基板１０を貫通するように形成されていてもよい。なお、下部電極１２の下面に絶縁膜が接して形成されていてもよい。すなわち、空隙３０は、基板１０と下部電極１２に接する絶縁膜との間に形成されていてもよい。絶縁膜としては、例えば窒化アルミニウム膜を用いることができる。その他の構成は実施例１と同じであり説明を省略する。 [Modification 9 of Example 1]
FIG. 8A is a cross-sectional view of the piezoelectric thin film resonator according to the modified example 9 of the first embodiment. As shown in FIG. 8A, a recess is formed on the upper surface of the substrate 10. The lower electrode 12 is formed flat on the substrate 10. As a result, the gap 30 is formed in the recess of the substrate 10. The gap 30 is formed so as to include the resonance region 50. Other configurations are the same as those in the first embodiment, and the description thereof will be omitted. The gap 30 may be formed so as to penetrate the substrate 10. An insulating film may be formed in contact with the lower surface of the lower electrode 12. That is, the gap 30 may be formed between the substrate 10 and the insulating film in contact with the lower electrode 12. As the insulating film, for example, an aluminum nitride film can be used. Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.

［実施例１の変形例１０］
図８（ｂ）は、実施例１の変形例１０における圧電薄膜共振器の断面図である。図８（ｂ）に示すように、共振領域５０の下部電極１２下に音響反射膜３１が形成されている。音響反射膜３１は、音響インピーダンスの低い膜３１ｂと音響インピーダンスの高い膜３１ａとが交互に設けられている。膜３１ａおよび３１ｂの膜厚は例えばそれぞれほぼλ／４（λは弾性波の波長）である。膜３１ａと膜３１ｂの積層数は任意に設定できる。音響反射膜３１は、音響特性の異なる少なくとも２種類の層が間隔をあけて積層されていればよい。また、基板１０が音響反射膜３１の音響特性の異なる少なくとも２種類の層のうちの１層であってもよい。例えば、音響反射膜３１は、基板１０中に音響インピーダンスの異なる膜が一層設けられている構成でもよい。その他の構成は、実施例１と同じであり説明を省略する。 [Modification 10 of Example 1]
FIG. 8B is a cross-sectional view of the piezoelectric thin film resonator according to the modified example 10 of the first embodiment. As shown in FIG. 8B, an acoustic reflection film 31 is formed under the lower electrode 12 of the resonance region 50. The acoustic reflection film 31 is provided with a film 31b having a low acoustic impedance and a film 31a having a high acoustic impedance alternately. The film thicknesses of the films 31a and 31b are, for example, approximately λ / 4 (λ is the wavelength of elastic waves), respectively. The number of layers of the film 31a and the film 31b can be arbitrarily set. The acoustic reflection film 31 may be formed by laminating at least two types of layers having different acoustic characteristics at intervals. Further, the substrate 10 may be one of at least two types of layers having different acoustic characteristics of the acoustic reflection film 31. For example, the acoustic reflection film 31 may be configured such that a film having different acoustic impedances is further provided in the substrate 10. Other configurations are the same as those in the first embodiment, and the description thereof will be omitted.

実施例１およびその変形例１から８において、実施例１の変形例９と同様に空隙３０を形成してもよく、実施例１の変形例１０と同様に空隙３０の代わりに音響反射膜３１を形成してもよい。 In the first embodiment and the modified examples 1 to 8 thereof, the void 30 may be formed in the same manner as in the modified example 9 of the first embodiment, and the acoustic reflection film 31 may be formed instead of the void 30 as in the modified example 10 of the first embodiment. May be formed.

実施例１およびその変形例１から９のように、圧電薄膜共振器は、共振領域５０において空隙３０が基板１０と下部電極１２との間に形成されているＦＢＡＲ（Film Bulk Acoustic Resonator）でもよい。また、実施例１の変形例１０のように、圧電薄膜共振器は、共振領域５０において下部電極１２下に圧電膜１４を伝搬する弾性波を反射する音響反射膜３１を備えるＳＭＲ（Solidly Mounted Resonator）でもよい。共振領域５０を含む音響反射層は、空隙３０または音響反射膜３１を含めばよい。 As in the first embodiment and the first to ninth modifications thereof, the piezoelectric thin film resonator may be an FBAR (Film Bulk Acoustic Resonator) in which a gap 30 is formed between the substrate 10 and the lower electrode 12 in the resonance region 50. .. Further, as in the modified example 10 of the first embodiment, the piezoelectric thin film resonator is an SMR (Solidly Mounted Resonator) including an acoustic reflecting film 31 that reflects an elastic wave propagating in the piezoelectric film 14 under the lower electrode 12 in the resonance region 50. ) May be. The acoustic reflection layer including the resonance region 50 may include the void 30 or the acoustic reflection film 31.

実施例１およびその変形例によれば、振動抑制層２８は、共振領域５０（第１領域）の外周５１で囲われた領域で規定される領域５８（第２領域）内の中央領域５２の圧電膜１４に挿入され、領域５８内の周縁領域５４に設けられておらず、圧電膜１４内の振動を抑制する。これにより、高耐電力化が可能となる。 According to the first embodiment and its modifications, the vibration suppression layer 28 is the central region 52 in the region 58 (second region) defined by the region surrounded by the outer circumference 51 of the resonance region 50 (first region). It is inserted into the piezoelectric film 14 and is not provided in the peripheral region 54 in the region 58, and suppresses vibration in the piezoelectric film 14. This makes it possible to increase the power resistance.

実施例１およびその変形例１、４から１０のように、共振領域５０と領域５８とは一致してもよい。実施例１の変形例２および３のように、中央領域５２に上部電極１６は設けられていなくてもよい。これにより、静電容量を削減できる。 The resonance region 50 and the region 58 may coincide with each other as in the first embodiment and the first, fourth to tenth modifications thereof. The upper electrode 16 may not be provided in the central region 52 as in the modifications 2 and 3 of the first embodiment. As a result, the capacitance can be reduced.

振動抑制層２８は、領域５８の平面形状の重心を含む。これにより、高耐電力化がより可能となる。 The vibration suppression layer 28 includes a planar center of gravity of the region 58. This makes it possible to increase the power resistance.

実施例１およびその変形例１から６、９、１０のように、振動抑制層２８の平面形状は略楕円形であり、振動抑制層２８は、略楕円形の中心６０および／または焦点６２を含む。これにより、高耐電力化がより可能となる。 As in Example 1 and its modifications 1, 6, 9, and 10, the planar shape of the vibration suppression layer 28 is substantially elliptical, and the vibration suppression layer 28 has a substantially elliptical center 60 and / or a focal point 62. Including. This makes it possible to increase the power resistance.

振動抑制層２８が設けられた領域は共振に寄与しない。よって、振動抑制層２８の面積が大きくなると圧電薄膜共振器が大型化してしまう。そこで、実施例１およびその変形例１から５、７から１０のように、振動抑制層２８は領域５８内に１個のみ設けられていることが好ましい。これにより、小型化が可能となる。 The region provided with the vibration suppression layer 28 does not contribute to resonance. Therefore, when the area of the vibration suppression layer 28 becomes large, the piezoelectric thin film resonator becomes large. Therefore, it is preferable that only one vibration suppressing layer 28 is provided in the region 58 as in Example 1 and the modified examples 1 to 5, 7 to 10. This enables miniaturization.

領域５８の平面形状が略楕円形の場合、実施例１およびその変形例１から５、９および１０のように、領域５８内には中心６０および焦点６２を含む１つの振動抑制層２８のみが設けられ、領域５８内に他の振動抑制層２８は設けられていなくてもよい。実施例１の変形例６のように、領域５８内には中心６０および焦点６２を含む２または３つの振動抑制層２８が設けられ、領域５８内に他の振動抑制層２８は設けられていなくてもよい。また、振動抑制層２８は中心６０を含み焦点６２を含まなくてもよいし、焦点６２の少なくとも１つを含み中心６０を含まなくてもよい。これにより、小型化が可能となる。 When the planar shape of the region 58 is substantially elliptical, there is only one vibration suppression layer 28 including the center 60 and the focal point 62 in the region 58, as in Examples 1 and 1 to 5, 9 and 10 thereof. It is provided, and another vibration suppression layer 28 may not be provided in the region 58. As in the modified example 6 of the first embodiment, two or three vibration suppression layers 28 including the center 60 and the focal point 62 are provided in the region 58, and no other vibration suppression layer 28 is provided in the region 58. You may. Further, the vibration suppression layer 28 may include the center 60 and may not include the focal point 62, or may include at least one of the focal points 62 and not include the center 60. This enables miniaturization.

振動抑制層２８の平面形状の面積は領域５８の面積の１／２以下が好ましく、１／４以下がより好ましく、１／１０以下がさらに好ましい。これにより圧電薄膜共振器を小型化できる。振動抑制層２８の平面形状の面積は領域５８の面積の１／１００以上が好ましい。これにより、高耐電力化がより可能となる。 The area of the plane shape of the vibration suppression layer 28 is preferably 1/2 or less, more preferably 1/4 or less, still more preferably 1/10 or less of the area of the region 58. As a result, the piezoelectric thin film resonator can be miniaturized. The area of the plane shape of the vibration suppression layer 28 is preferably 1/100 or more of the area of the region 58. This makes it possible to increase the power resistance.

振動抑制層２８のヤング率は圧電膜１４のヤング率より小さい。これにより、振動がより抑制され、高耐電力がより可能となる。 The Young's modulus of the vibration suppression layer 28 is smaller than the Young's modulus of the piezoelectric film 14. As a result, vibration is further suppressed and high power withstand is more possible.

実施例１およびその変形例１から９のように、平面視において、領域５８と重なり、領域５８より大きい空隙３０が基板１０と下部電極１２との間に設けられている。この場合、共振領域５０の中心６０付近の積層膜１８が高温となる。よって、振動抑制層２８を設けることで、高耐電力化がより可能となる。 As in the first embodiment and the first to ninth modifications thereof, a gap 30 that overlaps with the region 58 and is larger than the region 58 is provided between the substrate 10 and the lower electrode 12 in a plan view. In this case, the temperature of the laminated film 18 near the center 60 of the resonance region 50 becomes high. Therefore, by providing the vibration suppression layer 28, it is possible to further increase the power resistance.

実施例２は、実施例１およびその変形例の圧電薄膜共振器を用いたフィルタおよびデュプレクサの例である。図９（ａ）は、実施例２に係るフィルタの回路図である。図９（ａ）に示すように、入力端子Ｔ１と出力端子Ｔ２との間に、１または複数の直列共振器Ｓ１からＳ４が直列に接続されている。入力端子Ｔ１と出力端子Ｔ２との間に、１または複数の並列共振器Ｐ１からＰ４が並列に接続されている。１または複数の直列共振器Ｓ１からＳ４および１または複数の並列共振器Ｐ１からＰ４の少なくとも１つの共振器に実施例１およびその変形例の圧電薄膜共振器を用いることができる。ラダー型フィルタの共振器の個数等は適宜設定できる。 Example 2 is an example of a filter and a duplexer using a piezoelectric thin film resonator of Example 1 and its modifications. FIG. 9A is a circuit diagram of the filter according to the second embodiment. As shown in FIG. 9A, one or more series resonators S1 to S4 are connected in series between the input terminal T1 and the output terminal T2. One or more parallel resonators P1 to P4 are connected in parallel between the input terminal T1 and the output terminal T2. Piezoelectric thin film resonators of Example 1 and its modifications can be used for at least one resonator of one or more series resonators S1 to S4 and one or more parallel resonators P1 to P4. The number of resonators of the ladder type filter can be set as appropriate.

入力端子Ｔ１に大電力の高周波信号が入力した場合、複数の直列共振器Ｓ１からＳ４のうち最も入力端子Ｔ１に回路構成上近い直列共振器Ｓ１に、最も大きな高周波信号が加わる。そこで、直列共振器Ｓ１を実施例１およびその変形例の圧電薄膜共振器とすることが好ましい。直列共振器Ｓ１からＳ４および並列共振器Ｐ１からＰ４のうち少なくとも１個の共振器は、振動抑制層２８を設けないことが好ましい。これにより、フィルタを小型化できる。 When a high-power high-frequency signal is input to the input terminal T1, the largest high-frequency signal is applied to the series resonator S1 which is closest to the input terminal T1 among the plurality of series resonators S1 to S4 in terms of circuit configuration. Therefore, it is preferable to use the series resonator S1 as the piezoelectric thin film resonator of Example 1 and its modifications. It is preferable that at least one of the series resonators S1 to S4 and the parallel resonators P1 to P4 does not have the vibration suppression layer 28. As a result, the filter can be miniaturized.

図９（ｂ）は、実施例２の変形例１に係るデュプレクサの回路図である。図９（ｂ）に示すように、共通端子Ａｎｔと送信端子Ｔｘとの間に送信フィルタ４０が接続されている。共通端子Ａｎｔと受信端子Ｒｘとの間に受信フィルタ４２が接続されている。送信フィルタ４０は、送信端子Ｔｘから入力された信号のうち送信帯域の信号を送信信号として共通端子Ａｎｔに通過させ、他の周波数の信号を抑圧する。受信フィルタ４２は、共通端子Ａｎｔから入力された信号のうち受信帯域の信号を受信信号として受信端子Ｒｘに通過させ、他の周波数の信号を抑圧する。送信フィルタ４０および受信フィルタ４２の少なくとも一方を実施例２のフィルタとすることができる。送信フィルタ４０には大電力の高周波信号が印加される。そこで、送信フィルタ４０に実施例２のフィルタを用いることが好ましい。 FIG. 9B is a circuit diagram of the duplexer according to the first modification of the second embodiment. As shown in FIG. 9B, a transmission filter 40 is connected between the common terminal Ant and the transmission terminal Tx. A reception filter 42 is connected between the common terminal Ant and the reception terminal Rx. The transmission filter 40 passes a signal in the transmission band among the signals input from the transmission terminal Tx to the common terminal Ant as a transmission signal, and suppresses signals of other frequencies. The reception filter 42 passes a signal in the reception band among the signals input from the common terminal Ant to the reception terminal Rx as a reception signal, and suppresses signals of other frequencies. At least one of the transmission filter 40 and the reception filter 42 can be the filter of the second embodiment. A high-power high-frequency signal is applied to the transmission filter 40. Therefore, it is preferable to use the filter of Example 2 for the transmission filter 40.

マルチプレクサとしてデュプレクサを例に説明したがトリプレクサまたはクワッドプレクサでもよい。 Although the duplexer has been described as an example as the multiplexer, a triplexer or a quadplexer may be used.

以上、本発明の実施例について詳述したが、本発明はかかる特定の実施例に限定されるものではなく、特許請求の範囲に記載された本発明の要旨の範囲内において、種々の変形・変更が可能である。 Although the examples of the present invention have been described in detail above, the present invention is not limited to such specific examples, and various modifications and modifications are made within the scope of the gist of the present invention described in the claims. It can be changed.

１０ 基板
１２ 下部電極
１４ 圧電膜
１６ 上部電極
１８ 積層膜
２６ 挿入膜
２８ 振動抑制層
３０ 空隙
４０ 送信フィルタ
４２ 受信フィルタ
５０ 共振領域
５１ 外周
５２ 中央領域
５４ 周縁領域
５６ 外周領域
５８ 領域
６０ 中心
６２ 焦点 10 Substrate 12 Lower electrode 14 Piezoelectric film 16 Upper electrode 18 Laminated film 26 Insertion film 28 Vibration suppression layer 30 Void 40 Transmission filter 42 Reception filter 50 Resonance region 51 Outer circumference 52 Central region 54 Peripheral region 56 Outer peripheral region 58 Region 60 Center 62 Focus

Claims (12)

基板と、
前記基板上に設けられた下部電極と、
前記下部電極上に設けられた圧電膜と、
前記圧電膜上に設けられ、前記圧電膜の少なくとも一部を挟み前記下部電極と平面視において重なる領域で規定される第１領域を形成するように設けられた上部電極と、
前記第１領域の外周で囲われた領域で規定される第２領域内の中央領域の圧電膜に挿入され、前記第２領域内の周縁領域に設けられておらず、前記圧電膜内の振動を抑制する振動抑制層と、
を備える圧電薄膜共振器。 With the board
The lower electrode provided on the substrate and
With the piezoelectric film provided on the lower electrode,
An upper electrode provided on the piezoelectric film, sandwiching at least a part of the piezoelectric film, and forming a first region defined by a region overlapping the lower electrode in a plan view.
Vibration in the piezoelectric film, which is inserted into the piezoelectric film in the central region in the second region defined by the region surrounded by the outer periphery of the first region and is not provided in the peripheral region in the second region. Vibration suppression layer that suppresses
Piezoelectric thin film resonator. 前記第１領域と前記第２領域とは一致する請求項１に記載の圧電薄膜共振器。 The piezoelectric thin film resonator according to claim 1, wherein the first region and the second region coincide with each other. 前記中央領域に前記上部電極は設けられていない請求項１に記載の圧電薄膜共振器。 The piezoelectric thin film resonator according to claim 1, wherein the upper electrode is not provided in the central region. 前記振動抑制層は前記第２領域の平面形状の重心を含む請求項１から３のいずれか一項に記載の圧電薄膜共振器。 The piezoelectric thin film resonator according to any one of claims 1 to 3, wherein the vibration suppression layer includes a planar center of gravity of the second region. 前記第２領域の平面形状は略楕円形であり、前記振動抑制層は、前記略楕円形の中心および／または焦点を含む請求項１から３のいずれか一項に記載の圧電薄膜共振器。 The piezoelectric thin film resonator according to any one of claims 1 to 3, wherein the planar shape of the second region is substantially elliptical, and the vibration suppression layer includes the center and / or focal point of the substantially ellipse. 前記振動抑制層は前記第２領域内に１個のみ設けられている請求項１から５のいずれか一項に記載の圧電薄膜共振器。 The piezoelectric thin film resonator according to any one of claims 1 to 5, wherein only one vibration suppression layer is provided in the second region. 前記振動抑制層の平面形状の面積は前記第２領域の面積の１／２以下である請求項１から６のいずれか一項に記載の圧電薄膜共振器。 The piezoelectric thin film resonator according to any one of claims 1 to 6, wherein the area of the plane shape of the vibration suppression layer is ½ or less of the area of the second region. 前記中央領域を囲む少なくとも一部の前記第１領域の外周を含む領域に前記振動抑制層から平面方向に離れて設けられ、前記圧電膜に挿入された挿入膜を備える請求項１から７のいずれか一項に記載の圧電薄膜共振器。 Any of claims 1 to 7, further comprising an insertion film provided in a region including at least a part of the outer periphery of the first region surrounding the central region in a plane direction away from the vibration suppression layer and inserted into the piezoelectric film. The piezoelectric thin film resonator according to claim 1. 前記振動抑制層のヤング率は前記圧電膜のヤング率より小さい請求項１から８のいずれか一項に記載の圧電薄膜共振器。 The piezoelectric thin film resonator according to any one of claims 1 to 8, wherein the Young's modulus of the vibration suppression layer is smaller than the Young's modulus of the piezoelectric film. 平面視において、前記第２領域と重なり、前記第２領域より大きい空隙が前記基板と前記下部電極との間に設けられている請求項１から９のいずれか一項に記載の圧電薄膜共振器。 The piezoelectric thin film resonator according to any one of claims 1 to 9, wherein in a plan view, a gap that overlaps with the second region and is larger than the second region is provided between the substrate and the lower electrode. .. 請求項１から１０のいずれか一項に記載の圧電薄膜共振器を含むフィルタ。 A filter including the piezoelectric thin film resonator according to any one of claims 1 to 10. 請求項１１に記載のフィルタを含むマルチプレクサ。 A multiplexer containing the filter according to claim 11.
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