JP2020191318A - 半導体装置及びその駆動方法 - Google Patents
半導体装置及びその駆動方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 27
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- 230000005685 electric field effect Effects 0.000 claims description 13
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- 238000010586 diagram Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- 230000002093 peripheral effect Effects 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
Description
図1を参照して、実施の形態1の半導体装置3(図2から図4を参照)の一つの適用例である、スイッチング素子(ハイサイドスイッチング素子16,ローサイドスイッチング素子17)の駆動回路1を説明する。
本実施の形態の半導体装置3は、第1接合型電界効果トランジスタ5を備える。第1接合型電界効果トランジスタ5は、第1導電型のドリフト層21と、第1導電型の第1ソース領域27aと、第1導電型とは異なる第2導電型の第1ゲート領域25aと、第1導電型の第1ドレイン領域28aと、第2導電型の半導体領域36とを含む。第1接合型電界効果トランジスタ5は、第1ソース電極32aと、第1ゲート電極31aと、第1ドレイン電極33aと、制御電極38とをさらに含む。第1ソース電極32aは、第1ソース領域27aに電気的に接続されている。第1ゲート電極31aは、第1ゲート領域25aに電気的に接続されている。第1ドレイン電極33aは、第1ドレイン領域28aに電気的に接続されている。制御電極38は、半導体領域36に電気的に接続されている。第1ゲート領域25aと第1ドレイン領域28aと半導体領域36とは、ドリフト層21の第1主面21a内に形成されており、かつ、互いに離間されている。第1ソース領域27aは、ドリフト層21の第1主面21a内に形成されており、かつ、半導体領域36中に設けられている。第1ゲート領域25aは、第1ソース領域27aと第1ドレイン領域28aとの間に設けられており、かつ、第1主面21aとは反対側のドリフト層21の第2主面21bから離間されている。
図15から図18を参照して、実施の形態2の半導体装置3bを説明する。本実施の形態の半導体装置3bは、第1接合型電界効果トランジスタ5bと、第2接合型電界効果トランジスタ6bとを主に備える。本実施の形態の第1接合型電界効果トランジスタ5b及び第2接合型電界効果トランジスタ6bとは、実施の形態1の第1接合型電界効果トランジスタ5及び第2接合型電界効果トランジスタ6と同様の構成を備えるが、主に以下の点で異なる。
本実施の形態の半導体装置3bでは、第1ゲート領域25aと第2ゲート領域25bとは、互いに離間されている。ドリフト層21の第1主面21aの平面視において、第2ゲート領域25bは、第2ソース領域27bを囲んでいる。そのため、半導体装置3b(第1接合型電界効果トランジスタ5b)のオン抵抗が減少する。ドレイン電圧VdがVd1以上であるときに、第2ソース領域27bとドレイン領域28(第1ドレイン領域28a及び第2ドレイン領域28b)との間の電流Iの流れが遮断される。
Claims (8)
- 第1接合型電界効果トランジスタを備え、
前記第1接合型電界効果トランジスタは、第1導電型のドリフト層と、前記第1導電型の第1ソース領域と、前記第1導電型とは異なる第2導電型の第1ゲート領域と、前記第1導電型の第1ドレイン領域と、前記第2導電型の半導体領域と、前記第1ソース領域に電気的に接続されている第1ソース電極と、前記第1ゲート領域に電気的に接続されている第1ゲート電極と、前記第1ドレイン領域に電気的に接続されている第1ドレイン電極と、前記半導体領域に電気的に接続されている制御電極とを含み、
前記第1ゲート領域と前記第1ドレイン領域と前記半導体領域とは、前記ドリフト層の第1主面内に形成されており、かつ、互いに離間されており、
前記第1ソース領域は、前記ドリフト層の前記第1主面内に形成されており、かつ、前記半導体領域中に設けられており、
前記第1ゲート領域は、前記第1ソース領域と前記第1ドレイン領域との間に設けられており、かつ、前記第1主面とは反対側の前記ドリフト層の第2主面から離間されている、半導体装置。 - 前記第1接合型電界効果トランジスタに並列に配置されている第2接合型電界効果トランジスタをさらに備え、
前記第2接合型電界効果トランジスタは、前記ドリフト層と、前記第1導電型の第2ソース領域と、前記第2導電型の第2ゲート領域と、前記第1導電型の第2ドレイン領域と、前記第2ソース領域に電気的に接続されている第2ソース電極と、前記第2ゲート領域に電気的に接続されている第2ゲート電極と、前記第2ドレイン領域に電気的に接続されている第2ドレイン電極とを含み、
前記第2ソース領域と前記第2ゲート領域と前記第2ドレイン領域とは、前記ドリフト層の前記第1主面内に形成されており、かつ、互いに離間されており、
前記第2ゲート領域は、前記第2ソース領域と前記第2ドレイン領域との間に設けられており、かつ、前記ドリフト層の前記第2主面から離間されており、
前記半導体領域は、前記第1接合型電界効果トランジスタ及び前記第2接合型電界効果トランジスタのうち前記第1接合型電界効果トランジスタに選択的に設けられている、請求項1に記載の半導体装置。 - 前記第1ゲート領域と前記第2ゲート領域とは、互いに接続されて、ゲート領域を形成しており、
前記ドリフト層の前記第1主面の平面視において、前記ゲート領域は、前記ドリフト層を、前記第1ソース領域及び前記第2ソース領域に近位する第1ドリフト層部分と、前記第1ドレイン領域及び前記第2ドレイン領域に近位する第2ドリフト層部分とに区分している、請求項2に記載の半導体装置。 - 前記第1ゲート領域と前記第2ゲート領域とは、互いに離間されており、
前記ドリフト層の前記第1主面の平面視において、前記第2ゲート領域は、前記第2ソース領域を囲んでいる、請求項2に記載の半導体装置。 - 互いに隣り合う前記第1ゲート領域と前記第2ゲート領域との間の第1間隔は、前記ドリフト層の前記第2主面と前記第1ゲート領域との間の第2間隔の二倍未満であり、かつ、前記ドリフト層の前記第2主面と前記第2ゲート領域との間の第3間隔の二倍未満である、請求項4に記載の半導体装置。
- 前記第1ドレイン領域に近位するハイサイド領域と、
前記第1ソース領域に近位するローサイド領域とをさらに備え、
前記ハイサイド領域は、ハイサイドゲートドライバを含み、
前記ローサイド領域には、ローサイドゲートドライバを含む、請求項1から請求項5のいずれか一項に記載の半導体装置。 - 請求項1から請求項6のいずれか一項に記載の前記半導体装置の駆動方法であって、
前記第1ドレイン電極に印加されるドレイン電圧が前記第1ソース電極に印加されるソース電圧未満であるときに、前記制御電極に、前記ドレイン電圧より小さな第1制御電圧を印加して、前記第1ソース領域と前記ドリフト層との間にパンチスルーを生じさせることと、
前記ドレイン電圧が前記ソース電圧より大きいときに、前記制御電極に、前記ソース電圧に等しい第2制御電圧を印加することとを備える、半導体装置の駆動方法。 - 請求項6に記載の前記半導体装置の駆動方法であって、
前記第1ドレイン電極に印加されるドレイン電圧が前記第1ソース電極に印加されるソース電圧未満かつブートストラップ下限電圧以下であるときに、前記制御電極に、前記ドレイン電圧より小さな第1制御電圧を印加して、前記第1ソース領域と前記ドリフト層との間にパンチスルーを生じさせることと、
前記ドレイン電圧が前記ソース電圧未満かつ前記ブートストラップ下限電圧超であるときに、前記制御電極に、前記ドレイン電圧に等しい第3制御電圧を印加することと、
前記ドレイン電圧が前記ソース電圧より大きいときに、前記制御電極に、前記ソース電圧に等しい第2制御電圧を印加することとを備え、
前記ハイサイドゲートドライバは、ブートストラップコンデンサと、ハイサイドスイッチング素子とに電気的に接続されており、
前記ブートストラップコンデンサは、前記第1ドレイン電極に電気的に接続されており、
前記ブートストラップ下限電圧は、前記ハイサイドスイッチング素子における正常なゲート動作を実現できる前記ブートストラップコンデンサの電圧の下限である、半導体装置の駆動方法。
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