JP2020181860A - Board conveyance system and board conveyance method - Google Patents

Board conveyance system and board conveyance method Download PDF

Info

Publication number
JP2020181860A
JP2020181860A JP2019082469A JP2019082469A JP2020181860A JP 2020181860 A JP2020181860 A JP 2020181860A JP 2019082469 A JP2019082469 A JP 2019082469A JP 2019082469 A JP2019082469 A JP 2019082469A JP 2020181860 A JP2020181860 A JP 2020181860A
Authority
JP
Japan
Prior art keywords
tray
substrate
chamber
arm
transport
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2019082469A
Other languages
Japanese (ja)
Other versions
JP7233025B2 (en
Inventor
奥根 充弘
Mitsuhiro Okune
充弘 奥根
吉将 稲本
Yoshimasa Inamoto
吉将 稲本
清郎 三宅
Kiyoo Miyake
清郎 三宅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Priority to JP2019082469A priority Critical patent/JP7233025B2/en
Publication of JP2020181860A publication Critical patent/JP2020181860A/en
Application granted granted Critical
Publication of JP7233025B2 publication Critical patent/JP7233025B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

To provide a board conveyance method for circumventing positional deviation of a board from a tray, due to residual air between a board and the tray, when a processing chamber is decompressed.SOLUTION: A board conveyance method includes a step of preparing a tray having multiple open holes, and a conveyance arm having multiple projection pins at the positions corresponding to respective open holes of the tray, a placement step of placing the board on the tray, a support step of supporting the board and the tray by means of the conveyance arm by approaching the conveyance arm and the tray placed above the arm so that each projection pin penetrates a corresponding open hole and supports the board, a conveyance step of conveying the board and the tray, supported by the conveyance arm, to the chamber, and a separation step of separating the conveyance arm and the tray so that the projection pins are separated from the board, and the tray supports the board for placing the tray at a prescribed position in the chamber.SELECTED DRAWING: Figure 1

Description

本発明は、基板搬送システムおよび基板搬送方法に関し、半導体素子の製造工程において半導体基板を搬送するための基板搬送システムおよび基板搬送方法に関する。 The present invention relates to a substrate transfer system and a substrate transfer method, and relates to a substrate transfer system and a substrate transfer method for transporting a semiconductor substrate in a semiconductor element manufacturing process.

近年、携帯電話などのモバイル通信機器には複数の高機能な半導体素子(半導体チップ)が1つのパッケージ内に封止されるSiP(system in package)モジュールが用いられている。こうした半導体素子には薄型化が求められ、例えば100μm以下の厚みを有する半導体基板(半導体ウェーハ)を歩留まりよく実現する薄仕上げ研削技術が注目されている。 In recent years, mobile communication devices such as mobile phones have used SiP (system in package) modules in which a plurality of high-performance semiconductor elements (semiconductor chips) are sealed in one package. Such semiconductor elements are required to be thin, and for example, a thin finish grinding technique that realizes a semiconductor substrate (semiconductor wafer) having a thickness of 100 μm or less with good yield is attracting attention.

しかし、半導体基板が薄肉化するほど、基板の剛性が低くなり、例えば半導体基板を保管するローダとプラズマ処理するための処理チャンバとの間で、剛性の低い半導体基板を搬送ロボットアームで直接搬送することは困難であり、一般に、半導体基板を載置したトレイをロボットアームで搬送することにより、処理チャンバへの搬入および搬出を実現している。 However, as the thickness of the semiconductor substrate becomes thinner, the rigidity of the substrate becomes lower. For example, the semiconductor substrate having low rigidity is directly conveyed by the transfer robot arm between the loader for storing the semiconductor substrate and the processing chamber for plasma processing. This is difficult, and in general, loading and unloading into and out of the processing chamber is realized by transporting a tray on which a semiconductor substrate is placed by a robot arm.

具体的には、半導体基板の裏面外縁部をわずかに残して、その裏面内側部のみを研磨するバックグラインディング技術が提案され、例えば径方向の幅3mmの裏面外縁部のみを厚くすることにより半導体基板に剛性を与えて反りによる割れや欠けを防止するTAIKO(登録商標)半導体基板が実用化されている。本願では、こうした薄肉化した半導体基板を単に「薄肉化基板」ともいう。 Specifically, a back grinding technique has been proposed in which only the inner surface of the back surface is polished while leaving a small amount of the outer edge of the back surface of the semiconductor substrate. For example, a semiconductor is formed by thickening only the outer edge of the back surface having a width of 3 mm in the radial direction. TAIKO (registered trademark) semiconductor substrates that give rigidity to the substrate and prevent cracking and chipping due to warpage have been put into practical use. In the present application, such a thinned semiconductor substrate is also simply referred to as a "thinned substrate".

例えば特許文献1には、TAIKO(登録商標)半導体基板にスパッタリング処理を施す際、半導体基板の反りを防止し、糊残りなく保護テープを剥離することができる処理方法が記載されている。 For example, Patent Document 1 describes a processing method capable of preventing the semiconductor substrate from warping and peeling off the protective tape without adhesive residue when the TAIKO (registered trademark) semiconductor substrate is subjected to the sputtering treatment.

具体的に、特許文献1に記載の処理方法は、外縁部を残して内側の領域のみが研削された薄肉化基板の研削されていない側の面に基材と硬化型粘着剤を含有する硬化型粘着剤層を有するウエハ保護テープを貼り付けるテープ貼りつけ工程と、ウエハ保護テープに刺激を与えてウエハ保護テープを硬化させるテープ硬化工程と、ウエハ保護テープが貼付された薄肉化基板にスパッタリング処理を施すスパッタリング工程と、スパッタリング処理後の薄肉化基板からウエハ保護テープを剥離するテープ剥離工程とを有する。 Specifically, the treatment method described in Patent Document 1 contains a base material and a curable pressure-sensitive adhesive on the unground side surface of a thin-walled substrate in which only the inner region is ground while leaving the outer edge portion. A tape pasting step of sticking a wafer protective tape having a mold adhesive layer, a tape curing step of stimulating the wafer protective tape to cure the wafer protective tape, and a sputtering process on a thinned substrate to which the wafer protective tape is stuck. It has a sputtering step of performing the above-mentioned process and a tape peeling step of peeling the wafer protective tape from the thinned substrate after the sputtering process.

一方、こうした薄肉化した半導体基板は、裏面の内側部(中央部)が裏面外縁部より凹んでいるため、裏面外縁部を下向きにしてトレイに載置したときに、特許文献1に記載された問題(反りおよび糊残りの防止)以外に別の解決すべき課題がある。 On the other hand, since the inner portion (central portion) of the back surface of such a thinned semiconductor substrate is recessed from the outer edge portion of the back surface, it is described in Patent Document 1 when it is placed on the tray with the outer edge portion of the back surface facing downward. Besides the problem (prevention of warpage and adhesive residue), there is another problem to be solved.

すなわち薄肉化基板は、肉厚の外縁部、肉薄の内側部の裏面、およびトレイの表面との間に形成された閉空間を有し、大気圧下においては通常、この空間には空気が満たされているが、薄肉化基板が載置されたトレイが収容された処理チャンバが大気圧環境からプラズマ処理するために減圧(真空引き)されたとき、上記閉空間に満たされた空気が薄肉化基板の外縁部から勢いよく流出して、薄肉化基板がトレイから浮き上がる(跳ね上がる)ことがある。このとき薄肉化基板は、大気圧下において元あったトレイ内の所定位置に着地するとは限らず、所定位置から逸脱して着地する(位置ずれが生じる)ことがしばしばある。 That is, the thinned substrate has a closed space formed between a thick outer edge, a thin inner back surface, and a tray surface, and this space is usually filled with air under atmospheric pressure. However, when the processing chamber containing the tray on which the thinned substrate is placed is depressurized (evacuated) for plasma processing from the atmospheric pressure environment, the air filled in the closed space is thinned. The thinned substrate may be lifted (jumped up) from the tray by vigorously flowing out from the outer edge of the substrate. At this time, the thinned substrate does not always land at a predetermined position in the original tray under atmospheric pressure, and often deviates from the predetermined position and lands (misalignment occurs).

これまで、こうした位置ずれを防止するため、一般的にはオペレータが板バネなどのジグを用いて、基板をトレイに固定していたが、生産効率が低減し(作業工数が増大し)、処理チャンバ内のジグの存在が基板に対するプラズマ処理に不均一性(例えば不均一なプラズマエッチング)をもたらすこともあった。 Until now, in order to prevent such misalignment, the operator generally fixed the substrate to the tray using a jig such as a leaf spring, but the production efficiency is reduced (the work man-hours are increased) and the processing is performed. The presence of jigs in the chamber could also result in non-uniformity (eg, non-uniform plasma etching) in the plasma treatment of the substrate.

特開2018−147990号公報JP-A-2018-147990

そこで本発明の態様は、薄肉化基板が搬入された処理チャンバを減圧(真空引き)したとき、基板とトレイの間に残留している空気が薄肉化基板の外縁部から流出することを防止することにより、トレイに載置される基板の位置ずれを回避し、基板搬送の安定性を向上させることを目的とする。 Therefore, an aspect of the present invention prevents the air remaining between the substrate and the tray from flowing out from the outer edge of the thinned substrate when the processing chamber into which the thinned substrate is carried is depressurized (vacuum). The purpose of this is to avoid misalignment of the substrate placed on the tray and improve the stability of substrate transfer.

本発明に係る第1の態様は、基板搬送方法に関し、この基板搬送方法は、複数の貫通孔を有するトレイと、前記トレイの前記各貫通孔に対応する位置に複数の突出ピンを有する搬送アームとを準備する工程と、前記トレイに基板を載置する載置工程と、前記各突出ピンが対応する前記貫通孔を貫通して前記基板を支持するように前記搬送アームと前記アームの上方に配置された前記トレイとを近づけて前記基板および前記トレイを前記搬送アームで支持する支持工程と、前記搬送アームで支持された前記基板および前記トレイをチャンバへ搬送する搬送工程と、前記トレイを前記チャンバ内の所定位置に載置するために、前記突出ピンが前記基板から離れて、前記トレイが前記基板を支持するように前記搬送アームと前記トレイとを離間させる離間工程と、を備える。 A first aspect of the present invention relates to a substrate transport method, wherein the substrate transport method has a tray having a plurality of through holes and a transport arm having a plurality of protruding pins at positions corresponding to the through holes of the tray. The step of preparing the above, the step of placing the substrate on the tray, and the transfer arm and the upper part of the arm so that each of the protruding pins penetrates the corresponding through hole to support the substrate. A support step of bringing the arranged trays close to each other to support the substrate and the tray with the transport arm, a transport step of transporting the substrate and the tray supported by the transport arm to the chamber, and the tray. A separation step is provided in which the protruding pin is separated from the substrate and the tray separates the transport arm and the tray so that the tray supports the substrate in order to place the tray in a predetermined position in the chamber.

本発明に係る第2の態様は、基板搬送システムに関し、この基板搬送システムは、複数の貫通孔を有するトレイと、基板が載置された前記トレイを格納する基板格納部と、前記トレイの前記各貫通孔に対応する位置に複数の突出ピンを有する搬送アームを備えた搬送部と、減圧可能なチャンバと、を備え、前記搬送部は、前記各突出ピンが対応する前記貫通孔を貫通して前記基板を支持するように前記搬送アームと前記アームの上方に配置された前記トレイとを近づけて前記基板および前記トレイを前記搬送アームで支持し、前記トレイを前記基板格納部から前記チャンバへ搬送し、前記チャンバ内の所定位置に前記トレイを載置するために、前記突出ピンが前記基板から離れて、前記トレイが前記基板を支持するように前記搬送アームと前記トレイを離間させる。 A second aspect of the present invention relates to a substrate transfer system, wherein the substrate transfer system includes a tray having a plurality of through holes, a substrate storage unit for storing the tray on which the substrate is placed, and the said tray. A transport unit having a transport arm having a plurality of protruding pins at positions corresponding to the through holes and a chamber capable of depressurizing are provided, and the transport portion penetrates the through holes to which the protruding pins correspond. The transfer arm and the tray arranged above the arm are brought close to each other so as to support the substrate, the substrate and the tray are supported by the transfer arm, and the tray is transferred from the substrate storage portion to the chamber. In order to transport and place the tray in a predetermined position in the chamber, the protruding pin is separated from the substrate, and the transport arm and the tray are separated so that the tray supports the substrate.

本発明に係る態様によれば、トレイに載置される基板の位置ずれを抑制し、基板搬送の安定性を向上させることができる。 According to the aspect of the present invention, it is possible to suppress the misalignment of the substrate placed on the tray and improve the stability of substrate transport.

(a)および(d)は、薄肉化基板の断面図および平面図であり、(b)および(e)は、本発明の実施形態に係る基板搬送システムを構成するトレイの断面図および平面図であり、(c)および(f)は、本発明の実施形態に係る基板搬送システムを構成する搬送アームの断面図および平面図である。(A) and (d) are cross-sectional views and plan views of a thin-walled substrate, and (b) and (e) are cross-sectional views and plan views of trays constituting the substrate transfer system according to the embodiment of the present invention. (C) and (f) are a cross-sectional view and a plan view of a transfer arm constituting the substrate transfer system according to the embodiment of the present invention. (a)は、薄肉化基板がトレイに載置された状態を示す断面図であり、(b)は、トレイに載置された薄肉化基板、および上昇している搬送アームを示す断面図であり、(c)は、薄肉化基板の外縁部が搬送アームで支持されている状態を示す断面図であり、(d)は、搬送アーム下降して再び薄肉化基板がトレイに載置された状態を示す断面図である。(A) is a cross-sectional view showing a state in which the thinned substrate is placed on the tray, and (b) is a cross-sectional view showing the thinned substrate mounted on the tray and the rising transport arm. Yes, (c) is a cross-sectional view showing a state in which the outer edge portion of the thinned substrate is supported by the transport arm, and (d) is a cross-sectional view in which the thinned substrate is placed on the tray again with the transport arm lowered. It is sectional drawing which shows the state. (a)〜(k)は、本発明の実施形態に係る基板搬送方法の各工程を示す概念図であって、薄肉化基板、トレイ、ならびに搬送アームの位置、および処理チャンバの圧力状態を示す。(A) to (k) are conceptual diagrams showing each step of the substrate transfer method according to the embodiment of the present invention, and show the positions of the thinned substrate, the tray, and the transfer arm, and the pressure state of the processing chamber. ..

添付図面を参照して本発明に係る基板搬送システムおよび基板搬送方法の実施形態について以下説明する。実施形態の説明において、理解を容易にするために方向を表す用語(例えば「水平」、「上下」および「左右」等)を適宜用いるが、これらの用語は図中の方向を説明するためのものであって、本発明を限定するものでない。なお各図面において、基板搬送システムの各構成部品の形状または特徴を明確にするため、これらの寸法を相対的なものとして図示し、必ずしも同一の縮尺比で表したものではない。また、各図面において同一の構成部品には同一の符号を用いて示す。 An embodiment of the substrate transfer system and the substrate transfer method according to the present invention will be described below with reference to the accompanying drawings. In the description of the embodiments, terms indicating directions (for example, "horizontal", "up and down", "left and right", etc.) are appropriately used for ease of understanding, but these terms are used to describe the directions in the drawings. It does not limit the present invention. In each drawing, in order to clarify the shape or characteristics of each component of the substrate transfer system, these dimensions are shown as relative ones and are not necessarily represented by the same scale ratio. Further, in each drawing, the same components are shown by using the same reference numerals.

[基板搬送システムの構成]
図1(a)〜図1(f)は、本発明に係る基板搬送システム1の実施形態を示す概略図である。具体的には、図1(a)および図1(d)は、薄肉化基板10の断面図および平面図であり、図1(b)および図1(e)は、本発明の実施形態に係る基板搬送システム1を構成するトレイ20の断面図および平面図であり、図1(c)および図1(f)は、本発明の実施形態に係る基板搬送システム1を構成する搬送アーム30の断面図および平面図である。
[Configuration of board transfer system]
1 (a) to 1 (f) are schematic views showing an embodiment of the substrate transfer system 1 according to the present invention. Specifically, FIGS. 1 (a) and 1 (d) are cross-sectional views and plan views of the thinned substrate 10, and FIGS. 1 (b) and 1 (e) are the embodiments of the present invention. FIG. 1 (c) and FIG. 1 (f) are cross-sectional views and plan views of the tray 20 constituting the substrate transfer system 1, and FIGS. 1 (c) and 1 (f) show the transfer arm 30 constituting the substrate transfer system 1 according to the embodiment of the present invention. It is a sectional view and a plan view.

なお薄肉化基板10は、本発明を理解しやすくするために、例えば径方向の幅3mmの裏面外縁部12のみを厚くすることにより基板に剛性を与えて反りによる割れや欠けを防止する半導体基板であるものとして以下説明するが、これに限定されるものではなく、外縁部を含む全体が薄肉化された半導体基板であってもよい。また薄肉化基板は、任意の半導体(Si、SiC、GaN)からなる基板であってもよいし、ガラスエポキシ樹脂等の半導体以外の材料からなる基板であってもよい。 In order to make the present invention easier to understand, the thinned substrate 10 is a semiconductor substrate that imparts rigidity to the substrate and prevents cracks and chips due to warpage by, for example, thickening only the outer back edge portion 12 having a width of 3 mm in the radial direction. However, the present invention is not limited to this, and the entire semiconductor substrate including the outer edge portion may be thinned. Further, the thinned substrate may be a substrate made of an arbitrary semiconductor (Si, SiC, GaN), or may be a substrate made of a material other than the semiconductor such as glass epoxy resin.

基板搬送システム1は、概略、薄肉化基板10が載置されたトレイ20を格納する基板格納部と、真空ポンプ(ともに図示せず)を用いて減圧可能な処理チャンバ40と、薄肉化基板10が載置されたトレイ20を基板格納部から処理チャンバ40へ搬入するとともに、処理チャンバ40から別の基板格納部に搬出する搬送部(図示せず)とを備える。すなわち搬送部は搬送アーム30を含み、搬送アーム30は、薄肉化基板10および/またはトレイ20を支持して、処理チャンバ40へ搬入するとともに、処理チャンバ40から搬出するように構成されている。 The substrate transfer system 1 generally includes a substrate storage unit for storing a tray 20 on which a thinning substrate 10 is placed, a processing chamber 40 capable of depressurizing using a vacuum pump (both not shown), and a thinning substrate 10. The tray 20 on which the tray 20 is placed is carried from the substrate storage unit into the processing chamber 40, and is provided with a transport unit (not shown) which is carried out from the processing chamber 40 to another substrate storage unit. That is, the transfer unit includes a transfer arm 30, and the transfer arm 30 is configured to support the thinned substrate 10 and / or the tray 20 and carry it into the processing chamber 40 and carry it out from the processing chamber 40.

薄肉化基板10は、例えば4インチ、5インチ、6インチまたは8インチ等の任意の径を有し、薄肉化基板10に剛性与えて反りによる割れや欠けを防止する裏面外縁部12を有し(図1(a))、裏面外縁部12は、例えば径方向に約3mmの幅を有する。薄肉化基板10の裏面外縁部12は、図中、下方に突出し、その内側に中央凹部14を形成する。すなわち薄肉化基板10は、肉厚の裏面外縁部12、肉薄の中央凹部14、およびトレイ20の表面との間に形成された閉空間を有する。 The thinned substrate 10 has an arbitrary diameter such as 4 inches, 5 inches, 6 inches, or 8 inches, and has a back surface outer edge portion 12 that imparts rigidity to the thinned substrate 10 to prevent cracking or chipping due to warpage. (FIG. 1A), the back surface outer edge portion 12 has a width of, for example, about 3 mm in the radial direction. The back surface outer edge portion 12 of the thinned substrate 10 projects downward in the drawing, and a central recess 14 is formed inside the thinned substrate 10. That is, the thinned substrate 10 has a closed space formed between the thick back surface outer edge portion 12, the thin central recess 14, and the surface of the tray 20.

トレイ20は、略円形の平面形状を有し(図1(e))、上方に突出する表面外周部22を有する(図1(b))。トレイ20の表面外周部22の内径は、薄肉化基板10の裏面外縁部12の外径より大きく、トレイ20および薄肉化基板10が同心円上に配置された場合、薄肉化基板10の裏面外縁部12とトレイ20の表面外周部22との間に、例えば約1mm〜2mmの円環状のギャップが形成されてもよい。トレイ20の表面外周部22の内径は、薄肉化基板10の外径の公差を考慮した最大寸法よりも大きく設定されることが好ましい。これにより、薄肉化基板10の外径がばらついても、確実に薄肉化基板10をトレイ20に載置できる。 The tray 20 has a substantially circular planar shape (FIG. 1 (e)) and has a surface outer peripheral portion 22 projecting upward (FIG. 1 (b)). The inner diameter of the front outer peripheral portion 22 of the tray 20 is larger than the outer diameter of the back surface outer edge portion 12 of the thinned substrate 10, and when the tray 20 and the thinned substrate 10 are arranged concentrically, the back surface outer edge portion of the thinned substrate 10 An annular gap of, for example, about 1 mm to 2 mm may be formed between the 12 and the outer peripheral portion 22 of the surface of the tray 20. The inner diameter of the outer peripheral portion 22 of the surface of the tray 20 is preferably set to be larger than the maximum dimension in consideration of the tolerance of the outer diameter of the thinned substrate 10. As a result, even if the outer diameter of the thinned substrate 10 varies, the thinned substrate 10 can be reliably placed on the tray 20.

また、薄肉化基板10が裏面外縁部12を備える場合、トレイ20の表面外周部22の内径は、薄肉化基板10の外径との差が裏面外縁部12の径方向の幅よりも小さく設定されることが好ましい。これにより、トレイ20に載置された薄肉化基板10がトレイ20内でずれても、突出ピン34を薄肉化基板10の裏面外縁部12において接触させることが可能となり、突出ピン34が肉薄の中央凹部14に接触して薄肉化基板10を破損することを防止できる。 When the thinned substrate 10 includes the back surface outer edge portion 12, the inner diameter of the front surface outer peripheral portion 22 of the tray 20 is set so that the difference from the outer diameter of the thinned substrate 10 is smaller than the radial width of the back surface outer edge portion 12. It is preferable to be done. As a result, even if the thinned substrate 10 placed on the tray 20 is displaced in the tray 20, the protruding pin 34 can be brought into contact with the back surface outer edge portion 12 of the thinned substrate 10, and the protruding pin 34 is thin. It is possible to prevent the thinned substrate 10 from being damaged by contacting the central recess 14.

また、トレイ20の表面外周部22の内径側の高さは、突出ピン34の高さとトレイ20の表面外周部22よりも内側の厚さとの差よりも大きいことが好ましい。これにより薄肉化基板10が突出ピン34に支持されてトレイ20から離間した状態で、例えば、搬送中に薄肉化基板10に対して何等かの横方向の力が加わったとしても、表面外周部22によって薄肉化基板がトレイ20の外側に飛び出すのを防止できる。 Further, it is preferable that the height of the outer peripheral portion 22 of the surface of the tray 20 on the inner diameter side is larger than the difference between the height of the protruding pin 34 and the thickness inside the outer peripheral portion 22 of the surface of the tray 20. As a result, in a state where the thinned substrate 10 is supported by the protruding pins 34 and separated from the tray 20, for example, even if some lateral force is applied to the thinned substrate 10 during transportation, the outer peripheral portion of the surface 22 can prevent the thinned substrate from popping out of the tray 20.

また本実施形態に係るトレイ20は、図示のように、薄肉化基板10の裏面外縁部12に対応する位置に複数の貫通孔24を有する。図1(d)は、トレイ20の貫通孔24に対応する薄肉化基板10の裏面外縁部12上の領域(位置)を破線小円24’で示す。なお、トレイ20の貫通孔24は、図示のように4つあることが好ましいが、これに限定されず、5つ以上であってもよい。 Further, as shown in the figure, the tray 20 according to the present embodiment has a plurality of through holes 24 at positions corresponding to the back surface outer edge portion 12 of the thinned substrate 10. FIG. 1D shows a region (position) on the back surface outer edge portion 12 of the thinned substrate 10 corresponding to the through hole 24 of the tray 20 by a broken line small circle 24'. The tray 20 preferably has four through holes 24 as shown in the figure, but is not limited to this, and may have five or more through holes 24.

本実施形態に係る搬送アーム30は、図1(a)〜図1(f)に示すように、薄肉化基板10の裏面外縁部12およびトレイ20の貫通孔24に対応する位置に複数の突出ピン34を有する。各突出ピン34は略円柱形状を有し、その外径はトレイ20の貫通孔24の内径より小さく、その長さは同一で、トレイ20の厚みより大きくなるように構成されている。すなわち搬送アーム30は、薄肉化基板10が載置されたトレイ20に対して昇降(上下移動)するとき、突出ピン34はトレイ20の貫通孔24を自在に貫通(挿通)し、薄肉化基板10の水平状態を維持したまま裏面外縁部12を押し上げ(薄肉化基板10をトレイ20から離間させ)、薄肉化基板10を支持することができる。 As shown in FIGS. 1 (a) to 1 (f), the transport arm 30 according to the present embodiment has a plurality of protrusions at positions corresponding to the back surface outer edge portion 12 of the thinned substrate 10 and the through hole 24 of the tray 20. It has a pin 34. Each protruding pin 34 has a substantially cylindrical shape, and its outer diameter is smaller than the inner diameter of the through hole 24 of the tray 20, has the same length, and is configured to be larger than the thickness of the tray 20. That is, when the transport arm 30 moves up and down (moves up and down) with respect to the tray 20 on which the thinning substrate 10 is placed, the protruding pin 34 freely penetrates (inserts) the through hole 24 of the tray 20 and the thinning substrate While maintaining the horizontal state of 10, the back surface outer edge portion 12 can be pushed up (the thinned substrate 10 is separated from the tray 20) to support the thinned substrate 10.

[基板搬送方法]
図2(a)〜図2(d)は、本発明に係る基板搬送方法の実施形態を示す概略断面図である。具体的には、図2(a)は、薄肉化基板10がトレイ20に載置された状態を示す断面図であり、図2(b)は、トレイ20に載置された薄肉化基板10、および上昇している搬送アーム30を示す断面図であり、図2(c)は、薄肉化基板10の裏面外縁部12が搬送アーム30で支持されている状態を示す断面図であり、図2(d)は、搬送アーム30が下降して、再び薄肉化基板10がトレイ20に載置された状態を示す断面図である。
[Board transfer method]
2 (a) to 2 (d) are schematic cross-sectional views showing an embodiment of the substrate transport method according to the present invention. Specifically, FIG. 2A is a cross-sectional view showing a state in which the thinned substrate 10 is mounted on the tray 20, and FIG. 2B is a cross-sectional view showing the thinned substrate 10 mounted on the tray 20. , And a cross-sectional view showing the ascending transport arm 30, FIG. 2C is a cross-sectional view showing a state in which the back surface outer edge portion 12 of the thinned substrate 10 is supported by the transport arm 30. 2 (d) is a cross-sectional view showing a state in which the transport arm 30 is lowered and the thinned substrate 10 is placed on the tray 20 again.

基板格納部には、薄肉化基板10が載置された複数のトレイ20が格納されている(図2(a))。搬送部は、搬送アーム30を基板格納部から処理チャンバ40(またはロードロック室42)まで移動させることができる。また搬送部は、各突出ピン34がトレイ20の対応する貫通孔24に正確に位置合わせされるように、搬送アーム30をトレイ20の真下に配置することができる(図2(b))。また搬送部は、搬送アーム30を上方に移動させることにより、各突出ピン34がトレイ20のそれぞれの貫通孔24を貫通し、薄肉化基板10の水平状態を維持しつつ、薄肉化基板10の裏面外縁部12を押し上げて、薄肉化基板10をトレイ20から離間させることができる(図2(c))。このときトレイ20は、搬送アーム30の上面36で支持されている。さらに搬送部は、搬送アーム30を下方に移動させることにより、各突出ピン34を各貫通孔24から退出させ、図2(b)と同様、薄肉化基板10をトレイ20に当接させ、支持させることができる(図2(d))。 A plurality of trays 20 on which the thinned substrate 10 is placed are stored in the substrate storage portion (FIG. 2A). The transfer unit can move the transfer arm 30 from the substrate storage unit to the processing chamber 40 (or load lock chamber 42). In addition, the transport unit can arrange the transport arm 30 directly below the tray 20 so that each protruding pin 34 is accurately aligned with the corresponding through hole 24 of the tray 20 (FIG. 2B). Further, in the transport unit, by moving the transport arm 30 upward, each protruding pin 34 penetrates each through hole 24 of the tray 20, and while maintaining the horizontal state of the thinned substrate 10, the thinned substrate 10 The back surface outer edge portion 12 can be pushed up to separate the thinned substrate 10 from the tray 20 (FIG. 2 (c)). At this time, the tray 20 is supported by the upper surface 36 of the transport arm 30. Further, the transport unit moves the transport arm 30 downward to retract each of the protruding pins 34 from the through holes 24, and as in FIG. 2B, brings the thinned substrate 10 into contact with the tray 20 to support it. (Fig. 2 (d)).

すなわち搬送アーム30は、その上面36でトレイ20を支持しながら、突出ピン34で薄肉化基板10を水平に支持することができ(図2(c))、搬送部は、この状態の搬送アーム30を基板格納部からロードロック室42(「予備チャンバ」ともいう。)まで搬送してもよい。 That is, the transport arm 30 can horizontally support the thinned substrate 10 with the protruding pin 34 while supporting the tray 20 on its upper surface 36 (FIG. 2 (c)), and the transport unit is in this state. 30 may be transported from the substrate storage portion to the load lock chamber 42 (also referred to as “spare chamber”).

図3(a)〜図3(k)は、薄肉化基板10が載置されたトレイ20をロードロック室42に搬入した後、処理チャンバ40でプラズマ処理するまでの一連の搬送アーム30および真空ポンプの動作(減圧状態)を示す概念図である。図中、薄肉化基板10を小円で示し、トレイ20を大円で示し、搬送アーム30をU字で示す。また図中、搬送アーム30が上方に移動して、押し上げられた状態にある薄肉化基板10をアルファベット文字Uで示し、搬送アーム30が下方に移動して、下方位置にあってトレイ20に支持されている状態にある薄肉化基板10をアルファベット文字Dで示す。 3A to 3K show a series of transfer arms 30 and a vacuum from carrying the tray 20 on which the thinned substrate 10 is placed into the load lock chamber 42 to plasma processing in the processing chamber 40. It is a conceptual diagram which shows the operation (decompression state) of a pump. In the figure, the thinned substrate 10 is shown by a small circle, the tray 20 is shown by a great circle, and the transport arm 30 is shown by a U shape. Further, in the drawing, the transfer arm 30 is moved upward to indicate the thinned substrate 10 in the pushed-up state by the letter U, and the transfer arm 30 is moved downward and is supported by the tray 20 at the lower position. The thinned substrate 10 in the state of being formed is indicated by the alphabet letter D.

さらに図中、開閉可能な第1ゲートバルブ44(左側)および第2ゲートバルブ46(右側)を有するロードロック室42を示し、処理チャンバ40は、第2ゲートバルブ46を介してロードロック室42と開閉可能に連通している。第1ゲートバルブ44および第2ゲートバルブ46は、図示しないアクチュエータを用いて独立して開閉することができる。またロードロック室42および処理チャンバ40は、同様に図示しない真空ポンプを用いて独立して減圧することができる。 Further, in the figure, a load lock chamber 42 having a first gate valve 44 (left side) and a second gate valve 46 (right side) that can be opened and closed is shown, and the processing chamber 40 is a load lock chamber 42 via the second gate valve 46. It can be opened and closed. The first gate valve 44 and the second gate valve 46 can be opened and closed independently by using an actuator (not shown). Further, the load lock chamber 42 and the processing chamber 40 can be independently depressurized by using a vacuum pump (not shown).

図3(a)は、薄肉化基板10がトレイ20に支持された状態(D)で、基板格納部に配置されている状態を示す。このとき、トレイ20および薄肉化基板10は、ロードロック室42の外部にあって大気圧下にあり、第1ゲートバルブ44および第2ゲートバルブ46は閉位置にあって、ロードロック室42および処理チャンバ40は真空状態にある。 FIG. 3A shows a state (D) in which the thinned substrate 10 is supported by the tray 20 and is arranged in the substrate storage portion. At this time, the tray 20 and the thinned substrate 10 are outside the load lock chamber 42 and are under atmospheric pressure, the first gate valve 44 and the second gate valve 46 are in the closed position, and the load lock chamber 42 and The processing chamber 40 is in a vacuum state.

第1ゲートバルブ44が開位置に移動し、ロードロック室42を大気圧状態に開放する(図3(b))。このとき、薄肉化基板10はトレイ20に支持された状態(D)のままであり、薄肉化基板10とトレイ20の表面との間には閉空間が形成され、空気が満たされている。 The first gate valve 44 moves to the open position and opens the load lock chamber 42 to the atmospheric pressure state (FIG. 3 (b)). At this time, the thinned substrate 10 remains in the state (D) supported by the tray 20, and a closed space is formed between the thinned substrate 10 and the surface of the tray 20 to be filled with air.

次に、搬送部は、搬送アーム30をトレイ20の下方に移動させる。このとき、薄肉化基板10はトレイ20に支持された状態(D)のままである。次に、搬送部は、搬送アーム30を上方に移動させて、各突出ピン34がトレイ20のそれぞれの貫通孔24を貫通し、薄肉化基板10の水平状態を維持しつつ、裏面外縁部12を押し上げて、薄肉化基板10をトレイ20から離間させる(U)(図3(c))。これにより、図2(c)を参照して説明したように、薄肉化基板10とトレイ20の表面との間の閉空間が解消される。 Next, the transport unit moves the transport arm 30 below the tray 20. At this time, the thinned substrate 10 remains in the state (D) supported by the tray 20. Next, in the transport unit, the transport arm 30 is moved upward, and each protruding pin 34 penetrates each through hole 24 of the tray 20, and while maintaining the horizontal state of the thinned substrate 10, the back surface outer edge portion 12 Is pushed up to separate the thinned substrate 10 from the tray 20 (U) (FIG. 3 (c)). As a result, as described with reference to FIG. 2C, the closed space between the thinned substrate 10 and the surface of the tray 20 is eliminated.

搬送部は、薄肉化基板10をトレイ20から離間させた状態で(U)、搬送アーム30を用いて、トレイ20および薄肉化基板10を大気圧状態にあるロードロック室42に搬入する(図3(d))。 The transport unit carries the tray 20 and the thinned substrate 10 into the load lock chamber 42 in the atmospheric pressure state by using the transport arm 30 (U) with the thinned substrate 10 separated from the tray 20 (FIG. FIG. 3 (d)).

そして第1ゲートバルブ44が閉位置に移動し(図3(e))、真空ポンプが作動して、ロードロック室42が減圧される(図3(f))。このとき、薄肉化基板10はトレイ20から離間しており(U)、薄肉化基板10とトレイ20の表面との間の閉空間が解消されているので、従来技術の欄で説明したように、減圧時に閉空間に満たされた空気により薄肉化基板10がトレイ20から浮き上がって、所定位置から逸脱して着地する(位置ずれが生じる)ことはない。したがって本実施形態によれば、基板固定用のジグを備えたトレイを準備したり、オペレータがジグを用いて薄肉化基板10をトレイ20に固定する作業を行ったりすることなく、基板の位置ずれを抑制し、基板搬送の安定性を向上することができる。 Then, the first gate valve 44 moves to the closed position (FIG. 3 (e)), the vacuum pump operates, and the load lock chamber 42 is depressurized (FIG. 3 (f)). At this time, the thinned substrate 10 is separated from the tray 20 (U), and the closed space between the thinned substrate 10 and the surface of the tray 20 is eliminated. Therefore, as described in the column of the prior art. The thinned substrate 10 does not float from the tray 20 due to the air filled in the closed space during depressurization, and does not deviate from the predetermined position and land (misalignment occurs). Therefore, according to the present embodiment, the position of the substrate is displaced without preparing a tray provided with a jig for fixing the substrate or by the operator using the jig to fix the thinned substrate 10 to the tray 20. Can be suppressed and the stability of substrate transfer can be improved.

次に、搬送部は、トレイ20を支持する搬送アーム30を水平面内で180度回転させる。また、第1ゲートバルブ44が閉位置を維持したまま、第2ゲートバルブ46が開位置に移動する(図3(g))。このとき、ロードロック室42および処理チャンバ40はともに減圧され、真空状態にある。 Next, the transport unit rotates the transport arm 30 that supports the tray 20 by 180 degrees in a horizontal plane. Further, the second gate valve 46 moves to the open position while the first gate valve 44 maintains the closed position (FIG. 3 (g)). At this time, both the load lock chamber 42 and the processing chamber 40 are depressurized and are in a vacuum state.

搬送部は、搬送アーム30を用いて、薄肉化基板10およびトレイ20を処理チャンバ40に搬入するとともに(図3(h))、処理チャンバ40内に設けられた昇降機構(図示せず)にトレイ20を受け渡した後、ロードロック室42に戻り(図3(i))、図2(d)に示すように搬送アーム30を下降させて、トレイ20と離間させる。このとき、図2(d)を参照して説明したように、薄肉化基板10はトレイ20に支持された状態(D)となり(図3(j))、薄肉化基板10とトレイ20の表面との間の閉空間が再び形成されるが、処理チャンバ40はすでに真空状態に維持されているので、閉空間内の圧力が処理チャンバ40内の圧力よりも高くなることはなく、閉空間に滞留する空気に起因して薄肉化基板10の位置ずれが起こることはない。 The transport unit uses the transport arm 30 to carry the thinned substrate 10 and the tray 20 into the processing chamber 40 (FIG. 3 (h)), and also to an elevating mechanism (not shown) provided in the processing chamber 40. After delivering the tray 20, the vehicle returns to the load lock chamber 42 (FIG. 3 (i)), and the transport arm 30 is lowered as shown in FIG. 2 (d) to separate the tray 20 from the tray 20. At this time, as described with reference to FIG. 2 (d), the thinned substrate 10 is in a state (D) supported by the tray 20 (FIG. 3 (j)), and the surfaces of the thinned substrate 10 and the tray 20 are formed. A closed space is formed again, but since the processing chamber 40 is already maintained in a vacuum state, the pressure in the closed space will not be higher than the pressure in the processing chamber 40, and the closed space will be formed. The position shift of the thinned substrate 10 does not occur due to the retained air.

最後に、処理チャンバ40にプロセスガスを導入し、高周波電圧を印加することにより、プロセスガスをプラズマ化して薄肉化基板10の表面に対してプラズマ処理を行う(図3(k))。 Finally, a process gas is introduced into the processing chamber 40, and a high-frequency voltage is applied to turn the process gas into plasma and perform plasma treatment on the surface of the thinned substrate 10 (FIG. 3 (k)).

上記説明したように、搬送部は、搬送アーム30の各突出ピン34が対応する貫通孔24を貫通して薄肉化基板10を支持するように搬送アーム30と搬送アーム30の上方に配置されたトレイ20とを近づけて薄肉化基板10およびトレイ20を搬送アーム30で支持し、トレイ20を基板格納部から処理チャンバ40へ搬送するとともに、処理チャンバ40内の所定位置にトレイ20を載置するために、突出ピン34が薄肉化基板10から離れて、トレイ20が薄肉化基板10を支持するように搬送アーム30とトレイ20を離間させるように構成されている。
したがって本実施形態によれば、ロードロック室42の減圧時、薄肉化基板10とトレイ20との間に形成される閉空間に満たされた空気により薄肉化基板10がトレイ20から浮き上がって、トレイ20の位置ずれを回避して、基板搬送の安定性を向上させるとともに、基板に対するプラズマ処理の加工精度を改善することができる。
As described above, the transport section is arranged above the transport arm 30 and the transport arm 30 so that each protruding pin 34 of the transport arm 30 penetrates the corresponding through hole 24 to support the thinned substrate 10. The thinned substrate 10 and the tray 20 are supported by the transport arm 30 in close proximity to the tray 20, the tray 20 is transported from the substrate storage portion to the processing chamber 40, and the tray 20 is placed at a predetermined position in the processing chamber 40. Therefore, the protruding pin 34 is separated from the thinning substrate 10, and the transport arm 30 and the tray 20 are separated so that the tray 20 supports the thinning substrate 10.
Therefore, according to the present embodiment, when the load lock chamber 42 is depressurized, the thinned substrate 10 is lifted from the tray 20 by the air filled in the closed space formed between the thinned substrate 10 and the tray 20, and the tray It is possible to avoid the misalignment of 20 and improve the stability of substrate transfer and improve the processing accuracy of plasma processing on the substrate.

プラズマ処理を行った薄肉化基板10は、図3(a)〜図3(k)で示す一連の動作を逆の順序で行うことにより、基板格納部に格納してもよい。 The thinned substrate 10 subjected to the plasma treatment may be stored in the substrate storage unit by performing a series of operations shown in FIGS. 3 (a) to 3 (k) in the reverse order.

なお上記説明では、搬送部は、図2(c)に示す状態の搬送アーム30を基板格納部からロードロック室42まで搬送するものとしたが、処理チャンバ40がロードロック室42の機能を併せ持つものであってもよい。この場合、搬送部は、上記一連の動作のうち、図3(a)〜(f)の動作を行った後、図3(k)のプラズマ処理を行い、同様に、図3(a)〜(f)の動作を逆の順序で行って、プラズマ処理済みの薄肉化基板10を順次、別の基板格納部に格納してもよい。 In the above description, the transport unit transports the transport arm 30 in the state shown in FIG. 2C from the substrate storage portion to the load lock chamber 42, but the processing chamber 40 also has the function of the load lock chamber 42. It may be a thing. In this case, the transport unit performs the operations of FIGS. 3 (a) to 3 (f) in the above series of operations, and then performs the plasma treatment of FIG. 3 (k), and similarly, the operations of FIGS. The operation of (f) may be performed in the reverse order, and the plasma-treated thin-walled substrate 10 may be sequentially stored in another substrate storage unit.

また、上述の通り、トレイ20に載置される基板は、薄肉化基板に限定されず、トレイ20と基板との間に閉空間を形成し、減圧時、閉空間に残留した空気により基板がトレイ20から浮き上がって、位置ずれが生じる可能性のあるものであれば、任意の形状を有する基板であってもよい。 Further, as described above, the substrate mounted on the tray 20 is not limited to the thinned substrate, and a closed space is formed between the tray 20 and the substrate, and when the pressure is reduced, the substrate is formed by the air remaining in the closed space. A substrate having an arbitrary shape may be used as long as it can be lifted from the tray 20 and misaligned.

本発明は、半導体素子の製造工程において半導体基板を搬送するための基板搬送システムおよび基板搬送方法に利用することができる。 The present invention can be used in a substrate transport system and a substrate transport method for transporting a semiconductor substrate in a semiconductor element manufacturing process.

1…基板搬送システム
10…基板(薄肉化基板)
12…裏面外縁部
14…中央凹部
20…トレイ
22…表面外周部
24…貫通孔
30…搬送アーム
34…突出ピン
36…上面
40…処理チャンバ
42…ロードロック室(予備チャンバ)
44…第1ゲートバルブ
46…第2ゲートバルブ

1 ... Substrate transfer system 10 ... Substrate (thinned substrate)
12 ... Back surface outer edge 14 ... Central recess 20 ... Tray 22 ... Front surface outer circumference 24 ... Through hole 30 ... Conveyor arm 34 ... Protruding pin 36 ... Top surface 40 ... Processing chamber 42 ... Load lock chamber (spare chamber)
44 ... 1st gate valve 46 ... 2nd gate valve

Claims (7)

複数の貫通孔を有するトレイと、前記トレイの前記各貫通孔に対応する位置に複数の突出ピンを有する搬送アームとを準備する工程と、
前記トレイに基板を載置する載置工程と、
前記各突出ピンが対応する前記貫通孔を貫通して前記基板を支持するように前記搬送アームと前記搬送アームの上方に配置された前記トレイとを近づけて前記基板および前記トレイを前記搬送アームで支持する支持工程と、
前記搬送アームで支持された前記基板および前記トレイをチャンバへ搬送する搬送工程と、
前記トレイを前記チャンバ内の所定位置に載置するために、前記突出ピンが前記基板から離れて、前記トレイが前記基板を支持するように前記搬送アームと前記トレイとを離間させる離間工程と、を備えた基板搬送方法。
A step of preparing a tray having a plurality of through holes and a transfer arm having a plurality of protruding pins at positions corresponding to the respective through holes of the tray.
The mounting process of mounting the substrate on the tray and
The transfer arm and the tray arranged above the transfer arm are brought close to each other so that each of the protruding pins penetrates the corresponding through hole to support the substrate, and the substrate and the tray are brought together by the transfer arm. Supporting process to support and
A transfer step of transferring the substrate and the tray supported by the transfer arm to the chamber, and
A separation step of separating the transport arm and the tray so that the tray separates from the substrate so that the tray supports the substrate in order to place the tray in a predetermined position in the chamber. Substrate transfer method provided with.
前記基板は、前記トレイに載置される側の面に、外縁部と、前記外縁部の内側に設けられた凹部とを有し、
前記支持工程は、前記各突出ピンが対応する前記貫通孔を貫通して前記基板の前記外縁部を支持するように前記搬送アームを前記トレイに近づけ、
前記離間工程は、前記突出ピンが前記基板の前記外縁部から離れて前記トレイが前記基板を支持するように前記搬送アームを前記トレイから離間させる、
請求項1に記載の基板搬送方法。
The substrate has an outer edge portion and a recess provided inside the outer edge portion on a surface on the side on which the tray is placed.
In the support step, the transport arm is brought closer to the tray so that each of the protruding pins penetrates the corresponding through hole and supports the outer edge portion of the substrate.
In the separation step, the transport arm is separated from the tray so that the protruding pin is separated from the outer edge portion of the substrate and the tray supports the substrate.
The substrate transport method according to claim 1.
前記チャンバは、予備チャンバおよび処理チャンバを含み、
前記搬送工程は、
前記トレイを大気圧状態にある前記予備チャンバへ搬送し、
前記予備チャンバを減圧し、
前記トレイを前記予備チャンバから減圧状態にある前記処理チャンバへ搬送する、
請求項1または2に記載の基板搬送方法。
The chamber includes a spare chamber and a processing chamber.
The transfer process is
The tray is transported to the spare chamber under atmospheric pressure,
The spare chamber is decompressed and
The tray is transported from the spare chamber to the processing chamber in a decompressed state.
The substrate transport method according to claim 1 or 2.
複数の貫通孔を有するトレイと、
基板が載置された前記トレイを格納する基板格納部と、
前記トレイの前記各貫通孔に対応する位置に複数の突出ピンを有する搬送アームを備えた搬送部と、
減圧可能なチャンバと、を備え、
前記搬送部は、
前記各突出ピンが対応する前記貫通孔を貫通して前記基板を支持するように前記搬送アームと前記搬送アームの上方に配置された前記トレイとを近づけて前記基板および前記トレイを前記搬送アームで支持し、
前記トレイを前記基板格納部から前記チャンバへ搬送し、
前記チャンバ内の所定位置に前記トレイを載置するために、前記突出ピンが前記基板から離れて、前記トレイが前記基板を支持するように前記搬送アームと前記トレイを離間させる、
基板搬送システム。
A tray with multiple through holes and
A board storage unit that stores the tray on which the board is placed, and
A transport unit provided with a transport arm having a plurality of protruding pins at positions corresponding to the respective through holes of the tray, and a transport unit.
With a decompressable chamber,
The transport unit
The transfer arm and the tray arranged above the transfer arm are brought close to each other so that each of the protruding pins penetrates the corresponding through hole to support the substrate, and the substrate and the tray are moved by the transfer arm. Support,
The tray is conveyed from the substrate storage to the chamber,
In order to place the tray in a predetermined position in the chamber, the protruding pin is separated from the substrate, and the transport arm and the tray are separated so that the tray supports the substrate.
Board transfer system.
前記基板は、前記トレイに載置される側の面に、外縁部と、前記外縁部の内側に設けられた凹部とを有し、
前記搬送部は、
前記各突出ピンが対応する前記貫通孔を貫通して前記基板の前記外縁部を支持するように前記搬送アームを前記トレイに近づけ、
前記突出ピンが前記基板の前記外縁部から離れて前記トレイが前記基板の前記外縁部を支持するように前記搬送アームを前記トレイから離間させる、
請求項4に記載の基板搬送システム。
The substrate has an outer edge portion and a recess provided inside the outer edge portion on a surface on the side on which the tray is placed.
The transport unit
The transport arm is brought closer to the tray so that each of the protruding pins penetrates the corresponding through hole and supports the outer edge portion of the substrate.
The transport arm is separated from the tray so that the protruding pin is separated from the outer edge portion of the substrate and the tray supports the outer edge portion of the substrate.
The substrate transfer system according to claim 4.
前記チャンバは、予備チャンバおよび処理チャンバを含み、
前記搬送部は、前記トレイを大気圧状態にある前記予備チャンバへ搬送し、前記予備チャンバが減圧された後、前記トレイを前記予備チャンバから減圧状態にある前記処理チャンバへ搬送する、
請求項4または5に記載の基板搬送システム。
The chamber includes a spare chamber and a processing chamber.
The transport unit transports the tray to the spare chamber in the atmospheric pressure state, and after the spare chamber is decompressed, transports the tray from the spare chamber to the processing chamber in the depressurized state.
The substrate transfer system according to claim 4 or 5.
前記突出ピンの外径は前記貫通孔の内径より小さく、前記突出ピンの長さは前記トレイの厚みより大きい、
請求項4〜6のいずれか1項に記載の基板搬送システム。


The outer diameter of the protruding pin is smaller than the inner diameter of the through hole, and the length of the protruding pin is larger than the thickness of the tray.
The substrate transfer system according to any one of claims 4 to 6.


JP2019082469A 2019-04-24 2019-04-24 SUBSTRATE TRANSFER SYSTEM AND SUBSTRATE TRANSFER METHOD Active JP7233025B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019082469A JP7233025B2 (en) 2019-04-24 2019-04-24 SUBSTRATE TRANSFER SYSTEM AND SUBSTRATE TRANSFER METHOD

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019082469A JP7233025B2 (en) 2019-04-24 2019-04-24 SUBSTRATE TRANSFER SYSTEM AND SUBSTRATE TRANSFER METHOD

Publications (2)

Publication Number Publication Date
JP2020181860A true JP2020181860A (en) 2020-11-05
JP7233025B2 JP7233025B2 (en) 2023-03-06

Family

ID=73024861

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019082469A Active JP7233025B2 (en) 2019-04-24 2019-04-24 SUBSTRATE TRANSFER SYSTEM AND SUBSTRATE TRANSFER METHOD

Country Status (1)

Country Link
JP (1) JP7233025B2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6445543A (en) * 1987-08-17 1989-02-20 Toshiba Corp Transfer device
JPH11124675A (en) * 1997-10-16 1999-05-11 Sharp Corp Plasma treating device
JP2003059998A (en) * 2001-08-13 2003-02-28 Anelva Corp Tray-type multi-chamber substrate treating system and tray-type substrate treating system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6445543A (en) * 1987-08-17 1989-02-20 Toshiba Corp Transfer device
JPH11124675A (en) * 1997-10-16 1999-05-11 Sharp Corp Plasma treating device
JP2003059998A (en) * 2001-08-13 2003-02-28 Anelva Corp Tray-type multi-chamber substrate treating system and tray-type substrate treating system

Also Published As

Publication number Publication date
JP7233025B2 (en) 2023-03-06

Similar Documents

Publication Publication Date Title
KR101915441B1 (en) Bonding method and computer storage medium and bonding apparatus and bonding system
JP3892703B2 (en) Semiconductor substrate jig and semiconductor device manufacturing method using the same
KR102008580B1 (en) Chucking System Of Adhesive Chuck and Substrate By Gas Pressure Difference
JP4570037B2 (en) Substrate transfer system
JP6723131B2 (en) Substrate transfer device and substrate transfer method
US9064910B2 (en) Bonding unit control unit and multi-layer bonding method
US10607870B2 (en) Substrate carrier for active/passive bonding and de-bonding of a substrate
TW202137326A (en) Substrate support, plasma processing system, and method of placing annular member
KR20210111700A (en) Plasma processing system and edge ring replacement method
JP6014302B2 (en) Bonding apparatus and bonding method
TWI540661B (en) Bonding method, computer storage medium and bonding system
TW202137325A (en) Plasma processing system and edge ring replacement method
KR102404840B1 (en) Carrying method and bonding apparatus
CN110660723B (en) Manipulator, bonding cavity, wafer bonding system and bonding method
JP2020181860A (en) Board conveyance system and board conveyance method
KR101710221B1 (en) Substrate processing apparatus and substrate processing method
JP2019026465A (en) Conveyance system and substrate processing system
JP5447110B2 (en) Substrate laminating apparatus, laminated semiconductor manufacturing method, laminated semiconductor, and substrate laminating method
TWI762698B (en) Substrate processing method
JP5749002B2 (en) Load lock device and vacuum processing device
JP2011138844A (en) Vacuum processing apparatus, and method of manufacturing semiconductor device
CN106206392B (en) Die positioning and arranging equipment and die positioning and arranging method
KR101571812B1 (en) Apparatus for dechucking substrate, method for dechucking substrate, apparatus for processing substrate and method of processing substrate using the same
JP5917750B2 (en) Load lock device and vacuum processing device
KR20240020656A (en) Work processing method and work processing apparatus

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220203

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230124

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230125

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230209

R151 Written notification of patent or utility model registration

Ref document number: 7233025

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151