JP2020180340A - Vapor deposition mask - Google Patents

Abstract

To provide a vapor deposition mask including a relief recessed part on the bottom surface of a frame and capable of appropriately closely contacting a pattern formation region included in a mask main body to a substrate to form a vapor deposition layer corresponding to a vapor deposition pattern consisting of a lot of independent vapor deposition through-holes on the substrate with high accuracy.SOLUTION: Each mask main body 2 is constituted to include an inner pattern formation region 8 having vapor deposition through-holes 13 and an outer bonding region 9 having an upper surface covered with a metal layer 4. An adsorption region 10 without forming a through-hole and/or a recess is provided between the pattern formation region 8 and the bonding region 9, and thereby, the mask main body 2 can be strongly attracted and held by vastly acting the magnetic attraction of a magnet chuck 49 on the outer periphery of the pattern formation region 8.SELECTED DRAWING: Figure 1

Description

The present invention relates to a vapor deposition mask in which a mask body having a vapor deposition pattern is supported by a frame. The vapor deposition mask according to the present invention is suitably used, for example, when forming a light emitting layer of an organic EL element.

An organic EL display in which a light emitting layer (deposited layer) of an organic EL element is formed on a substrate (deposited object) is manufactured by a vapor deposition mask method. For example, the applicant has previously proposed this type of vapor deposition mask. It is disclosed in Patent Document 1. As shown in FIG. 9, the vapor deposition mask 101 of Patent Document 1 includes a plurality of mask main bodies 102 arranged in a matrix, a reinforcing frame 103 arranged so as to surround each mask main body 102, and both 102. It is composed of a metal layer 104 that joins 103 in a non-separable manner. Each mask body 102 has a thin-film deposition pattern composed of a large number of independent thin-film deposition holes 105. The mask body 102, the frame body 103, and the metal layer 104 are all made of magnetic metal. When manufacturing an organic EL display, the substrate 108 is first placed on the degaussed magnet chuck 107, then the vapor deposition mask 101 is placed on the substrate 108, and then the magnet chuck 107 is magnetized. As a result, the substrate 108 and the vapor deposition mask 101 are immovably fixed on the magnet chuck 107, and by performing the vapor deposition step in this state, the vapor deposition layer corresponding to the vapor deposition through holes 105 of the mask main body 102 is formed on the substrate 108. It is formed. A relief recess 109 is formed on the lower side of the frame 103 and the metal layer 104 near the frame, and when the vapor deposition mask 101 is fixed, the vapor deposition mask 101 and the substrate 108 come into contact with each other to damage the substrate surface. I'm preventing that.

JP-A-2017-210633

Since the frame body 103 arranged so as to surround the mask body 102 is for reinforcement, its thickness is set to be sufficiently thicker than that of the mask body 102. For example, the thickness of the mask body 102 is about 8 μm, while the thickness of the frame 103 is set to about 1 mm. Further, the metal layer 104 is formed up to the vicinity of the vapor deposition through hole 105. For example, the distance W4 of the metal layer 104 extending inward from the frame 103 is about 1.2 mm, whereas the distance W5 from the end of the metal layer 104 to the formed region 106 of the vapor deposition through hole 105 is 0. It is set to .2 mm (see FIG. 10). When the vapor deposition mask 101 and the substrate 108 are fixed by the magnet chuck 107, a larger magnetic attraction force acts on the frame body 103 having a thickness larger than that of the mask body 102. Further, since the volume of the mask main body 102 is reduced by the amount of the vapor deposition through hole 105 in the formed region 106 of the vapor deposition through hole 105, the magnetic attraction force acting on the region 106 is weakened. Therefore, the frame body 103 sinks to the relief recess 109 side, the metal layer 104 on the extending end side warps up with the edge F of the relief recess 109 as a fulcrum as shown in the enlarged view of FIG. 9, and the mask body 2 becomes It may come up. At this time, when the formed region 106 of the thin-film deposition hole 105 is lifted, a gap is generated between the substrate 108 and the thin-film deposition hole 105, so that the thin-film deposition layer is formed as if it is largely blurred from an appropriate shape, and the vapor deposition pattern is followed. A thin film layer cannot be obtained. In particular, bleeding becomes large on the outer edge side of the formed region 106 of the thin-film deposition through hole 105.

According to the present invention, in a thin-film deposition mask provided with a relief recess on the lower surface of the frame, a thin-film deposition layer corresponding to a thin-film deposition pattern composed of a large number of independent vapor-film deposition holes by appropriately adhering the pattern-forming region of the mask body to the substrate The purpose is to enable high-precision formation on the substrate.

In the present invention, a mask body 2 having a vapor deposition pattern composed of a large number of independent vapor deposition through holes 13, a reinforcing frame 3 having a mask opening 5 in which the mask body 2 is arranged, and an inner peripheral surface 5a of the mask opening 5 A metal layer 4 that extends from the mask body 2 toward the center of the opening and joins the mask body 2 and the frame body 3 in a non-separable manner, and at least an escape that is formed by being recessed upward on the lower surface on which the frame body 3 is arranged. A vapor deposition mask having a recess 50 is targeted. Each mask body 2 includes an inner pattern forming region 8 on which a thin-film deposition through hole 13 is formed, and an outer joining region 9 whose upper surface is covered with a metal layer 4. Then, a suction region 10 in which a through hole and / or a dent is not formed is provided between the pattern forming region 8 and the joining region 9.

The metal layer 4 includes a joint portion 4b extending inward from the inner peripheral surface 5a of the mask opening 5, and the joint portion 4b from the inner peripheral surface 5a of the mask opening 5 to the extending tip 4c of the metal layer 4. When the distance between the two is W1 and the distance of the suction region 10 from the extending tip 4c of the metal layer 4 to the pattern forming region 8 is W2, the distance W1 of the joint portion 4b and the distance W2 of the suction region 10 are of the formula. It is set to satisfy (W2 / (W1 + W2) = 0.4 to 0.8).

The distance W1 of the joint portion 4b and the distance W2 of the adsorption region 10 are set so as to satisfy the inequality (W2 ≧ W1).

When the distance of the joint region 9 of the mask body 2 is W3, the distance W3 of the joint region 9 and the distance W2 of the suction region 10 are set so as to satisfy the inequality (W3 ≦ W2).

When the thickness of the adsorption region 10 is T1 and the thickness of the bonding region 9 including the metal layer 4 is T2, the thickness T1 of the adsorption region 10 and the thickness T2 of the bonding region 9 satisfy the inequality (T1 <T2). It is set to do.

In the vapor deposition mask according to the present invention, each mask body 2 is configured so as to include an inner pattern forming region 8 in which the vapor deposition through holes 13 are formed and an outer bonding region 9 whose upper surface is covered with the metal layer 4. An adsorption region 10 in which no through holes and / or dents are formed is provided between the pattern forming region 8 and the joining region 9. When the suction region 10 is provided on the outside of the pattern forming region 8 in this way, the magnetic attraction force of the magnet chuck 49 is greatly exerted on the outer periphery of the pattern formation region 8 to firmly attract and hold the mask body 2. Further, by firmly adsorbing and holding the mask body 2, the frame body 3 can be prevented from sinking to the relief recess 50 side, so that the mask body 2 is derived from the fact that the frame body 3 sinks to the relief recess 50 side. Can eliminate the floating of. Even if the frame body 3 sinks to the escape recess 50 side and the suction region 10 near the metal layer 4 rises, the suction force acting on the suction region 10 causes the mask body 2 to be reapplied in the middle of the region 10. It can be brought into close contact with the substrate 48 to prevent the formation of a gap between the mask body 2 and the substrate 48 in the pattern forming region 8. As described above, according to the present invention, the pattern forming region 8 provided in the mask main body 2 is appropriately brought into close contact with the substrate 48 to correspond to a vapor deposition pattern composed of a large number of independent vapor deposition through holes 13 on the substrate 48. The vapor deposition layer can be formed with high accuracy.

When the distance of the joint portion 4b is W1 and the distance of the adsorption region 10 is W2, the distance W1 and the distance W2 satisfy the formula (W2 / (W1 + W2) = 0.4 to 0.8). If it is set, the suction region 10 having a sufficient magnetic suction force can be formed around the pattern forming region 8, so that the mask body 2 is accurately adhered to the substrate 48 by the magnetic suction force acting on the suction region 10. be able to.

The relationship between the distance W1 of the joint portion 4b and the distance W2 of the adsorption region 10 is set so as to satisfy the equation (W2 / (W1 + W2) = 0.4 to 0.8) for the following reasons. When the value obtained by dividing the distance W2 by the distance W1 + W2 is less than 0.4, the magnetic adsorption force does not sufficiently act on the adsorption region 10 because the adsorption region 10 is small, and the pattern formation region 8 floats away from the substrate 48. There is a risk. When the value obtained by dividing the distance W2 by the distance W1 + W2 exceeds 0.8, the pattern forming region 8 is formed from the inner peripheral surface 5a of the mask opening 5 in relation to the size of the frame body 3 and the arrangement form of the mask body 2. When the distance (W1 + W2) is not long, the bonding region 9 of the mask body 2 becomes small, and the bonding strength between the metal layer 4 and the mask body 2 cannot be sufficiently secured.

It is desirable that the distance W1 of the joint portion 4b and the distance W2 of the adsorption region 10 are set so as to satisfy the inequality (W2 ≧ W1). According to this, since half or more of the distance (W1 + W2) from the frame body 3 to the vapor deposition through hole 13 can be set as the suction region 10, the suction region 10 on which a sufficient magnetic attraction force acts is formed to form a mask. The main body 2 can be firmly adsorbed and held.

When the distance W3 of the bonding region 9 and the distance W2 of the suction region 10 are set so as to satisfy the inequality (W3 ≦ W2), the ratio occupied by the suction region 10 in the mask body 2 excluding the pattern forming region 8 is By increasing the size, it is possible to form an adsorption region 10 on which a sufficient magnetic attraction force acts.

When the thickness T1 of the adsorption region 10 and the thickness T2 of the bonding region 9 including the metal layer 4 are set so as to satisfy the inequality (T1 <T2), the magnetism acting on the bonding region 9 including the metal layer 4 The suction force can prevent the frame body 3 from sinking to the escape recess 50 side and prevent the mask body 2 from rising.

It is a vertical sectional front view which shows the main part of the vapor deposition mask which concerns on this invention. It is a perspective view which shows the whole of the vapor deposition mask. It is a longitudinal front view of the vapor deposition mask. It is a top view which shows the main part of the vapor deposition mask. It is explanatory drawing which shows the first stage of the manufacturing method of the vapor deposition mask. It is explanatory drawing which shows the interruption of the manufacturing method of a thin-film deposition mask. It is explanatory drawing which shows the latter stage of the manufacturing method of the vapor deposition mask. It is a vertical sectional front view which shows another Example of the formation area of the adhesion plating layer. It is a longitudinal front view for demonstrating the problem of the conventional thin film deposition mask. It is a longitudinal front view which shows the joining part of the conventional thin-film deposition mask.

(Examples) FIGS. 1 to 7 show examples in which the vapor deposition mask according to the present invention is applied to a vapor deposition mask used in the manufacture of an organic EL display. It should be noted that the dimensions such as the thickness and the width in each figure of the present embodiment do not show the actual state, but are schematically shown respectively.

As shown in FIGS. 2 and 3, the vapor deposition mask 1 has a plurality of mask bodies 2 (8 in this embodiment) arranged in a matrix and a reinforcing frame arranged so as to surround each mask body 2. It includes a body 3 and a metal layer 4 that inseparably and integrally joins both 2 and 3. The frame body 3 includes the same number of mask openings 5 as the mask body 2. Each mask opening 5 is formed to be one size larger than the mask main body 2, and one mask main body 2 is arranged in each mask opening 5. Each mask opening 5 of this embodiment has a length dimension in the longitudinal direction of 125 mm and a length dimension in the lateral direction of 71 mm.

As shown in FIGS. 3 and 4, each mask body 2 is formed in a rectangular shape with rounded four corners, and has an inner pattern forming region 8, an outer joining region 9, and a pattern forming region 8 and a joining region. A suction region 10 provided between the 9 and the 9 is provided. The suction region 10 is formed in a square frame shape and surrounds the outside of the pattern forming region 8, and the bonding region 9 is formed in a square frame shape and surrounds the outside of the suction region 10. A vapor deposition pattern composed of a large number of independent vapor deposition holes 13 is formed in the pattern forming region 8, and a large number of joint holes 14 arranged in two rows along each side of the mask body 2 in the joint region 9. Is formed. The suction region 10 is a region having a uniform plate thickness in which no through holes or dents are formed. Each mask body 2 of this embodiment has a length dimension in the longitudinal direction of 122 mm and a length dimension in the lateral direction of 68 mm. Further, the joint region 9 has a width dimension of each side portion (distance W3 described later) of 0.65 mm, and the suction region 10 has a width dimension of each side portion (distance W2 described later) of 1.7 mm. The length dimension of the mask main body 2 in the longitudinal direction and the lateral direction corresponds to the size of the organic EL display to be manufactured. The dimensions of the mask body 2 and the dimensions of the mask opening 5 above are reference values when manufacturing an organic EL display, and the organic EL display can be used for smartphones, smart watches, head-up displays, head-mounted displays, and the like. it can.

The mask body 2 is formed by an electroforming method using an electrodeposited metal made of nickel as a material. The thickness of each mask body 2 was preferably in the range of 8 to 100 μm, and was set to 10 μm in this example. The mask body 2 can be formed of a nickel alloy such as nickel cobalt, copper, or other electrodeposited metal as a material in addition to nickel. Further, the mask body 2 may have a laminated structure of two or more layers. Specifically, for example, the mask body 2 having an upper layer composed of a glossy plating layer and a lower layer composed of a matte plating layer is formed, and each layer is formed. The thickness ratio of is set to, for example, upper layer: lower layer = 5: 7. In a laminated structure in which the mask body 2 has two or more layers, the order of the glossy plating layer and the matte plating layer and the thickness ratio of each layer can be freely set.

The metal layer 4 joins the mask body 2 and the frame 3 and is formed by an electroforming method using an electrodeposited metal made of nickel as a material. Specifically, the metal layer 4 has a covering portion 4a that covers the upper surface portion of the frame body 3 and a connecting portion 4b that extends continuously from the inner peripheral surface 5a of the mask opening 5 toward the opening center to the covering portion 4a. It has. The upper surface of the joint region 9 of the mask main body 2 is covered with the extending tip 4c side of the joint portion 4b, and the mask main body 2 and the frame body 3 are joined at this portion. The metal layer 4 may have a form in which the covering portion 4a is omitted. In this case, the upper surface of the frame body 3 is exposed to the outer surface of the vapor deposition mask 1.

As shown in FIG. 2, the frame body 3 includes a rectangular frame-shaped outer peripheral frame 17 and a grid frame 18 for partitioning the mask opening 5 in the outer peripheral frame 17. As shown in an enlarged manner in FIG. 3, the frame body 3 has a laminated structure, and is configured by laminating an upper frame 19 and a lower frame 20 having the same shape with an adhesive layer 21. The upper frame 19 and the lower frame 20 are formed of a metal plate material having a low coefficient of linear expansion made of an Invar material which is a nickel-iron alloy. The thickness dimensions of the upper frame 19 and the lower frame 20 of this embodiment are 0.5 mm each (the thickness dimension of the frame body 3 is 1.0 mm), and the frame body 3 is formed to be sufficiently thicker than the mask body 2. .. Further, the outer peripheral frame 17 has a width dimension of each side portion of 20 mm, and the lattice frame 18 has a width dimension of each frame portion of 10 mm. The dimensions of the frames 17 and 18 vary depending on the number of mask bodies 2 arranged, the size of the substrate 48, and the like.

The upper frame 19 and the lower frame 20 may be formed of a nickel-iron-cobalt alloy, such as a superinvar material, in addition to the above-mentioned Invar material, and the thickness dimensions of the upper frame 19 and the lower frame 20 are different. You may. Further, the frame body 3 may have a laminated structure of three or more layers or a single layer structure in addition to the two-layer structure of the upper frame 19 and the lower frame 20, and the frame body 3 having the upper frame 19 and the lower frame 20 is 2 A four-layer structure in which layers are laminated may be adopted. As the adhesive layer 21, a sheet-shaped uncured photosensitive dry film resist, various commercially available adhesives, or the like can be used.

An example of the method for manufacturing the vapor deposition mask 1 according to this embodiment is shown in FIGS. 5 to 7. First, as shown in FIG. 5A, a negative type photoresist layer 25 is formed on the surface of an electroformed mother mold 24 made of, for example, stainless steel or brass, which has conductivity. Next, a pattern film 26 made of a glass mask is brought into close contact with the photoresist layer 25 to obtain a patterning pre-stage body 27. The pattern film 26 is formed with a translucent hole 26a corresponding to the vapor deposition through hole 13 of the mask main body 2 and a translucent hole 26b corresponding to the joint through hole 14 of the main body 2. Further, the pattern film 26 is formed with a light-transmitting frame 26c corresponding to the outer circumference of the mask body 2.

Next, the inside of the furnace of the ultraviolet irradiation device provided with the ultraviolet lamp 28 is preheated to the temperature inside the furnace during the exposure work. When the preheating is completed, the obtained patterning pre-stage body 27 is housed in the furnace of the ultraviolet irradiation device, the patterning pre-stage body 27 is acclimatized to the temperature inside the furnace, and then the ultraviolet lamp 28 irradiates the ultraviolet light. , The photoresist layer 25 is exposed via the pattern film 26. As shown in FIG. 5 (b), the patterning pre-stage 27 after exposure is taken out, the pattern film 26 is removed from the photoresist layer 25, and the unexposed portion of the photoresist layer 25 is dissolved and removed (developed). The primary pattern resist 29 is formed on the electroformed mother mold 24. The primary pattern resist 29 is composed of resist bodies 29a to 29c corresponding to the light-transmitting holes 26a and 26b of the pattern film 26 and the light-transmitting frame 26c.

Next, as shown in FIG. 5C, the surface of the electroformed mother mold 24 not covered with the resist bodies 29a to 29c is electroformed so that the surface of the electroformed mother mold 24 is within the height range of the resist bodies 29a to 29c. The primary electroformed layer 30 is formed. The primary electroformed layer 30 is composed of a plurality of mask bodies 2 constituting the finished product of the vapor deposition mask 1 and a frame support portion 31 that is removed before the completion thereof. After forming the primary electroformed layer 30, the primary pattern resist 29 is melted and removed as shown in FIG. 5D. As a result, the vapor deposition through holes 13 and the joint through holes 14 of the mask body 2 appear.

In the next step, an adhesion plating layer 34 (see FIG. 3) for increasing the bonding strength (adhesion) of the metal layer 4 to the mask body 2 is formed. In the mask body 2 of this embodiment, the adhesion plating layer 34 is formed on the upper surface and the outer peripheral surface of the bonding region 9 and the inner peripheral surface of the bonding through hole 14. The close contact plating layer 34 is made of nickel, copper, or the like as a material, and is formed sufficiently thinner than the primary electroplating layer 30 by strike plating or matte plating.

As a procedure for forming the adhesion plating layer 34, first, as shown in FIG. 6A, a negative type photoresist layer 35 is formed on the entire surface of the primary electroformed layer 30, and the pattern film 36 is adhered on the negative type photoresist layer 35. The pattern film 36 includes a rectangular frame-shaped non-transmissive portion 36a corresponding to the bonding region 9 of the mask main body 2 and a translucent portion 36b occupying other portions. Next, the photoresist layer 35 is exposed through the pattern film 36 by irradiating the ultraviolet light with the ultraviolet lamp 28. After the exposure, the pattern film 36 is removed from the photoresist layer 35, and the unexposed portion of the photoresist layer 35 is dissolved and removed (developed) to form the pattern resist 37 shown in FIG. 6B. The pattern resist 37 has an opening 37a that exposes the bonding region 9 of the mask body 2. That is, the pattern resist 37 covers the entire surface of the primary electroformed layer 30 excluding the formation region of the adhesion plating layer 34.

Next, by subjecting the surface of the primary electroformed layer 30 facing the opening 37a to a plating treatment (adhesion treatment), the adhesion plating layer 34 shown enlarged in FIG. 6C can be formed. The close contact plating layer 34 is inevitably formed on the surface of the electroforming mother die 24 facing the opening 37a, but the close contact plating layer 34 on the electroforming mother die 24 later attaches the mask body 2 to the electroforming mother die 24. It is preferable to make the area as small as possible because it hinders the peeling from 24. When the pattern resist 37 is dissolved and removed after the adhesion plating layer 34 is formed, the state shown in FIG. 6C is obtained. Instead of forming the adhesion plating layer 34 in the bonding region 9 and the bonding through hole 14, activation treatment (adhesion treatment) such as acid immersion or electrolytic treatment may be performed. This also makes it possible to increase the bonding strength (adhesion) of the metal layer 4 to the mask body 2.

In the next step, the frame body 3 is joined to the mask body 2 of the primary electroformed layer 30 with the metal layer 4. Specifically, first, as shown in FIG. 7A, a negative type photoresist layer 40 is formed on the entire surface of the primary electroformed layer 30 on which the adhesion plating layer 34 is formed, and the pattern film 41 is adhered on the negative type photoresist layer 40. Let me. The pattern film 41 includes a rectangular light-transmitting hole 41a with rounded corners corresponding to the pattern forming region 8 and the suction region 10 of the mask body 2.

Next, the photoresist layer 40 is exposed through the pattern film 41 by irradiating the ultraviolet light with the ultraviolet lamp 28. After the exposure, the pattern film 41 is removed from the photoresist layer 40, and the unexposed portion of the photoresist layer 40 is dissolved and removed (developed) to form the secondary pattern resist 42 shown in FIG. 7B. The secondary pattern resist 42 covers the surfaces of the pattern forming region 8 and the adsorption region 10 of the mask body 2. Since the vapor-deposited through holes 13 of the pattern forming region 8 are covered with the secondary pattern resist 42, the electroforming liquid does not infiltrate into the through holes 13 during the subsequent electroforming process.

Next, as shown in FIG. 7C, the frame body 3 is placed at a predetermined position on the upper surface of the frame body support portion 31 of the primary electroformed layer 30. In a plan view, the frame body support portion 31 is formed to be slightly larger than the frame body 3. An adhesive layer 45 is preliminarily laminated on the lower surface of the frame body 3 supported by the frame body support portion 31 via a release layer 44, and the adhesive layer 45 causes the frame body 3 to the frame body support portion 31 with respect to the frame body support portion 31. It is fixed so that it cannot move. In this example, the release layer 44 was formed of nickel, and the adhesive layer 45 was formed of an unexposed photoresist layer.

Next, as shown in FIG. 7D, plating treatment is performed to form a continuous secondary electroformed layer, that is, a metal layer 4, from the surface of the frame body 3 to the mask body 2. The metal layer 4 on the surface of the primary electroformed layer 30 is formed within the height range of the secondary pattern resist 42. At this time, by forming the metal layer 4 in the joint through hole 14, the adhesion plating layer 34 is formed on the inner peripheral surface of the joint through hole 14, and the metal layer with respect to the mask body 2 is formed. The joint strength of 4 is further improved. After the electroforming process, the primary electroformed layer 30 and the metal layer 4 are peeled off from the electroformed mother mold 24. Next, the frame support portion 31 of the primary electroformed layer 30 is peeled from the frame 3 and the metal layer 4 together with the adhesive layer 45 and the release layer 44 to form a relief recess 50 described later. Finally, by removing the secondary pattern resist 42, the finished product of the vapor deposition mask 1 shown in FIG. 7 (e) can be obtained. The secondary pattern resist 42 may be removed before the primary electroformed layer 30 and the metal layer 4 are peeled off, or before the frame support portion 31, the adhesive layer 45 and the peeled layer 44 are peeled off. good.

In the completed vapor deposition mask 1 peeled from the electroformed mother mold 24, a stress that tends to shrink inward acts on each mask body 2. This is because the liquid temperature (for example, 40 to 50 ° C.) of the electroforming tank when forming the primary electroforming layer 30 including the mask body 2 is higher than room temperature. As each mask body 2 tries to contract, tensile stress acts on the frame 3 via the metal layer 4.

The vapor deposition layer (light emitting layer) is formed on the substrate (evaporation target) 48 in a state where the vapor deposition mask 1 and the substrate 48 are closely fixed in the vapor deposition apparatus. Specifically, as shown in FIG. 1, the substrate 48 is aligned and placed on the degaussed magnet chuck 49, and then the vapor deposition mask 1 is aligned and mounted on the substrate 48. By magnetizing the magnet chuck 49 in this state, the vapor deposition mask 1 and the substrate 48 are vertically laminated on the magnet chuck 49, and the mask main body 2 is fixed in a state of being in close contact with the surface of the substrate 48 and immovably. Will be done. When both 1.48 are fixed, a relief recess is provided under the frame 3 and the metal layer 4 near the frame 3 in order to prevent the lower surface of the vapor deposition mask 1 other than the mask body 2 from coming into contact with the substrate 48 as much as possible. 50 is formed as a recess upward. The relief recess 50 is provided to prevent the surface of the substrate 48 from being scratched due to contact with anything other than the mask body 2.

When the magnet chuck 49 is magnetized, a larger magnetic attraction force acts on the frame body 3 having a thickness larger than that of the mask body 2. Therefore, the frame body 3 tries to sink to the escape recess 50 side, but as described above, since the mask main body 2 of this embodiment is provided with the suction region 10 outside the pattern forming region 8. The magnetic attraction force of the magnet chuck 49 is greatly applied to the outer periphery of the pattern forming region 8 to attract the mask body 2 to the magnet chuck 49 and firmly attract and hold the mask body 2. Further, by firmly adsorbing and holding the mask body 2, the frame body 3 can be prevented from sinking to the relief recess 50 side, so that the mask body 2 is derived from the fact that the frame body 3 sinks to the relief recess 50 side. Can eliminate the floating of. Even if the frame body 3 sinks to the escape recess 50 side and the suction region 10 near the metal layer 4 rises, the magnetic attraction force acting on the suction region 10 causes the mask body 2 to reappear in the middle of the region 10. Can be brought into close contact with the substrate 48 to prevent the formation of a gap between the mask body 2 and the substrate 48 in the pattern forming region 8. As described above, according to the present embodiment, the pattern forming region 8 provided in the mask main body 2 is appropriately brought into close contact with the substrate 48 to correspond to a vapor deposition pattern composed of a large number of independent vapor deposition through holes 13 on the substrate 48. The thin-film deposition layer can be formed with high accuracy.

The distance from the joint portion 4b included in the metal layer 4, that is, the inner peripheral surface 5a of the mask opening 5 to the extending tip 4c of the metal layer 4 is W1, and the suction region 10, that is, the pattern forming region from the extending tip 4c of the metal layer 4. When the distance to 8 is W2, the distance W1 of the joint portion 4b and the distance W2 of the adsorption region 10 are set so as to satisfy the equation (W2 / (W1 + W2) = 0.4 to 0.8). There is. When the distance W1 and the distance W2 are set so as to satisfy the equation (W2 / (W1 + W2) = 0.4 to 0.8) in this way, sufficient magnetism is provided around the pattern forming region 8. Since the suction region 10 where the suction force can be obtained can be formed, the mask body 2 can be accurately adhered to the substrate 48 by the magnetic suction force of the magnet chuck 49 acting on the suction region 10.

As described above, the relationship between the distance W1 of the joint portion 4b and the distance W2 of the adsorption region 10 is set so as to satisfy the equation (W2 / (W1 + W2) = 0.4 to 0.8) as follows. It depends on the reason. When the value obtained by dividing the distance W2 by the distance W1 + W2 is less than 0.4, the magnetic attraction force of the magnet chuck 49 does not sufficiently act on the suction region 10 because the suction region 10 is small, and the pattern forming region 8 becomes the substrate. There is a risk of floating away from 48. Further, when the value obtained by dividing the distance W2 by the distance W1 + W2 exceeds 0.8, the mask body 2 is joined when the distance W1 cannot be formed long due to the relationship between the size of the frame 3 and the number of arranged mask bodies 2. The region 9 becomes small, and the joint strength between the metal layer 4 and the mask body 2 cannot be sufficiently secured.

It is desirable that the distance W1 of the joint portion 4b and the distance W2 of the adsorption region 10 are set so as to satisfy the inequality (W2 ≧ W1). According to this, since half or more of the distance (W1 + W2) from the frame body 3 to the vapor deposition through hole 13 can be set as the suction region 10, the suction region 10 on which a sufficient magnetic attraction force acts is formed, and the magnet is formed. The magnetic attraction force of the chuck 49 can reliably attract and hold the mask body 2 to the substrate 48 to bring it into close contact with the substrate 48. When the distance W1 of the joint portion 4b is set to 1.0 mm or more and 1.5 mm or less, the distance W2 of the adsorption region 10 is preferably 1.5 mm or more and 2.0 mm or less. In this embodiment, the distance W1 is 1.2 mm and the distance W2 is 1.7 mm.

The distance (W1 + W2) from the inner peripheral surface 5a of the mask opening 5 to the pattern forming region 8 is preferably set to 2.5 mm or more and 10.0 mm or less. This is due to the following reasons. If the distance (W1 + W2) is less than 2.5 mm, the bonding region 9 of the mask body 2 becomes small, the bonding strength between the metal layer 4 and the mask body 2 cannot be sufficiently secured, and the adsorption region 10 is further formed. Since it is small, the magnetic attraction force of the magnet chuck 49 does not sufficiently act on the adsorption region 10, and the mask body 2 may float away from the substrate 48. Further, when the distance (W1 + W2) exceeds 10.0 mm, the vapor deposition mask 1 becomes large and the yield of the substrate 48 deteriorates. On the other hand, in order to obtain the substrate 48 having a good yield, the width dimensions of the outer peripheral frame 17 and the lattice frame 18 of the frame body 3 have to be reduced, so that the structural strength of the frame body 3 is lowered and the vapor deposition mask 1 is obtained. Causes damage.

When the distance of the bonding region 9 of the mask body 2 is W3 (see FIG. 1), as described above, the distance W3 of the bonding region 9 and the distance W2 of the adsorption region 10 have an inequality (W3 ≦ W2). If it is set to be satisfactory, the ratio of the suction region 10 in the mask main body 2 excluding the pattern forming region 8 can be increased to form the suction region 10 on which a sufficient magnetic attraction force acts.

Further, when the thickness of the adsorption region 10 is T1 and the thickness of the bonding region 9 including the metal layer 4 is T2 (see FIG. 3), the thickness T1 of the adsorption region 10 and the thickness T2 of the bonding region 9 are inequality. When (T1 <T2) is set to be satisfied, the magnetic attraction force acting on the joint region 9 including the metal layer 4 suppresses the frame body 3 from sinking to the escape recess 50 side, and the mask main body. It is possible to prevent the floating of 2.

The area of the adsorption region 10 of this embodiment can be formed larger than the area of the pattern formation region 8 excluding the vapor deposition through holes 13. As described above, when the areas of the respective regions 8 and 10 satisfy the above relationship, a larger magnetic attraction force can be applied to the adsorption region 10, so that the pattern formation region 8 can be reliably eliminated.

FIG. 8 shows another embodiment of the formation region of the adhesion plating layer 34. In the close contact plating layer 34 of this embodiment, the peripheral side surface portion and the upper surface peripheral portion of the mask main body 2 are omitted as compared with the close contact plating layer 34 of the above embodiment. The adhesive plating layer 34 may be formed on the joint through hole 14 portion and the upper surface portion of the mask body 2 continuous with the joint through hole 14.

The number of mask bodies 2 and the arrangement mode of the vapor deposition mask 1 are not limited to those shown in the above examples. Further, the number of mask main bodies 2 does not have to be plural, and may be one. The dimensions of each part are not limited to those shown in the above examples. In the above embodiment, the vapor deposition mask 1 and the substrate 48 are closely fixed by magnetic adsorption, but both 1.48 can be closely fixed by electrostatic adsorption or vacuum (negative pressure) adsorption. Also in this case, the floating of the mask body 2 can be eliminated by the electrostatic suction force or the vacuum suction force acting on the suction region 10 provided on the mask body 2. Further, in the case of the frame body 3 having a large thickness dimension, the frame body 3 may sink to the escape recess 50 side due to the weight of the frame body 3 without using the close contact fixing means, and the mask body 2 may be lifted. By securing the distance W2 (adsorption region 10) from the extending tip 4c of the metal layer 4 to the pattern formation region 8, the mask body 2 is brought into close contact with the substrate 48 again in the middle of the distance W2 (adsorption region 10). It is possible to prevent the formation of a gap between the mask body 2 and the substrate 48 in the pattern forming region 8.

The vapor deposition mask 1 of the present invention is not limited to that used for manufacturing an organic EL display. Further, the mask structure of the vapor deposition mask 1 can be diverted as a screen printing mask, a solder ball mounting mask, and a solder ball adsorption mask. In the case of a screen printing mask, a group of pattern openings matching the printing pattern are formed in the pattern forming area 8, and in the case of a solder ball mounting mask, the pattern forming area 8 has a slightly larger diameter than the solder balls. A group of mounting holes is formed, and in the case of a solder ball adsorption mask, a group of mounting holes having a diameter slightly smaller than that of the solder balls is formed in the pattern forming region 8.

As a reference example capable of suppressing the lifting of the mask main body 2, it is conceivable to have a configuration in which the relief recess 50 is not provided on the lower surface side of the frame body 3 or a configuration in which a support is formed in the relief recess 50. As a specific example of the former forming method, the adhesive layer 45 and the peeling layer 44 formed on the lower surface of the frame body 3 and the frame body support portion 31 on which the frame body 3 is placed are formed on the frame body 3 and the metal layer. It is conceivable that the product remains without being removed from 4. However, the adhesive layer 45 may adversely affect the formation of the light emitting layer due to deterioration due to thin film deposition (heating). As a specific example of the latter, a support (metal body) is formed in the relief recess 50, and the lower surface of the support and the lower surface of the mask body 2 are formed so as to coincide with each other. As a method of forming such a support, as shown in FIG. 7E, after removing the frame support portion 31, the adhesive layer 45 and the peeling layer 44, a support (metal body) is separately placed in the recess 50. It is possible to form.

1 Thin-film mask 2 Mask body 4 Metal layer 4b Joint 4c Extension tip 5 Mask opening 5a Inner peripheral surface 8 Pattern formation area 9 Joint area 10 Adsorption area 13 Vapor deposition through hole 50 Relief recess W1 Distance of metal layer joint W2 Mask Distance of adsorption area of main body W3 Distance of joint area of mask body

Claims (5)

A mask body (2) having a vapor deposition pattern composed of a large number of independent vapor deposition holes (13), a reinforcing frame (3) having a mask opening (5) in which the mask body (2) is arranged, and a mask opening. A metal layer (4) extending from the inner peripheral surface (5a) of (5) toward the center of the opening and inseparably and integrally joining the mask body (2) and the frame body (3) is provided, and at least the frame is provided. A thin-film mask having a relief recess (50) formed in a recess on the lower surface on which the body (3) is arranged.
Each mask body (2) includes an inner pattern forming region (8) on which a vapor deposition through hole (13) is formed and an outer joining region (9) whose upper surface is covered with a metal layer (4).
A vapor deposition mask characterized in that an adsorption region (10) in which no through holes and / or dents are formed is provided between the pattern forming region (8) and the joining region (9). The metal layer (4) includes a joint (4b) extending inward from the inner peripheral surface (5a) of the mask opening (5).
The distance of the joint (4b) from the inner peripheral surface (5a) of the mask opening (5) to the extending tip (4c) of the metal layer (4) is (W1), and the extending tip (4c) of the metal layer (4). ) To the pattern forming region (8) as (W2), the distance (W1) of the joint portion (4b) and the distance (W2) of the adsorption region (10) are , The vapor deposition mask according to claim 1, which is set to satisfy the formula (W2 / (W1 + W2) = 0.4 to 0.8). The vapor deposition mask according to claim 2, wherein the distance (W1) of the joint portion (4b) and the distance (W2) of the adsorption region (10) are set so as to satisfy the inequality (W2 ≧ W1). When the distance of the joint region (9) of the mask body (2) is (W3), the distance (W3) of the joint region (9) and the distance (W2) of the adsorption region (10) are inequality (W3). The vapor deposition mask according to claim 3, which is set to satisfy ≦ W2). When the thickness of the adsorption region (10) is (T1) and the thickness of the bonding region (9) including the metal layer (4) is (T2), the thickness (T1) of the adsorption region (10) and the bonding region (T1) The vapor deposition mask according to any one of claims 1 to 4, wherein the thickness (T2) of 9) is set so as to satisfy the inequality (T1 <T2).

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