JP2020169945A - High-speed communication semiconductor contact and semiconductor inspection system - Google Patents

Abstract

To provide a probe pin which has a simple structure and still is desirable especially for inspecting a high-frequency semiconductor package.SOLUTION: The present invention includes: a first connection part 110 and a second connection part 120 provided in both ends; and an elastic part 130 nearly in the S-shape, the elastic part continuing from the first connection part 110 to the second connection part 120, the elastic part 130 becoming smaller due to a load between the first contact part 110 and the second contact part 120 and forming a contact part 140 by the parts opposed to each other.SELECTED DRAWING: Figure 2

Description

The present invention relates to a probe pin and a semiconductor inspection device, and more particularly to a probe pin and a semiconductor inspection device suitable for semiconductor package inspection such as a contact for high frequency semiconductor package inspection.

Patent Document 1 discloses a probe pin and an inspection unit capable of narrowing the pitch of an array. This probe pin is a plate-shaped movable pin having an elastic portion that expands and contracts along the longitudinal direction and a first contact portion and a second contact portion provided at both ends of the elastic portion in the longitudinal direction, respectively. It is provided with a conduction path forming member arranged so as to overlap in the plate thickness direction of the above. The conduction path forming member has a first contact surface and a second contact surface in contact with the first contact portion and the second contact portion, respectively, at both ends in the longitudinal direction, and the movable pin and the conduction path forming member are They are arranged so as to be relatively movable along the longitudinal direction while maintaining the contact between the first contact portion and the first contact surface and the contact between the second contact portion and the second contact surface, respectively.
JP-A-2018-48919

Here, the probe pin disclosed in Patent Document 1 has a problem that the movable pin and the conduction path forming member are separately provided, so that the configuration is complicated and the number of parts is large. In order to solve this problem, for example, it is conceivable to configure the movable pin and the conduction path in combination.

However, if the probe pin is simply configured in this way, the elastic portion has a continuous S-shape, so that the conduction path is the tip of the first contact portion-the base end of the first contact portion-the elastic portion. One end of the elastic part-the other end of the elastic part-the base end of the second contact part-the tip of the second contact part.

That is, the total length of the conduction path in this case is relatively long, such as the total length of the first contact portion + the total length of the second contact portion + the path length of the continuous S-shaped elastic portion. This is not suitable for semiconductor package inspection for high frequency applications.

Therefore, it is an object of the present invention to provide a probe pin which has a simple structure but is particularly suitable for inspection of a high frequency semiconductor package and a semiconductor inspection apparatus using the probe pin.

In order to solve the above problems, the probe pin of the present invention is used.
The first contact part and the second contact part provided at both ends, respectively,
A continuous substantially S-shaped elastic portion located between the first contact portion and the second contact portion is provided.
The elastic portion is a condition in which a contact portion is formed by the facing portion when the elastic portion is shortened between the first contact portion and the second contact portion by a load.

In the elastic portion, the portion corresponding to the contact portion constitutes a narrow portion with relatively no spacing, and the other portion constitutes a wide portion with relatively spacing, or the peripheral portion including the contact portion. It may be realized by making the thickness thinner than the thickness of other parts. This has the advantage that, for example, the contact portion is easily realized.

The narrow portion can be realized by making at least one of the facing portions convex.

Further, the elastic portion may be formed with a plurality of contact portions. This has the advantage that when a load is applied between the first contact portion and the second contact portion, the stress in the elastic portion is relaxed and the springiness is easily maintained.

Further, the elastic portion may have the contact portion formed only on one side in the width direction. This is because the conduction path becomes shorter.

The elastic part is
It is preferable that the condition is such that the stroke amount of the probe pin body under load ≥ the number of contact points of the contact portion × the total distance between the parts forming the contact portion under load when not loaded. This is because it is possible to avoid shortening the conduction path due to the unnecessary increase in the number of contacts.

Further, the semiconductor inspection apparatus of the present invention includes any of the above probe pins.

It is a schematic block diagram of the semiconductor inspection apparatus of Embodiment 1 of this invention. It is a schematic diagram of the probe pin 100 shown in FIG. It is a comparison explanatory view of the conduction path length paying attention only to the elastic part 130 shown in FIG. It is a schematic diagram of the probe pin 100 of Embodiment 2 of this invention. It is a schematic diagram of the probe pin 100 of Embodiment 3 of this invention.

100
110 1st contact part 112 Pillar part 114 Collar part 120 2nd contact part 122 Pillar part 124 Collar part 130 Elastic part 200 Socket 210 2nd board 220 1st board 230, 240 Hole 205 Through hole 500 Semiconductor inspection device

Embodiment of the invention

Hereinafter, the probe pin 100 of the embodiment of the present invention and the semiconductor inspection apparatus 500 provided with the probe pin 100 will be described with reference to the drawings.

(Embodiment 1)
FIG. 1 is a schematic configuration diagram of the semiconductor inspection apparatus 500 according to the first embodiment of the present invention. FIG. 1 shows a cross section showing a schematic configuration of a semiconductor inspection device 500 having a probe pin 100 configured in a plane and a socket 200 including a first substrate 220 and a second substrate 210. There is. For convenience of explanation, FIG. 1 shows a state in which two probe pins 100 are housed in the socket 200, but in reality, a large number of probe pins 100 are housed in the socket 200. ..

The first substrate 220 is formed with holes 230 through which the pillars 112 of the first contact portions 110 of the plurality of probe pins 100 are passed. The width and thickness of each hole 230 are larger than the width and thickness of the pillar portion 112 of the first contact portion 110 and smaller than the width and thickness of the flange portion 114 of the first contact portion 110.

In the second substrate 210, a through hole 205 through which the elastic portion 130 of the probe pin 100 is passed and the flange portion 124 of the second contact portion 120 is passed is formed at a position corresponding to each hole 230. That is, the through hole 205 includes a relatively large portion through which the elastic portion 130 is passed and a relatively narrow portion through which the pillar portion 122 of the second contact portion 120 is passed, and these stepped portions. The collar portion 124 of the second contact portion 120 can be received.

The width and thickness of the through hole 205 may be set according to the width and thickness of the elastic portion 130 and the flange portion 124. A collar portion different from the flange portion 124 may be provided near the middle of the elastic portion 130. In that case, a step for receiving the other collar portion may be provided in the through hole 205.

FIG. 2 is a schematic configuration diagram of a probe pin 100 used in the semiconductor inspection apparatus 500 shown in FIG. FIG. 2A shows a state in which the probe pin 100 is not loaded, and FIG. 2B shows a state in which the probe pin 100 is loaded.

Although slightly described with reference to FIG. 1, the probe pin 100 is roughly classified into a first contact portion 110, a second contact portion 120, and an elastic portion 130. The probe pin 100 is not limited to these, but for example, pure copper in which impurities and the like are substantially not mixed, pure silver in which impurities and the like are not substantially mixed, and copper and silver are mixed in a predetermined amount. The material can be a copper-silver alloy or the like. A method for manufacturing the probe pin 100 using a copper-silver alloy as a material will be described later.

The first contact portion 110 has a pillar portion 112 and a flange portion 114 located at the base end of the pillar portion 112. Similarly, the second contact portion 120 has a pillar portion 122 and a flange portion 124 located at the base end of the pillar portion 122. In the present embodiment, the pillar portions 112 and 122 and the flange portions 114 and 124 are integrated as described later.

The elastic portion 130 is a characteristic portion of the probe pin 100 of the present embodiment. The shape of the elastic portion 130 is a substantially continuous S-shape. Then, in the present embodiment, the elastic portion 130 constitutes a narrow portion 130a in which the vicinity of the S-shaped curved portion is relatively spaced, and a wide portion 130b in which the other portions are relatively spaced. ing. However, it is not essential that the narrow portion 130a is formed in the curved portion, and the narrow portion 130a may be formed corresponding to the portion where the contact portion 140, which will be described later, is desired to be formed.

The size of each part of the probe pin 100 is not limited to these, but can be as follows.
Pillar portion 112: width about 0.1 mm to 0.5 mm, length about 0.3 mm to 0.8 mm,
Brim part 114 :: Width about 0.5 mm to 1.5 mm, length about 0.1 mm to 0.5 mm,
Pillar portion 122: width about 0.1 mm to 0.5 mm, length about 0.3 mm to 0.8 mm,
Brim part 124 :: Width about 0.5 mm to 1.5 mm, length about 0.1 mm to 0.5 mm,
Elastic part 130: Overall width about 0.5 mm to 1.5 mm, Path length: About 3.0 mm to 10 mm, Overall length about 1.5 mm to 3.0 mm,
Probe pin 100 total thickness: about 0.05 mm to 0.2 mm.

As shown in FIG. 2B, when the elastic portion 130 has such a configuration, when the elastic portion 130 is deformed by applying a load to the probe pin 100, the wide portion 130b does not contact but is narrow. The portions 130a come into contact with each other to form the contact portion 140.

Note that FIG. 2B shows a state in which the contact portion 140 is formed by the narrow portion 130a only on one side of the elastic portion 130 along the extending direction, that is, only on the left side of the drawing. However, theoretically, the contact portion 140 is formed not only on the right side of the drawing but also by the narrow portion 130a.

However, in reality, the probe pin 100 is located in the through hole 205 and the holes 230 and 240 with some play. Therefore, although it depends on the magnitude of the load applied to the probe pin 100, the force is not evenly applied to the probe pin 100 on the left and right sides of the drawing, and the contact portion 140 is formed on only one of the left and right sides of the drawing. There are many.

If the load on the probe pin 100 is large and the amount of displacement of the probe pin 100 is large, contact portions 140 will be formed on both the left and right sides of the drawing, but in that case, the current has a small resistance. Since the current flows through the shortest path, the conduction path in this case is the same as that shown in FIG. 2 (b).

On the other hand, the contact portion 140 may be formed by the narrow portion 130a on the right side of the drawing. In this case, the conduction path is relatively longer than in the case of FIG. 2B, but shorter than the path length of the elastic portion 130. This point will be described later.

In the example shown in FIG. 2B, the conduction path is the tip of the first contact portion 110-the base end of the first contact portion 110-one end of the elastic portion 130-some contact portions 140-the other end of the elastic portion 130. -The base end of the second contact portion 120-The tip of the second contact portion 120.

That is, the total length of the conduction path in this case is the total length of the first contact portion 110 + the total length of the second contact portion 120 + the substantially total length of the elastic portion 130 under load, and is relatively short. Therefore, it is suitable for semiconductor package inspection for high frequency applications.

FIG. 3 is a comparative explanatory diagram of conduction path lengths focusing only on the elastic portion 130 of the probe pin 100 shown in FIG. When the contact portion 140 is not formed in FIG. 3A, when the contact portion 140 is formed only on the right side of the drawing in FIG. 3B, the contact portion 140 is formed on the left side of the drawing in FIG. 3C. If so, it indicates each state of.

In the example shown in FIG. 3, if the path length of the elastic portion 130 is 5T, the length of 1/2 of the S-shaped portion is approximately T.
In the case of FIG. 3A, the conduction path length of the elastic portion 130 portion is [T × 5≈5T].
In the case of FIG. 3B, the conduction path length of the elastic portion 130 portion is [T + 0.75T + 0.75T + T≈3.5T], and the conduction path length is about 30 as compared with the case of FIG. 3A. % Can be shortened,
In the case of FIG. 3C, the conduction path length of the elastic portion 130 portion is [0.75T + 0.5T + 0.75T≈2T], and the conduction path length is about 60 as compared with the case of FIG. 3A. % Can be shortened.

Therefore, in the present embodiment, when the elastic portion 130 is shortened by a load between the first contact portion 110 and the second contact portion 120, the embodiment as shown in FIG. 3 (b) or FIG. 3 (c). The narrow portion 130a (and the wide portion 130b) are determined under the condition that the contact portion 140 is formed.

For this purpose, [the stroke amount of the probe pin 100 main body under load between the first contact portion 110 and the second contact portion 120 ≥ the number of contact portions of the contact portion 140 × the total of the adjacent narrow portions 130a when no load is applied. It is preferable that the condition is such that the interval (total interval when no load is applied between adjacent narrow portions 130a, which is a portion forming the contact portion 140)] is satisfied.

Therefore, when the size of each part of the probe pin 100 is the above-mentioned example, the stroke amount of the probe pin 100 main body under load between the first contact part 110 and the second contact part 120 is, for example, 0. Since it can be about 2 mm, the number of contact portions in the case of FIG. 3C is 2, for example, 0.1 mm between the adjacent narrow portions 130a and 0.2 mm between the adjacent wide portions 130b. can do.

Next, a method of manufacturing the probe pin 100 when the material is a copper-silver alloy will be described. First, for example, a commercially available electrolytic copper or oxygen-free copper in the form of a strip of 10 mm × 30 mm × 50 mm is prepared. Then, granular silver having a rough primary diameter of about 2 mm to 3 mm is prepared.

Then, silver is added to copper in the range of 0.5 wt% -15 wt%, more preferably 2 wt% -10 wt%. Then, the copper after adding this silver is put into a melting furnace such as a high-frequency or low-frequency vacuum melting furnace including a Tanman furnace, and the melting furnace is turned on to raise the temperature to, for example, about 1200 ° C., and the copper and silver are combined. Is cast by sufficiently dissolving. In this way, a copper-silver alloy ingot is manufactured.

Then, the copper-silver alloy ingot is subjected to solution heat treatment. At this time, the copper-silver alloy can be cast in the atmosphere, but it can also be cast in an inert atmosphere such as nitrogen gas or argon gas. In the former case, since the surface of the copper-silver alloy ingot is oxidized, the oxidized portion is ground. On the other hand, in the latter case, the surface grinding treatment of the copper-silver alloy ingot becomes unnecessary.

After the solution heat treatment is applied to the copper-silver alloy, cold rolling is performed, and for example, the precipitation heat treatment is performed at 350 ° C. to 550 ° C. Next, as is known, the photosensitivity of silver iodide, silver bromide, acrylic, etc. to the copper-silver alloy plate cut out from the copper-silver alloy body after the precipitation heat treatment corresponding to the thickness of the probe pin 100. The substance is applied by spraying, impregnation, etc.

At this time, if necessary, a coupling agent may be applied to the copper-silver alloy body prior to the application of the photosensitive substance to improve the adhesion of the photosensitive substance. Further, the photosensitive substance may be solidified by performing a prebaking treatment in which the copper-silver alloy body coated with the photosensitive substance is heated at a temperature of about 100 ° C. to 400 ° C. for a predetermined time.

Next, a mask pattern having a shape corresponding to the shape of the probe pin 100 is formed on the copper-silver alloy plate. The method for forming the mask pattern is not particularly limited, and any of known plating methods such as electrolytic plating, electroless plating, hot dip galvanizing, and vacuum vapor deposition may be adopted.

The metal film formed by plating may have a thickness of about 0.5 μm to 5.0 μm, and nickel, chromium, copper, aluminum or the like can be used as the material thereof. The mask pattern may be either a positive type or a negative type.

Subsequently, the copper-silver alloy plate is exposed by an exposure apparatus (not shown). The exposure apparatus may be capable of irradiating ultraviolet light having a wavelength of about 360 nm to 440 nm (for example, 390 nm) and an output of about 150 W. Specifically, the exposure apparatus is not limited to this, and a xenon lamp, a high-pressure mercury lamp, or the like can be used.

Although only one exposure apparatus is provided here, it is possible to shorten the exposure time by providing a plurality of exposure apparatus. The distance between the exposure apparatus and the copper-silver alloy plate may be about 20 cm to 50 cm under the above-mentioned ultraviolet light irradiation conditions.

Subsequently, in order to remove excess photosensitive material from the copper-silver alloy plate that has been exposed using the exposure apparatus, the copper-silver alloy plate is put into a developing solution. The developing solution may be selected according to the photosensitive material, but a 2.38 wt% aqueous solution of TMAH (tetra-methyl-ammonium-hydroxide), which is an organic alkali, can be used.

Then, after the desired rinsing treatment, etching is performed with an etching solution suitable for etching copper alloys, such as ferric chloride having a specific gravity of about 1.2 to 1.8, a mixed solution of ammonia persulfate and mercuric chloride. Process. Alternatively, a small amount (for example, about 5%) of an etching solution suitable for etching silver, such as a ferric nitrate solution having the same specific gravity, can be added.

By doing so, even if silver lumps or the like are generated at the time of melting, it is possible to prevent the silver lumps from remaining on the surface of the copper-silver alloy body after the etching treatment. However, if the amount of ferric nitrate added is large, the proportion of silver on the surface of the copper-silver alloy plate after the etching treatment is small, and the surface strength of the probe pin 100 is lowered, which is not preferable.

The impregnation time of the copper-silver alloy plate into the etching solution may be determined according to the material, thickness, etc. of the copper-silver alloy plate, but is generally 2 minutes to 15 minutes, for example, 10 minutes or less. .. By the above steps, the probe pin 100 having a desired shape can be manufactured from the copper-silver alloy plate.

If the surface of the probe pin 100 is coated with carbon such as graphene, nanosilver, or the like by electrolytic plating, vacuum deposition, electrostatic spray, or the like to a thickness of about 2 μm to 3 μm, the surface is further conductive. The properties can be improved, and the allowable current of the probe pin 100 can be improved.

(Embodiment 2)
FIG. 4 is a schematic view of the probe pin 100 according to the second embodiment of the present invention. The probe pin 100 shown in FIG. 4 constitutes a narrow portion 130c in which the width of the peripheral portion including the contact portion 140 is relatively small, and constitutes a wide portion 130d in which the width of the other portion is relatively large.

As shown in FIG. 4, when the elastic portion 130 has such a configuration, when the elastic portion 130 is deformed by applying a load to the probe pin 100, the wide portion 130b does not contact, but the narrow portion 130a contacts. The contact portion 140 is formed.

Therefore, also in the case of the probe pin 100 shown in FIG. 4, the conductive path can be shortened as in the case of the first embodiment. In order to manufacture the probe pin 100 shown in FIG. 4, it is sufficient to simply change the mask pattern to a shape corresponding to the shape of the probe pin 100 shown in FIG. 4, and otherwise adopt the method described in the first embodiment. ..

As the socket 200, the one shown in FIG. 1 or a similar one can be adopted.

(Embodiment 3)
FIG. 5 is a schematic view of the probe pin 100 according to the third embodiment of the present invention. The probe pin 100 shown in FIG. 5 has a configuration in which convex portions 130e and 130f are provided at a portion of the elastic portion 130 where the contact portion 140 is desired to be formed.

As shown in FIG. 5, when the elastic portion 130 has such a configuration, when a load is applied to the probe pin 100 and the elastic portion 130 is deformed, the convex portions 130e and 130f come into contact with each other and the contact portions. Is formed. It should be noted that both of the convex portions 130e and 130f may not be formed, and only one of them may be used.

In FIG. 2B, the contact portion 140 is formed by the narrow portion 130a on the left side of the drawing, but theoretically, the contact portion is also formed by the narrow portion 130a on the right side of the drawing.

Therefore, also in the case of the probe pin 100 shown in FIG. 5, the conductive path can be shortened as in the case of the first embodiment. In order to manufacture the probe pin 100 shown in FIG. 5, it is sufficient to simply change the mask pattern to a shape corresponding to the shape of the probe pin 100 shown in FIG. 5, and otherwise adopt the method described in the first embodiment. ..

As the socket 200, the one shown in FIG. 1 or a similar one can be adopted.

As described above, according to each embodiment of the present invention, it is possible to shorten the conductive path in the probe pin 100. Therefore, the semiconductor inspection device 500 using this type of probe pin 100 is particularly suitable for inspection of high-frequency semiconductor packages.

Claims (8)

The first contact part and the second contact part provided at both ends, respectively,
A continuous substantially S-shaped elastic portion located between the first contact portion and the second contact portion is provided.
The elastic portion is a probe pin under the condition that a contact portion is formed by the facing portion when the elastic portion is shortened between the first contact portion and the second contact portion by a load. The probe pin according to claim 1, wherein a portion corresponding to the contact portion constitutes a narrow portion having a relatively narrow interval, and the other portion constitutes a wide portion having a relatively wide interval. The probe pin according to claim 1, wherein the thickness of the peripheral portion including the contact portion is made thinner than the thickness of the other portion. The probe pin according to claim 2, wherein the elastic portion includes a narrow portion in which a portion corresponding to the contact portion is relatively narrowly spaced, and at least one of the opposed portions is convex in the narrow portion. The probe pin according to claim 1, wherein a plurality of contact portions are formed in the elastic portion. The probe pin according to claim 1, wherein the elastic portion has the contact portion formed only on one side along the extending direction thereof. The elastic part is
The probe pin according to claim 1, wherein the stroke amount of the probe pin main body under load ≥ the number of contact points of the contact portion × the total distance between the parts forming the contact portion under load when not loaded. A device for semiconductor inspection, comprising the probe pin according to any one of claims 1 to 7.

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