JP2020166178A - 表示装置 - Google Patents
表示装置 Download PDFInfo
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- JP2020166178A JP2020166178A JP2019067936A JP2019067936A JP2020166178A JP 2020166178 A JP2020166178 A JP 2020166178A JP 2019067936 A JP2019067936 A JP 2019067936A JP 2019067936 A JP2019067936 A JP 2019067936A JP 2020166178 A JP2020166178 A JP 2020166178A
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- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims description 80
- 239000002184 metal Substances 0.000 claims description 80
- 239000004065 semiconductor Substances 0.000 claims description 60
- 238000002834 transmittance Methods 0.000 claims description 11
- 230000006866 deterioration Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 139
- 239000010408 film Substances 0.000 description 67
- 230000002093 peripheral effect Effects 0.000 description 14
- ADHFMENDOUEJRK-UHFFFAOYSA-N 9-[(4-fluorophenyl)methyl]-n-hydroxypyrido[3,4-b]indole-3-carboxamide Chemical compound C1=NC(C(=O)NO)=CC(C2=CC=CC=C22)=C1N2CC1=CC=C(F)C=C1 ADHFMENDOUEJRK-UHFFFAOYSA-N 0.000 description 13
- 241001482237 Pica Species 0.000 description 13
- 239000010936 titanium Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 241000750042 Vini Species 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HMERQROICABIOC-UHFFFAOYSA-N [O-2].[Zn+2].[Sn+2]=O.[In+3] Chemical compound [O-2].[Zn+2].[Sn+2]=O.[In+3] HMERQROICABIOC-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002646 carbon nanobud Substances 0.000 description 1
- 229910021394 carbon nanobud Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Control Of El Displays (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
Description
図1は、第1実施形態に係る表示装置を模式的に示す平面図である。図1に示すように、表示装置1は、アレイ基板2と、画素Pixと、駆動回路12と、駆動IC(Integrated Circuit)210と、カソード配線60と、を含む。アレイ基板2は、各画素Pixを駆動するための駆動回路基板であり、バックプレーン又はアクティブマトリックス基板とも呼ばれる。アレイ基板2は、基板21、複数のトランジスタ、複数の容量及び各種配線等を有する。
図9は、第2実施形態に係る表示装置において、隣り合う2つの画素を模式的に示す平面図である。なお、以下の説明では、上述した実施形態で説明したものと同じ構成要素には同一の符号を付して重複する説明は省略する。
2 アレイ基板
3、3R、3G、3B 発光素子
5 円偏光板
11、Pix 画素
11R 第1画素
11G 第2画素
11B 第3画素
12 駆動回路
21 基板
22 カソード電極
23 アノード電極
24 接続電極
26 対向電極
27 素子絶縁膜
32 アノード端子
33 カソード端子
60 カソード配線
61、65、71、75、79 半導体層
90 アンダーコート膜
210 駆動IC
SST 書込トランジスタ
IST 初期化トランジスタ
DRT 駆動トランジスタ
BG 発光制御走査線
IG 初期化制御走査線
SG 書込制御走査線
RG リセット制御走査線
PVDD アノード電源電位
PVSS カソード電源電位
L1 アノード電源線
L2 映像信号線
L3 リセット信号線
L4 初期化信号線
L10 カソード電源線
L11 重畳配線
ML1 第1金属層
ML2 第2金属層
ML3 第3金属層
Claims (10)
- 基板と、
前記基板に設けられた複数の第1画素及び第2画素と、
複数の前記第1画素及び前記第2画素の各々に設けられた複数の無機発光素子と、
前記第1画素及び前記第2画素のそれぞれに信号を供給する複数の信号線と、
前記第1画素及び前記第2画素のそれぞれに電源電位を供給する複数の電源線と、を有し、
前記第1画素において、複数の前記信号線のうち少なくとも1つ以上は前記電源線と異なる層に設けられ、
前記第2画素において、複数の前記信号線及び前記電源線は同層に設けられる
表示装置。 - 前記第1画素では、前記基板に垂直な方向からの平面視で、前記信号線は前記電源線と重なって設けられ、
前記第2画素では、前記平面視で、前記信号線は前記電源線と隣り合って設けられる
請求項1に記載の表示装置。 - 前記第1画素の前記電源線の厚さは、前記第2画素の前記電源線の厚さよりも厚い
請求項1又は請求項2に記載の表示装置。 - 前記基板に垂直な方向で異なる層に設けられた第1金属層、第2金属層及び第3金属層を有し、
前記第1画素は、前記無機発光素子と電気的に接続された第1トランジスタと、前記第1トランジスタに接続された第2トランジスタと、前記第1金属層で形成された複数の走査線とを含み、
前記第1トランジスタの半導体層は、前記第2金属層で形成された電極を介して前記無機発光素子と電気的に接続され、
前記第2トランジスタの半導体層は、前記第3金属層で形成された前記信号線と電気的に接続される
請求項2又は請求項3に記載の表示装置。 - 前記基板に垂直な方向からの平面視で、前記第1画素では、複数の前記信号線のうち少なくとも1つの前記信号線は、他の前記信号線と重なって設けられ、
前記第2画素では、複数の前記信号線は隣り合って設けられる
請求項1に記載の表示装置。 - 前記第1画素において、前記電源線と重なって設けられ、前記電源線と電気的に接続された重畳配線を有し、
前記重畳配線は、複数の前記信号線のうち少なくとも1つの前記信号線と同層に設けられる
請求項5に記載の表示装置。 - 前記電源線のシート抵抗値は、複数の前記信号線のうち前記電源線と異なる層に設けられた前記信号線のシート抵抗値以下である
請求項1から請求項6のいずれか1項に記載の表示装置。 - 前記基板に垂直な方向からの平面視で、前記第1画素の面積に対する、複数の前記信号線及び前記電源線を含む金属配線の合計面積の割合は、前記第2画素の面積に対する、複数の前記信号線及び前記電源線を含む金属配線の合計面積の割合よりも小さい
請求項1から請求項7のいずれか1項に記載の表示装置。 - 前記基板と対向し、複数の前記無機発光素子の上に設けられた円偏光板を有し、
前記円偏光板は、赤色の波長を有する光の透過率が、青色又は緑色の波長を有する光の透過率よりも高い
請求項1から請求項8のいずれか1項に記載の表示装置。 - 前記第1画素は、赤色を表示し、
前記第2画素は、青色又は緑色を表示する
請求項1から請求項9のいずれか1項に記載の表示装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019067936A JP7264694B2 (ja) | 2019-03-29 | 2019-03-29 | 表示装置 |
PCT/JP2020/013857 WO2020203701A1 (ja) | 2019-03-29 | 2020-03-26 | 表示装置 |
CN202080025581.8A CN113646825A (zh) | 2019-03-29 | 2020-03-26 | 显示装置 |
US17/482,701 US20220013701A1 (en) | 2019-03-29 | 2021-09-23 | Display device |
Applications Claiming Priority (1)
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JP2019067936A JP7264694B2 (ja) | 2019-03-29 | 2019-03-29 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
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JP2020166178A true JP2020166178A (ja) | 2020-10-08 |
JP7264694B2 JP7264694B2 (ja) | 2023-04-25 |
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ID=72667630
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JP2019067936A Active JP7264694B2 (ja) | 2019-03-29 | 2019-03-29 | 表示装置 |
Country Status (4)
Country | Link |
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US (1) | US20220013701A1 (ja) |
JP (1) | JP7264694B2 (ja) |
CN (1) | CN113646825A (ja) |
WO (1) | WO2020203701A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022267016A1 (zh) * | 2021-06-25 | 2022-12-29 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009169410A (ja) * | 2007-12-21 | 2009-07-30 | Semiconductor Energy Lab Co Ltd | 半導体表示装置 |
US20170337873A1 (en) * | 2016-05-19 | 2017-11-23 | Samsung Display Co., Ltd. | Display device |
JP2018132662A (ja) * | 2017-02-15 | 2018-08-23 | 大日本印刷株式会社 | 画像表示装置 |
JP2018205741A (ja) * | 2017-06-05 | 2018-12-27 | 三星電子株式会社Samsung Electronics Co.,Ltd. | ディスプレイ装置、電子機器、発光素子 |
CN109360851A (zh) * | 2018-11-30 | 2019-02-19 | 武汉天马微电子有限公司 | 一种显示面板和一种显示装置 |
JP2019045676A (ja) * | 2017-09-01 | 2019-03-22 | 大日本印刷株式会社 | 表示装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4123832B2 (ja) * | 2002-05-31 | 2008-07-23 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP4689188B2 (ja) * | 2003-04-25 | 2011-05-25 | 株式会社半導体エネルギー研究所 | 表示装置 |
US8149230B2 (en) * | 2004-07-28 | 2012-04-03 | Samsung Mobile Display Co., Ltd. | Light emitting display |
KR101580827B1 (ko) * | 2009-09-16 | 2015-12-29 | 엘지디스플레이 주식회사 | 유기전계발광소자 및 이의 제조방법 |
WO2013021419A1 (ja) * | 2011-08-09 | 2013-02-14 | パナソニック株式会社 | 画像表示装置 |
KR20180079512A (ko) * | 2016-12-30 | 2018-07-11 | 삼성디스플레이 주식회사 | 표시 장치 |
CN108987423B (zh) * | 2017-06-05 | 2023-09-12 | 三星电子株式会社 | 显示装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009169410A (ja) * | 2007-12-21 | 2009-07-30 | Semiconductor Energy Lab Co Ltd | 半導体表示装置 |
US20170337873A1 (en) * | 2016-05-19 | 2017-11-23 | Samsung Display Co., Ltd. | Display device |
JP2018132662A (ja) * | 2017-02-15 | 2018-08-23 | 大日本印刷株式会社 | 画像表示装置 |
JP2018205741A (ja) * | 2017-06-05 | 2018-12-27 | 三星電子株式会社Samsung Electronics Co.,Ltd. | ディスプレイ装置、電子機器、発光素子 |
JP2019045676A (ja) * | 2017-09-01 | 2019-03-22 | 大日本印刷株式会社 | 表示装置 |
CN109360851A (zh) * | 2018-11-30 | 2019-02-19 | 武汉天马微电子有限公司 | 一种显示面板和一种显示装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022267016A1 (zh) * | 2021-06-25 | 2022-12-29 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
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