JP2020155519A - Spin chuck of substrate processing apparatus - Google Patents

Spin chuck of substrate processing apparatus Download PDF

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JP2020155519A
JP2020155519A JP2019051027A JP2019051027A JP2020155519A JP 2020155519 A JP2020155519 A JP 2020155519A JP 2019051027 A JP2019051027 A JP 2019051027A JP 2019051027 A JP2019051027 A JP 2019051027A JP 2020155519 A JP2020155519 A JP 2020155519A
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semiconductor wafer
spin chuck
substrate
substrate holding
holding portion
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JP7248465B2 (en
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飛 徐
Fei Xu
飛 徐
耕二 西山
Koji Nishiyama
耕二 西山
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Priority to PCT/JP2020/002092 priority patent/WO2020188997A1/en
Priority to TW109104926A priority patent/TWI728703B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

To provide a spin chuck capable of restraining vibration of a substrate during rotation, even in a case of thin substrate.SOLUTION: A spin chuck 1 is used for rotary substrate processing apparatus performing prescribed substrate processing while rotating a semiconductor wafer W suction holding the semiconductor wafer W. Diameter of the substrate holding part 2 of the spin chuck 1 is between 2/3 of the diameter of a holding object semiconductor wafer W, and the diameter of the semiconductor wafer W. Top face of the substrate holding part 2 is a flat plane. Multiple suction holes 20 are provided in a part of the top face of the substrate holding part 2. When suction holding the semiconductor wafer W by means of the substrate holding part 2 where multiple suction holes 20 are provided in a part of the relatively large flat top face, even a thin semiconductor wafer W can be suction held stably, and vibration of the semiconductor wafer W can be restrained during rotation.SELECTED DRAWING: Figure 1

Description

本発明は、半導体ウェハー等の薄板状精密電子基板（以下、単に「基板」と称する）を吸着保持して回転させる基板処理装置のスピンチャックに関する。 The present invention relates to a spin chuck of a substrate processing apparatus that attracts, holds, and rotates a thin plate-shaped precision electronic substrate (hereinafter, simply referred to as “substrate”) such as a semiconductor wafer.

従来より、円形の半導体ウェハーを回転させつつ当該半導体ウェハーに対して塗布処理や洗浄処理等を行う基板処理装置が広く用いられている（例えば、スピンコータ、スピンスクラバ、スピンデベロッパ等）。これらの基板処理装置では、スピンチャックによって半導体ウェハーを水平姿勢に保持しつつ、鉛直方向に沿った中心軸周りで半導体ウェハーを回転させて所定の処理を行う。スピンチャックとしては、半導体ウェハーの端縁部を機械的に把持するものや半導体ウェハーの下面中心部を吸着保持するものが用いられている。 Conventionally, a substrate processing apparatus that performs a coating process, a cleaning process, or the like on a circular semiconductor wafer while rotating the semiconductor wafer has been widely used (for example, a spin coater, a spin scrubber, a spin developer, etc.). In these substrate processing devices, the semiconductor wafer is held in a horizontal position by a spin chuck, and the semiconductor wafer is rotated around a central axis along the vertical direction to perform a predetermined process. As the spin chuck, a spin chuck that mechanically grips the edge portion of the semiconductor wafer and a spin chuck that sucks and holds the center portion of the lower surface of the semiconductor wafer is used.

特許文献１には、半導体ウェハーの下面を真空吸着保持するスピンチャックが開示されている。特許文献１に開示のスピンチャックにおいては、基板保持部と半導体ウェハーとの接触面積をなるべく少なくするべく、基板保持部の周縁部に円環状に凸状部を設けるとともに、その内側に複数の微小突起を設けている。半導体ウェハーの下面に基板保持部を当接させた状態で周縁部の内側を真空吸引することによって半導体ウェハーをスピンチャックに吸着保持する。 Patent Document 1 discloses a spin chuck that holds the lower surface of a semiconductor wafer by vacuum suction. In the spin chuck disclosed in Patent Document 1, in order to reduce the contact area between the substrate holding portion and the semiconductor wafer as much as possible, a convex portion is provided in an annular shape on the peripheral edge of the substrate holding portion, and a plurality of minute portions are provided inside. A protrusion is provided. The semiconductor wafer is sucked and held by the spin chuck by vacuum-sucking the inside of the peripheral edge portion in a state where the substrate holding portion is in contact with the lower surface of the semiconductor wafer.

特開平１０−１５００９７号公報Japanese Unexamined Patent Publication No. 10-15007

典型的には、半導体ウェハーの厚さは規格によって０．７７５ｍｍとされている。ところが、それよりも顕著に厚さの薄い、例えば厚さ０．３ｍｍの半導体ウェハーも使用されている。このような薄型の半導体ウェハーを特許文献１に開示されるようなスピンチャックに吸着保持して高速回転させると、半導体ウェハーのエッジ部分がばたついて大きく揺れ動くという問題が生じる。例えば、スピンコータにて回転中の半導体ウェハーのエッジ部分が大きく揺れ動くと塗布品質が悪化することとなる。 Typically, the thickness of the semiconductor wafer is 0.775 mm according to the standard. However, semiconductor wafers that are significantly thinner than that, for example, 0.3 mm thick, are also used. When such a thin semiconductor wafer is attracted and held by a spin chuck as disclosed in Patent Document 1 and rotated at high speed, there arises a problem that the edge portion of the semiconductor wafer flutters and shakes greatly. For example, if the edge portion of the semiconductor wafer being rotated by the spin coater fluctuates greatly, the coating quality deteriorates.

また、特許文献１に開示されるような接触面積の少ないスピンチャックによって上記薄型の半導体ウェハーを吸着保持すると、吸着部分が凹状にへこんで変形するという問題も生じる。 Further, when the thin semiconductor wafer is sucked and held by a spin chuck having a small contact area as disclosed in Patent Document 1, there is a problem that the sucked portion is recessed and deformed.

本発明は、上記課題に鑑みてなされたものであり、薄い基板であっても回転時の基板の振動を抑制することができるスピンチャックを提供することを目的とする。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a spin chuck capable of suppressing vibration of a substrate during rotation even if it is a thin substrate.

上記課題を解決するため、請求項１の発明は、基板を吸着保持して回転させる基板処理装置のスピンチャックにおいて、保持する基板の径の３分の２以上前記基板の径未満の直径を有する円板形状の基板保持部を備え、前記基板保持部の上面は平面であるとともに、前記上面に複数の吸着孔が設けられることを特徴とする。 In order to solve the above problems, the invention of claim 1 has a diameter of two-thirds or more of the diameter of the substrate to be held and less than the diameter of the substrate in the spin chuck of the substrate processing device that attracts, holds and rotates the substrate. A disk-shaped substrate holding portion is provided, and the upper surface of the substrate holding portion is flat and a plurality of suction holes are provided on the upper surface.

また、請求項２の発明は、請求項１の発明に係る基板処理装置のスピンチャックにおいて、前記複数の吸着孔は、前記基板保持部の前記上面に同心円状に設けられることを特徴とする。 The invention of claim 2 is characterized in that, in the spin chuck of the substrate processing apparatus according to the invention of claim 1, the plurality of suction holes are concentrically provided on the upper surface of the substrate holding portion.

また、請求項３の発明は、請求項２の発明に係る基板処理装置のスピンチャックにおいて、前記複数の吸着孔は、前記基板保持部の径方向に沿って前記基板保持部の端縁部に近付くほど配設間隔が小さくなるように設けられることを特徴とする。 Further, the invention of claim 3 is the spin chuck of the substrate processing apparatus according to the invention of claim 2, wherein the plurality of suction holes are formed at the edge portion of the substrate holding portion along the radial direction of the substrate holding portion. It is characterized in that it is provided so that the arrangement interval becomes smaller as it gets closer.

請求項１から請求項３の発明によれば、保持する基板の径の３分の２以上当該基板の径未満の直径を有する円板形状の基板保持部の上面は平面であるとともに、当該上面に複数の吸着孔が設けられるため、薄い基板であっても安定して基板を吸着保持することができ、回転時の基板の振動を抑制することができる。 According to the inventions of claims 1 to 3, the upper surface of the disk-shaped substrate holding portion having a diameter of two-thirds or more of the diameter of the substrate to be held and less than the diameter of the substrate is flat and the upper surface thereof. Since a plurality of suction holes are provided in the substrate, the substrate can be stably attracted and held even if it is a thin substrate, and vibration of the substrate during rotation can be suppressed.

特に、請求項３の発明によれば、複数の吸着孔は、基板保持部の径方向に沿って基板保持部の端縁部に近付くほど配設間隔が小さくなるように設けられるため、基板の全面を良好なバランスにて吸着することができる。 In particular, according to the invention of claim 3, since the plurality of suction holes are provided so as to be closer to the edge portion of the substrate holding portion along the radial direction of the substrate holding portion, the arrangement interval becomes smaller. The entire surface can be adsorbed with a good balance.

本発明に係る基板処理装置のスピンチャックの構成を示す縦断面図である。It is a vertical sectional view which shows the structure of the spin chuck of the substrate processing apparatus which concerns on this invention. 図１のスピンチャックの端部を拡大した縦断面図である。It is an enlarged vertical sectional view of the end part of the spin chuck of FIG. 図１のスピンチャックの平面図である。It is a top view of the spin chuck of FIG. 図１のスピンチャックによる保持対象となる半導体ウェハーの断面図である。It is sectional drawing of the semiconductor wafer to be held by the spin chuck of FIG.

以下、図面を参照しつつ本発明の実施の形態について詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図１は、本発明に係る基板処理装置のスピンチャック１の構成を示す縦断面図である。図２は、図１のスピンチャック１の端部を拡大した縦断面図である。また、図３は、図１のスピンチャック１の平面図である。 FIG. 1 is a vertical cross-sectional view showing the configuration of a spin chuck 1 of the substrate processing apparatus according to the present invention. FIG. 2 is an enlarged vertical cross-sectional view of the end portion of the spin chuck 1 of FIG. Further, FIG. 3 is a plan view of the spin chuck 1 of FIG.

このスピンチャック１は、例えばスピンコータ等の半導体ウェハーＷを回転させつつ所定の基板処理を行う回転式基板処理装置に用いられる。スピンチャック１は、基板保持部２と嵌合部３とを備えて構成される。基板保持部２および嵌合部３は、例えばポリテトラフルオロエチレン（ＰＴＦＥ）によって形成される。基板保持部２の下面中央に嵌合部３が突設される。嵌合部３は、図示を省略する基板処理装置のモータの回転軸５に嵌合される。当該モータの回転駆動によって、回転軸５とともに嵌合部３および基板保持部２を含むスピンチャック１の全体が鉛直方向に沿った軸Ｊ周りで回転する。なお、基板保持部２と嵌合部３とは一体に成型されても良い。 The spin chuck 1 is used in a rotary substrate processing apparatus that performs a predetermined substrate processing while rotating a semiconductor wafer W such as a spin coater. The spin chuck 1 includes a substrate holding portion 2 and a fitting portion 3. The substrate holding portion 2 and the fitting portion 3 are formed of, for example, polytetrafluoroethylene (PTFE). The fitting portion 3 is projected from the center of the lower surface of the substrate holding portion 2. The fitting portion 3 is fitted to the rotating shaft 5 of the motor of the substrate processing device (not shown). Due to the rotational drive of the motor, the entire spin chuck 1 including the fitting portion 3 and the substrate holding portion 2 is rotated around the axis J along the vertical direction together with the rotating shaft 5. The substrate holding portion 2 and the fitting portion 3 may be integrally molded.

基板保持部２は、円板形状の部材である。円板形状の基板保持部２の直径は、スピンチャック１によって保持される対象となる半導体ウェハーＷの直径の３分の２以上であり、かつ、当該半導体ウェハーＷの直径未満である。例えば、保持される半導体ウェハーＷの径がφ３００ｍｍであれば、基板保持部２の直径は２００ｍｍ以上３００ｍｍ未満である。本実施形態では、基板保持部２の直径は２９４ｍｍであり、半導体ウェハーＷの径よりも若干小さい。 The substrate holding portion 2 is a disk-shaped member. The diameter of the disk-shaped substrate holding portion 2 is two-thirds or more of the diameter of the semiconductor wafer W to be held by the spin chuck 1 and less than the diameter of the semiconductor wafer W. For example, if the diameter of the semiconductor wafer W to be held is φ300 mm, the diameter of the substrate holding portion 2 is 200 mm or more and less than 300 mm. In the present embodiment, the diameter of the substrate holding portion 2 is 294 mm, which is slightly smaller than the diameter of the semiconductor wafer W.

基板保持部２の内部には、円板形状の径方向に沿って上面と平行に複数の横穴１０が形設されている。図３に示すように、本実施形態では、１５°間隔で１２本の横穴１０が基板保持部２に形設されている。なお、図３では、図示の便宜上、横穴１０を点線にて示している。 Inside the substrate holding portion 2, a plurality of horizontal holes 10 are formed in parallel with the upper surface along the radial direction of the disk shape. As shown in FIG. 3, in the present embodiment, 12 horizontal holes 10 are formed in the substrate holding portion 2 at intervals of 15 °. In FIG. 3, the horizontal hole 10 is shown by a dotted line for convenience of illustration.

横穴１０は、基板保持部２の径方向に沿って形設された円筒状の貫通穴である。よって、各横穴１０の長さは基板保持部２の直径と等しい。また、横穴１０の径は、例えば２ｍｍである。１２本の横穴１０の中心部は、回転軸５および嵌合部３の内部に鉛直方向に沿って延設された吸引管１５に連通接続されている。吸引管１５の基端部は真空吸引源８に連通接続されている。真空吸引源８は、真空ポンプ等を備える。 The horizontal hole 10 is a cylindrical through hole formed along the radial direction of the substrate holding portion 2. Therefore, the length of each side hole 10 is equal to the diameter of the substrate holding portion 2. The diameter of the horizontal hole 10 is, for example, 2 mm. The central portion of the twelve horizontal holes 10 is communicatively connected to a suction pipe 15 extending vertically along the inside of the rotating shaft 5 and the fitting portion 3. The base end portion of the suction pipe 15 is communicatively connected to the vacuum suction source 8. The vacuum suction source 8 includes a vacuum pump and the like.

また、横穴１０の両端は丸棒１１によって封止されている。１２本の横穴１０のそれぞれの両端に丸棒１１が嵌合されているため、合計２４個の丸棒１１によって１２本の横穴１０が封止されることとなる。 Further, both ends of the horizontal hole 10 are sealed by the round bar 11. Since the round bars 11 are fitted to both ends of each of the 12 horizontal holes 10, the 12 horizontal holes 10 are sealed by a total of 24 round bars 11.

基板保持部２の上面２ａは平坦な円形の平面である。基板保持部２の上面２ａには、複数の吸着孔２０が穿設されている。複数の吸着孔２０のそれぞれは、基板保持部２の上面２ａと垂直に設けられた小孔である。各吸着孔２０の径は、例えば０．５ｍｍである。複数の吸着孔２０のそれぞれは、いずれかの横穴１０に連通接続されている。 The upper surface 2a of the substrate holding portion 2 is a flat circular flat surface. A plurality of suction holes 20 are formed in the upper surface 2a of the substrate holding portion 2. Each of the plurality of suction holes 20 is a small hole provided perpendicular to the upper surface 2a of the substrate holding portion 2. The diameter of each suction hole 20 is, for example, 0.5 mm. Each of the plurality of suction holes 20 is communicatively connected to any of the horizontal holes 10.

横穴１０は基板保持部２の径方向に沿って設けられているため、図３に示すように、複数の吸着孔２０も基板保持部２の径方向に沿って配設されることとなる。また、図１および図３に示すように、複数の吸着孔２０は、円板形状の基板保持部２の径方向に沿って基板保持部２の端縁部に近付くほど配設間隔（ピッチ）が小さくなるように設けられている。従って、基板保持部２の径方向においては、基板保持部２の端縁部に近付くほど吸着孔２０の配設密度が高くなる。また、１２本の横穴１０の相互間では、同じ配設間隔にて吸着孔２０が設けられている。従って、図３に示すように、複数の吸着孔２０は基板保持部２の上面２ａに同心円状に配設されることとなる。 Since the horizontal holes 10 are provided along the radial direction of the substrate holding portion 2, a plurality of suction holes 20 are also arranged along the radial direction of the substrate holding portion 2, as shown in FIG. Further, as shown in FIGS. 1 and 3, the plurality of suction holes 20 are arranged at intervals (pitch) as they approach the edge portion of the substrate holding portion 2 along the radial direction of the disc-shaped substrate holding portion 2. Is provided so that Therefore, in the radial direction of the substrate holding portion 2, the closer the edge portion of the substrate holding portion 2 is, the higher the arrangement density of the suction holes 20 becomes. Further, suction holes 20 are provided at the same arrangement interval between the 12 horizontal holes 10. Therefore, as shown in FIG. 3, the plurality of suction holes 20 are concentrically arranged on the upper surface 2a of the substrate holding portion 2.

図２に示すように、本実施形態の基板保持部２においては、平坦な平面である上面２ａの一部に吸着孔２０が設けられることとなる。複数の吸着孔２０の開孔率（基板保持部２の上面２ａ全体の面積に対する複数の吸着孔２０の開孔部分の合計面積の比率）は０．０７％以下であり、好ましくは０．０５％以上０．１％以下である。 As shown in FIG. 2, in the substrate holding portion 2 of the present embodiment, the suction holes 20 are provided in a part of the upper surface 2a which is a flat flat surface. The opening ratio of the plurality of suction holes 20 (the ratio of the total area of the opened portions of the plurality of suction holes 20 to the total area of the upper surface 2a of the substrate holding portion 2) is 0.07% or less, preferably 0.05. % Or more and 0.1% or less.

図４は、本実施形態のスピンチャック１による保持対象となる半導体ウェハーＷの断面図である。本実施形態においては、一般的な規格（厚さ０．７７５ｍｍ）よりも厚さの薄い半導体ウェハーＷがスピンチャック１によって吸着保持される。図４の半導体ウェハーＷの直径は、典型的なウェハーサイズと同じφ３００ｍｍである。半導体ウェハーＷの厚さは一定値ではない。半導体ウェハーＷの端縁部から幅３ｍｍの円環状領域の厚さｔ１は０．８ｍｍである。一方、その円環状領域よりも内側の領域の厚さｔ２は０．３ｍｍである。従来、多数のデバイスを積層させて使用する場合、デバイスの裏側を研削することによって各デバイスの厚さを薄くすることにより、全体の厚さが過大にならないようにすることがあった。図４のような薄型の半導体ウェハーＷからデバイスを製造すれば、研削を行わなくても各デバイスの厚さを薄くすることが可能である。すなわち、図４のような半導体ウェハーＷは、薄いデバイスを製造する際に好適である。 FIG. 4 is a cross-sectional view of the semiconductor wafer W to be held by the spin chuck 1 of the present embodiment. In the present embodiment, the semiconductor wafer W having a thickness thinner than the general standard (thickness 0.775 mm) is sucked and held by the spin chuck 1. The diameter of the semiconductor wafer W in FIG. 4 is φ300 mm, which is the same as a typical wafer size. The thickness of the semiconductor wafer W is not a constant value. The thickness t1 of the annular region having a width of 3 mm from the edge portion of the semiconductor wafer W is 0.8 mm. On the other hand, the thickness t2 of the region inside the annular region is 0.3 mm. Conventionally, when a large number of devices are stacked and used, the thickness of each device may be reduced by grinding the back side of the device so that the overall thickness is not excessive. If the device is manufactured from the thin semiconductor wafer W as shown in FIG. 4, the thickness of each device can be reduced without grinding. That is, the semiconductor wafer W as shown in FIG. 4 is suitable for manufacturing a thin device.

図４のような薄型の半導体ウェハーＷを本実施形態のスピンチャック１に載置し、半導体ウェハーＷの裏面を基板保持部２の上面２ａに接触させた状態にて真空吸引源８を作動させると、吸引管１５および横穴１０の内部が吸引され、複数の吸着孔２０のそれぞれに負圧が作用する。横穴１０は貫通穴ではあるものの、横穴１０の両端は丸棒１１によって封止されているため、横穴１０の両端から空気が流入して吸着孔２０に負圧が作用しなくなることは防がれる。半導体ウェハーＷの裏面が基板保持部２の上面２ａに接触した状態で複数の吸着孔２０のそれぞれに負圧が作用することにより、当該半導体ウェハーＷが基板保持部２の上面２ａに吸着保持される。 The thin semiconductor wafer W as shown in FIG. 4 is placed on the spin chuck 1 of the present embodiment, and the vacuum suction source 8 is operated in a state where the back surface of the semiconductor wafer W is in contact with the upper surface 2a of the substrate holding portion 2. The inside of the suction pipe 15 and the horizontal hole 10 is sucked, and a negative pressure acts on each of the plurality of suction holes 20. Although the horizontal hole 10 is a through hole, since both ends of the horizontal hole 10 are sealed by round bars 11, it is possible to prevent air from flowing in from both ends of the horizontal hole 10 and preventing negative pressure from acting on the suction hole 20. .. When the back surface of the semiconductor wafer W is in contact with the upper surface 2a of the substrate holding portion 2, a negative pressure acts on each of the plurality of suction holes 20, so that the semiconductor wafer W is attracted and held by the upper surface 2a of the substrate holding portion 2. To.

半導体ウェハーＷを吸着保持したスピンチャック１が鉛直方向に沿った軸Ｊ（図１）周りで回転することにより、当該半導体ウェハーＷも水平面内で回転する。例えば、スピンコータにて回転する半導体ウェハーＷの表面中心に図示省略の吐出ノズルからレジスト液を吐出することにより、着液したレジスト液が遠心力によって半導体ウェハーＷの表面に薄く拡布されてレジスト膜が形成されることとなる。また、例えば、スピンスクラバにて回転する半導体ウェハーＷの表面に図示省略の洗浄ブラシを当接させて当該洗浄ブラシを揺動させることにより、半導体ウェハーＷのスクラブ洗浄を行うことができる。 When the spin chuck 1 that attracts and holds the semiconductor wafer W rotates around the axis J (FIG. 1) along the vertical direction, the semiconductor wafer W also rotates in the horizontal plane. For example, by discharging a resist liquid from a discharge nozzle (not shown) at the center of the surface of a semiconductor wafer W rotating by a spin coater, the resist liquid that has landed is thinly spread on the surface of the semiconductor wafer W by centrifugal force to form a resist film. It will be formed. Further, for example, scrubbing of the semiconductor wafer W can be performed by bringing a cleaning brush (not shown) into contact with the surface of the semiconductor wafer W rotating by a spin scrubber and swinging the cleaning brush.

本実施形態においては、スピンチャック１の基板保持部２の直径を半導体ウェハーＷの直径の３分の２以上、かつ、半導体ウェハーＷの直径未満としている。すなわち、基板保持部２のサイズを典型的なスピンチャックよりも比較的大きくして半導体ウェハーＷよりも若干小さなものとしている。そして、比較的大きな基板保持部２の上面２ａを平坦な平面とし、その上面２ａの一部に複数の吸着孔２０を設けている。このような基板保持部２によって半導体ウェハーＷを吸着保持すれば、半導体ウェハーＷと上面２ａとの接触面積が大きくなり、図４に示すような薄型の半導体ウェハーＷであっても安定して吸着保持することができる。その結果、図４に示すような薄型の半導体ウェハーＷをスピンチャック１に吸着保持して高速回転させたとしても、回転時の半導体ウェハーＷの振動を抑制することができる。例えば、スピンコータにおいて、回転時の半導体ウェハーＷの振動を抑制することができれば、塗布品質の劣化を防止することができる。 In the present embodiment, the diameter of the substrate holding portion 2 of the spin chuck 1 is set to be two-thirds or more of the diameter of the semiconductor wafer W and less than the diameter of the semiconductor wafer W. That is, the size of the substrate holding portion 2 is made relatively larger than that of a typical spin chuck and slightly smaller than that of the semiconductor wafer W. The upper surface 2a of the relatively large substrate holding portion 2 is made into a flat flat surface, and a plurality of suction holes 20 are provided in a part of the upper surface 2a. If the semiconductor wafer W is sucked and held by such a substrate holding portion 2, the contact area between the semiconductor wafer W and the upper surface 2a becomes large, and even a thin semiconductor wafer W as shown in FIG. 4 is stably sucked. Can be retained. As a result, even if the thin semiconductor wafer W as shown in FIG. 4 is attracted and held by the spin chuck 1 and rotated at high speed, the vibration of the semiconductor wafer W during rotation can be suppressed. For example, in a spin coater, if the vibration of the semiconductor wafer W during rotation can be suppressed, deterioration of coating quality can be prevented.

また、平坦な上面２ａの一部に複数の吸着孔２０を設けた基板保持部２によって薄型の半導体ウェハーＷを吸着保持しても、半導体ウェハーＷと上面２ａとの接触面積が大きいため、吸着部分が凹状にへこむような半導体ウェハーＷの変形を防止することができる。これにより、半導体ウェハーＷの表面平坦度を維持することができる。例えば、スピンコータにおいて、半導体ウェハーＷの表面平坦度を維持することができれば、塗布品質の劣化を防止することができる。 Further, even if the thin semiconductor wafer W is sucked and held by the substrate holding portion 2 provided with the plurality of suction holes 20 in a part of the flat upper surface 2a, the contact area between the semiconductor wafer W and the upper surface 2a is large, so that the semiconductor wafer W is sucked. It is possible to prevent the semiconductor wafer W from being deformed so that the portion is recessed. As a result, the surface flatness of the semiconductor wafer W can be maintained. For example, in a spin coater, if the surface flatness of the semiconductor wafer W can be maintained, deterioration of coating quality can be prevented.

また、円板形状の基板保持部２の径方向に沿って基板保持部２の端縁部に近付くほど配設間隔が小さくなるように複数の吸着孔２０が設けられているため、半導体ウェハーＷの全面を良好なバランスにて吸着することができる。 Further, since a plurality of suction holes 20 are provided so that the arrangement interval becomes smaller as the substrate holding portion 2 approaches the edge portion along the radial direction of the disk-shaped substrate holding portion 2, the semiconductor wafer W is provided. Can be adsorbed on the entire surface with a good balance.

以上、本発明の実施の形態について説明したが、この発明はその趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。例えば、上記実施形態においては、図４に示すような周縁部を厚くした半導体ウェハーＷをスピンチャック１に吸着保持していたが、全面が厚さ０．３ｍｍ程度の薄型の半導体ウェハーＷをスピンチャック１に吸着保持するようにしても良い。図４に示すような半導体ウェハーＷであれば、厚い周縁部によっても回転時の半導体ウェハーＷの振動が幾分抑制されるが、全面が厚さ０．３ｍｍ程度の薄型の半導体ウェハーＷの場合、回転時に半導体ウェハーＷの周縁部がより振動しやすくなる。このような全面が厚さ０．３ｍｍ程度の薄型の半導体ウェハーＷであっても、上記実施形態のスピンチャック１によってその半導体ウェハーＷを吸着保持すれば、回転時の半導体ウェハーＷの振動を抑制することができる。 Although the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention. For example, in the above embodiment, the semiconductor wafer W having a thick peripheral portion as shown in FIG. 4 is adsorbed and held by the spin chuck 1, but a thin semiconductor wafer W having a thickness of about 0.3 mm is spun on the entire surface. It may be sucked and held by the chuck 1. In the case of the semiconductor wafer W as shown in FIG. 4, the vibration of the semiconductor wafer W during rotation is somewhat suppressed by the thick peripheral portion, but in the case of the thin semiconductor wafer W having a thickness of about 0.3 mm on the entire surface. , The peripheral edge of the semiconductor wafer W is more likely to vibrate during rotation. Even if the entire surface of the semiconductor wafer W is as thin as about 0.3 mm, if the semiconductor wafer W is attracted and held by the spin chuck 1 of the above embodiment, the vibration of the semiconductor wafer W during rotation is suppressed. can do.

また、一般的な規格の厚さの半導体ウェハーＷをスピンチャック１に吸着保持するようにしても良い。この場合にも、回転時の半導体ウェハーＷの振動を抑制することができる。もっとも、上記実施形態のような薄型の半導体ウェハーＷをスピンチャック１によって吸着保持するようにした方が回転時の半導体ウェハーＷの振動を抑制する効果をより顕著に得ることができる。 Further, the semiconductor wafer W having a general standard thickness may be attracted and held by the spin chuck 1. Also in this case, the vibration of the semiconductor wafer W during rotation can be suppressed. However, if the thin semiconductor wafer W as in the above embodiment is attracted and held by the spin chuck 1, the effect of suppressing the vibration of the semiconductor wafer W during rotation can be obtained more remarkably.

また、上記実施形態においては、基板保持部２に１２本の横穴１０を形設していたが、横穴１０の本数は１２本に限定されるものではなく適宜の数とすることができる。また、基板保持部２の上面２ａに設ける吸着孔２０の個数も適宜の数とすることができる。 Further, in the above embodiment, 12 horizontal holes 10 are formed in the substrate holding portion 2, but the number of the horizontal holes 10 is not limited to 12 and can be an appropriate number. Further, the number of suction holes 20 provided on the upper surface 2a of the substrate holding portion 2 can be appropriately set.

また、横穴１０および吸着孔２０の径もそれぞれ２ｍｍおよび０．５ｍｍに限定されるものではなく、適宜の値とすることができる。但し、吸着孔２０の径は横穴１０の径よりは小さい。 Further, the diameters of the horizontal hole 10 and the suction hole 20 are not limited to 2 mm and 0.5 mm, respectively, and can be set to appropriate values. However, the diameter of the suction hole 20 is smaller than the diameter of the horizontal hole 10.

また、スピンチャック１の材質はポリテトラフルオロエチレンに限定されるものではなく、例えばポリエーテルエーテルケトン（ＰＥＥＫ）を用いるようにしても良い。 Further, the material of the spin chuck 1 is not limited to polytetrafluoroethylene, and for example, polyetheretherketone (PEEK) may be used.

本発明に係る技術は、特に薄い半導体ウェハーを吸着保持して高速回転させる基板処理装置のスピンチャックに好適に適用することができる。 The technique according to the present invention can be suitably applied to a spin chuck of a substrate processing apparatus that sucks and holds a thin semiconductor wafer and rotates it at high speed.

１ スピンチャック
２ 基板保持部
２ａ 上面
３ 嵌合部
１０ 横穴
１１ 丸棒
２０ 吸着孔
Ｗ 半導体ウェハー 1 Spin chuck 2 Substrate holding part 2a Top surface 3 Fitting part 10 Side hole 11 Round bar 20 Suction hole W Semiconductor wafer

Claims (3)

基板を吸着保持して回転させる基板処理装置のスピンチャックであって、
保持する基板の径の３分の２以上前記基板の径未満の直径を有する円板形状の基板保持部を備え、
前記基板保持部の上面は平面であるとともに、前記上面に複数の吸着孔が設けられることを特徴とする基板処理装置のスピンチャック。 A spin chuck of a substrate processing device that attracts, holds, and rotates a substrate.
A disk-shaped substrate holding portion having a diameter of two-thirds or more of the diameter of the substrate to be held and less than the diameter of the substrate is provided.
A spin chuck of a substrate processing apparatus, characterized in that the upper surface of the substrate holding portion is flat and a plurality of suction holes are provided on the upper surface. 請求項１記載の基板処理装置のスピンチャックにおいて、
前記複数の吸着孔は、前記基板保持部の前記上面に同心円状に設けられることを特徴とする基板処理装置のスピンチャック。 In the spin chuck of the substrate processing apparatus according to claim 1.
A spin chuck of a substrate processing apparatus, wherein the plurality of suction holes are concentrically provided on the upper surface of the substrate holding portion. 請求項２記載の基板処理装置のスピンチャックにおいて、
前記複数の吸着孔は、前記基板保持部の径方向に沿って前記基板保持部の端縁部に近付くほど配設間隔が小さくなるように設けられることを特徴とする基板処理装置のスピンチャック。 In the spin chuck of the substrate processing apparatus according to claim 2.
A spin chuck of a substrate processing apparatus, characterized in that the plurality of suction holes are provided so that the arrangement interval becomes smaller as the substrate holding portion approaches the edge portion along the radial direction of the substrate holding portion.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023119601A1 (en) * 2021-12-23 2023-06-29 住友電気工業株式会社 Heater

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114420527B (en) * 2022-01-21 2024-03-22 深圳市纳设智能装备股份有限公司 Sucking disc mechanism and installing device
CN114975223A (en) * 2022-08-01 2022-08-30 江苏京创先进电子科技有限公司 Holding device compatible with wafers of multiple sizes
CN116078625B (en) * 2023-04-13 2023-07-04 三河建华高科有限责任公司 Ultra-thin substrate adsorption structure and even machine of gluing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10150097A (en) * 1996-11-21 1998-06-02 Dainippon Screen Mfg Co Ltd Spin chuck for board processor
US7470344B1 (en) * 1996-02-27 2008-12-30 Micron Technology, Inc. Chemical dispensing system for semiconductor wafer processing
JP2014195016A (en) * 2013-03-29 2014-10-09 Sharp Corp Semiconductor inspection device
JP2015170617A (en) * 2014-03-04 2015-09-28 東京エレクトロン株式会社 Liquid processing apparatus
JP2017027974A (en) * 2015-07-16 2017-02-02 三菱電機株式会社 Suction plate, device for testing semiconductor device, and method for testing semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7470344B1 (en) * 1996-02-27 2008-12-30 Micron Technology, Inc. Chemical dispensing system for semiconductor wafer processing
JPH10150097A (en) * 1996-11-21 1998-06-02 Dainippon Screen Mfg Co Ltd Spin chuck for board processor
JP2014195016A (en) * 2013-03-29 2014-10-09 Sharp Corp Semiconductor inspection device
JP2015170617A (en) * 2014-03-04 2015-09-28 東京エレクトロン株式会社 Liquid processing apparatus
JP2017027974A (en) * 2015-07-16 2017-02-02 三菱電機株式会社 Suction plate, device for testing semiconductor device, and method for testing semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023119601A1 (en) * 2021-12-23 2023-06-29 住友電気工業株式会社 Heater
JP7391294B2 (en) 2021-12-23 2023-12-05 住友電気工業株式会社 heater

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