TWI728703B - Spin chuck of substrate processing apparatus - Google Patents

Spin chuck of substrate processing apparatus Download PDF

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TWI728703B
TWI728703B TW109104926A TW109104926A TWI728703B TW I728703 B TWI728703 B TW I728703B TW 109104926 A TW109104926 A TW 109104926A TW 109104926 A TW109104926 A TW 109104926A TW I728703 B TWI728703 B TW I728703B
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semiconductor wafer
holding portion
substrate holding
substrate
turntable
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TW109104926A
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TW202036771A (en
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徐飛
西山耕二
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日商斯庫林集團股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本發明提供一種即便為較薄之基板亦可抑制旋轉時之基板之振動的轉盤。 轉盤1用於一面使吸附保持之半導體晶圓W旋轉一面進行特定之基板處理之旋轉式基板處理裝置。轉盤1之基板保持部2之直徑為成為保持對象之半導體晶圓W之直徑的3分之2以上，且未達半導體晶圓W之直徑。基板保持部2之上表面為平坦之平面。於基板保持部2之上表面之一部分設置複數個吸附孔20。若藉由於相對較大之平坦之上表面之一部分設置有複數個吸附孔20的基板保持部2吸附保持半導體晶圓W，則即便為薄型之半導體晶圓W亦可穩定地吸附保持，可抑制旋轉時之半導體晶圓W之振動。The present invention provides a turntable that can suppress the vibration of the substrate during rotation even with a thin substrate. The turntable 1 is used in a rotary substrate processing apparatus that performs specific substrate processing while rotating the semiconductor wafer W held by suction. The diameter of the substrate holding portion 2 of the turntable 1 is two-thirds or more of the diameter of the semiconductor wafer W to be held, and is less than the diameter of the semiconductor wafer W. The upper surface of the substrate holding portion 2 is a flat surface. A plurality of suction holes 20 are provided on a part of the upper surface of the substrate holding portion 2. If the semiconductor wafer W is sucked and held by the substrate holding portion 2 provided with a plurality of sucking holes 20 on a part of the relatively large flat upper surface, even a thin semiconductor wafer W can be stably sucked and held, which can suppress Vibration of the semiconductor wafer W during rotation.

Description

基板處理裝置之轉盤Turntable of substrate processing device

本發明係關於一種吸附保持半導體晶圓等薄板狀精密電子基板(以下，簡稱為「基板」)並使之旋轉之基板處理裝置之轉盤。The present invention relates to a turntable of a substrate processing device that sucks and holds a thin-plate-shaped precision electronic substrate such as a semiconductor wafer (hereinafter referred to as a "substrate") and rotates it.

先前以來，廣泛使用一面使圓形之半導體晶圓旋轉一面對該半導體晶圓進行塗佈處理或洗淨處理等之基板處理裝置(例如，旋轉塗佈機、旋轉擦洗器、旋轉顯影機等)。於該等基板處理裝置中，藉由轉盤一面將半導體晶圓保持為水平姿勢，一面使半導體晶圓繞沿著鉛直方向之中心軸旋轉而進行特定之處理。作為轉盤，使用機械地固持半導體晶圓之端緣部者或吸附保持半導體晶圓之下表面中心部者。Previously, substrate processing equipment (for example, spin coater, spin scrubber, spin developing machine, etc.) that rotate a circular semiconductor wafer on one side and perform coating or cleaning processes on the semiconductor wafer have been widely used. ). In these substrate processing apparatuses, a turntable holds the semiconductor wafer in a horizontal position while rotating the semiconductor wafer around a central axis along the vertical direction to perform specific processing. As the turntable, one that mechanically holds the edge of the semiconductor wafer or the one that holds the center of the lower surface of the semiconductor wafer by suction is used.

於專利文獻1中，揭示有真空吸附保持半導體晶圓之下表面之轉盤。於專利文獻1中所揭示之轉盤中，為了使基板保持部與半導體晶圓之接觸面積儘量少，而於基板保持部之周緣部圓環狀地設置凸狀部，並且於其內側設置複數個微小突起。藉由於使基板保持部抵接於半導體晶圓之下表面之狀態下真空抽吸周緣部之內側而將半導體晶圓吸附保持於轉盤。 [先前技術文獻] [專利文獻]Patent Document 1 discloses a turntable that holds the bottom surface of a semiconductor wafer by vacuum suction. In the turntable disclosed in Patent Document 1, in order to minimize the contact area between the substrate holding portion and the semiconductor wafer, a convex portion is provided on the periphery of the substrate holding portion, and a plurality of convex portions are provided on the inner side of the turntable. Tiny protrusions. The semiconductor wafer is sucked and held on the turntable by vacuum sucking the inside of the peripheral portion in a state where the substrate holding portion is in contact with the lower surface of the semiconductor wafer. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開平10-150097號公報[Patent Document 1] Japanese Patent Laid-Open No. 10-150097

[發明所欲解決之問題][The problem to be solved by the invention]

典型而言，半導體晶圓之厚度，根據規格標準乃經設為0.775 mm。然而，亦使用厚度較其顯著薄之例如厚度0.3 mm之半導體晶圓。若將此種薄型之半導體晶圓吸附保持於專利文獻1中所揭示之轉盤而使之高速旋轉，則產生半導體晶圓之邊緣部分晃動而較大地搖動之問題。例如，若於旋轉塗佈機旋轉中之半導體晶圓之邊緣部分較大地4搖動，則塗佈品質會惡化。Typically, the thickness of the semiconductor wafer is set to 0.775 mm according to the specifications. However, semiconductor wafers with a thickness that is significantly thinner than this, for example, 0.3 mm in thickness are also used. If such a thin semiconductor wafer is sucked and held on the turntable disclosed in Patent Document 1 and rotated at a high speed, the edge portion of the semiconductor wafer shakes and shakes greatly. For example, if the edge portion of the semiconductor wafer rotating in the spin coater shakes greatly, the coating quality will deteriorate.

又，若藉由如專利文獻1中所揭示之接觸面積較少之轉盤吸附保持上述薄型之半導體晶圓，則亦產生吸附部分凹陷為凹狀而變形之問題。In addition, if the thin semiconductor wafer is sucked and held by a turntable with a small contact area as disclosed in Patent Document 1, the problem of deformation of the sucked portion dented into a concave shape also occurs.

本發明係鑒於上述問題而完成者，其目的在於提供一種即便為較薄之基板亦可抑制旋轉時之基板之振動的轉盤。 [解決問題之技術手段]The present invention was made in view of the above-mentioned problems, and its object is to provide a turntable that can suppress the vibration of the substrate during rotation even with a thin substrate. [Technical means to solve the problem]

為了解決上述問題，技術方案1之發明係一種基板處理裝置之轉盤，其吸附保持基板並使基板旋轉，且其特徵在於：具備圓板形狀之基板保持部，該基板保持部具有保持之基板之直徑之3分之2以上且未達上述基板之直徑的直徑，上述基板保持部之上表面為平面，並且於上述上表面設置有複數個吸附孔。In order to solve the above-mentioned problems, the invention of claim 1 is a turntable of a substrate processing apparatus, which sucks and holds a substrate and rotates the substrate, and is characterized in that it has a disk-shaped substrate holding portion, and the substrate holding portion has a substrate to hold the substrate. The upper surface of the substrate holding portion is a flat surface, and a plurality of suction holes are provided on the upper surface of a diameter that is more than two-thirds of the diameter and less than the diameter of the substrate.

又，技術方案2之發明係如技術方案1之發明之基板處理裝置之轉盤，其特徵在於：上述複數個吸附孔同心圓狀地設置於上述基板保持部之上述上表面。Furthermore, the invention of claim 2 is the turntable of the substrate processing apparatus according to the invention of claim 1, characterized in that the plurality of suction holes are concentrically provided on the upper surface of the substrate holding portion.

又，技術方案3之發明係如技術方案2之發明之基板處理裝置之轉盤，其特徵在於：上述複數個吸附孔沿著上述基板保持部之徑向以越接近上述基板保持部之端緣部則配設間隔越小之方式設置。 [發明之效果]Furthermore, the invention of claim 3 is the turntable of the substrate processing apparatus according to the invention of claim 2, characterized in that: the plurality of suction holes are along the radial direction of the substrate holding portion to be closer to the edge portion of the substrate holding portion The smaller the setting interval, the smaller the setting. [Effects of Invention]

根據技術方案1至技術方案3之發明，由於具有保持之基板之直徑之3分之2以上且未達該基板之直徑的直徑之圓板形狀之基板保持部之上表面為平面，並且於該上表面設置有複數個吸附孔，故而即便為較薄之基板亦可穩定地吸附保持基板，可抑制旋轉時之基板之振動。According to the invention of claim 1 to claim 3, since the upper surface of the substrate holding portion in the shape of a disc having a diameter of more than two-thirds of the diameter of the substrate to be held and a diameter less than the diameter of the substrate is flat, and The upper surface is provided with a plurality of suction holes, so even a thin substrate can stably suck and hold the substrate, and the vibration of the substrate during rotation can be suppressed.

尤其，根據技術方案3之發明，由於複數個吸附孔沿著基板保持部之徑向以越接近基板保持部之端緣部則配設間隔越小之方式設置，故而能夠以良好之平衡吸附基板之整個面。In particular, according to the invention of claim 3, since the plurality of suction holes are arranged along the radial direction of the substrate holding portion so as to be closer to the end edge of the substrate holding portion, the spacing becomes smaller, so that the substrate can be adsorbed with a good balance. Of the whole face.

以下，參照圖式對本發明之實施形態詳細地進行說明。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

圖1係表示本發明之基板處理裝置之轉盤1之構成的縱剖視圖。圖2係將圖1之轉盤1之端部放大之縱剖視圖。又，圖3係圖1之轉盤1之俯視圖。Fig. 1 is a longitudinal sectional view showing the structure of a turntable 1 of a substrate processing apparatus of the present invention. Fig. 2 is an enlarged longitudinal sectional view of the end of the turntable 1 of Fig. 1. Moreover, FIG. 3 is a top view of the turntable 1 of FIG. 1.

該轉盤1例如用於旋轉塗佈機等一面使半導體晶圓W旋轉一面進行特定之基板處理之旋轉式基板處理裝置。轉盤1具備基板保持部2及嵌合部3而構成。基板保持部2及嵌合部3例如由聚四氟乙烯(PTFE)形成。於基板保持部2之下表面中央突出設置有嵌合部3。嵌合部3嵌合於省略圖示之基板處理裝置之馬達之旋轉軸5。藉由該馬達之旋轉驅動，包含嵌合部3及基板保持部2之轉盤1之全體與旋轉軸5一起繞沿著鉛直方向之軸J而旋轉。再者，基板保持部2與嵌合部3亦可一體地成型。The turntable 1 is used, for example, in a rotary substrate processing apparatus such as a spin coater that performs specific substrate processing while rotating the semiconductor wafer W. The turntable 1 is configured by including a substrate holding portion 2 and a fitting portion 3. The substrate holding portion 2 and the fitting portion 3 are formed of, for example, polytetrafluoroethylene (PTFE). A fitting part 3 is protrudingly provided in the center of the lower surface of the substrate holding part 2. The fitting part 3 is fitted to the rotating shaft 5 of the motor of the substrate processing apparatus which is not shown in the figure. By the rotational drive of the motor, the entire turntable 1 including the fitting portion 3 and the substrate holding portion 2 rotates about the axis J along the vertical direction together with the rotating shaft 5. Furthermore, the board holding portion 2 and the fitting portion 3 may also be integrally molded.

基板保持部2係圓板形狀之構件。圓板形狀之基板保持部2之直徑為成為由轉盤1保持之對象之半導體晶圓W之直徑之3分之2以上，且未達該半導體晶圓W之直徑。例如，若被保持之半導體晶圓W之直徑為ϕ300 mm，則基板保持部2之直徑為200 mm以上且未達300 mm。於本實施形態中，基板保持部2之直徑為294 mm，較半導體晶圓W之直徑稍小。The substrate holding portion 2 is a disc-shaped member. The diameter of the disc-shaped substrate holding portion 2 is two-thirds or more of the diameter of the semiconductor wafer W to be held by the turntable 1 and is less than the diameter of the semiconductor wafer W. For example, if the diameter of the semiconductor wafer W to be held is ϕ300 mm, the diameter of the substrate holding portion 2 is 200 mm or more and less than 300 mm. In this embodiment, the diameter of the substrate holding portion 2 is 294 mm, which is slightly smaller than the diameter of the semiconductor wafer W.

於基板保持部2之內部，沿著圓板形狀之徑向與上表面平行地形成設置有複數個橫孔10。如圖3所示，於本實施形態中，以15°間隔於基板保持部2形成設置有12個橫孔10。再者，於圖3中，為了方便圖示，由虛線表示橫孔10。Inside the substrate holding portion 2, a plurality of horizontal holes 10 are formed in parallel with the upper surface along the radial direction of the circular plate shape. As shown in FIG. 3, in this embodiment, 12 horizontal holes 10 are formed in the board|substrate holding part 2 at intervals of 15 degrees. In addition, in FIG. 3, for the convenience of illustration, the horizontal hole 10 is indicated by a broken line.

橫孔10係沿著基板保持部2之徑向形成設置之圓筒狀之貫通孔。因此，各橫孔10之長度與基板保持部2之直徑相等。又，橫孔10之直徑例如為2 mm。12個橫孔10之中心部與沿著鉛直方向延設於旋轉軸5及嵌合部3之內部之抽吸管15連通連接。抽吸管15之基端部與真空抽吸源8連通連接。真空抽吸源8具備真空泵等。The horizontal hole 10 is a cylindrical through hole formed along the radial direction of the substrate holding portion 2. Therefore, the length of each lateral hole 10 is equal to the diameter of the substrate holding portion 2. In addition, the diameter of the horizontal hole 10 is, for example, 2 mm. The central portions of the twelve horizontal holes 10 are connected to the suction pipe 15 extending in the vertical direction inside the rotating shaft 5 and the fitting portion 3. The base end of the suction pipe 15 is in communication and connected with the vacuum suction source 8. The vacuum suction source 8 includes a vacuum pump and the like.

又，橫孔10之兩端由圓棒11密封。由於在12個橫孔10之各自之兩端嵌合有圓棒11，故而藉由合計24個圓棒11將12個橫孔10密封。In addition, the two ends of the horizontal hole 10 are sealed by round bars 11. Since the round rods 11 are fitted at both ends of each of the 12 horizontal holes 10, the 12 lateral holes 10 are sealed by a total of 24 round rods 11.

基板保持部2之上表面2a為平坦之圓形之平面。於基板保持部2之上表面2a穿設有複數個吸附孔20。複數個吸附孔20之各者為與基板保持部2之上表面2a垂直地設置之小孔。各吸附孔20之直徑例如為0.5 mm。複數個吸附孔20之各者與任一個橫孔10連通連接。The upper surface 2a of the substrate holding portion 2 is a flat circular plane. A plurality of suction holes 20 are perforated on the upper surface 2a of the substrate holding portion 2. Each of the plurality of suction holes 20 is a small hole provided perpendicularly to the upper surface 2a of the substrate holding portion 2. The diameter of each adsorption hole 20 is, for example, 0.5 mm. Each of the plurality of adsorption holes 20 is connected to any one of the horizontal holes 10 in communication.

由於橫孔10沿著基板保持部2之徑向設置，故而如圖3所示，複數個吸附孔20亦沿著基板保持部2之徑向配設。又，如圖1及圖3所示，複數個吸附孔20沿著圓板形狀之基板保持部2之徑向以越接近基板保持部2之端緣部則配設間隔(間距)越小的方式設置。因此，於基板保持部2之徑向上，越接近基板保持部2之端緣部則吸附孔20之配設密度越高。又，於12個橫孔10之相互間，以相同之配設間隔設置有吸附孔20。因此，如圖3所示，複數個吸附孔20同心圓狀地配設於基板保持部2之上表面2a。Since the horizontal holes 10 are arranged along the radial direction of the substrate holding portion 2, as shown in FIG. 3, a plurality of suction holes 20 are also arranged along the radial direction of the substrate holding portion 2. In addition, as shown in FIGS. 1 and 3, the plurality of suction holes 20 are arranged along the radial direction of the disc-shaped substrate holding portion 2 as they are closer to the edge of the substrate holding portion 2, the smaller the spacing (pitch) is. Mode setting. Therefore, in the radial direction of the substrate holding portion 2, the closer the edge portion of the substrate holding portion 2 is, the higher the arrangement density of the suction holes 20 is. In addition, between the twelve horizontal holes 10, suction holes 20 are provided at the same arrangement interval. Therefore, as shown in FIG. 3, a plurality of suction holes 20 are arranged concentrically on the upper surface 2 a of the substrate holding portion 2.

如圖2所示，於本實施形態之基板保持部2中，於作為平坦之平面之上表面2a之一部分設置有吸附孔20。複數個吸附孔20之開孔率(複數個吸附孔20之開孔部分之合計面積相對於基板保持部2之上表面2a全體之面積的比率)為0.07%以下，較佳為0.05%以上0.1%以下。As shown in FIG. 2, in the substrate holding portion 2 of this embodiment, a suction hole 20 is provided in a portion of the upper surface 2a which is a flat plane. The opening ratio of the plurality of adsorption holes 20 (the ratio of the total area of the openings of the plurality of adsorption holes 20 to the total area of the upper surface 2a of the substrate holding portion 2) is 0.07% or less, preferably 0.05% or more 0.1 %the following.

圖4係成為本實施形態之轉盤1之保持對象之半導體晶圓W的剖視圖。於本實施形態中，厚度較一般規格標準 (厚度0.775 mm)薄之半導體晶圓W由轉盤1吸附保持。圖4之半導體晶圓W之直徑為與典型的晶圓尺寸相同之ϕ300 mm。半導體晶圓W之厚度並非固定值。自半導體晶圓W之端緣部至寬度3 mm之圓環狀區域之厚度t1為0.8 mm。另一方面，較該圓環狀區域更靠內側之區域之厚度t2為0.3 mm。先前，存在如下情況：於使多個元件積層而使用之情形時，藉由對元件之背面側進行研削而使各元件之厚度變薄，藉此全體之厚度不會過大。若自如圖4之薄型之半導體晶圓W製造元件，則即便不進行研削亦可使各元件之厚度變薄。即，如圖4之半導體晶圓W適合於製造較薄之元件時。FIG. 4 is a cross-sectional view of the semiconductor wafer W to be held by the turntable 1 of the present embodiment. In this embodiment, the semiconductor wafer W thinner than the general standard (thickness 0.775 mm) is sucked and held by the turntable 1. The diameter of the semiconductor wafer W in FIG. 4 is ϕ300 mm, which is the same size as a typical wafer. The thickness of the semiconductor wafer W is not a fixed value. The thickness t1 from the end edge of the semiconductor wafer W to the annular region with a width of 3 mm is 0.8 mm. On the other hand, the thickness t2 of the area more inside than the annular area is 0.3 mm. In the past, there has been a case where, when multiple elements are laminated and used, the thickness of each element is reduced by grinding the back side of the element, so that the overall thickness is not too large. If the device is manufactured from the thin semiconductor wafer W as shown in FIG. 4, the thickness of each device can be reduced even without grinding. That is, the semiconductor wafer W shown in FIG. 4 is suitable for manufacturing thinner devices.

若將如圖4之薄型之半導體晶圓W載置於本實施形態之轉盤1，以使半導體晶圓W之背面接觸於基板保持部2之上表面2a之狀態使真空抽吸源8作動，則抽吸管15及橫孔10之內部被抽吸，負壓作用於複數個吸附孔20之各者。橫孔10雖然為貫通孔，但是橫孔10之兩端由圓棒11密封，故而防止空氣自橫孔10之兩端流入而負壓不作用於吸附孔20。藉由於半導體晶圓W之背面接觸於基板保持部2之上表面2a之狀態下負壓作用於複數個吸附孔20之各者，而將該半導體晶圓W吸附保持於基板保持部2之上表面2a。If the thin semiconductor wafer W shown in FIG. 4 is placed on the turntable 1 of the present embodiment, the vacuum suction source 8 is activated in a state where the back surface of the semiconductor wafer W is in contact with the upper surface 2a of the substrate holding portion 2. Then the inside of the suction pipe 15 and the horizontal hole 10 is sucked, and the negative pressure acts on each of the plurality of suction holes 20. Although the horizontal hole 10 is a through hole, the two ends of the horizontal hole 10 are sealed by the round rod 11, so that air is prevented from flowing in from both ends of the horizontal hole 10 and negative pressure does not act on the suction hole 20. Since the back surface of the semiconductor wafer W is in contact with the upper surface 2a of the substrate holding portion 2 and a negative pressure is applied to each of the plurality of suction holes 20, the semiconductor wafer W is sucked and held on the substrate holding portion 2 Surface 2a.

藉由吸附保持有半導體晶圓W之轉盤1繞沿著鉛直方向之軸J(圖1)旋轉，而該半導體晶圓W亦於水平面內旋轉。例如，藉由自省略圖示之噴出噴嘴對利用旋轉塗佈機旋轉之半導體晶圓W之表面中心噴出抗蝕劑液，而著液之抗蝕劑液藉由離心力於半導體晶圓W之表面較薄地擴散而形成抗蝕劑膜。又，例如，藉由使省略圖示之洗淨刷抵接於利用旋轉擦洗器旋轉之半導體晶圓W之表面使該洗淨刷搖動，可進行半導體晶圓W之擦洗洗淨。The turntable 1 holding the semiconductor wafer W by adsorption rotates around an axis J (FIG. 1) along the vertical direction, and the semiconductor wafer W also rotates in a horizontal plane. For example, by spraying the resist solution from the spray nozzle (not shown) to the center of the surface of the semiconductor wafer W rotated by the spin coater, and the resist solution is deposited on the surface of the semiconductor wafer W by centrifugal force It spreads thinly to form a resist film. Furthermore, for example, by contacting a cleaning brush (not shown) on the surface of the semiconductor wafer W rotated by a rotary scrubber and shaking the cleaning brush, the semiconductor wafer W can be scrubbed and cleaned.

於本實施形態中，使轉盤1之基板保持部2之直徑為半導體晶圓W之直徑之3分之2以上，且未達半導體晶圓W之直徑。即，使基板保持部2之尺寸為較典型的轉盤相對較大且較半導體晶圓W稍小者。而且，使相對較大之基板保持部2之上表面2a為平坦之平面，於該上表面2a之一部分設置複數個吸附孔20。若藉由此種基板保持部2吸附保持半導體晶圓W，則半導體晶圓W與上表面2a之接觸面積變大，即便為如圖4所示之薄型之半導體晶圓W亦可穩定地吸附保持。其結果，即便將如圖4所示之薄型之半導體晶圓W吸附保持於轉盤1而使之高速旋轉，亦可抑制旋轉時之半導體晶圓W之振動。例如，於旋轉塗佈機中，若可抑制旋轉時之半導體晶圓W之振動，則可防止塗佈品質之劣化。In this embodiment, the diameter of the substrate holding portion 2 of the turntable 1 is more than two-thirds of the diameter of the semiconductor wafer W, and is less than the diameter of the semiconductor wafer W. That is, the size of the substrate holding portion 2 is relatively larger than a typical turntable and slightly smaller than the semiconductor wafer W. Furthermore, the upper surface 2a of the relatively large substrate holding portion 2 is made a flat plane, and a plurality of suction holes 20 are provided in a part of the upper surface 2a. If the semiconductor wafer W is sucked and held by such a substrate holding portion 2, the contact area between the semiconductor wafer W and the upper surface 2a becomes larger, and even a thin semiconductor wafer W as shown in FIG. 4 can be sucked stably maintain. As a result, even if the thin semiconductor wafer W shown in FIG. 4 is sucked and held on the turntable 1 and rotated at a high speed, the vibration of the semiconductor wafer W during rotation can be suppressed. For example, in a spin coater, if the vibration of the semiconductor wafer W during rotation can be suppressed, the deterioration of coating quality can be prevented.

又，即便藉由於平坦之上表面2a之一部分設置有複數個吸附孔20之基板保持部2吸附保持薄型之半導體晶圓W，亦由於半導體晶圓W與上表面2a之接觸面積較大，故而可防止如吸附部分凹陷為凹狀般之半導體晶圓W之變形。藉此，可維持半導體晶圓W之表面平坦度。例如，於旋轉塗佈機中，若可維持半導體晶圓W之表面平坦度，則可防止塗佈品質之劣化。In addition, even if the thin semiconductor wafer W is sucked and held by the substrate holding portion 2 provided with a plurality of suction holes 20 on a part of the flat upper surface 2a, the contact area between the semiconductor wafer W and the upper surface 2a is relatively large. It can prevent the deformation of the semiconductor wafer W in which the suction part is recessed into a concave shape. Thereby, the surface flatness of the semiconductor wafer W can be maintained. For example, in a spin coater, if the surface flatness of the semiconductor wafer W can be maintained, deterioration of coating quality can be prevented.

又，由於沿著圓板形狀之基板保持部2之徑向以越接近基板保持部2之端緣部則配設間隔越小之方式設置有複數個吸附孔20，故而能夠以良好之平衡吸附半導體晶圓W之整個面。In addition, since a plurality of suction holes 20 are arranged along the radial direction of the disc-shaped substrate holding portion 2 so that the closer to the end edge of the substrate holding portion 2 is, the smaller the arrangement interval, the suction can be adsorbed with a good balance. The entire surface of the semiconductor wafer W.

以上，對本發明之實施形態進行了說明，但只要不脫離其主旨則本發明除了上述內容以外可進行各種變更。例如，於上述實施形態中，由轉盤1吸附保持如圖4所示之周緣部厚之半導體晶圓W，但亦可由轉盤1吸附保持整個面之厚度為0.3 mm左右之薄型之半導體晶圓W。若為如圖4所示之半導體晶圓W，則藉由較厚之周緣部亦可稍微抑制旋轉時之半導體晶圓W之振動，但於整個面之厚度為0.3 mm左右之薄型之半導體晶圓W之情形時，於旋轉時半導體晶圓W之周緣部更容易振動。即便為此種整個面之厚度為0.3 mm左右之薄型之半導體晶圓W，若藉由上述實施形態之轉盤1吸附保持該半導體晶圓W，則亦可抑制旋轉時之半導體晶圓W之振動。As mentioned above, although the embodiment of this invention was described, as long as it does not deviate from the summary, this invention can be variously changed other than the above-mentioned content. For example, in the above embodiment, the turntable 1 sucks and holds the semiconductor wafer W with a thick peripheral edge as shown in FIG. 4, but the turntable 1 may also suck and hold a thin semiconductor wafer W with a thickness of about 0.3 mm on the entire surface. . In the case of the semiconductor wafer W shown in FIG. 4, the vibration of the semiconductor wafer W during rotation can be slightly suppressed by the thicker peripheral portion, but the thickness of the entire surface of the thin semiconductor wafer W is about 0.3 mm. In the case of the circle W, the peripheral portion of the semiconductor wafer W is more likely to vibrate during rotation. Even for such a thin semiconductor wafer W whose entire surface is about 0.3 mm thick, if the semiconductor wafer W is sucked and held by the turntable 1 of the above embodiment, the vibration of the semiconductor wafer W during rotation can be suppressed. .

又，亦可由轉盤1吸附保持一般規格標準之厚度之半導體晶圓W。於該情形時，亦可抑制旋轉時之半導體晶圓W之振動。但是，藉由轉盤1吸附保持如上述實施形態之薄型之半導體晶圓W，可更顯著地獲得抑制旋轉時之半導體晶圓W之振動的效果。In addition, the turntable 1 can also suck and maintain the semiconductor wafer W of the thickness of the general standard. In this case, the vibration of the semiconductor wafer W during rotation can also be suppressed. However, by sucking and holding the thin semiconductor wafer W as in the above-mentioned embodiment by the turntable 1, the effect of suppressing the vibration of the semiconductor wafer W during rotation can be more remarkably obtained.

又，於上述實施形態中，於基板保持部2形成設置有12個橫孔10，但橫孔10之個數並不限定為12個，可設為適當之數量。又，設置於基板保持部2之上表面2a之吸附孔20之個數亦可設為適當之數量。In addition, in the above-mentioned embodiment, 12 lateral holes 10 are formed in the substrate holding portion 2, but the number of lateral holes 10 is not limited to 12, and can be set to an appropriate number. In addition, the number of suction holes 20 provided on the upper surface 2a of the substrate holding portion 2 can also be set to an appropriate number.

又，橫孔10及吸附孔20之直徑亦並不分別限定為2 mm及0.5 mm，可設為適當之值。但是，吸附孔20之直徑小於橫孔10之直徑。In addition, the diameters of the horizontal hole 10 and the adsorption hole 20 are not limited to 2 mm and 0.5 mm, respectively, and can be set to appropriate values. However, the diameter of the adsorption hole 20 is smaller than the diameter of the horizontal hole 10.

又，轉盤1之材質並不限定為聚四氟乙烯，例如亦可使用聚醚醚酮(PEEK)。 [產業上之可利用性]In addition, the material of the turntable 1 is not limited to polytetrafluoroethylene, and for example, polyether ether ketone (PEEK) may also be used. [Industrial availability]

本發明之技術可較佳地應用於吸附保持尤其薄之半導體晶圓並使之高速旋轉之基板處理裝置的轉盤。The technology of the present invention can be preferably applied to a turntable of a substrate processing apparatus that sucks and holds a particularly thin semiconductor wafer and rotates it at a high speed.

1:轉盤 2:基板保持部 2a:上表面 3:嵌合部 5:旋轉軸 8:真空抽吸源 10:橫孔 11:圓棒 15:抽吸管 20:吸附孔 J:軸 t1:厚度 t2:厚度 W:半導體晶圓1: turntable 2: Board holding part 2a: upper surface 3: Fitting part 5: Rotation axis 8: Vacuum suction source 10: Horizontal hole 11: round bar 15: Suction tube 20: adsorption hole J: axis t1: thickness t2: thickness W: semiconductor wafer

圖1係表示本發明之基板處理裝置之轉盤之構成的縱剖視圖。 圖2係將圖1之轉盤之端部放大之縱剖視圖。 圖3係圖1之轉盤之俯視圖。 圖4係成為圖1之轉盤之保持對象之半導體晶圓的剖視圖。Fig. 1 is a longitudinal sectional view showing the structure of a turntable of a substrate processing apparatus of the present invention. Fig. 2 is an enlarged longitudinal sectional view of the end of the turntable of Fig. 1; Figure 3 is a top view of the turntable of Figure 1; 4 is a cross-sectional view of the semiconductor wafer to be held by the turntable of FIG. 1.

1:轉盤 1: turntable

2:基板保持部 2: Board holding part

3:嵌合部 3: Fitting part

5:旋轉軸 5: Rotation axis

8:真空抽吸源 8: Vacuum suction source

10:橫孔 10: Horizontal hole

11:圓棒 11: round bar

15:抽吸管 15: Suction tube

20:吸附孔 20: adsorption hole

J:軸 J: axis

W:半導體晶圓 W: semiconductor wafer

Claims (1)

一種基板處理裝置之轉盤，其特徵在於：其係吸附保持基板並使基板旋轉之基板處理裝置之轉盤，且具備圓板形狀之基板保持部，該圓板形狀之基板保持部具有其保持之基板之直徑之3分之2以上且未達上述基板之直徑的直徑，上述基板保持部之上表面為平面，並且於上述上表面設置有複數個吸附孔；且上述複數個吸附孔同心圓狀地設置於上述基板保持部之上述上表面；上述複數個吸附孔沿著上述基板保持部之徑向以越接近上述基板保持部之端緣部則配設間隔越小之方式設置。 A turntable of a substrate processing device, characterized in that it is a turntable of a substrate processing device that sucks and holds a substrate and rotates the substrate, and is provided with a disk-shaped substrate holding portion, and the disk-shaped substrate holding portion has a substrate to be held. The upper surface of the substrate holding portion is flat, and a plurality of adsorption holes are provided on the upper surface; and the plurality of adsorption holes are concentrically formed Provided on the upper surface of the substrate holding portion; the plurality of suction holes are arranged along the radial direction of the substrate holding portion so that the closer to the end edge portion of the substrate holding portion, the smaller the arrangement interval.
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