JP2020124705A - 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート - Google Patents
拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート Download PDFInfo
- Publication number
- JP2020124705A JP2020124705A JP2020034480A JP2020034480A JP2020124705A JP 2020124705 A JP2020124705 A JP 2020124705A JP 2020034480 A JP2020034480 A JP 2020034480A JP 2020034480 A JP2020034480 A JP 2020034480A JP 2020124705 A JP2020124705 A JP 2020124705A
- Authority
- JP
- Japan
- Prior art keywords
- graphene
- layer
- patterned
- substrate
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 155
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 153
- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 78
- 239000003054 catalyst Substances 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 127
- 239000000463 material Substances 0.000 claims description 101
- 238000007639 printing Methods 0.000 claims description 23
- 229920000642 polymer Polymers 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 17
- 238000012546 transfer Methods 0.000 claims description 14
- 239000002356 single layer Substances 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- 230000007847 structural defect Effects 0.000 claims description 8
- 239000011888 foil Substances 0.000 claims description 7
- 229920005570 flexible polymer Polymers 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 4
- 229910000676 Si alloy Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229910000927 Ge alloy Inorganic materials 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000000110 selective laser sintering Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 238000007646 gravure printing Methods 0.000 claims 1
- 238000001127 nanoimprint lithography Methods 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000007645 offset printing Methods 0.000 claims 1
- 238000007650 screen-printing Methods 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 239000010949 copper Substances 0.000 description 16
- 230000006378 damage Effects 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000976 ink Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 238000010146 3D printing Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000007648 laser printing Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000005477 standard model Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
- H05K3/025—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates by transfer of thin metal foil formed on a temporary carrier, e.g. peel-apart copper
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1216—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by screen printing or stencil printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
- H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1275—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by other printing techniques, e.g. letterpress printing, intaglio printing, lithographic printing, offset printing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0323—Carbon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1333—Deposition techniques, e.g. coating
- H05K2203/1338—Chemical vapour deposition
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Thin Film Transistor (AREA)
- Catalysts (AREA)
- Printing Methods (AREA)
- Chemical Vapour Deposition (AREA)
- Weting (AREA)
Abstract
Description
本明細書で使用される用語は、特定の態様を説明するためのものであり、限定を意図するものではない。例えば、「comprising」という用語は、「consisting of」および「consisting essentially of」という実施形態を含むことが出来る。そうでないと定義しない限り、ここで使用される全ての技術用語および科学用語は、本開示が属する技術分野の当業者に一般に理解される意味と同様の意味を有するものである。本明細書および以下の特許請求の範囲において、多くの本明細書で定義される用語が使用されている。
Claims (28)
- 加工物を形成する方法であって、前記方法は、
グラフェン/触媒膜二重層を形成するために触媒膜上に構造欠陥のない単層または複数の層の連続的なグラフェンを成長させる工程と、
第一の材料層を前記グラフェン表面上にあらかじめ決められたパターンで配置する工程と、
前記グラフェンがパターン化された層の形となるように前記グラフェンを前記触媒膜から剥がす工程と
を有する、方法。 - 請求項1記載の方法において、前記構造欠陥のない単層の連続的なグラフェンを成長させる工程は、大気圧または低圧における化学気相成長法によって行われるものである、方法。
- 請求項1記載の方法において、前記第一の材料層を前記グラフェン表面上に配置する工程は、レーザープリンタによって前記グラフェン表面上に印刷することによって行われるものである、方法。
- 請求項1記載の方法において、前記第一の材料層を前記グラフェン表面上に配置する工程は、ポリマーインクを用いるインクジェットプリンタによって前記グラフェン表面上に印刷することによって行われるものである、方法。
- 請求項1記載の方法において、パターン化された第一の材料層を前記グラフェン表面上に配置する工程は、スクリーン印刷、フレキソ印刷、グラビア印刷、オフセット印刷、ナノインプリントリソグラフィ、またはこれらの任意の組み合わせによって行われるものである、方法。
- 請求項1記載の方法において、前記第一の材料層を前記グラフェン表面上に配置する工程は、3Dプリンタにおける材料の選択的焼結によって行われるものである、方法。
- 請求項6記載の方法において、前記選択的焼結は一つまたはそれ以上の選択的加熱焼結および選択的レーザー焼結を有するものである、方法。
- 請求項1記載の方法において、第一のポリマー層を前記グラフェン表面上に配置する工程は、液体結合材料を3Dプリンタの粉末床層に選択的に付着することによって行われるものである、方法。
- 請求項1記載の方法において、前記触媒膜は、Cu、NiまたはPt箔を有するものである、方法。
- 請求項1記載の方法において、前記グラフェンを前記触媒膜から剥がす工程は、泡転写工程、機械的分離工程、またはこれらの組合せを有するものである、方法。
- 請求項1記載の方法において、前記グラフェンを前記触媒基板から剥がす工程は、前記触媒基板をエッチングする工程によって行われるものである、方法。
- 請求項1、3、4、5、6、7、または8のいずれか記載の方法であって、さらに、
前記グラフェンを前記触媒膜から剥がす工程の前に前記グラフェン表面上の前記第一の材料層上に第二の材料層を配置する工程を有する、方法。 - 請求項12記載の方法において、前記第二の材料層は、実質的にパターン化されていないものである、方法。
- 請求項1、2、3、4、5、6、7、8、9、10、11、12、または13のいずれか記載の方法であって、さらに、
前記剥がされたグラフェンおよびパターン化された層を第二の基板に接着する工程を有する、方法。 - 請求項14記載の方法において、前記第二の基板は、ガラス、シリコン、二酸化ケイ素、酸化アルミニウム、サファイア、ゲルマニウム、ヒ化ガリウム、リン化インジウム、シリコンとゲルマニウムの合金、PET、ポリイミド、他のプラスティック、絹、またはこれらの任意の組み合わせのうちの一つまたはそれ以上を有するものである、方法。
- 請求項14記載の方法において、前記基板は、Si/SiO2を有し、前記グラフェンは、前記基板のSiO2表面に接着するものである、方法。
- 請求項14記載の方法において、前記剥がされたグラフェンは、前記第二の基板に接着して、前記パターン化された層は前記グラフェンに接着するものである、方法。
- 請求項14記載の方法において、前記パターン化された層は、前記第二の基板に接着して、前記グラフェン層は前記パターン化された層に接着するものである、方法。
- 請求項14記載の方法において、前記第二の基板は、パターン化された材料およびパターン化されていない材料の一つまたはそれ以上の層から成るものである、方法。
- 加工物であって、
第二の基板と、
前記第二の基板上に配置されたパターン化されたグラフェン層と、
前記グラフェン上に配置されたパターン化された第一の材料層と
を有する、加工物。 - 請求項17記載の加工物であって、さらに、
前記パターン化された第一の材料層上に配置されたパターン化されていない第二の材料層を有し、前記パターン化されていない材料層は実質的にグラフェン層または前記第二の基板層には接触しない、加工物。 - 請求項17記載の加工物において、前記第二の基板は、ガラス、シリコン、二酸化ケイ素、酸化アルミニウム、サファイア、ゲルマニウム、ヒ化ガリウム、リン化インジウム、シリコンとゲルマニウムの合金、PET、ポリイミド、他のプラスティック、絹、またはこれらの任意の組み合わせのうちの一つまたはそれ以上を有するものである、加工物。
- 請求項17記載の加工物において、前記グラフェン上に配置されたパターン化された第一の材料層は、10マイクロメートル未満の厚さを有するものである、加工物。
- 請求項18記載の加工物において、前記グラフェン上に配置されたパターン化された第一の材料層、前記パターン化された材料層上に配置されたパターン化されていない第二の材料層、またはその両方は、10マイクロメートル未満の厚さを有するものである、加工物。
- 請求項17記載の加工物において、前記グラフェン上に配置されたパターン化された第一の材料層は、10マイクロメートル未満の特性長さを有する特徴を有するものである、加工物。
- 請求項20記載の加工物であって、さらに、
前記パターン化された第一の材料層上に配置されたパターン化されていない第二の材料層を有し、前記パターン化されていない第二の材料層は前記グラフェン層に実質的に接触しない、加工物。 - 請求項26記載の加工物において、前記第二の材料は、可撓性ポリマーを有するものである、加工物。
- 請求項27記載の加工物において、前記第一の材料、前記第二の材料、またはその両方は、可撓性ポリマーを有するものである、加工物。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021163908A JP7329305B2 (ja) | 2014-04-23 | 2021-10-05 | 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート |
JP2023128210A JP2023175680A (ja) | 2014-04-23 | 2023-08-05 | 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201461983014P | 2014-04-23 | 2014-04-23 | |
US61/983,014 | 2014-04-23 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016564137A Division JP2017521850A (ja) | 2014-04-23 | 2015-04-23 | 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021163908A Division JP7329305B2 (ja) | 2014-04-23 | 2021-10-05 | 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020124705A true JP2020124705A (ja) | 2020-08-20 |
JP6992106B2 JP6992106B2 (ja) | 2022-01-13 |
Family
ID=54333158
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016564137A Pending JP2017521850A (ja) | 2014-04-23 | 2015-04-23 | 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート |
JP2020034480A Active JP6992106B2 (ja) | 2014-04-23 | 2020-02-29 | 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート |
JP2021163908A Active JP7329305B2 (ja) | 2014-04-23 | 2021-10-05 | 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート |
JP2023128210A Pending JP2023175680A (ja) | 2014-04-23 | 2023-08-05 | 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016564137A Pending JP2017521850A (ja) | 2014-04-23 | 2015-04-23 | 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021163908A Active JP7329305B2 (ja) | 2014-04-23 | 2021-10-05 | 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート |
JP2023128210A Pending JP2023175680A (ja) | 2014-04-23 | 2023-08-05 | 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート |
Country Status (5)
Country | Link |
---|---|
US (6) | US9930777B2 (ja) |
EP (1) | EP3134214A4 (ja) |
JP (4) | JP2017521850A (ja) |
CN (2) | CN112599592A (ja) |
WO (1) | WO2015164552A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230070118A (ko) * | 2021-11-12 | 2023-05-22 | 충남대학교산학협력단 | 그래핀 패터닝 방법 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9930777B2 (en) | 2014-04-23 | 2018-03-27 | The Trustees Of The University Of Pennsylvania | Scalable, printable, patterned sheet of high mobility graphene on flexible substrates |
US20170155985A1 (en) * | 2015-11-30 | 2017-06-01 | Bragi GmbH | Graphene Based Mesh for Use in Portable Electronic Devices |
CA3154252A1 (en) * | 2019-10-11 | 2021-04-15 | Flavia VITALE | Rapid manufacturing of absorbent substrates for soft, conformable sensors and conductors |
US20210215636A1 (en) * | 2020-01-14 | 2021-07-15 | Iowa State University Research Foundation, Inc. | Aerosol jet printed flexible graphene circuits for electrochemical sensing and biosensing |
US11123011B1 (en) | 2020-03-23 | 2021-09-21 | Nix, Inc. | Wearable systems, devices, and methods for measurement and analysis of body fluids |
US11887766B2 (en) * | 2020-08-24 | 2024-01-30 | Ge Aviation Systems Llc | Magnetic component and method of forming |
CN113788472B (zh) * | 2021-08-27 | 2023-04-14 | 北京航空航天大学 | 一种三维石墨烯复合材料的3d打印成型方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009200177A (ja) * | 2008-02-20 | 2009-09-03 | Denso Corp | グラフェン基板及びその製造方法 |
JP2012032793A (ja) * | 2010-07-01 | 2012-02-16 | Semiconductor Energy Lab Co Ltd | 電界駆動型表示装置 |
WO2012153674A1 (ja) * | 2011-05-06 | 2012-11-15 | 独立行政法人産業技術総合研究所 | 透明導電膜積層体の製造方法および透明導電膜積層体 |
WO2013010108A1 (en) * | 2011-07-13 | 2013-01-17 | Nuvotronics, Llc | Methods of fabricating electronic and mechanical structures |
US20130098540A1 (en) * | 2011-10-24 | 2013-04-25 | Samsung Electronics Co., Ltd. | Graphene-transferring member, graphene transferrer, method of transferring graphene, and methods of fabricating graphene device by using the same |
JP2013542546A (ja) * | 2010-03-08 | 2013-11-21 | ウィリアム・マーシュ・ライス・ユニバーシティ | グラフェン/格子混成構造に基づいた透明電極 |
JP2014519198A (ja) * | 2011-05-13 | 2014-08-07 | コリア・リサーチ・インスティテュート・オブ・ケミカル・テクノロジー | 剥離技法を用いたグラフェンパターンの形成方法及びその装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060188721A1 (en) | 2005-02-22 | 2006-08-24 | Eastman Kodak Company | Adhesive transfer method of carbon nanotube layer |
WO2009129194A2 (en) | 2008-04-14 | 2009-10-22 | Massachusetts Institute Of Technology | Large-area single- and few-layer graphene on arbitrary substrates |
CN103620733B (zh) | 2011-05-23 | 2018-04-24 | 新加坡国立大学 | 转印薄膜的方法 |
US9290389B2 (en) | 2011-12-08 | 2016-03-22 | Nokia Corporation | Graphene composite and a method of manufacturing a graphene composite |
US9845551B2 (en) * | 2012-07-10 | 2017-12-19 | William Marsh Rice University | Methods for production of single-crystal graphenes |
KR101919424B1 (ko) | 2012-07-23 | 2018-11-19 | 삼성전자주식회사 | 트랜지스터 및 그 제조방법 |
KR101920718B1 (ko) | 2012-07-27 | 2018-11-21 | 삼성전자주식회사 | 그래핀 소자 제조 장치 및 이를 이용한 그래핀 소자 제조 방법 |
US9930777B2 (en) | 2014-04-23 | 2018-03-27 | The Trustees Of The University Of Pennsylvania | Scalable, printable, patterned sheet of high mobility graphene on flexible substrates |
-
2015
- 2015-04-23 US US15/305,167 patent/US9930777B2/en active Active
- 2015-04-23 JP JP2016564137A patent/JP2017521850A/ja active Pending
- 2015-04-23 CN CN202011336894.3A patent/CN112599592A/zh active Pending
- 2015-04-23 WO PCT/US2015/027193 patent/WO2015164552A1/en active Application Filing
- 2015-04-23 EP EP15783288.2A patent/EP3134214A4/en active Pending
- 2015-04-23 CN CN201580021326.5A patent/CN107073518B/zh active Active
-
2017
- 2017-12-21 US US15/850,046 patent/US10165679B2/en active Active
-
2018
- 2018-12-10 US US16/214,601 patent/US20190116666A1/en not_active Abandoned
-
2020
- 2020-01-24 US US16/752,421 patent/US20200170108A1/en not_active Abandoned
- 2020-02-29 JP JP2020034480A patent/JP6992106B2/ja active Active
-
2021
- 2021-03-25 US US17/212,092 patent/US11546987B2/en active Active
- 2021-10-05 JP JP2021163908A patent/JP7329305B2/ja active Active
-
2022
- 2022-10-19 US US18/047,689 patent/US20230337358A1/en not_active Abandoned
-
2023
- 2023-08-05 JP JP2023128210A patent/JP2023175680A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009200177A (ja) * | 2008-02-20 | 2009-09-03 | Denso Corp | グラフェン基板及びその製造方法 |
JP2013542546A (ja) * | 2010-03-08 | 2013-11-21 | ウィリアム・マーシュ・ライス・ユニバーシティ | グラフェン/格子混成構造に基づいた透明電極 |
JP2012032793A (ja) * | 2010-07-01 | 2012-02-16 | Semiconductor Energy Lab Co Ltd | 電界駆動型表示装置 |
WO2012153674A1 (ja) * | 2011-05-06 | 2012-11-15 | 独立行政法人産業技術総合研究所 | 透明導電膜積層体の製造方法および透明導電膜積層体 |
JP2014519198A (ja) * | 2011-05-13 | 2014-08-07 | コリア・リサーチ・インスティテュート・オブ・ケミカル・テクノロジー | 剥離技法を用いたグラフェンパターンの形成方法及びその装置 |
WO2013010108A1 (en) * | 2011-07-13 | 2013-01-17 | Nuvotronics, Llc | Methods of fabricating electronic and mechanical structures |
US20130098540A1 (en) * | 2011-10-24 | 2013-04-25 | Samsung Electronics Co., Ltd. | Graphene-transferring member, graphene transferrer, method of transferring graphene, and methods of fabricating graphene device by using the same |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230070118A (ko) * | 2021-11-12 | 2023-05-22 | 충남대학교산학협력단 | 그래핀 패터닝 방법 |
KR102568416B1 (ko) | 2021-11-12 | 2023-08-22 | 충남대학교산학협력단 | 그래핀 패터닝 방법 |
Also Published As
Publication number | Publication date |
---|---|
US20230337358A1 (en) | 2023-10-19 |
US20190116666A1 (en) | 2019-04-18 |
CN107073518A (zh) | 2017-08-18 |
US11546987B2 (en) | 2023-01-03 |
JP7329305B2 (ja) | 2023-08-18 |
WO2015164552A1 (en) | 2015-10-29 |
US20200170108A1 (en) | 2020-05-28 |
JP2017521850A (ja) | 2017-08-03 |
JP6992106B2 (ja) | 2022-01-13 |
EP3134214A1 (en) | 2017-03-01 |
US20170048975A1 (en) | 2017-02-16 |
JP2022017252A (ja) | 2022-01-25 |
US20220078908A1 (en) | 2022-03-10 |
US9930777B2 (en) | 2018-03-27 |
EP3134214A4 (en) | 2018-02-07 |
CN112599592A (zh) | 2021-04-02 |
JP2023175680A (ja) | 2023-12-12 |
CN107073518B (zh) | 2020-12-18 |
US10165679B2 (en) | 2018-12-25 |
US20180160530A1 (en) | 2018-06-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7329305B2 (ja) | 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート | |
Qing et al. | Towards large-scale graphene transfer | |
US9023220B2 (en) | Method of manufacturing a graphene monolayer on insulating substrates | |
US20160318207A1 (en) | Method for the fabrication and transfer of graphene | |
Marchena et al. | Dry transfer of graphene to dielectrics and flexible substrates using polyimide as a transparent and stable intermediate layer | |
KR102447474B1 (ko) | 소수성 기판상에 cvd 성장 그래핀을 전사하기 위한 그래핀 및 비-고분자 방법 | |
Uz et al. | Fabrication of high-resolution graphene-based flexible electronics via polymer casting | |
TW201534667A (zh) | 墨水調配物 | |
KR20140038141A (ko) | 평탄화된 인쇄전자소자 및 그 제조 방법 | |
KR20160098643A (ko) | 센서용 전극의 제조방법 및 이에 따라 제조되는 센서 | |
US11465397B1 (en) | Fabrication of high-resolution graphene-based flexible electronics via polymer casting | |
TW201439244A (zh) | 暫時接著用樹脂、暫時接著用樹脂層、附暫時接著用樹脂層之硬質基板、薄膜基板積層體及薄膜基板加工處理製程 | |
KR101867377B1 (ko) | 나노박막 전사 방법 및 장치 | |
Chen et al. | A reusable wet-transfer printing technique for manufacturing of flexible silver nanowire film-based electrodes | |
Ren | Preparation of graphene electrode | |
Hou et al. | Water-assisted transfer printing techniques | |
Ren | 3.1 Solution casting of graphene oxide | |
Zheng et al. | Fabrication of Graphene-Based Transparent Conducting Thin Films |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200324 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200324 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201110 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210509 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210608 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211005 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20211005 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20211013 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20211019 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211109 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211208 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6992106 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |