JP2022017252A - 拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート - Google Patents
拡張可能、印刷可能である、パターン化された可撓性基板上における高移動度グラフェンシート Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 165
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
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- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
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- 229910052799 carbon Inorganic materials 0.000 description 1
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- UJXZVRRCKFUQKG-UHFFFAOYSA-K indium(3+);phosphate Chemical compound [In+3].[O-]P([O-])([O-])=O UJXZVRRCKFUQKG-UHFFFAOYSA-K 0.000 description 1
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Abstract
Description
本明細書で使用される用語は、特定の態様を説明するためのものであり、限定を意図するものではない。例えば、「comprising」という用語は、「consisting of」および「consisting essentially of」という実施形態を含むことが出来る。そうでないと定義しない限り、ここで使用される全ての技術用語および科学用語は、本開示が属する技術分野の当業者に一般に理解される意味と同様の意味を有するものである。本明細書および以下の特許請求の範囲において、多くの本明細書で定義される用語が使用されている。
Claims (18)
- パターン化された構造を形成する方法であって、前記方法は、
基板上にグラフェン層を形成する工程であって、前記基板上の前記グラフェン層を形成する工程は、化学気相成長法を用いて前記グラフェン層を付着する工程を有する、前記形成する工程と、
前記グラフェン層に、所定のパターンを有するパターン化された層を結合させる工程と、および
前記パターン化された層に結合された前記グラフェン層の第1の部分を、前記基板と、前記パターン化された層に結合されていない前記グラフェン層の第2の部分とから分離する工程と、
を有し、前記分離する工程が、前記グラフェン層の前記第1の部分を前記パターン化された層の前記所定のパターンに対応するパターンにパターン化し、前記パターン化された層が前記グラフェン層の前記第1の部分に構造的な支持を提供する、方法。 - 請求項1記載の方法において、前記パターン化された層は、前記グラフェン層上に形成される、方法。
- 請求項1記載の方法において、前記基板と、前記第2の部分とから前記グラフェン層の前記第1の部分を分離する工程は、前記パターン化された層の前記所定のパターンに従って前記グラフェン層部分を剥がす工程を有する、方法。
- 請求項1記載の方法において、前記基板から前記グラフェン層の前記第1の部分を分離する工程は、前記グラフェン層の前記第1の部分から前記基板をデカップリングする工程を有する、方法。
- 請求項1記載の方法において、前記基板と、前記第2の部分とから前記グラフェン層の前記第1の部分を分離する工程は、泡転写工程、機械的分離工程、またはこれらの組合せを有する、方法。
- 請求項1記載の方法において、前記基板と、前記第2の部分とから前記グラフェン層の前記第1の部分を分離する工程は、前記グラフェン層のエッチングを必要としない、または伴うものではない、方法。
- 請求項1記載の方法において、前記グラフェン層は、グラフェン単層またはグラフェンの連続層を有する、方法。
- 請求項1記載の方法において、前記グラフェン層に、前記所定のパターンを有する前記パターン化された層を結合させる工程は、レーザー印刷、インクジェット印刷、3D印刷、スクリーン印刷、フレキソ印刷、グラビア印刷、オフセット印刷、ナノインプリントリソグラフィ、またはこれらの任意の組み合わせを有する、方法。
- 請求項1記載の方法において、前記グラフェン層に、前記所定のパターンを有する前記
パターン化された層を結合させる工程は、材料の選択的焼結を有する、方法。 - 請求項1記載の方法において、前記グラフェン層に、前記所定のパターンを有する前記パターン化された層を結合させる工程は、液体結合材料を粉末床層に選択的に付着する工程を有する、方法。
- 請求項1記載の方法であって、さらに、前記基板と、前記第2の部分とから前記グラフェン層の前記第1の部分を分離する工程の前に、前記パターン化された層上に材料の層を形成する工程を有する、方法。
- 請求項11記載の方法において、前記材料の層は、パターン化されていない、方法。
- 請求項1記載の方法であって、さらに、前記分離されたグラフェン層の第1の部分をベース基板上に接着させる工程を有する、方法。
- 請求項13記載の方法において、前記分離されたグラフェン層の第1の部分は、前記ベース基板上の前記パターン化された層に接着される、方法。
- 請求項13記載の方法において、前記ベース基板は、パターン化された、またはパターン化されていない材料の層を有する、方法。
- パターン化された構造であって、
所定のパターンを有するパターン化された層と、
前記パターン化された層に結合したグラフェン層の第1の部分と、を有し、
前記グラフェン層は、前記パターン化された層の前記所定のパターンに対応するパターンで、基板と、前記パターン化された層に結合されていない前記グラフェン層の第2の部分とから分離されるように構成され、前記グラフェン層の前記第1の部分は、前記基板と、前記グラフェン層の前記第2の部分とからの分離によって、前記パターン化された層の前記所定のパターンでパターン化されるように構成され、前記グラフェン層の前記第1の部分および前記グラフェン層の前記第2の部分は、化学気相成長されたグラフェンを有し、および前記パターン化された層が前記グラフェン層の前記第1の部分に支持を提供する、パターン化された構造。 - 請求項16記載のパターン化された構造において、前記パターン化された構造は、自立構造である、パターン化された構造。
- 請求項16記載のパターン化された構造において、前記パターン化された構造は、ベース基板に結合するよう構成される、パターン化された構造。
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US20170155985A1 (en) * | 2015-11-30 | 2017-06-01 | Bragi GmbH | Graphene Based Mesh for Use in Portable Electronic Devices |
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