JP2020120078A - 熱処理方法および熱処理装置 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Condensed Matter Physics & Semiconductors (AREA)
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- High Energy & Nuclear Physics (AREA)
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Abstract
Description
4 ハロゲンランプハウス
5 フラッシュランプハウス
6 処理チャンバー
7 保持部
10 移載機構
20 端縁部放射温度計
25 中央部放射温度計
33 タッチパネル
39 ホストコンピュータ
65 熱処理空間
74 サセプタ
100 熱処理装置
101 インデクサ部
110 ロードポート
110a 第1ロードポート
110b 第2ロードポート
110c 第3ロードポート
120 受渡ロボット
130,140 冷却部
150 搬送ロボット
151a,151b 搬送ハンド
160 熱処理部
C キャリア
DC ダミーキャリア
DW ダミーウェハー
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (10)
- 基板に光を照射することによって該基板を加熱する熱処理方法であって、
チャンバー内に基板を搬入する搬入工程と、
前記チャンバー内にてサセプタに保持された基板に光を照射する光照射工程と、
ロットの最初の基板が前記チャンバーに搬入される前に、連続点灯ランプからの光照射によって前記チャンバー内の構造物を一定の保温温度に保温する保温工程と、
前記保温工程の後、前記連続点灯ランプの点灯と消灯とを繰り返すことによって前記構造物の温度を温調する温調工程と、
を備えることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記温調工程では、前記サセプタにダミーウェハーを保持した状態で前記連続点灯ランプから前記ロットに含まれる基板に対するのと同様の光照射を繰り返すことを特徴とする熱処理方法。 - 請求項2記載の熱処理方法において、
前記保温工程では、前記サセプタにダミーウェハーを保持した状態で前記連続点灯ランプから光照射を行うことを特徴とする熱処理方法。 - 請求項3記載の熱処理方法において、
前記保温工程では、前記サセプタの温度に基づいて前記連続点灯ランプの出力を制御するとともに、
前記温調工程では、前記サセプタに保持されたダミーウェハーの温度に基づいて前記連続点灯ランプの出力を制御することを特徴とする熱処理方法。 - 請求項1から請求項4のいずれかに記載の熱処理方法において、
前記保温工程の実行中に前記ロットの処理温度を変更する信号を受信したときに、前記保温温度を変更することを特徴とする熱処理方法。 - 基板に光を照射することによって該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内にて基板を保持するサセプタと、
前記サセプタに保持された基板に光を照射する連続点灯ランプと、
前記連続点灯ランプの出力を制御する制御部と、
を備え、
ロットの最初の基板が前記チャンバーに搬入される前に、前記連続点灯ランプからの光照射によって前記チャンバー内の構造物を一定の保温温度に保温する保温段階の後、前記連続点灯ランプの点灯と消灯とを繰り返すことによって前記構造物の温度を温調する温調段階を行うことを特徴とする熱処理装置。 - 請求項6記載の熱処理装置において、
前記温調段階では、前記サセプタにダミーウェハーを保持した状態で前記連続点灯ランプから前記ロットに含まれる基板に対するのと同様の光照射を繰り返すことを特徴とする熱処理装置。 - 請求項7記載の熱処理装置において、
前記保温段階では、前記サセプタにダミーウェハーを保持した状態で前記連続点灯ランプから光照射を行うことを特徴とする熱処理装置。 - 請求項8記載の熱処理装置において、
前記サセプタの温度を測定する第1温度計と、
前記サセプタに保持されたダミーウェハーの温度を測定する第2温度計と、
をさらに備え、
前記保温段階では、前記第1温度計によって測定された前記サセプタの温度に基づいて前記制御部が前記連続点灯ランプからの出力を制御するとともに、
前記温調段階では、前記第2温度計によって測定された前記サセプタに保持されたダミーウェハーの温度に基づいて前記連続点灯ランプの出力を制御することを特徴とする熱処理装置。 - 請求項6から請求項9のいずれかに記載の熱処理装置において、
前記保温段階の実行中に前記ロットの処理温度を変更する信号を受信したときに、前記保温温度を変更することを特徴とする熱処理装置。
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JP2019012340A JP7315331B2 (ja) | 2019-01-28 | 2019-01-28 | 熱処理方法および熱処理装置 |
TW108142063A TWI760658B (zh) | 2019-01-28 | 2019-11-20 | 熱處理方法及熱處理裝置 |
CN201911143546.1A CN111489983A (zh) | 2019-01-28 | 2019-11-20 | 热处理方法及热处理装置 |
US16/701,296 US11164761B2 (en) | 2019-01-28 | 2019-12-03 | Heat treatment method and heat treatment apparatus of light irradiation type |
KR1020190164652A KR102342922B1 (ko) | 2019-01-28 | 2019-12-11 | 열처리 방법 및 열처리 장치 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0623935B2 (ja) * | 1988-02-09 | 1994-03-30 | 大日本スクリーン製造株式会社 | 再現性を高めた熱処理制御方法 |
JP2008112798A (ja) * | 2006-10-30 | 2008-05-15 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2017092102A (ja) * | 2015-11-04 | 2017-05-25 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP2018535542A (ja) * | 2015-12-30 | 2018-11-29 | マットソン テクノロジー インコーポレイテッドMattson Technology, Inc. | ミリ秒アニールシステムのための予熱方法 |
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JP3988338B2 (ja) * | 1999-10-07 | 2007-10-10 | ウシオ電機株式会社 | 光照射式急速加熱処理装置の制御装置 |
JP5465373B2 (ja) * | 2007-09-12 | 2014-04-09 | 大日本スクリーン製造株式会社 | 熱処理装置 |
JP6473659B2 (ja) * | 2015-05-13 | 2019-02-20 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP6837871B2 (ja) | 2017-03-09 | 2021-03-03 | 株式会社Screenホールディングス | 熱処理方法 |
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- 2019-11-20 TW TW108142063A patent/TWI760658B/zh active
- 2019-11-20 CN CN201911143546.1A patent/CN111489983A/zh active Pending
- 2019-12-03 US US16/701,296 patent/US11164761B2/en active Active
- 2019-12-11 KR KR1020190164652A patent/KR102342922B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0623935B2 (ja) * | 1988-02-09 | 1994-03-30 | 大日本スクリーン製造株式会社 | 再現性を高めた熱処理制御方法 |
JP2008112798A (ja) * | 2006-10-30 | 2008-05-15 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP2017092102A (ja) * | 2015-11-04 | 2017-05-25 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP2018535542A (ja) * | 2015-12-30 | 2018-11-29 | マットソン テクノロジー インコーポレイテッドMattson Technology, Inc. | ミリ秒アニールシステムのための予熱方法 |
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CN111489983A (zh) | 2020-08-04 |
TW202029345A (zh) | 2020-08-01 |
KR20200093423A (ko) | 2020-08-05 |
TWI760658B (zh) | 2022-04-11 |
US20200243357A1 (en) | 2020-07-30 |
JP7315331B2 (ja) | 2023-07-26 |
KR102342922B1 (ko) | 2021-12-23 |
US11164761B2 (en) | 2021-11-02 |
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