JP2020101788A - Euv薄膜を引っ張るための誘起応力 - Google Patents
Euv薄膜を引っ張るための誘起応力 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims abstract description 72
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 67
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 65
- 238000000151 deposition Methods 0.000 claims abstract description 20
- 230000001939 inductive effect Effects 0.000 claims abstract description 7
- 239000012528 membrane Substances 0.000 claims description 75
- 238000007688 edging Methods 0.000 claims description 50
- 238000000576 coating method Methods 0.000 claims description 48
- 239000011248 coating agent Substances 0.000 claims description 40
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 238000001459 lithography Methods 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000003828 vacuum filtration Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 3
- 238000000605 extraction Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 72
- 239000010409 thin film Substances 0.000 abstract description 35
- 238000007665 sagging Methods 0.000 abstract description 3
- 239000002238 carbon nanotube film Substances 0.000 description 27
- 239000010410 layer Substances 0.000 description 22
- 238000000231 atomic layer deposition Methods 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000013459 approach Methods 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 230000037303 wrinkles Effects 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- 239000000443 aerosol Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021392 nanocarbon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02606—Nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Carbon And Carbon Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
フォトマスクを提供する工程、
縁取り部を提供する工程、
縁取り部の上に少なくとも2つの電気コンタクトを堆積する工程、
膜が自立部分を含むように、カーボンナノチューブを含む膜を縁取り部の上に搭載する工程、を含み、
搭載する工程および堆積する工程の後に、電気コンタクトが膜と接触し、
さらに、少なくとも1組の電気コンタクトにバイアスを印加することにより、膜の自立部分を通る電流を誘起する工程、
フォトマスクの上に、膜の自立部分を備えたフォトマスクの少なくとも片側の上に縁取り部を搭載する工程、
を含む。
フォトマスクを提供する工程、
縁取り部を提供する工程、
膜が自立部分を含むように、カーボンナノチューブを含む膜を縁取り部の上に搭載する工程、
膜の自立部分の中で磁場を変化させることにより、膜の自立部分を通る電流を誘起する工程、
フォトマスクの上で、膜の自立部分を備えたフォトマスクの少なくとも片側の上に縁取り部を搭載する工程、
を含む。
フォトマスク210を提供する工程110、
縁取り部220を提供する工程120、
縁取り部220の上に少なくとも2つの電気コンタクト230を堆積する工程130、
膜240が自立部分を含むように、カーボンナノチューブを含む膜240を縁取り部220の上に搭載する工程140、を含み、
搭載工程140および堆積工程130の後に、電気コンタクト230が膜240と接触し、
さらに、少なくとも1組の電気コンタクト230にバイアスを印加することにより、膜の自立部分を通る電流を得る工程150、
フォトマスク210の上に、膜の自立部分を備えたフォトマスク210の少なくとも片側の上に縁取り部220を搭載する工程170、
を含む。
Claims (14)
- フォトマスク(210)を保護するための方法(100)であって、この方法は、
フォトマスク(210)を提供する工程(110)と、
縁取り部(220)を提供する工程(120)と、
縁取り部(220)の上に少なくとも2つの電気コンタクト(230)を堆積する工程(130)と、
膜(240)が自立部分を含むように、カーボンナノチューブを含む膜(240)を縁取り部(220)の上に搭載する工程(140)と、を含み、
搭載する工程(140)および堆積する工程(130)の後に、電気コンタクト(230)が膜(240)と接触し、
さらに、少なくとも1組の電気コンタクト(230)にバイアスを印加することにより、膜(240)の自立部分を通る電流を誘起する工程(150)と、
フォトマスク(210)の上で、膜の自立部分を備えたフォトマスク(210)の少なくとも片側の上に縁取り部(220)を搭載する工程(170)と、
を含む方法。 - フォトマスク(210)を保護するための方法(100)であって、この方法は、
フォトマスク(210)を提供する工程(110)と、
縁取り部(220)を提供する工程(120)と、
膜(240)が自立部分を含むように、カーボンナノチューブを含む膜(240)を縁取り部(220)の上に搭載する工程(140)と、
膜の自立部分の中で磁場を変化させることにより、膜(240)の自立部分を通る電流を誘起する工程(150)と、
フォトマスク(210)の上で、膜の自立部分を備えたフォトマスク(210)の少なくとも片側の上に縁取り部(220)を搭載する工程(170)と、
を含む方法。 - バイアスを印加する工程(150)は、少なくとも2組の電気コンタクト(230)の上で行われる請求項1に記載の方法(100)。
- 1つの電流パルスが、膜(240)の自立部分を通って誘起される(150)請求項1〜3のいずれかに記載の方法(100)。
- 予め決められた所定のサイクルを有する電流パルス列が、膜(240)の自立部分を通って誘起される請求項1〜3のいずれかに記載の方法(100)。
- 提供された(220)縁取り部(220)は、シリコンの縁取り部である請求項1〜5のいずれかに記載の方法(100)。
- シリコン系材料を提供し、そしてシリコン系材料を部分的に除去することにより、縁取り部(220)が提供される請求項6に記載の方法(100)。
- 電気コンタクト(230)は、チタンシード層を堆積し、続いてパラジウムを堆積することにより得られる請求項1に記載の方法(100)。
- 膜(240)、カーボンナノチューブの乾式転写により、または濾紙の上に真空濾過を用いて溶液から抽出することにより準備される請求項1〜8のいずれかに記載の方法(100)。
- 膜の堆積後に、膜の上にイソプロピルアルコールを提供する工程を含む請求項1〜9のいずれかに記載の方法(100)。
- 膜(240)の上にコーティングを提供する工程(160)を含む請求項1〜10のいずれかに記載の方法(100)。
- 部分的なコーティングが、膜(240)の上に提供される請求項11に記載の方法(100)。
- 完全なコーティングが、膜(240)の上に提供される請求項11に記載の方法(100)。
- カーボンナノチューブを含む搭載された膜により保護されたフォトマスクの上で、リソグラフィを適用する工程を含む請求項1〜13のいずれかに記載の方法(100)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP18214565.6 | 2018-12-20 | ||
EP18214565.6A EP3671342B1 (en) | 2018-12-20 | 2018-12-20 | Induced stress for euv pellicle tensioning |
Publications (1)
Publication Number | Publication Date |
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JP2020101788A true JP2020101788A (ja) | 2020-07-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019170478A Pending JP2020101788A (ja) | 2018-12-20 | 2019-09-19 | Euv薄膜を引っ張るための誘起応力 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11163229B2 (ja) |
EP (1) | EP3671342B1 (ja) |
JP (1) | JP2020101788A (ja) |
KR (1) | KR20200078310A (ja) |
CN (1) | CN111352295B (ja) |
TW (1) | TW202024770A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022196182A1 (ja) * | 2021-03-19 | 2022-09-22 | 三井化学株式会社 | ペリクル、露光原版、露光装置、ペリクルの製造方法及び半導体装置の製造方法 |
KR20230023007A (ko) * | 2020-09-16 | 2023-02-16 | 린텍 오브 아메리카, 인크. | Euv 리소그래피용 초박형, 초저밀도 필름 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102514088B1 (ko) * | 2020-08-04 | 2023-03-27 | 주식회사 에스앤에스텍 | 1차원 나노물질을 사용하는 극자외선 리소그래피용 펠리클 및 이의 제조방법 |
KR102585401B1 (ko) * | 2020-11-17 | 2023-10-10 | 주식회사 에스앤에스텍 | 독립된 박막 형태의 캡핑층을 갖는 극자외선 리소그래피용 펠리클 및 그 제조방법 |
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US20200201169A1 (en) | 2020-06-25 |
EP3671342B1 (en) | 2021-03-17 |
TW202024770A (zh) | 2020-07-01 |
EP3671342A1 (en) | 2020-06-24 |
CN111352295A (zh) | 2020-06-30 |
CN111352295B (zh) | 2024-04-09 |
KR20200078310A (ko) | 2020-07-01 |
US11163229B2 (en) | 2021-11-02 |
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