JP2020092230A - 発光装置及び発光装置モジュール - Google Patents
発光装置及び発光装置モジュール Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- Condensed Matter Physics & Semiconductors (AREA)
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- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
20 発光装置モジュール
11 基板
12 発光素子
14 透光部材
15、16、17 被覆体
P1、P2、P3 酸化チタン粒子
15PT、16PT 粒子群
Claims (13)
- 基板と、
前記基板上に配置された発光素子と、
前記発光素子上に配置された透光部材と、
前記基板上において前記透光部材を取り囲むように配置され、前記透光部材の側面を覆う被覆体と、を有し、
前記被覆体は、前記被覆体内に分散された光散乱性の複数の金属酸化物粒子を含む粒子群を有し、
前記粒子群における前記被覆体の側面の近傍に分散された金属酸化物粒子は、各粒子内において他の部分よりもバンドギャップが小さい部分を有することを特徴とする発光装置。 - 前記被覆体は、前記複数の金属酸化物粒子を担持し、可視光及び紫外光を透過させる1つの樹脂マトリクスを有することを特徴とする請求項1に記載の発光装置。
- 前記複数の金属酸化物粒子は、前記被覆体内において均一な密度で分散されていることを特徴とする請求項1又は2に記載の発光装置。
- 前記複数の金属酸化物粒子は、前記被覆体内において前記被覆体の上面から前記基板に向かって徐々に密度が高くなるように分散されていることを特徴とする請求項1又は2に記載の発光装置。
- 前記被覆体内における前記被覆体の前記側面の近傍の第1の領域に分散された金属酸化物粒子における可視光の吸収率は、前記被覆体の前記第1の領域よりも内側の第2の領域に分散された金属酸化物粒子における可視光の吸収率よりも大きいことを特徴とする請求項1乃至4のいずれか1つに記載の発光装置。
- 前記金属酸化物粒子は、酸化チタン粒子又は酸化亜鉛粒子を含むことを特徴とする請求項1乃至5のいずれか1つに記載の発光装置。
- 前記複数の金属酸化物粒子は、前記被覆体内において、5〜70wt%の範囲内で分散されていることを特徴とする請求項1乃至6のいずれか1つに記載の発光装置。
- 前記粒子群は、前記複数の金属酸化物粒子と、前記複数の金属酸化物粒子を紫外線による変質から保護する被覆膜と、を有することを特徴とする請求項1乃至7のいずれか1つに記載の発光装置。
- 前記バンドギャップが小さい部分を有する前記複数の金属酸化物粒子は、前記被覆体の前記側面から20μm以下の深さの範囲内の領域に分散されていることを特徴とする請求項6に記載の発光装置。
- モジュール基板及び前記モジュール基板上に並置された複数の発光装置を含み、
前記複数の発光装置の各々は、
個別基板と、
前記個別基板上に配置された発光素子と、
前記発光素子上に配置された透光部材と、
前記個別基板上において前記透光部材を取り囲むように配置され、前記透光部材の側面を覆う被覆体と、を有し、
前記被覆体は、光散乱性の複数の金属酸化物粒子を含む粒子群を有し、
前記粒子群における前記被覆体の側面の近傍に分散された金属酸化物粒子は、各粒子内において他の部分よりもバンドギャップが小さい部分を有することを特徴とする発光装置モジュール。 - 前記被覆体は、前記側面に複数の凹凸を有することを特徴とする請求項10に記載の発光装置モジュール。
- 基板と、
前記基板上に配置された発光素子と、
前記基板上において前記発光素子を取り囲むように配置され、前記発光素子の側面を覆う被覆体と、を有し、
前記被覆体は、光散乱性の複数の金属酸化物粒子を含む粒子群を有し、
前記粒子群における前記被覆体の側面の近傍に分散された金属酸化物粒子は、各粒子内において他の部分よりもバンドギャップが小さい部分を有することを特徴とする発光装置。 - 基板と、
前記基板上に配置された発光素子と、
前記基板上において前記発光素子を取り囲むように配置され、前記発光素子の側面を覆う被覆体と、を有し、
前記被覆体は、光散乱性の複数の金属酸化物粒子を含む粒子群を有し、
前記被覆体は、前記被覆体の側面にレーザ光が照射された領域を有することを特徴とする発光装置。
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Cited By (1)
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WO2022065284A1 (ja) * | 2020-09-24 | 2022-03-31 | スタンレー電気株式会社 | 半導体発光装置及び半導体発光モジュール |
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