JP2020092031A - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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- 229910000838 Al alloy Inorganic materials 0.000 description 12
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- 229910001220 stainless steel Inorganic materials 0.000 description 9
- 229940105963 yttrium fluoride Drugs 0.000 description 9
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 8
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- 229910052759 nickel Inorganic materials 0.000 description 6
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- 238000010586 diagram Methods 0.000 description 5
- ULEWOPXGNWLKFY-UHFFFAOYSA-M oxygen(2-) yttrium(3+) fluoride Chemical compound [O--].[F-].[Y+3] ULEWOPXGNWLKFY-UHFFFAOYSA-M 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910001026 inconel Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 239000013626 chemical specie Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/103—Hollow-waveguide/coaxial-line transitions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30405—Details
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (10)
- 処理容器と、
前記処理容器内に設けられたステージと、
前記ステージの上方に前記処理容器内の空間を介して設けられた上部電極と、
VHF波又はUHF波である高周波の導入部であって、前記空間の横方向端部に設けられており、前記処理容器の中心軸線の周りで周方向に延在する、該導入部と、
前記導入部に前記高周波を供給するように構成された導波部と、
を備え、
前記導波部は、導波路を提供する共振器を含み、
前記共振器の前記導波路は、前記中心軸線の周りで前記周方向に延び、前記中心軸線が延在する方向に延び、前記導入部に接続されている、
プラズマ処理装置。 - 前記導波路は筒形状を有する、請求項1に記載のプラズマ処理装置。
- 前記導波路は、前記中心軸線が延在する前記方向における一端及び他端を含み、
前記一端と前記他端との間の前記導波路の幅は、前記導波路に供給される高周波の自由空間波長の約1/2である、
請求項1又は2に記載のプラズマ処理装置。 - 前記導波路は、前記中心軸線が延在する前記方向において折り返されている、請求項1〜3の何れか一項に記載のプラズマ処理装置。
- 前記導波部は、前記中心軸線に対して径方向に延びて、前記導波路に接続する複数の同軸導波管を含み、
前記複数の同軸導波管は、前記周方向において等間隔で配列されている、
請求項1〜4の何れか一項に記載のプラズマ処理装置。 - 前記導波部は、前記中心軸線上で延在し、且つ、前記複数の同軸導波管に接続された同軸導波管を更に含む、請求項5に記載のプラズマ処理装置。
- 前記ステージの上方、且つ、前記上部電極の下方に設けられた誘電体板を更に備える、請求項1〜6の何れか一項に記載のプラズマ処理装置。
- 前記誘電体板は、前記処理容器内にガスを吐出するように構成されたシャワープレートである、請求項7に記載のプラズマ処理装置。
- 前記シャワープレートにガスを供給するために前記導波部を通って延びる配管を更に備え、
前記導波部の金属壁が接地されている、
請求項8に記載のプラズマ処理装置。 - プラズマ処理装置を用いて基板にプラズマ処理を行うプラズマ処理方法であって、
前記プラズマ処理装置の処理容器内の空間にガスを供給する工程と、
前記処理容器内でステージ上に載置された基板に対してプラズマ処理を行うために、前記空間に高周波を導入する工程と、
を含み、
前記プラズマ処理装置は、
前記処理容器と、
前記処理容器内に設けられた前記ステージと、
前記ステージの上方に前記処理容器内の前記空間を介して設けられた上部電極と、
VHF波又はUHF波である前記高周波の導入部であって、前記空間の横方向端部に設けられており、前記処理容器の中心軸線の周りで周方向に延在する、該導入部と、
前記導入部に前記高周波を供給するように構成された導波部と、
を備え、
前記導波部は、導波路を提供する共振器を含み、
前記共振器の前記導波路は、前記中心軸線の周りで前記周方向に延び、前記中心軸線が延在する方向に延び、前記導入部に接続されている、
プラズマ処理方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018229239A JP7184254B2 (ja) | 2018-12-06 | 2018-12-06 | プラズマ処理装置及びプラズマ処理方法 |
US17/298,119 US20220020569A1 (en) | 2018-12-06 | 2019-11-26 | Plasma processing apparatus and plasma processing method |
KR1020217020994A KR102592865B1 (ko) | 2018-12-06 | 2019-11-26 | 플라스마 처리 장치 및 플라스마 처리 방법 |
PCT/JP2019/046231 WO2020116255A1 (ja) | 2018-12-06 | 2019-11-26 | プラズマ処理装置及びプラズマ処理方法 |
CN201980079184.6A CN113170568A (zh) | 2018-12-06 | 2019-11-26 | 等离子体处理装置和等离子体处理方法 |
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JP2018229239A JP7184254B2 (ja) | 2018-12-06 | 2018-12-06 | プラズマ処理装置及びプラズマ処理方法 |
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JP (1) | JP7184254B2 (ja) |
KR (1) | KR102592865B1 (ja) |
CN (1) | CN113170568A (ja) |
WO (1) | WO2020116255A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230007940A (ko) | 2021-07-06 | 2023-01-13 | 도쿄엘렉트론가부시키가이샤 | 플라스마 처리 장치 |
KR20240035708A (ko) | 2022-09-09 | 2024-03-18 | 도쿄엘렉트론가부시키가이샤 | 플라스마 처리 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0319332A (ja) * | 1989-06-16 | 1991-01-28 | Hitachi Ltd | マイクロ波プラズマ処理装置 |
JP2002261086A (ja) * | 2001-03-06 | 2002-09-13 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2007217738A (ja) * | 2006-02-15 | 2007-08-30 | Toppan Printing Co Ltd | 3次元中空容器の薄膜成膜装置 |
JP2011103238A (ja) * | 2009-11-11 | 2011-05-26 | Hitachi High-Technologies Corp | プラズマ処理装置 |
Family Cites Families (15)
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JP3469987B2 (ja) * | 1996-04-01 | 2003-11-25 | 株式会社日立製作所 | プラズマ処理装置 |
JP3053105B2 (ja) * | 1989-06-30 | 2000-06-19 | 株式会社日立製作所 | プラズマcvd装置及びその方法 |
JP3039973B2 (ja) * | 1990-09-19 | 2000-05-08 | 株式会社日立製作所 | プラズマエッチング装置 |
JPH06104096A (ja) * | 1992-09-18 | 1994-04-15 | Hitachi Ltd | プラズマ処理装置 |
JPH08236448A (ja) * | 1995-02-22 | 1996-09-13 | Matsushita Electric Ind Co Ltd | スパッタリング装置及びスパッタリング方法 |
CN1164125A (zh) * | 1996-02-20 | 1997-11-05 | 株式会社日立制作所 | 等离子体处理方法和装置 |
CN1293789C (zh) * | 2001-01-18 | 2007-01-03 | 东京毅力科创株式会社 | 等离子体装置及等离子体生成方法 |
JP4381001B2 (ja) * | 2003-02-25 | 2009-12-09 | シャープ株式会社 | プラズマプロセス装置 |
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KR20140102757A (ko) * | 2012-02-17 | 2014-08-22 | 도호쿠 다이가쿠 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
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JP2013175480A (ja) * | 2013-05-09 | 2013-09-05 | Tohoku Univ | プラズマ処理装置およびプラズマ処理方法 |
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2018
- 2018-12-06 JP JP2018229239A patent/JP7184254B2/ja active Active
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2019
- 2019-11-26 CN CN201980079184.6A patent/CN113170568A/zh active Pending
- 2019-11-26 US US17/298,119 patent/US20220020569A1/en active Pending
- 2019-11-26 KR KR1020217020994A patent/KR102592865B1/ko active IP Right Grant
- 2019-11-26 WO PCT/JP2019/046231 patent/WO2020116255A1/ja active Application Filing
Patent Citations (4)
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JPH0319332A (ja) * | 1989-06-16 | 1991-01-28 | Hitachi Ltd | マイクロ波プラズマ処理装置 |
JP2002261086A (ja) * | 2001-03-06 | 2002-09-13 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2007217738A (ja) * | 2006-02-15 | 2007-08-30 | Toppan Printing Co Ltd | 3次元中空容器の薄膜成膜装置 |
JP2011103238A (ja) * | 2009-11-11 | 2011-05-26 | Hitachi High-Technologies Corp | プラズマ処理装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20230007940A (ko) | 2021-07-06 | 2023-01-13 | 도쿄엘렉트론가부시키가이샤 | 플라스마 처리 장치 |
KR20240035708A (ko) | 2022-09-09 | 2024-03-18 | 도쿄엘렉트론가부시키가이샤 | 플라스마 처리 장치 |
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KR102592865B1 (ko) | 2023-10-24 |
JP7184254B2 (ja) | 2022-12-06 |
CN113170568A (zh) | 2021-07-23 |
KR20210091333A (ko) | 2021-07-21 |
US20220020569A1 (en) | 2022-01-20 |
WO2020116255A1 (ja) | 2020-06-11 |
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