JP2020087969A - プラズマ処理装置、及びリング部材の形状測定方法 - Google Patents
プラズマ処理装置、及びリング部材の形状測定方法 Download PDFInfo
- Publication number
- JP2020087969A JP2020087969A JP2018214701A JP2018214701A JP2020087969A JP 2020087969 A JP2020087969 A JP 2020087969A JP 2018214701 A JP2018214701 A JP 2018214701A JP 2018214701 A JP2018214701 A JP 2018214701A JP 2020087969 A JP2020087969 A JP 2020087969A
- Authority
- JP
- Japan
- Prior art keywords
- ring member
- mounting surface
- focus ring
- jigs
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000012545 processing Methods 0.000 title claims description 101
- 238000000034 method Methods 0.000 title claims description 29
- 230000007246 mechanism Effects 0.000 claims description 47
- 230000003028 elevating effect Effects 0.000 claims description 26
- 238000005259 measurement Methods 0.000 claims description 20
- 230000000630 rising effect Effects 0.000 claims description 13
- 239000000523 sample Substances 0.000 claims description 13
- 235000012431 wafers Nutrition 0.000 description 39
- 239000007789 gas Substances 0.000 description 33
- 230000008569 process Effects 0.000 description 21
- 239000000463 material Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 230000001174 ascending effect Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000002826 coolant Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/20—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring contours or curvatures, e.g. determining profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/023—Means for mechanically adjusting components not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
[プラズマ処理装置の構成]
図1は、第1実施形態に係るプラズマ処理装置10の構成を示す概略断面図である。プラズマ処理装置10は、気密に構成され、電気的に接地電位とされた処理容器1を有している。処理容器1は、円筒状とされ、例えばアルミニウム等から構成されている。処理容器1は、プラズマが生成される処理空間を画成する。処理容器1内には、被処理体(work-piece)である半導体ウェハ(以下、単に「ウェハ」という。)Wを水平に支持する載置台2が設けられている。載置台2は、ウェハWを載置するだけでなく、ウェハWの周囲に配置されるフォーカスリング5の形状測定に用いられる複数の治具51(図2参照)も順次載置する。複数の治具51の構造については、後述する。載置台2は、基材(ベース)2a及び静電チャック(ESC:Electrostatic chuck)6を含んで構成されている。
次に、図2を参照して、第1実施形態に係る載置台2の要部構成について説明する。図2は、第1実施形態に係る載置台2の要部構成を示す概略断面図である。
次に、制御部100について詳細に説明する。図3は、第1実施形態に係るプラズマ処理装置10を制御する制御部100の概略的な構成を示すブロック図である。制御部100は、プロセスコントローラ110、ユーザインタフェース120及び記憶部130を有する。
次に、第1実施形態に係るプラズマ処理装置10を用いたフォーカスリング5の形状測定方法について説明する。図10は、第1実施形態に係るフォーカスリング5の形状測定処理の流れの一例を示すフローチャートである。このフォーカスリング5の形状測定処理は、例えば、ウェハWに対するプラズマ処理が終了したタイミングで実行される。
2 載置台
2a 基材
2e 載置面
5 フォーカスリング
6 静電チャック
6c 載置面
10 プラズマ処理装置
51、52 治具
51a、52a 対向部
53 プローブ
63 リフターピン
64 昇降機構
100 制御部
111 取得部
112 計測部
113 厚さ算出部
114 出力部
131 間隔情報
W ウェハ
Claims (7)
- 被処理体の周囲に配置されるリング部材の形状測定に用いられる複数の治具であって、各々が前記リング部材の上面と対向する対向部を有し、前記リング部材の径方向における前記対向部の位置が互いに異なる前記複数の治具を順次載置する第1の載置面と、前記リング部材を載置する第2の載置面とを有する載置台と、
前記第2の載置面に対して前記リング部材を昇降させる昇降機構と、
前記第2の載置面と前記第1の載置面に載置された前記複数の治具の各々の前記対向部との間隔寸法を示す間隔情報を取得する取得部と、
前記第1の載置面に前記複数の治具の各々が載置された状態で、前記昇降機構により前記リング部材を上昇させ、前記対向部に前記リング部材の上面が接触する場合に、前記第2の載置面からの前記リング部材の上昇距離を計測する計測部と、
取得された前記間隔情報により示される前記間隔寸法と、計測された前記リング部材の上昇距離とに基づき、前記リング部材の径方向の複数の位置の各々での、前記リング部材の厚さを算出する厚さ算出部と、
を有する、プラズマ処理装置。 - 算出された、前記リング部材の径方向の複数の位置の各々での、前記リング部材の厚さに基づき、前記リング部材の厚さ分布を示す情報を出力する出力部をさらに有する、請求項1に記載のプラズマ処理装置。
- 前記間隔寸法は、前記第2の載置面と前記第1の載置面との間の距離と、前記第1の載置面と前記第1の載置面に載置された前記複数の治具の各々の前記対向部との間の距離とに基づき、予め決定される、請求項1に記載のプラズマ処理装置。
- 前記載置台には、前記第1の載置面に順次載置される前記複数の治具の各々を吸着する静電チャックが設けられ、
前記計測部は、前記第1の載置面に順次載置される前記複数の治具の各々が前記静電チャックにより吸着された状態で、前記昇降機構により前記リング部材を上昇させる、請求項1〜3のいずれか一つに記載のプラズマ処理装置。 - 前記昇降機構は、前記リング部材の周方向の複数の位置にそれぞれ設けられ、
前記計測部は、前記リング部材の周方向の複数の位置にそれぞれ設けられた前記昇降機構により前記リング部材を上昇させ、前記対向部に前記リング部材の上面が接触する場合に、前記リング部材の周方向の複数の位置の各々について、前記第2の載置面からの前記リング部材の上昇距離を計測し、
前記厚さ算出部は、取得された前記間隔情報により示される前記間隔寸法と、計測された前記リング部材の上昇距離とに基づき、前記リング部材の周方向の複数の位置の各々について、前記リング部材の径方向の複数の位置の各々での、前記リング部材の厚さを算出する、請求項1〜4のいずれか一つに記載のプラズマ処理装置。 - 被処理体の周囲に配置されるリング部材の形状測定に用いられる治具であって、前記リング部材の上面と対向する対向部を有し、前記対向部に、上下方向に移動可能な複数のプローブが前記リング部材の径方向に沿って設けられた前記治具を載置する第1の載置面と、前記リング部を載置する第2の載置面とを有する載置台と、
前記第2の載置面に対して前記リング部材を昇降させる昇降機構と、
前記第2の載置面と前記第1の載置面に載置された前記治具の前記対向部との間隔寸法を示す間隔情報を取得する取得部と、
前記第1の載置面に前記治具が載置された状態で、前記昇降機構により前記リング部材を上昇させるとともに、上昇中の前記リング部材で前記複数のプローブを押し上げ、前記対向部に前記リング部材の上面が接触する場合に、前記第2の載置面からの前記リング部材の上昇距離を計測する計測部と、
取得された前記間隔情報により示される前記間隔寸法と、計測された前記リング部材の上昇距離とに基づき、前記リング部材の形状測定の基準となる前記リング部材の厚さである基準厚さを算出する厚さ算出部と、
を有し、
前記リング部材の形状測定において、前記対向部に対する、前記複数のプローブの突出量がそれぞれ計測され、前記基準厚さから前記複数のプローブの突出量が減算されることで、前記リング部材の径方向の複数の位置の各々での、前記リング部材の厚さが算出される、プラズマ処理装置。 - 被処理体の周囲に配置されるリング部材の形状測定に用いられる複数の治具であって、各々が前記リング部材の上面と対向する対向部を有し、前記リング部材の径方向における前記対向部の位置が互いに異なる前記複数の治具を順次載置する第1の載置面と、前記リング部材を載置する第2の載置面とを有する載置台の前記第1の載置面に前記複数の治具を順次載置し、
前記第2の載置面と前記第1の載置面に載置された前記複数の治具の各々の前記対向部との間隔寸法を示す間隔情報を取得し、
前記第1の載置面に前記複数の治具の各々が載置された状態で、前記第2の載置面に対して前記リング部材を昇降させる昇降機構により前記リング部材を上昇させ、前記対向部に前記リング部材の上面が接触する場合に、前記第2の載置面からの前記リング部材の上昇距離を計測し、
取得された前記間隔情報により示される前記間隔寸法と、計測された前記リング部材の上昇距離とに基づき、前記リング部材の径方向の複数の位置の各々での、前記リング部材の厚さを算出する、
処理を含む、リング部材の形状測定方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018214701A JP2020087969A (ja) | 2018-11-15 | 2018-11-15 | プラズマ処理装置、及びリング部材の形状測定方法 |
TW108140169A TW202027164A (zh) | 2018-11-15 | 2019-11-06 | 電漿處理裝置及環構件之形狀測定方法 |
CN201911100050.6A CN111192811A (zh) | 2018-11-15 | 2019-11-12 | 等离子体处理装置和环部件的形状测量方法 |
KR1020190146073A KR20200056942A (ko) | 2018-11-15 | 2019-11-14 | 플라즈마 처리 장치, 및 링 부재의 형상 측정 방법 |
US16/683,920 US20200161101A1 (en) | 2018-11-15 | 2019-11-14 | Plasma processing apparatus and method for measuring shape of ring member |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018214701A JP2020087969A (ja) | 2018-11-15 | 2018-11-15 | プラズマ処理装置、及びリング部材の形状測定方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2020087969A true JP2020087969A (ja) | 2020-06-04 |
Family
ID=70709138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018214701A Ceased JP2020087969A (ja) | 2018-11-15 | 2018-11-15 | プラズマ処理装置、及びリング部材の形状測定方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20200161101A1 (ja) |
JP (1) | JP2020087969A (ja) |
KR (1) | KR20200056942A (ja) |
CN (1) | CN111192811A (ja) |
TW (1) | TW202027164A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7076351B2 (ja) * | 2018-10-03 | 2022-05-27 | 東京エレクトロン株式会社 | プラズマ処理装置、及びリング部材の厚さ測定方法 |
KR102585286B1 (ko) * | 2020-10-15 | 2023-10-05 | 세메스 주식회사 | 기판 처리 장치 및 소모성 부품의 마모도 측정 방법 |
CN114927461B (zh) * | 2022-07-01 | 2023-08-18 | 北京北方华创微电子装备有限公司 | 晶圆承载装置和半导体工艺设备 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109662A (ja) * | 1991-10-15 | 1993-04-30 | Nec Kyushu Ltd | 枚葉式プラズマエツチング装置 |
JP2002176030A (ja) * | 2000-12-07 | 2002-06-21 | Semiconductor Leading Edge Technologies Inc | プラズマエッチング装置、及びプラズマエッチング方法 |
JP2011507274A (ja) * | 2007-12-14 | 2011-03-03 | 東京エレクトロン株式会社 | プラズマエッチングシステム用の炭化珪素焦点リング |
JP2016146472A (ja) * | 2015-01-16 | 2016-08-12 | ラム リサーチ コーポレーションLam Research Corporation | 半導体ウエハ処理中におけるエッジ処理制御のための可動式エッジ連結リング |
JP2017183701A (ja) * | 2016-03-29 | 2017-10-05 | ラム リサーチ コーポレーションLam Research Corporation | エッジリング特性評価を実行するためのシステムおよび方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6355108B1 (en) * | 1999-06-22 | 2002-03-12 | Applied Komatsu Technology, Inc. | Film deposition using a finger type shadow frame |
JP2005203729A (ja) * | 2003-12-19 | 2005-07-28 | Ebara Corp | 基板研磨装置 |
US10312121B2 (en) * | 2016-03-29 | 2019-06-04 | Lam Research Corporation | Systems and methods for aligning measurement device in substrate processing systems |
US10634479B2 (en) * | 2016-06-20 | 2020-04-28 | Tokyo Electron Limited | Measuring instrument for measuring electrostatic capacity and method of calibrating transfer position data in processing system by using measuring instrument |
JP7076351B2 (ja) * | 2018-10-03 | 2022-05-27 | 東京エレクトロン株式会社 | プラズマ処理装置、及びリング部材の厚さ測定方法 |
JP2020115499A (ja) * | 2019-01-17 | 2020-07-30 | 東京エレクトロン株式会社 | プラズマ処理装置、及びリング部材の位置ずれ測定方法 |
KR102689653B1 (ko) * | 2019-06-26 | 2024-07-31 | 삼성전자주식회사 | 센서 모듈 및 이를 구비하는 식각 장치 |
-
2018
- 2018-11-15 JP JP2018214701A patent/JP2020087969A/ja not_active Ceased
-
2019
- 2019-11-06 TW TW108140169A patent/TW202027164A/zh unknown
- 2019-11-12 CN CN201911100050.6A patent/CN111192811A/zh not_active Withdrawn
- 2019-11-14 US US16/683,920 patent/US20200161101A1/en not_active Abandoned
- 2019-11-14 KR KR1020190146073A patent/KR20200056942A/ko not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109662A (ja) * | 1991-10-15 | 1993-04-30 | Nec Kyushu Ltd | 枚葉式プラズマエツチング装置 |
JP2002176030A (ja) * | 2000-12-07 | 2002-06-21 | Semiconductor Leading Edge Technologies Inc | プラズマエッチング装置、及びプラズマエッチング方法 |
JP2011507274A (ja) * | 2007-12-14 | 2011-03-03 | 東京エレクトロン株式会社 | プラズマエッチングシステム用の炭化珪素焦点リング |
JP2016146472A (ja) * | 2015-01-16 | 2016-08-12 | ラム リサーチ コーポレーションLam Research Corporation | 半導体ウエハ処理中におけるエッジ処理制御のための可動式エッジ連結リング |
JP2017183701A (ja) * | 2016-03-29 | 2017-10-05 | ラム リサーチ コーポレーションLam Research Corporation | エッジリング特性評価を実行するためのシステムおよび方法 |
Also Published As
Publication number | Publication date |
---|---|
US20200161101A1 (en) | 2020-05-21 |
KR20200056942A (ko) | 2020-05-25 |
CN111192811A (zh) | 2020-05-22 |
TW202027164A (zh) | 2020-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7055054B2 (ja) | プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム | |
US10186402B2 (en) | Measurement system and measurement method | |
US10020172B2 (en) | Plasma processing apparatus, plasma processing method and storage medium for storing program for executing the method | |
CN109659216B (zh) | 等离子体处理装置、聚焦环的升降控制方法和程序 | |
US10103011B2 (en) | Plasma processing method and plasma processing apparatus | |
US9021984B2 (en) | Plasma processing apparatus and semiconductor device manufacturing method | |
KR102676476B1 (ko) | 플라즈마 처리 장치, 및 링 부재의 두께 측정 방법 | |
US8383000B2 (en) | Substrate processing apparatus, method for measuring distance between electrodes, and storage medium storing program | |
US20190304824A1 (en) | Plasma processing apparatus and method of transferring workpiece | |
US20200234929A1 (en) | Plasma processing apparatus and method for measuring misalignment of ring member | |
JP2020087969A (ja) | プラズマ処理装置、及びリング部材の形状測定方法 | |
US10825662B2 (en) | Method for driving member and processing apparatus | |
KR102675696B1 (ko) | 플라스마 처리 장치의 이상 검지 방법 및 플라스마 처리 장치 | |
TW202114029A (zh) | 邊緣環、載置台、基板處理裝置及基板處理方法 | |
JP2021057572A (ja) | 基板支持器及びプラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210714 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220421 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220510 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220629 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220802 |
|
A045 | Written measure of dismissal of application [lapsed due to lack of payment] |
Free format text: JAPANESE INTERMEDIATE CODE: A045 Effective date: 20221220 |