JP2020086389A - 光部品、及びこれを用いた光モジュール - Google Patents
光部品、及びこれを用いた光モジュール Download PDFInfo
- Publication number
- JP2020086389A JP2020086389A JP2018225301A JP2018225301A JP2020086389A JP 2020086389 A JP2020086389 A JP 2020086389A JP 2018225301 A JP2018225301 A JP 2018225301A JP 2018225301 A JP2018225301 A JP 2018225301A JP 2020086389 A JP2020086389 A JP 2020086389A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- wiring board
- optical component
- cavity
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 230000003287 optical effect Effects 0.000 title claims abstract description 201
- 239000000919 ceramic Substances 0.000 claims abstract description 11
- 238000005476 soldering Methods 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims 1
- 230000002040 relaxant effect Effects 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 53
- 239000010410 layer Substances 0.000 description 48
- 239000000463 material Substances 0.000 description 32
- 230000035882 stress Effects 0.000 description 24
- 230000005540 biological transmission Effects 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000010949 copper Substances 0.000 description 12
- 239000002335 surface treatment layer Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 239000013307 optical fiber Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000009429 electrical wiring Methods 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 229910020830 Sn-Bi Inorganic materials 0.000 description 3
- 229910018728 Sn—Bi Inorganic materials 0.000 description 3
- 229910018956 Sn—In Inorganic materials 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052839 forsterite Inorganic materials 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- -1 Sn-An-BVi Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
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- H05K1/00—Printed circuits
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- H05K1/111—Pads for surface mounting, e.g. lay-out
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- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10121—Optical component, e.g. opto-electronic component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10734—Ball grid array [BGA]; Bump grid array
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
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Abstract
Description
キャビティを有する絶縁性セラミックスの筐体と、
前記キャビティの中に収容される光回路素子と、
前記キャビティを覆う蓋と、
前記筐体の前記キャビティの外周に配置される突起電極と、
を有し、前記筐体の線膨張係数は前記配線基板の線膨張係数よりも小さく、前記蓋の線膨張係数は前記配線基板の線膨張係数よりも大きい。
アルミナ(筐体) 7ppm/℃
SACはんだ(突起電極) 20ppm/℃
FR−4(配線基板) 13ppm/℃
Cu(配線基板の配線層) 17ppm/℃
CTECASE < CTEPCB < CTELID
を満たす材料で光部品10を形成する。良好な構成例では、蓋15と筐体11を合わせた全体の線膨張係数が、配線基板27の線膨張係数とほぼ等しくなるように設計する。このような条件を満たす蓋15の材料として、Cu,Al、SUS(ステンレス鋼)等を用いることができる。
図8は、光部品10の変形例である光部品10Aの概略図である。光部品10Aでは、蓋15Aの外側の表面に表面処理層151が形成されている。表面処理層151は、たとえばはんだ付けが可能なめっき層である。蓋15Aのキャビティ12に対向する面と反対側の面に表面処理層151を設けることで、蓋15Aを光部品10Aの接合に利用することができる。
図11は、光部品10の別の変形例として、光部品10Bを示す。光部品10Bでは、蓋15Bの外側表面の高さ位置と、はんだボール18の高さ位置を合わせる。別の言い方をすると、蓋15Bの外側表面の位置を、はんだボール18を搭載する筐体11の上端面の位置よりも高くする。
図14は、光部品10を搭載した別の光モジュール1Aの概略図である。光モジュール1Aは、光フロントエンドの機能を有し、たとえば、デジタルコヒーレントトランシーバの構成部品として用いられる。光部品10に替えて、光部品10A、10Bも適用可能である。
(付記1)
配線基板に実装される光部品であって、
キャビティを有する絶縁性セラミックスの筐体と、
前記キャビティの中に収容される光回路素子と、
前記キャビティを覆う蓋と、
前記筐体の前記キャビティの外周に配置される突起電極と、
を有し、前記筐体の線膨張係数は前記配線基板の線膨張係数よりも小さく、前記蓋の線膨張係数は前記配線基板の線膨張係数よりも大きいことを特徴とする光部品。
(付記2)
前記筐体と前記蓋を合わせた全体の線膨張係数は、前記配線基板の線膨張係数と釣り合っていることを特徴とする付記1に記載の光部品。
(付記3)
前記蓋の前記キャビティと反対側の面の高さ位置は、前記突起電極の高さ位置とそろっていることを特徴とする付記1または2に記載の光部品。
(付記4)
前記蓋の前記キャビティと反対側の面の高さ位置は、前記突起電極の高さ位置よりも低いことを特徴とする付記1または2に記載の光部品。
(付記5)
前記蓋の前記キャビティと反対側の面は、はんだ付けを可能にする表面処理が施されていることを特徴とする付記1〜4のいずれかに記載の光部品。
(付記6)
前記筐体の面であって前記蓋と反対側の面は、放熱面であることを特徴とする付記1〜5のいずれかに記載の光部品。
(付記7)
前記突起電極は樹脂コアまたは銅コアのはんだボールであることを特徴とする付記1〜6のいずれかに記載の光部品。
(付記8)
前記突起電極の径は200μm〜250μmであることを特徴とする付記1〜6のいずれかに記載の光部品。
(付記9)
前記筐体には電気配線が形成されており、前記突起電極の少なくとも一部は前記電気配線を介して前記光回路素子に接続されていることを特徴とする付記1〜8のいずれかに記載の光部品。
(付記10)
前記筐体には電気配線が形成されており、前記光回路素子はワイヤボンディングで前記電気配線に接続されていることを特徴とする付記1〜9のいずれかに記載の光部品。
(付記11)
配線基板と、
前記配線基板にフリップチップ実装される光部品と、
を有し、
前記光部品は、
キャビティを有する絶縁性セラミックスの筐体と、
前記キャビティの中に収容される光回路素子と、
前記キャビティを覆う蓋と、
前記筐体の前記キャビティの外周に配置される突起電極と、
を有し、前記筐体の線膨張係数は前記配線基板の線膨張係数よりも小さく、前記蓋の線膨張係数は前記配線基板の線膨張係数よりも大きいことを特徴とする光モジュール。
(付記12)
前記配線基板は、前記突起電極と接合される接続電極の配列と、前記接続電極の配列の内側に配置される接合層とを有し、
前記蓋は、前記接合層に固定されていることを特徴とする付記11に記載の光モジュール。
(付記13)
前記接合層は前記接続電極よりも厚く、
前記接合層の厚さと、前記突起電極の高さはほぼ同じであることを特徴とする付記12に記載の光モジュール。
(付記14)
前記接合層と前記接続電極の厚さは同じであり、
前記光部品の前記蓋の外側表面の高さ位置と前記突起電極の高さ位置がそろっていることを特徴とする付記12に記載の光モジュール。
(付記15)
前記光回路素子は、光電気変換回路と電気光変換回路の少なくとも一方を有し、
前記光部品は、電気回路部品とともに前記配線基板に実装されていることを特徴とする付記11〜14のいずれかに記載の光モジュール。
(付記16)
前記光部品を外部の光配線に接続する光コネクタと、前記電気回路部品を外部の装置に接続する電気コネクタを有することを特徴とする付記15に記載の光モジュール。
2 光伝送装置
10、10A,10B 光部品
11 筐体
12 キャビティ
13 マウント
14 放熱面
15、15A、15B 蓋
151 表面処理層
16、16a〜16c 電気配線
17 ボンディングワイヤ
18、18A はんだボール(突起電極)
20、20A、20B 実装構造
21 パッケージ
22 光源ユニット
23 光コネクタ
24 電気回路部品
25 DSP
105 光回路素子
27、27A,27B 配線基板
273 接続電極
276,278 接合層
Claims (7)
- 配線基板に実装される光部品であって、
キャビティを有する絶縁性セラミックスの筐体と、
前記キャビティの中に収容される光回路素子と、
前記キャビティを覆う蓋と、
前記筐体の前記キャビティの外周に配置される突起電極と、
を有し、前記筐体の線膨張係数は前記配線基板の線膨張係数よりも小さく、前記蓋の線膨張係数は前記配線基板の線膨張係数よりも大きいことを特徴とする光部品。 - 前記筐体と前記蓋を合わせた全体の線膨張係数は、前記配線基板の線膨張係数と釣り合っていることを特徴とする請求項1に記載の光部品。
- 前記蓋の前記キャビティと反対側の面の高さ位置は、前記突起電極の高さ位置とそろっていることを特徴とする請求項1または2に記載の光部品。
- 前記蓋の前記キャビティと反対側の面の高さ位置は、前記突起電極の高さ位置よりも低いことを特徴とする請求項1または2に記載の光部品。
- 前記蓋の前記キャビティと反対側の面は、はんだ付けを可能にする表面処理が施されていることを特徴とする請求項1〜4のいずれか1項に記載の光部品。
- 配線基板と、
前記配線基板にフリップチップ実装される光部品と、
を有し、
前記光部品は、
キャビティを有する絶縁性セラミックスの筐体と、
前記キャビティの中に収容される光回路素子と、
前記キャビティを覆う蓋と、
前記筐体の前記キャビティの外周に配置される突起電極と、
を有し、前記筐体の線膨張係数は前記配線基板の線膨張係数よりも小さく、前記蓋の線膨張係数は前記配線基板の線膨張係数よりも大きいことを特徴とする光モジュール。 - 前記配線基板は、前記突起電極と接合される接続パッドの配列と、前記接続パッドの配列の内側に配置される接合層とを有し、
前記蓋は、前記接合層に固定されていることを特徴とする請求項6に記載の光モジュール。
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US16/695,720 US20200174205A1 (en) | 2018-11-30 | 2019-11-26 | Optical component and optical module using the same |
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JP7013879B2 (ja) * | 2018-01-12 | 2022-02-01 | 住友大阪セメント株式会社 | 光変調器、及びそれを用いた光送信装置 |
WO2022164926A1 (en) * | 2021-01-26 | 2022-08-04 | Nortech Systems, Inc. | Active optical cables |
US20220254750A1 (en) * | 2021-02-05 | 2022-08-11 | Raytheon Company | Ball bond impedance matching |
US20220352099A1 (en) * | 2021-05-03 | 2022-11-03 | Nvidia Corporation | Integrated circuit physical security device |
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US20160315040A1 (en) * | 2015-04-23 | 2016-10-27 | Mk Electron Co., Ltd. | Core for reverse reflow, semiconductor package, and method of fabricating semiconductor package |
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2018
- 2018-11-30 JP JP2018225301A patent/JP7147517B2/ja active Active
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US5032897A (en) * | 1990-02-28 | 1991-07-16 | International Business Machines Corp. | Integrated thermoelectric cooling |
JPH11509372A (ja) * | 1995-07-14 | 1999-08-17 | オリン コーポレイション | 金属ボール・グリッド電子パッケージ |
US6014317A (en) * | 1996-11-08 | 2000-01-11 | W. L. Gore & Associates, Inc. | Chip package mounting structure for controlling warp of electronic assemblies due to thermal expansion effects |
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