JP2020077648A - 熱処理方法および熱処理装置 - Google Patents
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
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Abstract
Description
4 ハロゲンランプハウス
5 フラッシュランプハウス
6 処理チャンバー
7 保持部
10 移載機構
33 タッチパネル
35 磁気ディスク
39 ホストコンピュータ
65 熱処理空間
74 サセプタ
100 熱処理装置
101 インデクサ部
110 ロードポート
110a 第1ロードポート
110b 第2ロードポート
110c 第3ロードポート
120 受渡ロボット
130,140 冷却部
150 搬送ロボット
151a,151b 搬送ハンド
160 熱処理部
C キャリア
DC ダミーキャリア
DW ダミーウェハー
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (6)
- ダミーウェハーの熱処理を管理する熱処理方法であって、
熱処理装置にプロダクトウェハーが到着する事前予告信号を受信する受信工程と、
前記事前予告信号を受信したときに、前記熱処理装置にてダミーウェハーに対する熱処理を開始するダミー処理工程と、
を備えることを特徴とする熱処理方法。 - 請求項1記載の熱処理方法において、
前記ダミー処理工程では、前記熱処理装置に設けられたダミーキャリア専用のロードポートに常時設置されたダミーキャリアから前記ダミーウェハーを搬出して熱処理を行うことを特徴とする熱処理方法。 - 請求項1または請求項2記載の熱処理方法において、
前記ダミー処理工程では、前記プロダクトウェハーに対する熱処理の手順および処理条件を規定したプロダクトレシピに関連付けられたダミーレシピに従って前記ダミーウェハーに対する熱処理を行うことを特徴とする熱処理方法。 - ダミーウェハーの熱処理を管理する熱処理装置であって、
ダミーウェハーに熱処理を行う熱処理部と、
前記熱処理装置にプロダクトウェハーが到着する事前予告信号を受信したときに、前記ダミーウェハーに対する熱処理を開始させる制御部と、
を備えることを特徴とする熱処理装置。 - 請求項4記載の熱処理装置において、
ダミーキャリア専用のロードポートをさらに備え、
前記予告信号を受信したときには、前記ロードポートに常時設置されたダミーキャリアから前記ダミーウェハーを搬出して前記熱処理部に搬送することを特徴とする熱処理装置。 - 請求項4または請求項5記載の熱処理装置において、
前記プロダクトウェハーに対する熱処理の手順および処理条件を規定したプロダクトレシピと前記ダミーウェハーに対する熱処理の手順および処理条件を規定したダミーレシピとを関連付けて記憶する記憶部をさらに備え、
前記予告信号を受信したときには、前記プロダクトレシピに関連付けられた前記ダミーレシピに従って前記ダミーウェハーに対する熱処理を行うことを特徴とする熱処理装置。
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JP2018207869A JP7091227B2 (ja) | 2018-11-05 | 2018-11-05 | 熱処理方法および熱処理装置 |
US16/658,232 US10998207B2 (en) | 2018-11-05 | 2019-10-21 | Heat treatment method and heat treatment apparatus for managing heat treatment of dummy wafer |
KR1020190133783A KR102303333B1 (ko) | 2018-11-05 | 2019-10-25 | 열처리 방법 및 열처리 장치 |
CN201911043743.6A CN111146114A (zh) | 2018-11-05 | 2019-10-30 | 热处理方法及热处理装置 |
TW108139613A TWI754850B (zh) | 2018-11-05 | 2019-11-01 | 熱處理方法及熱處理裝置 |
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JP (1) | JP7091227B2 (ja) |
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JP7316959B2 (ja) * | 2020-03-16 | 2023-07-28 | 東京エレクトロン株式会社 | 半導体製造装置及びウェーハ搬送方法 |
JP2022026758A (ja) | 2020-07-31 | 2022-02-10 | 株式会社Screenホールディングス | 熱処理方法 |
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JP2018148178A (ja) * | 2017-03-09 | 2018-09-20 | 株式会社Screenホールディングス | 熱処理方法 |
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JP3741604B2 (ja) * | 2000-11-27 | 2006-02-01 | 東京エレクトロン株式会社 | 熱処理装置および熱処理方法 |
JP3853302B2 (ja) | 2002-08-09 | 2006-12-06 | 東京エレクトロン株式会社 | 熱処理方法及び熱処理装置 |
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