JP2020034666A - 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 - Google Patents

反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 Download PDF

Info

Publication number
JP2020034666A
JP2020034666A JP2018159970A JP2018159970A JP2020034666A JP 2020034666 A JP2020034666 A JP 2020034666A JP 2018159970 A JP2018159970 A JP 2018159970A JP 2018159970 A JP2018159970 A JP 2018159970A JP 2020034666 A JP2020034666 A JP 2020034666A
Authority
JP
Japan
Prior art keywords
film
reflective mask
absorber
mask blank
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018159970A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020034666A5 (enExample
Inventor
瑞生 片岡
Mizuki KATAOKA
瑞生 片岡
洋平 池邊
Yohei IKEBE
洋平 池邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2018159970A priority Critical patent/JP2020034666A/ja
Priority to US17/265,990 priority patent/US11892768B2/en
Priority to PCT/JP2019/031361 priority patent/WO2020045029A1/ja
Priority to KR1020217002655A priority patent/KR102868783B1/ko
Priority to SG11202101338UA priority patent/SG11202101338UA/en
Priority to TW108130563A priority patent/TWI882961B/zh
Publication of JP2020034666A publication Critical patent/JP2020034666A/ja
Publication of JP2020034666A5 publication Critical patent/JP2020034666A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2018159970A 2018-08-29 2018-08-29 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 Pending JP2020034666A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018159970A JP2020034666A (ja) 2018-08-29 2018-08-29 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
US17/265,990 US11892768B2 (en) 2018-08-29 2019-08-08 Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
PCT/JP2019/031361 WO2020045029A1 (ja) 2018-08-29 2019-08-08 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
KR1020217002655A KR102868783B1 (ko) 2018-08-29 2019-08-08 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법
SG11202101338UA SG11202101338UA (en) 2018-08-29 2019-08-08 Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
TW108130563A TWI882961B (zh) 2018-08-29 2019-08-27 反射型遮罩基底、反射型遮罩及其製造方法、以及半導體裝置之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018159970A JP2020034666A (ja) 2018-08-29 2018-08-29 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2020034666A true JP2020034666A (ja) 2020-03-05
JP2020034666A5 JP2020034666A5 (enExample) 2021-08-26

Family

ID=69644897

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018159970A Pending JP2020034666A (ja) 2018-08-29 2018-08-29 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

Country Status (6)

Country Link
US (1) US11892768B2 (enExample)
JP (1) JP2020034666A (enExample)
KR (1) KR102868783B1 (enExample)
SG (1) SG11202101338UA (enExample)
TW (1) TWI882961B (enExample)
WO (1) WO2020045029A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021110952A (ja) * 2020-01-08 2021-08-02 エスアンドエス テック カンパニー リミテッド 極紫外線用反射型ブランクマスク及びフォトマスク
JP2021173977A (ja) * 2020-04-30 2021-11-01 凸版印刷株式会社 反射型フォトマスクブランクス及び反射型フォトマスク
WO2022264832A1 (ja) * 2021-06-17 2022-12-22 株式会社トッパンフォトマスク 反射型フォトマスク及び反射型フォトマスクの製造方法
US20230375908A1 (en) * 2020-09-28 2023-11-23 Toppan Photomask Co., Ltd. Reflective photomask blank and reflective photomask
JP2024153915A (ja) * 2021-01-08 2024-10-29 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220157439A (ko) * 2020-04-30 2022-11-29 가부시키가이샤 토판 포토마스크 반사형 포토마스크 블랭크 및 반사형 포토마스크
KR102882817B1 (ko) * 2021-06-15 2025-11-07 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
KR102850182B1 (ko) * 2021-06-15 2025-08-25 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
KR20240090667A (ko) * 2021-11-24 2024-06-21 가부시키가이샤 토판 포토마스크 반사형 포토마스크 블랭크 및 반사형 포토마스크
JP7346527B2 (ja) * 2021-11-25 2023-09-19 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法
US20230280644A1 (en) * 2022-03-03 2023-09-07 International Business Machines Corporation Method of making euv mask with an absorber layer

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669185A (ja) * 1992-08-20 1994-03-11 Mitsubishi Electric Corp フォトマスク
JP2002261005A (ja) * 2001-02-20 2002-09-13 Chartered Semiconductor Mfg Ltd 極紫外線マスクの処理方法
JP2002299227A (ja) * 2001-04-03 2002-10-11 Nikon Corp 反射マスクとその製造方法及び露光装置
JP2008535270A (ja) * 2005-03-31 2008-08-28 インテル・コーポレーション 極紫外線マスクの漏れ吸収体
JP2015225280A (ja) * 2014-05-29 2015-12-14 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
US20160223896A1 (en) * 2015-01-30 2016-08-04 Globalfoundries Inc. Method for a low profile etchable euv absorber layer with embedded particles in a photolithography mask
WO2018074512A1 (ja) * 2016-10-21 2018-04-26 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
WO2018135468A1 (ja) * 2017-01-17 2018-07-26 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2317382B1 (en) * 2002-04-11 2016-10-26 Hoya Corporation Reflective mask blank, reflective mask and methods of producing the mask blank and the mask
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP2004207593A (ja) 2002-12-26 2004-07-22 Toppan Printing Co Ltd 極限紫外線露光用マスク及びブランク並びにパターン転写方法
US7049035B2 (en) * 2003-11-17 2006-05-23 International Business Machines Corporation Method for controlling linewidth in advanced lithography masks using electrochemistry
JP4465405B2 (ja) * 2008-02-27 2010-05-19 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスク並びにこれらの製造方法
JP5282507B2 (ja) 2008-09-25 2013-09-04 凸版印刷株式会社 ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクの製造方法、ハーフトーン型ｅｕｖマスクブランク及びパターン転写方法
US8765331B2 (en) * 2012-08-17 2014-07-01 International Business Machines Corporation Reducing edge die reflectivity in extreme ultraviolet lithography
KR101772943B1 (ko) * 2015-08-17 2017-09-12 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
TWI821984B (zh) * 2016-07-27 2023-11-11 美商應用材料股份有限公司 具有合金吸收劑的極紫外線遮罩坯料及製造極紫外線遮罩坯料的方法
SG11201907622YA (en) * 2017-03-02 2019-09-27 Hoya Corp Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669185A (ja) * 1992-08-20 1994-03-11 Mitsubishi Electric Corp フォトマスク
JP2002261005A (ja) * 2001-02-20 2002-09-13 Chartered Semiconductor Mfg Ltd 極紫外線マスクの処理方法
JP2002299227A (ja) * 2001-04-03 2002-10-11 Nikon Corp 反射マスクとその製造方法及び露光装置
JP2008535270A (ja) * 2005-03-31 2008-08-28 インテル・コーポレーション 極紫外線マスクの漏れ吸収体
JP2015225280A (ja) * 2014-05-29 2015-12-14 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
US20160223896A1 (en) * 2015-01-30 2016-08-04 Globalfoundries Inc. Method for a low profile etchable euv absorber layer with embedded particles in a photolithography mask
WO2018074512A1 (ja) * 2016-10-21 2018-04-26 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
WO2018135468A1 (ja) * 2017-01-17 2018-07-26 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021110952A (ja) * 2020-01-08 2021-08-02 エスアンドエス テック カンパニー リミテッド 極紫外線用反射型ブランクマスク及びフォトマスク
US11815801B2 (en) 2020-01-08 2023-11-14 S & S Tech Co., Ltd. Reflective type blankmask and photomask for EUV
JP2021173977A (ja) * 2020-04-30 2021-11-01 凸版印刷株式会社 反射型フォトマスクブランクス及び反射型フォトマスク
JP7695775B2 (ja) 2020-04-30 2025-06-19 テクセンドフォトマスク株式会社 反射型フォトマスクブランクス及び反射型フォトマスク
US20230375908A1 (en) * 2020-09-28 2023-11-23 Toppan Photomask Co., Ltd. Reflective photomask blank and reflective photomask
JP2024153915A (ja) * 2021-01-08 2024-10-29 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
WO2022264832A1 (ja) * 2021-06-17 2022-12-22 株式会社トッパンフォトマスク 反射型フォトマスク及び反射型フォトマスクの製造方法
JP2023000073A (ja) * 2021-06-17 2023-01-04 株式会社トッパンフォトマスク 反射型フォトマスク及び反射型フォトマスクの製造方法

Also Published As

Publication number Publication date
TW202027130A (zh) 2020-07-16
WO2020045029A1 (ja) 2020-03-05
KR102868783B1 (ko) 2025-10-13
TWI882961B (zh) 2025-05-11
KR20210043563A (ko) 2021-04-21
SG11202101338UA (en) 2021-03-30
US20210311382A1 (en) 2021-10-07
US11892768B2 (en) 2024-02-06

Similar Documents

Publication Publication Date Title
US12111566B2 (en) Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
US11237472B2 (en) Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
US20240036458A1 (en) Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
KR102868783B1 (ko) 반사형 마스크 블랭크, 반사형 마스크 및 그 제조 방법, 그리고 반도체 장치의 제조 방법
US11187972B2 (en) Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
US20190369483A1 (en) Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask and method for manufacturing semiconductor device
US20220091498A1 (en) Reflection-type mask blank, reflection-type mask and method for manufacturing same, and method for manufacturing semiconductor device
JP2020034666A5 (enExample)
WO2022138360A1 (ja) 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2019070854A (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2024048387A1 (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP6440996B2 (ja) 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
JP2016046370A5 (enExample)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210622

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210622

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220426

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20220620

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220824

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20221025

C60 Trial request (containing other claim documents, opposition documents)

Free format text: JAPANESE INTERMEDIATE CODE: C60

Effective date: 20230124

C116 Written invitation by the chief administrative judge to file amendments

Free format text: JAPANESE INTERMEDIATE CODE: C116

Effective date: 20230207

C22 Notice of designation (change) of administrative judge

Free format text: JAPANESE INTERMEDIATE CODE: C22

Effective date: 20230207