JP2019532518A5 - - Google Patents

Download PDF

Info

Publication number
JP2019532518A5
JP2019532518A5 JP2019531857A JP2019531857A JP2019532518A5 JP 2019532518 A5 JP2019532518 A5 JP 2019532518A5 JP 2019531857 A JP2019531857 A JP 2019531857A JP 2019531857 A JP2019531857 A JP 2019531857A JP 2019532518 A5 JP2019532518 A5 JP 2019532518A5
Authority
JP
Japan
Prior art keywords
measurement
measurement system
value
parameters
model
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2019531857A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019532518A (ja
JP6801110B2 (ja
Filing date
Publication date
Priority claimed from US15/649,843 external-priority patent/US10458912B2/en
Application filed filed Critical
Publication of JP2019532518A publication Critical patent/JP2019532518A/ja
Publication of JP2019532518A5 publication Critical patent/JP2019532518A5/ja
Application granted granted Critical
Publication of JP6801110B2 publication Critical patent/JP6801110B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2019531857A 2016-08-31 2017-08-16 異方性誘電率を用いた半導体構造のモデル依拠光学計測 Active JP6801110B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662381987P 2016-08-31 2016-08-31
US62/381,987 2016-08-31
US15/649,843 2017-07-14
US15/649,843 US10458912B2 (en) 2016-08-31 2017-07-14 Model based optical measurements of semiconductor structures with anisotropic dielectric permittivity
PCT/US2017/047159 WO2018044572A1 (en) 2016-08-31 2017-08-16 Model based optical measurements of semiconductor structures with anisotropic dielectric permittivity

Publications (3)

Publication Number Publication Date
JP2019532518A JP2019532518A (ja) 2019-11-07
JP2019532518A5 true JP2019532518A5 (enExample) 2020-09-24
JP6801110B2 JP6801110B2 (ja) 2020-12-16

Family

ID=61242207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019531857A Active JP6801110B2 (ja) 2016-08-31 2017-08-16 異方性誘電率を用いた半導体構造のモデル依拠光学計測

Country Status (7)

Country Link
US (1) US10458912B2 (enExample)
JP (1) JP6801110B2 (enExample)
KR (1) KR102269517B1 (enExample)
CN (1) CN109643672B (enExample)
IL (1) IL264571B (enExample)
TW (1) TWI728179B (enExample)
WO (1) WO2018044572A1 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016208264A1 (de) * 2016-05-13 2017-11-16 Trumpf Werkzeugmaschinen Gmbh + Co. Kg Verfahren und Vorrichtung zur Überwachung, insbesondere zur Regelung, eines Schneidprozesses
US11156548B2 (en) 2017-12-08 2021-10-26 Kla-Tencor Corporation Measurement methodology of advanced nanostructures
US11036898B2 (en) 2018-03-15 2021-06-15 Kla-Tencor Corporation Measurement models of nanowire semiconductor structures based on re-useable sub-structures
US11054250B2 (en) * 2018-04-11 2021-07-06 International Business Machines Corporation Multi-channel overlay metrology
JP6830464B2 (ja) * 2018-09-26 2021-02-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法および記録媒体。
WO2020080758A1 (ko) 2018-10-15 2020-04-23 주식회사 고영테크놀러지 검사를 위한 장치, 방법 및 명령을 기록한 기록 매체
DE102018220629A1 (de) 2018-11-29 2020-06-04 Carl Zeiss Smt Gmbh Spiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage mit einem Spektralfilter in Form einer Gitterstruktur und Verfahren zur Herstellung eines Spektralfilters in Form einer Gitterstruktur auf einem Spiegel
CN109580551A (zh) * 2018-11-30 2019-04-05 武汉颐光科技有限公司 一种傅里叶变换红外穆勒矩阵椭偏仪及其测量方法
US11060846B2 (en) 2018-12-19 2021-07-13 Kla Corporation Scatterometry based methods and systems for measurement of strain in semiconductor structures
CN111380464B (zh) * 2018-12-28 2021-05-07 上海微电子装备（集团）股份有限公司 一种光栅尺的安装装置、安装方法、光栅测量系统及光刻机
US11060982B2 (en) * 2019-03-17 2021-07-13 Kla Corporation Multi-dimensional model of optical dispersion
CN112067559B (zh) * 2019-06-11 2023-06-13 南开大学 材料光学常数的确定方法、材料数据库的扩展方法及装置
CN110416106B (zh) * 2019-07-30 2022-05-27 上海华力集成电路制造有限公司 Ocd测试图形结构及其制造方法
US11966203B2 (en) * 2019-08-21 2024-04-23 Kla Corporation System and method to adjust a kinetics model of surface reactions during plasma processing
US11460418B2 (en) 2019-08-26 2022-10-04 Kla Corporation Methods and systems for semiconductor metrology based on wavelength resolved soft X-ray reflectometry
CN110596011B (zh) * 2019-08-26 2020-12-29 华中科技大学 一种材料介电张量测量方法
KR20220103713A (ko) * 2019-11-28 2022-07-22 에베 그룹 에. 탈너 게엠베하 기판 측정 장치 및 방법
US11698251B2 (en) 2020-01-07 2023-07-11 Kla Corporation Methods and systems for overlay measurement based on soft X-ray Scatterometry
CN111595812B (zh) * 2020-05-29 2021-06-22 复旦大学 基于动量空间色散关系的关键参数的量测方法和系统
CN114097067B (zh) * 2020-06-22 2025-12-02 株式会社日立高新技术 尺寸计测装置、半导体制造装置以及半导体装置制造系统
KR102825817B1 (ko) * 2020-08-28 2025-06-30 삼성전자주식회사 두께 추정 방법 및 공정 제어 방법
US12013355B2 (en) 2020-12-17 2024-06-18 Kla Corporation Methods and systems for compact, small spot size soft x-ray scatterometry
KR102857866B1 (ko) * 2021-02-10 2025-09-11 주식회사 히타치하이테크 윤곽선 해석 장치, 처리 조건 결정 시스템, 형상 추정 시스템, 반도체 장치 제조 시스템, 탐색 장치 및 그들에 이용하는 데이터 구조
CN113420260B (zh) * 2021-07-01 2022-10-28 深圳市埃芯半导体科技有限公司 一种半导体尺寸的测量计算方法、装置及计算机存储介质
CN113643237A (zh) * 2021-07-13 2021-11-12 上海华力集成电路制造有限公司 一种利用SEM review图像分析晶圆面内CD均一性的方法
JP2024530580A (ja) 2021-07-26 2024-08-23 ルーマス リミテッド 内部ファセット間の平行性の光学に基づく検証
TW202311706A (zh) * 2021-07-26 2023-03-16 以色列商魯姆斯有限公司 用於驗證內部小平面之間的平行度的方法和系統
CN114018820B (zh) * 2021-09-14 2023-04-07 深圳市埃芯半导体科技有限公司 光学测量方法、装置、系统及存储介质
US12111355B2 (en) * 2021-11-22 2024-10-08 Onto Innovation Inc. Semiconductor substrate yield prediction based on spectra data from multiple substrate dies
US12322620B2 (en) 2021-12-14 2025-06-03 Kla Corporation Reflective waveplates for pupil polarization filtering
CN114898824B (zh) * 2022-03-15 2024-12-03 上海科技大学 使用机器学习构建非标准复杂材料色散模型的方法
US12379672B2 (en) 2023-05-11 2025-08-05 Kla Corporation Metrology of nanosheet surface roughness and profile
US12372882B2 (en) 2023-06-30 2025-07-29 Kla Corporation Metrology in the presence of CMOS under array (CUA) structures utilizing an effective medium model with classification of CUA structures
US12380367B2 (en) 2023-06-30 2025-08-05 Kla Corporation Metrology in the presence of CMOS under array (CuA) structures utilizing machine learning and physical modeling
KR20250050573A (ko) 2023-10-06 2025-04-15 한국과학기술원 강유전체 나노구조의 3차원 분극분포 분석 방법

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0720216B1 (en) 1994-12-29 2001-10-17 AT&T Corp. Linewidth metrology of integrated circuit structures
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US6734967B1 (en) 1995-01-19 2004-05-11 Kla-Tencor Technologies Corporation Focused beam spectroscopic ellipsometry method and system
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US5969273A (en) 1998-02-12 1999-10-19 International Business Machines Corporation Method and apparatus for critical dimension and tool resolution determination using edge width
US5943122A (en) 1998-07-10 1999-08-24 Nanometrics Incorporated Integrated optical measurement instruments
US6031614A (en) * 1998-12-02 2000-02-29 Siemens Aktiengesellschaft Measurement system and method for measuring critical dimensions using ellipsometry
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US7139083B2 (en) 2000-09-20 2006-11-21 Kla-Tencor Technologies Corp. Methods and systems for determining a composition and a thickness of a specimen
US6895075B2 (en) 2003-02-12 2005-05-17 Jordan Valley Applied Radiation Ltd. X-ray reflectometry with small-angle scattering measurement
WO2003054475A2 (en) 2001-12-19 2003-07-03 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6816570B2 (en) 2002-03-07 2004-11-09 Kla-Tencor Corporation Multi-technique thin film analysis tool
US7330279B2 (en) * 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US7414721B1 (en) * 2002-12-23 2008-08-19 Lsi Corporation In-situ metrology system and method for monitoring metalization and other thin film formation
US7515253B2 (en) * 2005-01-12 2009-04-07 Kla-Tencor Technologies Corporation System for measuring a sample with a layer containing a periodic diffracting structure
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
JP4363368B2 (ja) * 2005-06-13 2009-11-11 住友電気工業株式会社 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法
JP4988223B2 (ja) * 2005-06-22 2012-08-01 株式会社日立ハイテクノロジーズ 欠陥検査装置およびその方法
WO2007049259A1 (en) * 2005-10-24 2007-05-03 Optical Metrology Patents Limited An optical measurement apparatus and method
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
US7324193B2 (en) * 2006-03-30 2008-01-29 Tokyo Electron Limited Measuring a damaged structure formed on a wafer using optical metrology
US8798966B1 (en) 2007-01-03 2014-08-05 Kla-Tencor Corporation Measuring critical dimensions of a semiconductor structure
US7755764B2 (en) 2007-01-26 2010-07-13 Kla-Tencor Corporation Purge gas flow control for high-precision film measurements using ellipsometry and reflectometry
US7907264B1 (en) 2007-09-07 2011-03-15 Kla-Tencor Corporation Measurement of thin film porosity
US7929667B1 (en) 2008-10-02 2011-04-19 Kla-Tencor Corporation High brightness X-ray metrology
US8577820B2 (en) 2011-03-04 2013-11-05 Tokyo Electron Limited Accurate and fast neural network training for library-based critical dimension (CD) metrology
US8711349B2 (en) * 2011-09-27 2014-04-29 Kla-Tencor Corporation High throughput thin film characterization and defect detection
US9228943B2 (en) 2011-10-27 2016-01-05 Kla-Tencor Corporation Dynamically adjustable semiconductor metrology system
US10088413B2 (en) * 2011-11-21 2018-10-02 Kla-Tencor Corporation Spectral matching based calibration
US10354929B2 (en) * 2012-05-08 2019-07-16 Kla-Tencor Corporation Measurement recipe optimization based on spectral sensitivity and process variation
US10013518B2 (en) * 2012-07-10 2018-07-03 Kla-Tencor Corporation Model building and analysis engine for combined X-ray and optical metrology
US9581430B2 (en) 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US8860937B1 (en) 2012-10-24 2014-10-14 Kla-Tencor Corp. Metrology systems and methods for high aspect ratio and large lateral dimension structures
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
US10101670B2 (en) 2013-03-27 2018-10-16 Kla-Tencor Corporation Statistical model-based metrology
US9875946B2 (en) 2013-04-19 2018-01-23 Kla-Tencor Corporation On-device metrology
US10079183B2 (en) * 2013-06-26 2018-09-18 Kla-Tenor Corporation Calculated electrical performance metrics for process monitoring and yield management
US9383661B2 (en) 2013-08-10 2016-07-05 Kla-Tencor Corporation Methods and apparatus for determining focus
US10935893B2 (en) 2013-08-11 2021-03-02 Kla-Tencor Corporation Differential methods and apparatus for metrology of semiconductor targets
US10624612B2 (en) * 2014-06-05 2020-04-21 Chikayoshi Sumi Beamforming method, measurement and imaging instruments, and communication instruments
US10072921B2 (en) * 2014-12-05 2018-09-11 Kla-Tencor Corporation Methods and systems for spectroscopic beam profile metrology having a first two dimensional detector to detect collected light transmitted by a first wavelength dispersive element

Similar Documents

Publication Publication Date Title
JP2019532518A5 (enExample)
Abadie et al. Calibration of the LIGO gravitational wave detectors in the fifth science run
CA2897690C (en) Systems and methods for detecting crack growth
US9841383B2 (en) Multiscale uniformity analysis of a material
JP2014528579A5 (enExample)
DE112014006304T5 (de) Filmdickenmessverfahren und Filmdickenmessvorrichtung
EP3229000A1 (en) Spectrometry device and spectrometry method
US20180292316A1 (en) Spectrometry device and spectrometry method
Rautiainen et al. A note on upscaling coniferous needle spectra to shoot spectral albedo
Ziad et al. Temporal characterization of atmospheric turbulence with the generalized seeing monitor instrument
Etxebeste et al. 3D position determination in monolithic crystals coupled to SiPMs for PET
Müller et al. Remote nanoscopy with infrared elastic hyperspectral lidar
Xu et al. Comparison of NDVI data between GF-1 PMS1 and ZY-3 MUX sensors
Langmann et al. Increasing the accuracy of Time-of-Flight cameras for machine vision applications
US10480935B2 (en) Thickness mapping using multispectral imaging
JP7014394B2 (ja) 温度測定方法及び装置
Khalesi et al. Uncertainty model for ndvi estimation from multispectral camera measurements
Miao et al. Random error analysis of normalized Fourier coefficient in dual-rotating compensator Mueller matrix ellipsometer
Chen et al. Portable instrument to measure the average luminance coefficient of a road surface
Liukaityte et al. Measurements of angular and spectral resolved scattering on complex optical coatings
Yuan et al. The design of color spectrophotometer based on diffuse illumination and compatible SCE/SCI geometric condition
WO2016061910A1 (zh) 一种双入射狭缝光谱仪的设计方法以及双入射狭缝光谱仪
US20150358588A1 (en) Optimizing detection of known light sources
Pines et al. Automated calibration pipeline for agricultural sUAS based remote sensing
Ishida et al. Quantitative measurement of biological substances in daily-life environment with the little-finger-size one-shot spectroscopic tomography