JP2019519107A - グラフォエピタキシー方法のための機能化されたガイドパターンを形成する方法 - Google Patents
グラフォエピタキシー方法のための機能化されたガイドパターンを形成する方法 Download PDFInfo
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- JP2019519107A JP2019519107A JP2018562099A JP2018562099A JP2019519107A JP 2019519107 A JP2019519107 A JP 2019519107A JP 2018562099 A JP2018562099 A JP 2018562099A JP 2018562099 A JP2018562099 A JP 2018562099A JP 2019519107 A JP2019519107 A JP 2019519107A
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Abstract
Description
− ブロック共重合体に対して第1の化学的親和性を有する第1の材料からなる第1の機能化層を基板上に形成すること。
− 第1の機能化層上に保護層を堆積させること。
− 保護層上にガイドパターンを形成し、ガイドパターンは、保護層上に開口している少なくとも1つのキャビティを備え、キャビティは、底部および側壁を備えること。
− イオン衝撃への露出によってキャビティの底部に位置する保護層の一部分に10未満の原子番号を有するイオンを注入し、保護層の注入された一部分が、保護層の非注入部分に対して選択的にエッチングされるようにすること。
− キャビティ内に、ブロック共重合体に対して第2の化学的親和性を有する第2の材料からなる第2の機能化層を形成し、第2の機能化層は、キャビティの底部において保護層上に配置された第1の部分と、キャビティの側壁上に配置された第2の部分とを備えること。
− 第2の機能化層を形成するステップは、イオン注入ステップの後に生じ得る。またはの場合、
− 第2の機能化層を形成するステップは、イオン注入ステップの前に生じ得る。
− 好適にはスピンコーティングによって、第1のポリマーの層を堆積させること。
− 好適には熱焼き鈍しまたは光架橋によって、第1のポリマーの層を基板上にグラフトすること。
− 溶媒を用いてリンスすること。
− 保護層上に少なくとも1つのベース層を堆積させること。
− リソグラフィーによってベース層をエッチングすること。
− 保護層上にSOC(スピンオンカーボン)層を堆積させること。
− 架橋焼き鈍しすること。
− SOC層上にSiARC(珪素含有反射防止膜)架橋層を堆積させること。
− 架橋焼き鈍しすること。
− SiARC層に樹脂層を堆積させること。
− 樹脂パターンを形成すること。
− 樹脂パターンをSiARC/SOC層へエッチングにより転写して、ガイドパターンを形成すること。
− イオン注入は、プラズマへの露出によって実行され、注入されたイオンは、水素および/またはヘリウムを備えている。この場合、注入は、乾式エッチング反応器において、または、プラズマ浸漬反応器において、実行され得る。この実施形態は、この改質方法が、保護層の改質された部分を物理的にスパッタすることによって消耗しない限り、保護層の一部分を、保護層の非改質部分に対して選択的にエッチングできるように改質することを可能にし、
− イオン注入は、イオンビームへの露出によって実行され得、注入されたイオンは、以下の種のうちの1つを備える:Ar、H、He、N2。
− プラズマから塩を形成する第1のサブステップ。
− 塩の昇華である第2のサブステップ。
− 気相エッチングは、エッチングされるべき層の上に、溶媒中に希釈された気相のフッ化水素酸を注入するステップを備え得る。
− 気相エッチングは、以下のサブステップを備え得る:
〇エッチングされるべき層が配置された反応チャンバ内にフッ化水素酸のガスを注入すること。
〇反応チャンバ内に不活性ガスを注入すること。
− 前記生成物を、好適には水である脱離溶液に可溶化するステップと、および/または、
− 100℃から300℃の間からなる温度で焼き鈍しするステップとを備え得る。
− ガイドパターンを完全に覆う第2のポリマーの層を形成するように、第2のポリマーの層を堆積させること。この堆積は、好適には、スピンコーティングによって実行される。
− 好適には熱焼き鈍しまたは光架橋によって、キャビティ内に第2のポリマーの層をグラフトすること。
− 溶媒を使用してリンスすること。
図1aから図1fは、本発明の1つの実施形態によるグラフォエピタキシーのためのガイドパターンを製造する方法のステップを表す。
− 保護層3上に1つまたは複数の層を堆積させること。
− 少なくとも1つのキャビティ7を、好適にはリソグラフィーによって、たとえばフォトリソグラフィーによって、この層またはこれらの層を介して製造すること。
水素系のプラズマ、ヘリウム系のプラズマ、ならびに二水素およびヘリウム系のプラズマ
について、SiN層の厚さに応じて、および、使用されるプラズマに応じて、使用するバイアス電力を与える。
− プラズマから塩を形成する第1のサブステップ。
− 塩の昇華からなる第2のサブステップ。
− 30℃において45秒間、50cm3/分から300cm3/分の間からなるNH3の流量で実行されるプラズマによって塩を形成するサブステップ。
− 180℃において1分間の焼き鈍しによって塩を昇華させるステップ。
− PS−b−PMMA:ポリスチレン−ブロック−ポリメチルメタクリレート。
− PS−b−PLA:ポリスチレン−ブロック−ポリ乳酸。
− PS−b−PEO:ポリスチレン−ブロック−ポリエチレンオキシド。
− PS−b−PDMS:ポリスチレン−ブロック−ポリジメチルシロキサン。
− PS−b−PMMA−b−PEO:ポリスチレン−ブロック−ポリメチルメタクリレート−ブロック−ポリエチレンオキシド。
− PS−b−P2VP:ポリスチレン−ブロック−ポリ(2−ビニルピリジン)。
Claims (18)
- ブロック共重合体の自己集合のために意図された機能化されたガイドパターンを、グラフォエピタキシーによって形成する方法であって、以下のステップ、
− ブロック共重合体に対して第1の化学的親和性を有する第1の材料からなる第1の機能化層(2)を基板(1)上に形成すること(101)と、
− 第1の機能化層(2)上に保護層(3)を堆積させること(102)と、
− 保護層(3)上にガイドパターン(4)を形成し(103)、ガイドパターン(4)は、保護層(3)上に開口している少なくとも1つのキャビティ(7)を備え、キャビティ(7)は、底部(6)および側壁(5)を備えることと、
− イオン衝撃への露出によってキャビティの底部に位置する保護層(3)の一部分(9)に10未満の原子番号を有するイオンを注入し(104)、保護層の注入された一部分(9)が、保護層の非注入部分(8)に対して選択的にエッチングされるようにすることと、
− キャビティ(7)内に、ブロック共重合体に対して第2の化学的親和性を有する第2の材料からなる第2の機能化層(10)を形成し(105)、第2の機能化層(10)は、キャビティの底部(6)において保護層(3)上に配置された第1の部分(11)と、キャビティの側壁(5)上に配置された第2の部分(12)とを備えることと、
− キャビティの底部に位置する第1の機能化層の一部分(13)を露出させるように、保護層の注入された一部分(9)と、第2の機能化層(10)の第1の部分(11)を、保護層(3)の非注入部分(8)、第2の機能化層(10)の第2の部分(12)、および第1の機能化層(2)に対して、選択的にエッチングすること(106)とを備える、方法。 - ガイドパターン(4)を形成するステップ(103)が、以下のサブステップ、
− 保護層上に少なくとも1つのベース層を堆積させることと、
− リソグラフィーによってベース層をエッチングすることとを備える、請求項1に記載の方法。 - ベース層が、300℃未満の温度、好適には、250℃未満の温度で堆積される、請求項2に記載の方法。
- ベース層が炭素を備える、請求項2または3に記載の方法。
- 保護層(3)が、珪素を備える誘電性無機材料の層である、請求項1から4のいずれか一項に記載の方法。
- イオン注入が、プラズマへの露出によって実行され、注入されたイオンが、水素および/またはヘリウムを備える、請求項1から5のいずれか一項に記載の方法。
- イオン注入が、イオンビームへの露出によって実行され、注入されたイオンは、以下の種、すなわち、Ar、H、He、N2のうちの1つを備える、請求項1から5のいずれか一項に記載の方法。
- 選択的なエッチングが、フッ化水素酸系またはリン酸系のエッチング溶液を使用して実行される湿式エッチングである、請求項1から7のいずれか一項に記載の方法。
- 選択的なエッチングが、リモートプラズマを使用して実行される乾式エッチングであり、エッチングするステップが、以下のサブステップ、
− プラズマから塩を形成する第1のサブステップと、
− 塩の昇華からなる第2のサブステップとを備える、請求項1から7のいずれか一項に記載の方法。 - 塩が、フッ素および水素系のプラズマから形成される、請求項9に記載の方法。
- 塩が、焼き鈍しによって昇華される、請求項9または10に記載の方法。
- 選択的なエッチングが、気相エッチングである、請求項1から7のいずれか一項に記載の方法。
- 気相エッチングが、エッチングされるべき層の上に、溶媒中に希釈された気相のフッ化水素酸を注入するステップを備える、請求項12に記載の方法。
- 気相エッチングが、以下のサブステップ、
− エッチングされるべき層が配置された反応チャンバ内にフッ化水素酸のガスを注入することと、
− 反応チャンバ内に不活性ガスを注入することとを備える、請求項12に記載の方法。 - 気相エッチングステップの前に、予備焼き鈍しステップをさらに備える、請求項12から14のいずれか一項に記載の方法。
- 気相エッチングが、不揮発性反応生成物を形成し、方法はさらに、気相エッチング中に形成される不揮発性反応生成物を除去するステップを備え、不揮発性反応生成物を除去するステップは、
− 前記生成物を、好適には水である脱離溶液に可溶化するステップと、および/または、
− 100℃から300℃の間からなる温度で焼き鈍しするステップとを備える、請求項12から15のいずれか一項に記載の方法。 - 請求項1から16のいずれか一項にしたがって機能化されたガイドパターンを形成する方法と、ブロック共重合体をキャビティ内に堆積させるステップとを備える、グラフォエピタキシー方法。
- ブロック共重合体が、少なくとも2つのモノマーブロックを備え、第1の機能化層は、すべてのモノマーブロックと同等の親和性を有し、第2の機能化層は、モノマーブロックのうちの1つと優先的な親和性を有する、請求項17に記載のグラフォエピタキシー方法。
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