JP2019513161A - 研磨システム、並びにその製造方法及び使用方法 - Google Patents
研磨システム、並びにその製造方法及び使用方法 Download PDFInfo
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- JP2019513161A JP2019513161A JP2018543208A JP2018543208A JP2019513161A JP 2019513161 A JP2019513161 A JP 2019513161A JP 2018543208 A JP2018543208 A JP 2018543208A JP 2018543208 A JP2018543208 A JP 2018543208A JP 2019513161 A JP2019513161 A JP 2019513161A
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- Prior art keywords
- polishing
- abrasive
- ceramic
- substrate
- polishing system
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Abstract
Description
本開示は、基材の研磨に有用な研磨溶液及びかかる研磨溶液の使用方法に関する。
超硬基材の研磨には、様々な物品、システム及び方法が導入されてきた。このような物品、システム、及び方法は、例えば、C.Z.Li et.al.,Proc.IMechE Vol.225 Part B:J.Engineering Manufacture、及びY.Wang,et.al,Advanced Materials Research Vols.126−128 (2010) pp429−434 (2010) Trans Tech Publications,Switzerlandに記載されている。
いくつかの実施形態において、研磨システムが提供される。システムは、研磨される基材と、研磨パッドとを含む。
定義
本明細書で使用する場合、単数形「a」、「an」及び「the」は、その内容が特に明確に指示しない限り、複数の指示対象を含むものとする。本明細書及び添付の実施形態において使用される場合、用語「又は」は、その内容が特に明確に指示しない限り、一般的に「及び/又は」を包含する意味で用いられる。
除去速度試験方法 1
研磨前及び研磨後のサファイアウェハを重力測定法で測定した。測定された重量損失を用い、ウェハ密度3.98g/cm3に基づいて、除去された材料の量を決定した。片面研磨の場合、ミクロン/分で報告された除去速度は、指定された研磨間隔にわたる3つのウェハの平均板厚減少である。両面研磨の場合、ミクロン/分で報告された除去速度は、指定された研磨間隔にわたる9つのうちの3つのウェハの平均板厚減少である。
表面粗さ測定(Ra、Rmax、及びRzを含む)は、KLA−Tencor Corporation(Milpitas,California)から入手可能な触針を有する表面形状測定装置、モデルP−16+を使用して行った。
研磨は、Peter Wolters AC500、Lapmaster Wolters、Rendsburg,Germany、両面ラップ工具を使用して行った。両面PSAを用いた研磨機の外径18.31インチ(46.5cm)、内径7インチ(17.8cm)の底部プラテンに、外径18.31インチ(46.5cm)、内径7インチ(17.8cm)のパッドを装着した。トップパッドは、スラリーを加工物及び底部パッドまで移動させるための上部プラテンの穴パターンに位置合わせした16×1cmのスラリー孔を除いて同様である。プラテンは、両方とも時計回りの方向に60rpmで回転した。直径5.1cmのウェハを保持する寸法にそれぞれ調整された、3つの丸穴を含む3つのエポキシガラスキャリアを、底部パッド上に設け、ツールギヤに位置合わせした。凹部中心点は、互いに等距離に位置し、キャリアの中心に対してずれており、これにより、キャリアが回転したとき、各凹部の中心点が、パッド/プラテンエッジをオーバーハングしているウェハエッジの1cmを有する円で回転すると考えられる。直径5.1cm×厚さ0.5cmの3つのA面サファイアウェハを、3つのキャリアの凹部のそれぞれに取り付け、研磨した。バッチ当たり合計9つのウェハでバッチ当たり3つのキャリアを30分間動作した。ウェハに最も高い荷重を加え、4psiの研磨圧を達成した。初期段階は、20秒間、20daNで、回転速度60rpmの時計回りの走行に設定した。リングギヤも、時計周りの方向で、8に設定した。第2段階は、30分間で52daNに設定し、最終段階は、20秒間で20daNに設定した。スラリー流は、6g/分で一定であった。
研磨は、Engis Corp.of 105W(Hinz Rd.,Wheeling,IL 60090)から入手可能なEngis Model FL15研磨機を使用して実施した。両面PSAを用いて、直径15インチ(38.1cm)の研磨機のプラテンに、直径15インチ(38.1cm)のパッドを取り付けた。プラテンを50rpmで回転させた。研磨機のヘッドは、掃引運動なしで、40rpmにて回転させた。直径5.1cmのウェハを保持する寸法にそれぞれ調整された、3つの凹部を備えるキャリアをヘッドに取り付けた。凹部の中心点は、互いに等距離に位置し、ヘッドの中心に対してずれており、これにより、ヘッドが回転したとき、各凹部の中心点が13.5cmの外周を有する円で回転すると考えられる。直径5.1cm×厚さ0.5cmの3つのA面サファイアウェハをキャリアの凹部に取り付け、研磨した。研磨時間は30分であった。4psiの研磨圧を達成するために、30.7lbs(13.9kg)の重りを使用してウェハに荷重を加えた。スラリーの流量は1g/分であり、パッドの中心から約4cmの地点においてパッドに滴下された。
セラミック研磨材複合体を以下の噴霧乾燥技術を用いて水性分散液から調製した。49gのStandex230を1,100gの脱イオン水に加え、連続的に攪拌した。10分後、720gのGFを1分の時間間隔で添加した。GFは、使用前に、約4.2ミクロンの粒子サイズに砕かれていたことに留意されたい。次に、880gのMCD3Aを、継続的に攪拌しながら溶液に加えた。次に、溶液を、GEA Process Engineering A/S(Soborg,Denmark)から入手可能なMOBILE MINER 2000遠心噴霧機内で噴霧化した。噴霧化ホイールを20,000rpmで動作させた。空気は、噴霧化チャンバに200℃で供給し、液滴を形成しながら液滴を乾燥させるために用いて、噴霧乾燥したセラミック研磨材複合体を作製した。次いで、回収した複合体をAlOxと混合し、65/35の複合体/AlOx(重量/重量)の粉末ブレンドを形成した。この粉末ブレンドを750℃にて1時間にわたってガラス化した。冷却後、ガラス化したセラミック研磨材複合体を、約63ミクロンの開口部を有する従来型のふるいに通した。約63ミクロン以下の粒子サイズを有する、回収したガラス化セラミック研磨材複合体をCAC−1とした。
脱イオン水462gに、28.5gのCarbopol Aqua30を添加し、密閉容器を約20rpmで転がすことによって緩やかに3分間混合した。グリセロール1388gを水混合液に添加し、30分間、気泡を巻き込まないように注意しながら緩やかに混合した。Kathon1.9gを水/グリセロール溶液に添加し、緩やかに15分間混合した。18%の水酸化ナトリウム及び水溶液8.5gを加え、粘性溶液を緩やかに30分間混合した。
スラリーは、10gのCAC−1及び990gの潤滑剤を含有するグリセロール/水溶液を形成することによって調製した。溶液を、使用前に、従来型の高剪断ミキサーを用いて約3分間混合した。
ポリカーボネートの両面に442KW両面接着剤を含む30ミル厚のポリカーボネートシート上に、25×25インチのGen IIパッドシート41−9103−5040−8を、Gen IIパッド面を上にして貼り合わせた。次に、パッドをダイカットして、適切な工具プラテンを取り付けた。
25×25インチのシートの指定されたシート又はフィルム材の片面を、Primer 94極薄コーティングで処理した(表1参照)。次に、指定されたシート又はフィルム材のプライム化された面を、剥離ライナーが未積層面に保持された300LSE両面接着剤のシートで貼り合わせた。CE1の25×25インチのGen II Padの上面を、Primer 94極薄コーティングで処理した。剥離ライナーを、300LSE積層シート又はフィルム材から外し、次いでCE1のプライム化Gen II Padと貼り合わせた。次に、パッドをダイカットして、適切な工具プラテンを取り付けた。
CE1の25×25インチのGen IIパッドの上面を、Primer 94極薄コーティングで処理した。接着剤と共に供給された25×25インチのシートの指定されたシート又はフィルム材(表1参照)から剥離ライナーを外し、次いでCE1のプライム化Gen II Padと貼り合わせた。次に、パッドをダイカットして、適切な工具プラテンを取り付けた。
両面に442kw接着剤を含む、直径15インチ、中心穴1インチを有するポリカーボネートの円形シートを、15インチのアルミニウムプラテンに取り付けた。次いで、442接着剤の最上層を、上接着面に粒子を塗り広げることによって、YSZ研磨媒体1mmで改質した。YSZ粒子の単層は、媒体粒子間に約1mmの平均キャビティがある接着層に付着している。堆積された粒子を、コーティングされたポリカーボネートシート及びプラテンを反転することにより容易に除去した。粒子球の頂部で15インチの反転アルミニウムプラテンを適用することにより、粒子を接着剤に圧着させた。これは、24時間の接着を築かせた。上部のアルミニウムプラテンを除去し、直径15インチのUHMWPE(2ミル)シートを、接着剤面をYSZ粒子に付着させたYSZ粒子上に適用した。ゴム製のハンドローラを使用して、フィルムを緩やかにロールで伸ばした。アルミニウム板を、更に24時間、UHMWPEフィルム上に適用した。上部プラテンを除去し、研磨試験方法−2に従ってパッドを試験した。
両面に442kw接着剤を含む直径15インチの、1インチの中心穴を有するポリカーボネートの円形シートを、15インチのアルミニウムプラテンに取り付けた。次に、外径15インチ及び内径1インチの穴を有するポリプロピレン変性ステムウェブの円形シートを、ステム側を上向きにして442接着剤の最上層に貼り付けた。次に、パッドのステム側を、Primer94に浸漬したw/aペイントブラシで全面をブラシした。このパッドを12時間乾燥させた。最後に、ステムウェブ上に、内径1インチの穴及び2ミルの厚さを有する直径15インチのUHMWPEシートを適用した。このパッドは試験しなかった。
例CE1〜24の研磨試験は、研磨試験方法−1、除去速度試験方法−1、表面粗さ試験方法−1、及びスラリー−1を用いて表1に示すパッド上で実行した。試験結果を表2に列挙する。例25は、研磨試験方法−2で実行した。
Claims (16)
- 研磨される基材と、
基層及び耐摩耗性層を含む研磨パッドと、
前記研磨パッドと前記基材との間に配置された研磨溶液と
を含む、研磨システムであって、
前記研磨溶液が、流体成分及び複数のセラミック研磨材複合体を含み、
前記セラミック研磨材複合体が、多孔質セラミックマトリックス全体にわたって均一に分散された個々の研磨粒子を含み、
前記多孔質セラミックマトリックスの少なくとも一部が、ガラス質セラミック材料を含み、
前記セラミック研磨材複合体が、前記流体成分中に分散されている、研磨システム。 - 前記基層が、前記基材の最も近くに位置する第1の主面を有し、前記耐摩耗性層が、前記基層の前記第1の主面上に配置されている、請求項1に記載の研磨システム。
- 前記耐摩耗性層が、超高分子量ポリエチレンを含む、請求項1に記載の研磨システム。
- 前記耐摩耗性層が、1〜5ミルの平均厚さを有する、請求項1に記載の研磨システム。
- 前記基層が高分子である、請求項1に記載の研磨システム。
- 前記基層がポリプロピレンを含む、請求項1に記載の研磨システム。
- 前記研磨パッドが、前記基層の前記主面のうちいずれか又は両方から前記基層へ延びている複数のキャビティを更に含む、請求項1に記載の研磨システム。
- 前記流体成分が、エチレングリコール、プロピレングリコール、グリセロール、又はエチレングリコールのオリゴマーを含む、請求項1に記載の研磨システム。
- 前記研磨粒子が、ダイヤモンド、立方晶窒化ホウ素、溶融酸化アルミニウム、セラミック酸化アルミニウム、熱処理済み酸化アルミニウム、炭化ケイ素、炭化ホウ素、アルミナジルコニア、酸化鉄、セリア、又はガーネットを含む、請求項1に記載の研磨システム。
- 前記研磨粒子がダイヤモンドを含む、請求項1に記載の研磨システム。
- 前記セラミック研磨材複合体が、500ミクロン未満の平均粒径を有する、請求項1に記載の研磨システム。
- 前記セラミック研磨材複合体の平均サイズが、前記研磨粒子の平均サイズの少なくとも約5倍である、請求項1に記載の研磨システム。
- 前記多孔質セラミックマトリックスが、酸化アルミニウム、酸化ホウ素、酸化ケイ素、酸化マグネシウム、酸化ナトリウム、酸化マンガン、又は酸化亜鉛を含むガラスを含む、請求項1に記載の研磨システム。
- 前記流体成分中の前記研磨材複合体の濃度が、0.065重量%〜6.5重量%である、請求項1に記載の研磨システム。
- 前記多孔質セラミックマトリックスが、少なくとも40重量%のガラス質セラミック材料を含む、請求項1に記載の研磨システム。
- 基材を研磨する方法であって、
研磨される基材を準備することと、
基層及び耐摩耗性層を含む研磨パッドを準備することと、
流体成分及び複数のセラミック研磨材複合体を含む研磨溶液を準備することであって、前記セラミック研磨材複合体が、多孔質セラミックマトリックス全体にわたって均一に分散された個々の研磨粒子を含み、
前記多孔質セラミックマトリックスの少なくとも一部が、ガラス質セラミック材料を含み、
前記セラミック研磨材複合体が、前記流体成分中に分散されている、研磨溶液を準備することと、
前記基材と前記研磨パッドとの間に前記研磨溶液を位置決めすることと、
前記基材が研磨されるように、前記基材及び前記研磨パッドを互いに対して動かすことと
を含む、方法。
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KR102278257B1 (ko) | 2017-03-27 | 2021-07-15 | 쇼와덴코머티리얼즈가부시끼가이샤 | 슬러리 및 연마 방법 |
CN111819263A (zh) | 2018-03-22 | 2020-10-23 | 日立化成株式会社 | 研磨液、研磨液套剂和研磨方法 |
WO2020021680A1 (ja) | 2018-07-26 | 2020-01-30 | 日立化成株式会社 | スラリ及び研磨方法 |
WO2021061510A1 (en) * | 2019-09-24 | 2021-04-01 | Fujifilm Electronic Materials U.S.A., Inc. | Polishing compositions and methods of use thereof |
KR20220083728A (ko) | 2019-10-15 | 2022-06-20 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 연마 조성물 및 이의 사용 방법 |
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JP2015188987A (ja) * | 2014-03-28 | 2015-11-02 | 富士紡ホールディングス株式会社 | 研磨パッド |
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WO2017142805A1 (en) | 2017-08-24 |
KR20180112004A (ko) | 2018-10-11 |
TW201742136A (zh) | 2017-12-01 |
US20210189175A1 (en) | 2021-06-24 |
CN108603076A (zh) | 2018-09-28 |
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