JP2019509622A - 真空チャンバ内で基板キャリアを搬送するための装置、基板の真空処理のためのシステム、及び真空チャンバ内で基板キャリアを搬送するための方法 - Google Patents
真空チャンバ内で基板キャリアを搬送するための装置、基板の真空処理のためのシステム、及び真空チャンバ内で基板キャリアを搬送するための方法 Download PDFInfo
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67715—Changing the direction of the conveying path
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/6773—Conveying cassettes, containers or carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
Abstract
【選択図】図1A
Description
該装置は、基板キャリアのための第1の搬送経路を提供する第1のトラック、及び第1のトラック上の第1の位置から(第1のトラックから離れた)1以上の第2の位置へ基板キャリアを非接触方式で移動させるように構成された移送デバイスを含む。1以上の第2の位置は、第2のトラック上の位置と基板を処理するための処理位置のうちの少なくとも一方を含む。移送デバイスは、第1の位置から1以上の第2の位置へ基板キャリアを非接触方式で移動させるために、基板キャリアに作用する磁力を提供するように構成された、少なくとも1つの第1の磁石デバイスを含む。
Claims (15)
- 真空チャンバ内で基板キャリアを搬送するための装置であって、
前記基板キャリアのための第1の搬送経路を提供する第1のトラック、及び
前記第1のトラック上の第1の位置から、前記第1のトラックから離れた1以上の第2の位置へ、前記基板キャリアを非接触方式で移動させるように構成された移送デバイスを備え、
前記1以上の第2の位置が、第2のトラック上の位置と基板を処理するための処理位置のうちの少なくとも一方を含み、前記移送デバイスが、
前記第1の位置から前記1以上の第2の位置へ前記基板キャリアを非接触方式で移動させるために、前記基板キャリアに作用する磁力を提供するように構成された、少なくとも1つの第1の磁石デバイスを備える、装置。 - 前記移送デバイスが、前記第1の搬送経路の方向とは異なる方向に、特に、前記第1の搬送経路と垂直な方向に、前記基板キャリアを非接触方式で移動させるように構成されている、請求項1に記載の装置。
- 前記少なくとも1つの第1の磁石デバイスが、前記第1の位置から前記1以上の第2の位置へ前記基板キャリアを押すために、前記基板キャリアに作用する反発する磁力を提供するように構成されている、請求項1又は2に記載の装置。
- 前記第2のトラックが、前記第1の搬送経路に平行な第2の搬送経路を提供する、請求項1から3のいずれか一項に記載の装置。
- 前記移送デバイスが、前記第1のトラック又は前記第2のトラックに沿った前記基板キャリアの搬送中に、前記基板キャリアの少なくとも一部分を非接触方式でガイドするように更に構成されている、請求項1から4のいずれか一項に記載の装置。
- 前記少なくとも1つの第1の磁石デバイスが、
第1の磁場を生成するように構成された1以上の第1の磁石ユニット、及び
前記第1の磁場とは異なる第2の磁場を生成するように構成された1以上の第2の磁石ユニットを含む、請求項1から5のいずれか一項に記載の装置。 - 前記装置が、前記基板キャリアに作用する前記磁力を提供するために、前記第1の磁場と前記第2の磁場のうちの少なくとも一方の磁場を調整するように構成されている、請求項6に記載の装置。
- 前記装置が、前記少なくとも1つの第1の磁石デバイスから所定の距離をおいて前記基板キャリアを維持するために、前記第1の磁場と前記第2の磁場のうちの少なくとも一方の磁場を調整するように構成されている、請求項6又は7に記載の装置。
- 前記1以上の第1の磁石ユニットが永久磁石であり、且つ、前記1以上の第2の磁石ユニットが電磁石であり、或いは、前記1以上の第1の磁石ユニットが電磁石であり、且つ、前記1以上の第2の磁石ユニットが永久磁石である、請求項6から8のいずれか一項に記載の装置。
- 前記装置が、前記1以上の第1の磁石ユニット又は前記1以上の第2の磁石ユニットのうちの少なくとも一方の電磁石を励磁又は励磁解除することによって、前記第1の磁場と前記第2の磁場のうちの少なくとも一方の磁場を変更するように構成されている、請求項9に記載の装置。
- 前記1以上の第2位置から前記第1の位置へ前記基板キャリアを非接触方式で移動させるために、前記基板キャリアに作用する磁力を提供するように構成された、少なくとも1つの第2の磁石デバイスを更に備える、請求項1から10のいずれか一項に記載の装置。
- 前記第1のトラックと前記第2のトラックが、前記少なくとも1つの第1の磁石デバイスと前記少なくとも1つの第2の磁石デバイスとの間に設けられている、請求項11に記載の装置。
- 前記真空チャンバ内で前記基板キャリアを非接触方式で浮揚させるように構成された磁気浮揚システムを更に備える、請求項1から12のいずれか一項に記載の装置。
- 基板を真空処理するためのシステムであって、
真空チャンバと、
請求項1から13のいずれか一項に記載の装置と、
前記第1のトラックと前記第2のトラックのうちの少なくとも一方に沿って配置された1以上の処理ツールとを備え、前記1以上の処理ツールが、スパッタ源、表面処理ツール、加熱デバイス、洗浄デバイス、エッチングツール、及びそれらの任意の組み合わせから成る群から選択されている、システム。 - 真空チャンバ内で基板キャリアを搬送するための方法であって、
前記基板キャリアに作用する反発する磁力を提供すること、及び
前記基板キャリアのための第1の搬送経路を提供する第1のトラック上の第1の位置から、前記第1のトラックから離れた第2の位置へ、前記基板キャリアを非接触方式で移動させることを含み、
前記第2の位置が、第2のトラック上の位置と基板を処理するための処理位置のうちの少なくとも一方である、方法。
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PCT/EP2016/050908 WO2017125123A1 (en) | 2016-01-18 | 2016-01-18 | Apparatus for transportation of a substrate carrier in a vacuum chamber, system for vacuum processing of a substrate, and method for transportation of a substrate carrier in a vacuum chamber |
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JP2019509622A true JP2019509622A (ja) | 2019-04-04 |
JP6681994B2 JP6681994B2 (ja) | 2020-04-15 |
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US (1) | US10636687B2 (ja) |
EP (1) | EP3405973A1 (ja) |
JP (1) | JP6681994B2 (ja) |
KR (1) | KR102204234B1 (ja) |
CN (1) | CN108475654B (ja) |
TW (1) | TWI630679B (ja) |
WO (1) | WO2017125123A1 (ja) |
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WO2022158351A1 (ja) * | 2021-01-25 | 2022-07-28 | 東京エレクトロン株式会社 | 基板の搬送を行う装置、基板を処理するシステム及び基板を処理する方法 |
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WO2019037873A1 (en) * | 2017-08-25 | 2019-02-28 | Applied Materials, Inc. | LIFTING OR LOWERING ASSEMBLY OF A SUPPORT, APPARATUS FOR TRANSPORTING A SUPPORT IN A VACUUM CHAMBER, AND METHOD OF LIFTING OR LOWERING A SUPPORT |
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CN109716499B (zh) * | 2017-08-25 | 2024-03-08 | 应用材料公司 | 用于在真空腔室内运输载体的设备及用于在真空腔室内运输载体的方法 |
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JP6681994B2 (ja) | 2020-04-15 |
WO2017125123A1 (en) | 2017-07-27 |
US10636687B2 (en) | 2020-04-28 |
CN108475654A (zh) | 2018-08-31 |
KR20180104050A (ko) | 2018-09-19 |
TWI630679B (zh) | 2018-07-21 |
CN108475654B (zh) | 2022-06-07 |
EP3405973A1 (en) | 2018-11-28 |
TW201727812A (zh) | 2017-08-01 |
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