JP2019500497A5 - - Google Patents
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- Publication number
- JP2019500497A5 JP2019500497A5 JP2018530084A JP2018530084A JP2019500497A5 JP 2019500497 A5 JP2019500497 A5 JP 2019500497A5 JP 2018530084 A JP2018530084 A JP 2018530084A JP 2018530084 A JP2018530084 A JP 2018530084A JP 2019500497 A5 JP2019500497 A5 JP 2019500497A5
- Authority
- JP
- Japan
- Prior art keywords
- sih
- layer
- reaction chamber
- substrate
- manganese
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000011572 manganese Substances 0.000 description 35
- 239000000203 mixture Substances 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 21
- 239000000376 reactant Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000002243 precursor Substances 0.000 description 13
- -1 hydride Silanes Chemical class 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 9
- 229910052748 manganese Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 150000003254 radicals Chemical class 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical group [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- FTZIQBGFCYJWKA-UHFFFAOYSA-N 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium Chemical compound S1C(C)=C(C)N=C1[N+]1=NC(C=2C=CC=CC=2)=NN1C1=CC=CC=C1 FTZIQBGFCYJWKA-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical group [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 150000001343 alkyl silanes Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- BGECDVWSWDRFSP-UHFFFAOYSA-N borazine Chemical compound B1NBNBN1 BGECDVWSWDRFSP-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 239000011541 reaction mixture Substances 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 235000013311 vegetables Nutrition 0.000 description 2
- 239000003039 volatile agent Substances 0.000 description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910017028 MnSi Inorganic materials 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- RRZKHZBOZDIQJG-UHFFFAOYSA-N azane;manganese Chemical group N.[Mn] RRZKHZBOZDIQJG-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000012043 crude product Substances 0.000 description 1
- 108010011222 cyclo(Arg-Pro) Proteins 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AFRJJFRNGGLMDW-UHFFFAOYSA-N lithium amide Chemical compound [Li+].[NH2-] AFRJJFRNGGLMDW-UHFFFAOYSA-N 0.000 description 1
- DLEDOFVPSDKWEF-UHFFFAOYSA-N lithium butane Chemical compound [Li+].CCC[CH2-] DLEDOFVPSDKWEF-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- MZRVEZGGRBJDDB-UHFFFAOYSA-N n-Butyllithium Substances [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/986,313 US10011903B2 (en) | 2015-12-31 | 2015-12-31 | Manganese-containing film forming compositions, their synthesis, and use in film deposition |
| US14/986,313 | 2015-12-31 | ||
| PCT/US2016/066120 WO2017116665A1 (en) | 2015-12-31 | 2016-12-12 | Manganese-containing film forming compositions, their synthesis, and use in film deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019500497A JP2019500497A (ja) | 2019-01-10 |
| JP2019500497A5 true JP2019500497A5 (enExample) | 2020-01-23 |
| JP6941610B2 JP6941610B2 (ja) | 2021-09-29 |
Family
ID=56286180
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018530084A Active JP6941610B2 (ja) | 2015-12-31 | 2016-12-12 | マンガン含有フィルム形成組成物、マンガン含有フィルム形成組成物の合成およびフィルム析出における使用 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10011903B2 (enExample) |
| EP (1) | EP3397789B1 (enExample) |
| JP (1) | JP6941610B2 (enExample) |
| KR (1) | KR102653070B1 (enExample) |
| CN (1) | CN108474113A (enExample) |
| WO (1) | WO2017116665A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9719167B2 (en) * | 2015-12-31 | 2017-08-01 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cobalt-containing film forming compositions, their synthesis, and use in film deposition |
| EP3282037B1 (en) | 2016-08-09 | 2022-12-07 | IMEC vzw | Formation of a transition metal nitride |
| CN111748794A (zh) * | 2019-03-26 | 2020-10-09 | 江苏迈纳德微纳技术有限公司 | 一种二氧化锰纳米复合薄膜材料及其制备方法 |
| US12152300B2 (en) * | 2019-06-17 | 2024-11-26 | Tanaka Kikinzoku Kogyo K.K. | Chemical vapor deposition method using an organomanganese compound as a starting material |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6984591B1 (en) * | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
| JP5290488B2 (ja) | 2000-09-28 | 2013-09-18 | プレジデント アンド フェロウズ オブ ハーバード カレッジ | 酸化物、ケイ酸塩及びリン酸塩の気相成長 |
| US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| US7033560B2 (en) * | 2002-08-30 | 2006-04-25 | Air Products And Chemicals, Inc. | Single source mixtures of metal siloxides |
| JP5461390B2 (ja) * | 2007-05-21 | 2014-04-02 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 半導体用途のための新規金属前駆体 |
| KR20100017171A (ko) * | 2007-05-21 | 2010-02-16 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 반도체 적용을 위한 신규 코발트 전구체 |
| US20090087561A1 (en) * | 2007-09-28 | 2009-04-02 | Advanced Technology Materials, Inc. | Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films |
| US20140066571A1 (en) * | 2011-03-11 | 2014-03-06 | Ube Industries, Ltd. | Polyimide precursor and polyimide |
| TWI615497B (zh) * | 2013-02-28 | 2018-02-21 | 應用材料股份有限公司 | 金屬胺化物沉積前驅物及具有惰性安瓿襯裡之該前驅物的穩定化 |
| US9005704B2 (en) | 2013-03-06 | 2015-04-14 | Applied Materials, Inc. | Methods for depositing films comprising cobalt and cobalt nitrides |
| US9362228B2 (en) | 2013-10-22 | 2016-06-07 | Globalfoundries Inc. | Electro-migration enhancing method for self-forming barrier process in copper metalization |
| WO2017093283A1 (en) * | 2015-12-02 | 2017-06-08 | Basf Se | Process for the generation of thin inorganic films |
-
2015
- 2015-12-31 US US14/986,313 patent/US10011903B2/en active Active
-
2016
- 2016-12-12 CN CN201680076757.6A patent/CN108474113A/zh active Pending
- 2016-12-12 EP EP16882292.2A patent/EP3397789B1/en active Active
- 2016-12-12 JP JP2018530084A patent/JP6941610B2/ja active Active
- 2016-12-12 KR KR1020187020025A patent/KR102653070B1/ko active Active
- 2016-12-12 WO PCT/US2016/066120 patent/WO2017116665A1/en not_active Ceased
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