JP2019503433A5 - - Google Patents
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- JP2019503433A5 JP2019503433A5 JP2018530087A JP2018530087A JP2019503433A5 JP 2019503433 A5 JP2019503433 A5 JP 2019503433A5 JP 2018530087 A JP2018530087 A JP 2018530087A JP 2018530087 A JP2018530087 A JP 2018530087A JP 2019503433 A5 JP2019503433 A5 JP 2019503433A5
- Authority
- JP
- Japan
- Prior art keywords
- sih
- film
- precursor
- reaction chamber
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/986,286 | 2015-12-31 | ||
| US14/986,286 US9719167B2 (en) | 2015-12-31 | 2015-12-31 | Cobalt-containing film forming compositions, their synthesis, and use in film deposition |
| PCT/IB2016/001940 WO2017115138A1 (en) | 2015-12-31 | 2016-12-12 | Cobalt-containing film forming compositions, their synthesis, and use in film deposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019503433A JP2019503433A (ja) | 2019-02-07 |
| JP2019503433A5 true JP2019503433A5 (enExample) | 2020-01-23 |
| JP6956086B2 JP6956086B2 (ja) | 2021-10-27 |
Family
ID=55791519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018530087A Active JP6956086B2 (ja) | 2015-12-31 | 2016-12-12 | コバルト含有フィルム形成組成物、それらの合成およびフィルム析出における使用 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9719167B2 (enExample) |
| EP (1) | EP3397790B1 (enExample) |
| JP (1) | JP6956086B2 (enExample) |
| KR (1) | KR102653603B1 (enExample) |
| CN (1) | CN108431295B (enExample) |
| WO (1) | WO2017115138A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10290540B2 (en) | 2016-11-01 | 2019-05-14 | Versum Materials Us, Llc | Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof |
| US20180134738A1 (en) * | 2016-11-01 | 2018-05-17 | Versum Materials Us, Llc | Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof |
| CN113195783A (zh) * | 2018-12-19 | 2021-07-30 | 恩特格里斯公司 | 在还原共反应剂存在下沉积钨或钼层的方法 |
| TWI819180B (zh) * | 2019-01-17 | 2023-10-21 | 荷蘭商Ａｓｍ 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6984591B1 (en) * | 2000-04-20 | 2006-01-10 | International Business Machines Corporation | Precursor source mixtures |
| JP5290488B2 (ja) | 2000-09-28 | 2013-09-18 | プレジデント アンド フェロウズ オブ ハーバード カレッジ | 酸化物、ケイ酸塩及びリン酸塩の気相成長 |
| US6464779B1 (en) * | 2001-01-19 | 2002-10-15 | Novellus Systems, Inc. | Copper atomic layer chemical vapor desposition |
| US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| KR100539278B1 (ko) * | 2003-09-22 | 2005-12-27 | 삼성전자주식회사 | 코발트 실리사이드막 형성 방법 및 반도체 장치의 제조방법. |
| US20060121192A1 (en) | 2004-12-02 | 2006-06-08 | Jurcik Benjamin J | Liquid precursor refill system |
| US20080132050A1 (en) * | 2006-12-05 | 2008-06-05 | Lavoie Adrien R | Deposition process for graded cobalt barrier layers |
| KR101629965B1 (ko) | 2007-04-09 | 2016-06-13 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 구리 배선용 코발트 질화물층 및 이의 제조방법 |
| KR20100017171A (ko) * | 2007-05-21 | 2010-02-16 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 반도체 적용을 위한 신규 코발트 전구체 |
| US20090246952A1 (en) | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Method of forming a cobalt metal nitride barrier film |
| WO2014052316A1 (en) * | 2012-09-25 | 2014-04-03 | Advanced Technology Materials, Inc. | Cobalt precursors for low temperature ald or cvd of cobalt-based thin films |
| KR102209476B1 (ko) * | 2013-01-31 | 2021-01-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 코발트-함유 화합물, 이의 합성, 및 코발트-함유 필름 침착에서의 용도 |
| US9005704B2 (en) | 2013-03-06 | 2015-04-14 | Applied Materials, Inc. | Methods for depositing films comprising cobalt and cobalt nitrides |
| US9385033B2 (en) * | 2013-09-27 | 2016-07-05 | Intel Corporation | Method of forming a metal from a cobalt metal precursor |
| US9362228B2 (en) | 2013-10-22 | 2016-06-07 | Globalfoundries Inc. | Electro-migration enhancing method for self-forming barrier process in copper metalization |
| US9601431B2 (en) * | 2014-02-05 | 2017-03-21 | Applied Materials, Inc. | Dielectric/metal barrier integration to prevent copper diffusion |
| US10011903B2 (en) * | 2015-12-31 | 2018-07-03 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Manganese-containing film forming compositions, their synthesis, and use in film deposition |
-
2015
- 2015-12-31 US US14/986,286 patent/US9719167B2/en active Active
-
2016
- 2016-12-12 KR KR1020187020024A patent/KR102653603B1/ko active Active
- 2016-12-12 WO PCT/IB2016/001940 patent/WO2017115138A1/en not_active Ceased
- 2016-12-12 EP EP16856458.1A patent/EP3397790B1/en active Active
- 2016-12-12 CN CN201680074877.2A patent/CN108431295B/zh active Active
- 2016-12-12 JP JP2018530087A patent/JP6956086B2/ja active Active
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