JP2019218623A5 - - Google Patents

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JP2019218623A5
JP2019218623A5 JP2018221606A JP2018221606A JP2019218623A5 JP 2019218623 A5 JP2019218623 A5 JP 2019218623A5 JP 2018221606 A JP2018221606 A JP 2018221606A JP 2018221606 A JP2018221606 A JP 2018221606A JP 2019218623 A5 JP2019218623 A5 JP 2019218623A5
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film forming
forming apparatus
evaporation
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本発明の第2態様による成膜装置は、回転する基板の成膜面に蒸着材料を蒸発させて蒸着する成膜装置であって、前記基板の成膜面と対向する面内に配置される複数の蒸発源を
含み、前記複数の蒸発源のそれぞれは、回転軸を中心に放射状に配置された複数のるつぼを有し、前記回転軸を回転中心として回転可能であり、前記複数の蒸発源は、複数の第1るつぼを有する複数の第1蒸発源と、前記各第1蒸発源が有する前記複数の第1るつぼの数よりも少ない数の第2るつぼを有する第2蒸発源とを含み、前記複数の第1蒸発源は、各回転中心が前記面内において前記基板の回転中心軸を中心とする第1円上に配置され、前記第2蒸発源は、前記複数の第1蒸発源のうち隣接する二つの第1蒸発源の間に配置され、かつ、前記第2蒸発源の回転中心が前記隣接する二つの第1蒸発源の回転中心を結ぶ線分と同一直線上に位置しないように配置されることを特徴とする。
The film forming apparatus according to the second aspect of the present invention is a film forming apparatus that evaporates and vapor-films a vapor-deposited material on a film-forming surface of a rotating substrate, and is arranged in a surface facing the film-forming surface of the substrate. Each of the plurality of evaporation sources includes a plurality of evaporation sources, each of which has a plurality of vases radially arranged around a rotation axis, is rotatable about the rotation axis, and the plurality of evaporation sources. Includes a plurality of first evaporation sources having a plurality of first vases and a second evaporation source having a number of second vases less than the number of the plurality of first vases of each of the first evaporative sources. The plurality of first evaporation sources are arranged on a first circle in which each rotation center is centered on the rotation center axis of the substrate in the plane, and the second evaporation source is the plurality of first evaporation sources. Of the two adjacent first evaporation sources, the center of rotation of the second evaporation source is not located on the same straight line as the line connecting the centers of rotation of the two adjacent first evaporation sources. It is characterized by being arranged in such a manner.

Claims (26)

回転する基板の成膜面に蒸着材料を蒸発させて蒸着する成膜装置であって、
前記基板の成膜面と対向する面内に配置される3つ以上の蒸発源を含み、
前記3つ以上の蒸発源のそれぞれは、回転軸を中心に放射状に配置された複数のるつぼを有し、前記回転軸を回転中心として回転可能であり、
前記3つ以上の蒸発源は、前記3つ以上の蒸発源のうちの任意の3つの蒸発源の各回転中心が前記面内において三角形状を成すように配置され、
前記3つ以上の蒸発源のそれぞれの前記複数のるつぼは、蒸着位置に位置する蒸着用るつぼと、予備加熱位置に位置する予備加熱用るつぼを含み、
前記3つ以上の蒸発源のそれぞれの前記蒸着用るつぼは、前記面内において前記基板の回転中心軸から同一の距離に配置されることを特徴とする成膜装置。
A film forming apparatus that evaporates and deposits a vapor deposition material on the film formation surface of a rotating substrate.
It contains three or more evaporation sources arranged in a plane facing the film formation surface of the substrate.
Each of the three or more evaporation sources has a plurality of crucibles radially arranged around a rotation axis, and can rotate around the rotation axis.
The three or more evaporation sources are arranged such that the rotation centers of any three of the three or more evaporation sources form a triangular shape in the plane.
The plurality of crucibles of each of the three or more evaporation sources include a vapor deposition crucible located at the vapor deposition position and a preheating crucible located at the preheating position.
A film forming apparatus, wherein each of the three or more evaporation sources is arranged at the same distance from the rotation center axis of the substrate in the plane.
前記3つ以上の蒸発源のそれぞれの前記回転中心は、前記面内において前記基板の回転中心軸を中心とする同一の円上に配置されることを特徴とする請求項1に記載の成膜装置。 The film formation according to claim 1, wherein the rotation center of each of the three or more evaporation sources is arranged on the same circle centered on the rotation center axis of the substrate in the plane. Device. 前記3つ以上の蒸発源のそれぞれの前記蒸着用るつぼは、前記円よりも内側に配置されることを特徴とする請求項2に記載の成膜装置。 The film forming apparatus according to claim 2, wherein the crucible for vaporization of each of the three or more evaporation sources is arranged inside the circle. 前記3つ以上の蒸発源のそれぞれの前記予備加熱用るつぼは、前記円よりも外側に配置されることを特徴とする請求項2又は請求項3に記載の成膜装置。 The film forming apparatus according to claim 2 or 3, wherein the crucible for preheating of each of the three or more evaporation sources is arranged outside the circle. 前記3つ以上の蒸発源のそれぞれの前記予備加熱用るつぼは、前記基板の回転半径よりも外側に配置されることを特徴とする請求項1〜請求項4のいずれか1項に記載の成膜装置。 The result according to any one of claims 1 to 4, wherein the crucible for preheating of each of the three or more evaporation sources is arranged outside the radius of gyration of the substrate. Membrane device. 前記蒸着位置は、該位置に位置するるつぼが前記基板に向かって蒸着材料を供給する位置であり、
前記予備加熱位置は、該位置に位置するるつぼが前記蒸発源の回転によって前記蒸着位置に移動する前に予熱される位置であることを特徴とする請求項1〜請求項5のいずれか
1項に記載の成膜装置。
The vapor deposition position is a position where the crucible located at the position supplies the vapor deposition material toward the substrate.
The preheating position is any one of claims 1 to 5, wherein the crucible located at the position is a position where the crucible is preheated before moving to the vapor deposition position by the rotation of the evaporation source. The film forming apparatus according to.
回転する基板の成膜面に蒸着材料を蒸発させて蒸着する成膜装置であって、
前記基板の成膜面と対向する面内に配置される複数の蒸発源を含み、
前記複数の蒸発源のそれぞれは、回転軸を中心に放射状に配置された複数のるつぼを有し、前記回転軸を回転中心として回転可能であり、
前記複数の蒸発源は、複数の第1るつぼを有する複数の第1蒸発源と、前記各第1蒸発源が有する前記複数の第1るつぼの数よりも少ない数の第2るつぼを有する第2蒸発源とを含み、
前記複数の第1蒸発源は、各回転中心が前記面内において前記基板の回転中心軸を中心とする第1円上に配置され、
前記第2蒸発源は、前記複数の第1蒸発源のうち隣接する二つの第1蒸発源の間に配置され、かつ、前記第2蒸発源の回転中心が前記隣接する二つの第1蒸発源の回転中心を結ぶ線分と同一直線上に位置しないように配置されることを特徴とする成膜装置。
A film forming apparatus that evaporates and deposits a vapor deposition material on the film formation surface of a rotating substrate.
It contains a plurality of evaporation sources arranged in a plane facing the film forming surface of the substrate.
Each of the plurality of evaporation sources has a plurality of crucibles arranged radially around a rotation axis, and can rotate around the rotation axis.
The plurality of evaporation sources have a plurality of first evaporation sources having a plurality of first evaporation sources and a second having a smaller number of second crucibles than the number of the plurality of first evaporation sources of each of the first evaporation sources. Including evaporation source
The plurality of first evaporation sources are arranged such that each rotation center is arranged in the plane on a first circle centered on the rotation center axis of the substrate.
The second evaporation source is arranged between two adjacent first evaporation sources among the plurality of first evaporation sources, and the rotation center of the second evaporation source is the two adjacent first evaporation sources. A film forming apparatus characterized in that it is arranged so as not to be located on the same straight line as the line segment connecting the center of rotation of the
前記第2蒸発源は、前記各第1蒸発源よりも直径が小さい蒸発源であることを特徴とする請求項7に記載の成膜装置。 The film forming apparatus according to claim 7, wherein the second evaporation source is an evaporation source having a diameter smaller than that of each of the first evaporation sources. 前記第2蒸発源の回転中心は、前記基板の回転中心軸を基準に前記隣接する二つの第1蒸発源の回転中心を結ぶ線分よりも外側に、かつ、前記第1円よりも内側に配置されることを特徴とする請求項7又は請求項8に記載の成膜装置。 The rotation center of the second evaporation source is outside the line segment connecting the rotation centers of the two adjacent first evaporation sources with respect to the rotation center axis of the substrate, and inside the first circle. The film forming apparatus according to claim 7 or 8, wherein the film forming apparatus is arranged. 前記各第1蒸発源の前記第1るつぼおよび前記第2蒸発源の第2るつぼは、それぞれ、蒸着位置に位置する蒸着用るつぼと、予備加熱位置に位置する予備加熱用るつぼとを含み、
前記第1蒸発源および前記第2蒸発源のそれぞれにおいて、前記各蒸着用るつぼは、前記各予備加熱用るつぼよりも前記基板の回転中心軸から近い位置に配置されることを特徴とする請求項7〜請求項9のいずれか一項に記載の成膜装置。
The first crucible of each first evaporation source and the second crucible of the second evaporation source include a vaporization crucible located at a vapor deposition position and a preheating crucible located at a preheating position, respectively.
A claim, wherein in each of the first evaporation source and the second evaporation source, each of the vaporization crucibles is arranged at a position closer to the rotation center axis of the substrate than each of the preheating crucibles. 7. The film forming apparatus according to any one of claims 9.
前記各第1蒸発源の前記各蒸着用るつぼは、前記第1円よりも内側に配置されることを特徴とする請求項10に記載の成膜装置。 The film forming apparatus according to claim 10, wherein the crucible for vapor deposition of each first evaporation source is arranged inside the first circle. 前記各第1蒸発源の前記各予備加熱用るつぼは、前記第1円よりも外側に配置されることを特徴とする請求項10又は請求項11に記載の成膜装置。 The film forming apparatus according to claim 10 or 11, wherein the crucible for preheating of each first evaporation source is arranged outside the first circle. 前記第2蒸発源の前記蒸着用るつぼは、前記基板の回転中心軸を基準に前記第2蒸発源の回転中心よりも内側に配置されることを特徴とする請求項10〜請求項12のいずれか一項に記載の成膜装置。 Any of claims 10 to 12, wherein the vaporization pot of the second evaporation source is arranged inside the rotation center of the second evaporation source with respect to the rotation center axis of the substrate. The film forming apparatus according to item 1. 前記第2蒸発源の前記予備加熱用るつぼは、前記基板の回転中心軸を基準に前記第2蒸発源の回転中心よりも外側に配置されることを特徴とする請求項10〜請求項13のいずれか一項に記載の成膜装置。 Claims 10 to 13, wherein the crucible for preheating of the second evaporation source is arranged outside the rotation center of the second evaporation source with respect to the rotation center axis of the substrate. The film forming apparatus according to any one of the above. 前記各第1蒸発源の前記各蒸着用るつぼおよび前記第2蒸発源の前記蒸着用るつぼは、前記基板の回転中心軸から同一の距離に配置されることを特徴とする請求項10〜請求項14のいずれか1項に記載の成膜装置。 Claims 10 to claim that the vaporization crucible of each first evaporation source and the vaporization crucible of the second evaporation source are arranged at the same distance from the rotation center axis of the substrate. 14. The film forming apparatus according to any one of 14. 前記各第1蒸発源の前記各蒸着用るつぼおよび前記第2蒸発源の前記蒸着用るつぼは、前記基板の回転半径よりも外側に配置されることを特徴とする請求項10〜請求項15のいずれか1項に記載の成膜装置。 10. 10. The film forming apparatus according to any one of the following items. 前記各第1蒸発源の前記各予備加熱用るつぼおよび前記第2蒸発源の前記予備加熱用るつぼは、前記基板の回転半径よりも外側に配置されることを特徴とする請求項10〜請求項16のいずれか1項に記載の成膜装置。 Claims 10 to claim that the preheating crucible of each first evaporation source and the preheating crucible of the second evaporation source are arranged outside the radius of gyration of the substrate. 16. The film forming apparatus according to any one of 16. 前記蒸着位置は、該位置に位置するるつぼが前記基板に向かって蒸着材料を供給する位置であり、
前記予備加熱位置は、該位置に位置するるつぼが前記各蒸発源の回転によって前記蒸着位置に移動される前に予熱される位置であることを特徴とする請求項10〜請求項17のいずれか1項に記載の成膜装置。
The vapor deposition position is a position where the crucible located at the position supplies the vapor deposition material toward the substrate.
One of claims 10 to 17, wherein the preheating position is a position where the crucible located at the position is preheated before being moved to the vapor deposition position by the rotation of each evaporation source. The film forming apparatus according to item 1.
前記成膜装置は複数のコーナー部を有する多角形の成膜装置であり、前記複数の第1蒸発源は、上面から見たとき、前記多角形の成膜装置の各コーナー部に対応して前記各第1蒸発源が配置されることを特徴とする請求項7〜請求項18のいずれか1項に記載の成膜装置。 The film forming apparatus is a polygonal film forming apparatus having a plurality of corner portions, and the plurality of first evaporation sources correspond to each corner portion of the polygonal film forming apparatus when viewed from the upper surface. The film forming apparatus according to any one of claims 7 to 18, wherein each first evaporation source is arranged. 前記成膜装置は四つのコーナー部を有する成膜装置であり、前記複数の第1蒸発源は、上面から見たとき、前記成膜装置の各コーナー部に対応して四つの第1蒸発源が矩形状の四つの角部に対応する位置に配置されることを特徴とする請求項19に記載の成膜装置。 The film forming apparatus is a film forming apparatus having four corner portions, and the plurality of first evaporation sources correspond to each corner portion of the film forming apparatus when viewed from the upper surface. 19. The film forming apparatus according to claim 19, wherein the film forming apparatus is arranged at a position corresponding to four rectangular corner portions. 前記成膜装置は四つのコーナー部を有する多角形の成膜装置であり、前記複数の第1蒸発源は、上面から見たとき、前記多角形の成膜装置の各コーナー部に対応して四つの第1蒸発源が矩形状の四つの角部に対応する位置に配置され、前記各第1蒸発源の前記各蒸着用るつぼが長方形状の四つの角部に対応する位置に配置されることを特徴とする請求項10〜請求項18のいずれか1項に記載の成膜装置。 The film forming apparatus is a polygonal film forming apparatus having four corners, and the plurality of first evaporation sources correspond to each corner portion of the polygonal forming apparatus when viewed from the upper surface. The four first evaporation sources are arranged at positions corresponding to the four rectangular corners, and the vapor deposition vases of each of the first evaporation sources are arranged at positions corresponding to the four rectangular corners. The film forming apparatus according to any one of claims 10 to 18, wherein the film forming apparatus is characterized. 前記第2蒸発源は、上面から見たとき、前記矩形状に配置される四つの第1蒸発源のうち隣接する二つの第1蒸発源の間に配置され、かつ、前記長方形状の長辺に沿って配置されることを特徴とする請求項21に記載の成膜装置。 The second evaporation source is arranged between two adjacent first evaporation sources among the four first evaporation sources arranged in a rectangular shape when viewed from the upper surface, and has a long side of the rectangular shape. The film forming apparatus according to claim 21, wherein the film forming apparatus is arranged along the same line. 前記四つの第1蒸発源は、隣接する各第1蒸発源が互いに反対方向に回転することを特徴とする請求項20〜請求項22のいずれか一項に記載の成膜装置。 The film forming apparatus according to any one of claims 20 to 22, wherein the four first evaporation sources rotate in opposite directions to each other. 更に、前記基板の成膜面と前記複数の蒸発源が配置される前記面との間の領域において、前記第1円よりも外側に設置される蒸発レートセンサーを含む請求項7〜請求項23のいずれか1項に記載の成膜装置。 Further, claims 7 to 23 include an evaporation rate sensor installed outside the first circle in the region between the film-forming surface of the substrate and the surface on which the plurality of evaporation sources are arranged. The film forming apparatus according to any one of the above items. 請求項1〜請求項24のいずれか1項に記載の成膜装置を用いて、有機EL表示素子の電極層を形成する成膜方法。 A film forming method for forming an electrode layer of an organic EL display element by using the film forming apparatus according to any one of claims 1 to 24. 請求項25に記載の成膜方法を用いて、電子デバイスを製造する方法。 A method for manufacturing an electronic device by using the film forming method according to claim 25.
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