JP2019192931A - 半導体装置の実装構造、バックライト装置及び実装基板 - Google Patents
半導体装置の実装構造、バックライト装置及び実装基板 Download PDFInfo
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- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
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- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
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Images
Landscapes
- Led Device Packages (AREA)
Abstract
Description
(実施の形態1)
(外部接続端子3)
(装置側実装絶縁領域34)
(実装基板51)
(ランドパターン52)
さらにランドパターンは、以上の例では実装基板51の平面上に設けているが、この構成に限られるものでない。例えば図8の拡大断面図に示すように、実装基板51’上に凹部を形成して、凹部上にランドパターン52’をパターニングし、このランドパターン52’と接合部材53’とをフィレットFTを介して接合することもできる。
(実施の形態2)
さらにランドバターンも、上述した一方を開口した矩形状であるコ字状に形成した例に限られず、例えば図14Bに示すように、平面視においてL字状に形成されたランドパターン52Lを鏡像状に配置した構成とすることもできる。あるいは、ランドパターンに細いスリットや溝を形成することもできる。例えば図14Cの平面図に示す例では、ランドパターン52Cに形成されたコ字状の開口部分の底辺に垂直な方向(図14Cにおいて水平方向)に延長されたスリットSLCを複数条形成している。あるいは図14Dの平面図に示すように、ランドパターン52Dに形成されたコ字状の開口部分の底辺に平行な方向
(図14Dにおいて垂直方向)に延長されたスリットSLDを複数条形成してもよい。あるいはまた図14Eの平面図に示すように、ランドパターン52Eに形成されたコ字状の開口部分の底辺の両端で斜めにスリットSLEを設けてもよい。各スリットの幅は、スリットで分離されたランドパターンを半田が繋ぐように、スリットを跨いで半田が拡散できる程度とすることが好ましい。さらにスリットの本数は複数本とする他、1本でもよい。
さらにまた、以上の例ではランドパターンとして、半導体発光装置の両端をコ字状に囲む形態を示したが、本発明はランドパターンをこれのみに限定するものでなく、さらに別のランドパターンを付加してもよい。例えば図14Fに示す変形例に係る実装基板では、第一ランドパターン52Fに加えて、さらに第二ランドパターン56を設けている。第二ランドパターン56は、平面視コ字状に形成された一対の第一ランドパターン52Fのランド側絶縁領域54Fで規定される、凹状の開口端同士を結ぶ線分状に沿って配置される。具体的には、一対の第一ランドパターン52Fの開口端同士を結ぶ線分の中間に、第二ランドパターン56が設けられる。
また図14Gの斜視図に示すように、半導体発光装置1F側にも、実装基板上に実装された状態で第二ランドパターン56と対応する位置に補助電極57を設けている。補助電極57を第二ランドパターン56と半田などの接合部材で接合し、半導体発光装置1Fの両端に設けた外部接続端子3Fのみならず、中間部分でも接合部分を設けることで、半導体発光装置1Fの実装基板上への実装に際しての機械的な強度が向上される。補助電極57は、好ましくは半導体発光装置1Fの背面側、すなわち光取り出し面の反対側に設ける。これによって、出力光の出射を補助電極で遮ることなく、固着強度を向上できる。より好ましくは、補助電極57を半導体発光装置1Fの長手方向の中央近傍に設ける。これによって、セルフアライメントの位置決め効果や機械的強度の向上を、最も効率よく発揮できる。
(バックライト装置)
[基体4]
(外部接続端子3)
[発光素子5]
(第1電極及び第2電極)
[封止部材7]
[透光性部材10]
[絶縁部材]
(実施例)
Claims (1)
- 長手方向の両端部においてそれぞれ配置された外部接続端子を備える半導体装置と、前記半導体装置を実装する実装基板とを備える半導体装置の実装構造であって、
前記外部接続端子は、前記実装基板に実装するための実装面において、金属領域を有しており、
前記半導体装置は、前記金属領域で規定された領域に、装置側実装絶縁領域を有しており、
前記実装基板は、その実装面側に、絶縁体上に導体で形成された、前記外部接続端子を接続するためのランドパターンを備えており、
前記ランドパターンは、前記半導体装置の外部接続端子で囲まれた端部を囲む大きさに形成され、かつ前記装置側実装絶縁領域の外周に沿った形状を有するランド側絶縁領域を形成してなることを特徴とする半導体装置の実装構造。
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JP2001223391A (ja) * | 2000-02-08 | 2001-08-17 | Nichia Chem Ind Ltd | 発光ダイオードの形成方法 |
JP2006032511A (ja) * | 2004-07-14 | 2006-02-02 | Citizen Electronics Co Ltd | 基板及び実装基板 |
WO2007020961A1 (ja) * | 2005-08-17 | 2007-02-22 | Matsushita Electric Industrial Co., Ltd. | 表面実装型半導体装置、およびその製造方法 |
JP2007103917A (ja) * | 2005-09-07 | 2007-04-19 | Toyoda Gosei Co Ltd | 固体素子デバイス |
JP2012212794A (ja) * | 2011-03-31 | 2012-11-01 | Stanley Electric Co Ltd | 表面実装用側面受発光型光半導体装置およびそれを用いたモジュール |
US20130134471A1 (en) * | 2011-11-30 | 2013-05-30 | Lite-On Technology Corporation | Led substrate structure, led unit and lighting module having the same |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001223391A (ja) * | 2000-02-08 | 2001-08-17 | Nichia Chem Ind Ltd | 発光ダイオードの形成方法 |
JP2006032511A (ja) * | 2004-07-14 | 2006-02-02 | Citizen Electronics Co Ltd | 基板及び実装基板 |
WO2007020961A1 (ja) * | 2005-08-17 | 2007-02-22 | Matsushita Electric Industrial Co., Ltd. | 表面実装型半導体装置、およびその製造方法 |
JP2007103917A (ja) * | 2005-09-07 | 2007-04-19 | Toyoda Gosei Co Ltd | 固体素子デバイス |
JP2012212794A (ja) * | 2011-03-31 | 2012-11-01 | Stanley Electric Co Ltd | 表面実装用側面受発光型光半導体装置およびそれを用いたモジュール |
US20130134471A1 (en) * | 2011-11-30 | 2013-05-30 | Lite-On Technology Corporation | Led substrate structure, led unit and lighting module having the same |
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