JP2019169825A - 半導体装置及び電力変換装置 - Google Patents

半導体装置及び電力変換装置 Download PDF

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Publication number
JP2019169825A
JP2019169825A JP2018055446A JP2018055446A JP2019169825A JP 2019169825 A JP2019169825 A JP 2019169825A JP 2018055446 A JP2018055446 A JP 2018055446A JP 2018055446 A JP2018055446 A JP 2018055446A JP 2019169825 A JP2019169825 A JP 2019169825A
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JP
Japan
Prior art keywords
transistor
gate
semiconductor device
storage unit
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2018055446A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019169825A5 (https=
Inventor
常雄 小倉
Tsuneo Ogura
常雄 小倉
知子 末代
Tomoko Matsudai
知子 末代
陽子 岩鍜治
Yoko Iwakaji
陽子 岩鍜治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2018055446A priority Critical patent/JP2019169825A/ja
Priority to US16/137,854 priority patent/US20190296730A1/en
Publication of JP2019169825A publication Critical patent/JP2019169825A/ja
Publication of JP2019169825A5 publication Critical patent/JP2019169825A5/ja
Abandoned legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H02M7/53875Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with analogue control of three-phase output
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/02Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/08Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/02Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08128Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163Soft switching
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166Soft switching
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
JP2018055446A 2018-03-23 2018-03-23 半導体装置及び電力変換装置 Abandoned JP2019169825A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018055446A JP2019169825A (ja) 2018-03-23 2018-03-23 半導体装置及び電力変換装置
US16/137,854 US20190296730A1 (en) 2018-03-23 2018-09-21 Semiconductor device and power convertor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018055446A JP2019169825A (ja) 2018-03-23 2018-03-23 半導体装置及び電力変換装置

Publications (2)

Publication Number Publication Date
JP2019169825A true JP2019169825A (ja) 2019-10-03
JP2019169825A5 JP2019169825A5 (https=) 2020-03-05

Family

ID=67985871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018055446A Abandoned JP2019169825A (ja) 2018-03-23 2018-03-23 半導体装置及び電力変換装置

Country Status (2)

Country Link
US (1) US20190296730A1 (https=)
JP (1) JP2019169825A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022044123A1 (https=) * 2020-08-25 2022-03-03
US12063031B2 (en) 2020-12-01 2024-08-13 Kabushiki Kaisha Toshiba Semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109804230B (zh) * 2017-04-13 2021-06-04 富士电机株式会社 温度检测装置以及具备其的功率转换装置
US12126253B2 (en) * 2022-01-19 2024-10-22 Dialog Semiconductor Inc. In-circuit detection of early failure of power switch transistors in switching power converters
JP2025035370A (ja) 2023-09-01 2025-03-13 株式会社東芝 駆動装置および半導体装置
US20260074607A1 (en) * 2024-09-06 2026-03-12 Renesas Design (UK) Limited Advanced Gate Driver for Improved EMI Performance During MOSFET Turn-on

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7035064B2 (en) * 1998-05-29 2006-04-25 Semikron Elektronik Gmbh Method and circuit arrangement with adaptive overload protection for power switching devices
US9030054B2 (en) * 2012-03-27 2015-05-12 Raytheon Company Adaptive gate drive control method and circuit for composite power switch

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022044123A1 (https=) * 2020-08-25 2022-03-03
WO2022044123A1 (ja) * 2020-08-25 2022-03-03 三菱電機株式会社 電力用半導体素子の駆動制御回路、電力用半導体モジュール、および電力変換装置
JP7471426B2 (ja) 2020-08-25 2024-04-19 三菱電機株式会社 電力用半導体素子の駆動制御回路、電力用半導体モジュール、および電力変換装置
US12063031B2 (en) 2020-12-01 2024-08-13 Kabushiki Kaisha Toshiba Semiconductor device

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Publication number Publication date
US20190296730A1 (en) 2019-09-26

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